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1. 发明授权

US08193083B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08193083B2
公开(公告)日：2012-06-05
申请号：US12230782
申请日：2008-09-04
申请人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
发明人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

2. 发明授权

US08026159B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08026159B2
公开(公告)日：2011-09-27
申请号：US12230396
申请日：2008-08-28
申请人： Sadayoshi Horii , Yoshinori Imai
发明人： Sadayoshi Horii , Yoshinori Imai
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3141 , C23C16/409 , C23C16/4401 , C23C16/4412 , C23C16/45531 , C23C16/45534 , C23C16/45561 , C23C16/45565 , H01L21/31691
摘要： A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flown to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flown to the vaporizing part at a second flow rate larger than the first flow rate.
摘要翻译：制造半导体器件的方法包括将衬底装载到处理室中的步骤; 通过将多种反应物质多次加入到处理室来处理基板; 从所述处理室卸载所述处理过的基板，其中，所述多种反应物质中的至少一种含有通过汽化部使液体源蒸发得到的源气体; 在处理基板的步骤中，间歇地进行将液体源供给到蒸发部分并使液体源蒸发的蒸发操作，并且至少在除了进行液体源的蒸发操作之外的时间，能够溶解的溶剂液体源以第一流量流到汽化部分; 并且除了执行液体的蒸发操作之外，并且每当执行液体源的蒸发操作规定次数时，溶剂以大于第一流量的第二流量流动到汽化部分。

3. 发明申请

US20090061648A1 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US20090061648A1
公开(公告)日：2009-03-05
申请号：US12230396
申请日：2008-08-28
申请人： Sadayoshi Horii , Yoshinori Imai
发明人： Sadayoshi Horii , Yoshinori Imai
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3141 , C23C16/409 , C23C16/4401 , C23C16/4412 , C23C16/45531 , C23C16/45534 , C23C16/45561 , C23C16/45565 , H01L21/31691
摘要： A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flown to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flown to the vaporizing part at a second flow rate larger than the first flow rate.
摘要翻译：制造半导体器件的方法包括将衬底装载到处理室中的步骤; 通过将多种反应物质多次加入到处理室来处理基板; 从所述处理室卸载所述处理过的基板，其中，所述多种反应物质中的至少一种含有通过汽化部使液体源蒸发得到的源气体; 在处理基板的步骤中，间歇地进行将液体源供给到蒸发部分并使液体源蒸发的蒸发操作，并且至少在除了执行液体源的蒸发操作之外的时间，能够溶解的溶剂液体源以第一流量流到汽化部分; 并且除了执行液体的蒸发操作之外，并且每当执行液体源的蒸发操作规定次数时，溶剂以大于第一流量的第二流量流动到汽化部分。

4. 发明申请

US20090064931A1 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US20090064931A1
公开(公告)日：2009-03-12
申请号：US12230782
申请日：2008-09-04
申请人： Sadayoshi Horii , Yoshinori Imai , Mika Yamaguchi
发明人： Sadayoshi Horii , Yoshinori Imai , Mika Yamaguchi
IPC分类号： B05C11/10 , H01L21/469
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

5. 发明授权

US08415237B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08415237B2
公开(公告)日：2013-04-09
申请号：US13213567
申请日：2011-08-19
申请人： Sadayoshi Horii , Yoshinori Imai
发明人： Sadayoshi Horii , Yoshinori Imai
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3141 , C23C16/409 , C23C16/4401 , C23C16/4412 , C23C16/45531 , C23C16/45534 , C23C16/45561 , C23C16/45565 , H01L21/31691
摘要： A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flowed to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flowed to the vaporizing part at a second flow rate larger than the first flow rate.
摘要翻译：制造半导体器件的方法包括将衬底装载到处理室中的步骤; 通过将多种反应物质多次加入到处理室来处理基板; 从所述处理室卸载所述处理过的基板，其中，所述多种反应物质中的至少一种含有通过汽化部使液体源蒸发得到的源气体; 在处理基板的步骤中，间歇地进行将液体源供给到蒸发部分并使液体源蒸发的蒸发操作，并且至少在除了执行液体源的蒸发操作之外的时间，能够溶解的溶剂液体源以第一流量流动到汽化部分; 并且除了执行液体的蒸发操作之外，并且每当执行液体源的蒸发操作规定次数时，溶剂以大于第一流量的第二流量流动到汽化部分。

6. 发明授权

US08580671B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08580671B2
公开(公告)日：2013-11-12
申请号：US13461438
申请日：2012-05-01
申请人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
发明人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminum, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminum, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

7. 发明授权

US08728935B2 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法，基板的处理方法及基板处理装置
公开(公告)号：US08728935B2
公开(公告)日：2014-05-20
申请号：US12974884
申请日：2010-12-21
申请人： Kazuhiro Harada , Hideharu Itatani , Sadayoshi Horii
发明人： Kazuhiro Harada , Hideharu Itatani , Sadayoshi Horii
IPC分类号： H01L21/44
CPC分类号： C23C16/34 , C23C16/45525 , H01L21/28088 , H01L21/76834 , H01L29/495 , H01L29/513 , H01L29/517
摘要： A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided. The method of manufacturing a semiconductor device includes: (a) loading a substrate into a processing container; (b) forming a metal film on the substrate using a chemical deposition method by supplying a processing gas into the processing container and exhausting the processing gas; (c) forming an aluminum nitride film on the metal film using the chemical deposition method by supplying an aluminum-containing source gas and a nitrogen-containing gas into the processing container and exhausting the aluminum-containing source gas and the nitrogen-containing gas; and (d) unloading the substrate from the processing container after forming the metal film and the aluminum nitride film, wherein the step (b) and the step (c) are continuously performed while maintaining an inside of the processing container to have an oxygen-free atmosphere.
摘要翻译：提供一种能够最小限度地防止由金属膜氧化引起的特性劣化的半导体器件的制造方法以及基板处理装置。制造半导体器件的方法包括：（a）将衬底装载到处理容器中; （b）使用化学沉积法在所述基板上形成金属膜，通过将处理气体供给到所述处理容器中并排出所述处理气体; （c）使用化学沉积法在所述金属膜上形成氮化铝膜，通过向所述处理容器中供应含铝源气体和含氮气体并排出所述含铝源气体和所述含氮气体; 以及（d）在形成金属膜和氮化铝膜之后，从处理容器中卸载基板，其中在保持处理容器的内部具有氧气流的同时连续执行步骤（b）和步骤（c）自由的气氛。

8. 发明授权

US08404603B2 Method of manufacturing semiconductor device and substrate processing system 有权
标题翻译：制造半导体器件和衬底处理系统的方法
公开(公告)号：US08404603B2
公开(公告)日：2013-03-26
申请号：US12825012
申请日：2010-06-28
申请人： Arito Ogawa , Sadayoshi Horii , Taketoshi Sato , Hideharu Itatani , Nobuyuki Mise , Osamu Tonomura
发明人： Arito Ogawa , Sadayoshi Horii , Taketoshi Sato , Hideharu Itatani , Nobuyuki Mise , Osamu Tonomura
IPC分类号： H01L21/31
CPC分类号： H01L21/31616 , C23C16/303 , C23C16/403 , C23C16/45525 , C23C16/54 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/318 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L28/40
摘要： A method of manufacturing a semiconductor device. In the method, an aluminum-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminum precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminum precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminum-containing insulation film is formed on the aluminum-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.
摘要翻译：一种制造半导体器件的方法。在该方法中，通过交替地重复将铝前体供给到容纳基板的处理室中并从处理室排出铝前体的工序，在基板的电极膜上形成含铝绝缘膜，将氧化或氮化前体供应到处理室中并从处理室排出氧化或氮化前体的过程; 并且在含铝绝缘膜上形成与含铝绝缘膜不同的高介电常数绝缘膜，通过交替重复将前体供给到处理室中并从处理室排出前体的过程，氧化前体进入处理室并从处理室排出氧化前体。另外，对基板进行热处理。

9. 发明申请

US20080286075A1 Method for producing semiconductor device, and substrate processing apparatus 审中-公开
标题翻译：半导体装置的制造方法以及基板处理装置
公开(公告)号：US20080286075A1
公开(公告)日：2008-11-20
申请号：US12149988
申请日：2008-05-12
申请人： Sadayoshi Horii
发明人： Sadayoshi Horii
IPC分类号： B66C17/08 , H01L21/00
CPC分类号： C23C16/4405 , B08B7/00 , H01L21/02159 , H01L21/02181 , H01L21/02189 , H01L21/0228 , H01L21/31641 , H01L21/31645
摘要： Disclosed are a method for producing a semiconductor device and a substrate processing apparatus. The method comprises a step of carrying a substrate into a processing chamber, a step of feeding a material gas into the processing chamber to thereby form a high dielectric constant film on the substrate, a step of carrying the substrate after film formation thereon out of the processing chamber, and a step of feeding an O3 gas and a Cl-containing gas into the processing chamber under the condition that, when the number of the Cl atoms in the Cl-containing gas is indicated by n, the flow rate of the O3 gas is at least 2n times the flow rate of the Cl-containing gas, thereby removing the film adhering inside the processing chamber to clean the inside of the processing chamber.
摘要翻译：公开了半导体器件和衬底处理设备的制造方法。该方法包括将衬底运送到处理室中的步骤，将材料气体供给到处理室中以在衬底上形成高介电常数膜的步骤，在其上形成膜之后将衬底承载在其中的步骤处理室，以及在含Cl气体中的Cl原子数目表示为含有气体的Cl原子数的条件下，向处理室供给O 3 3气体和含Cl气体的步骤如图n所示，O 3气体的流量为含Cl气体的流量的至少2n倍，从而除去附着在处理室内的膜，以清洁处理室的内部。

10. 发明授权

US08685866B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08685866B2
公开(公告)日：2014-04-01
申请号：US12822317
申请日：2010-06-24
申请人： Sadayoshi Horii , Atsushi Sano , Masahito Kitamura , Yoshitake Kato
发明人： Sadayoshi Horii , Atsushi Sano , Masahito Kitamura , Yoshitake Kato
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/40 , C23C16/403 , C23C16/405 , C23C16/4412 , C23C16/45531 , C23C16/45561 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/0228
摘要： A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.
摘要翻译：一种制造半导体器件的方法，包括交替地重复形成包括第一金属元素的第一金属氧化物膜的工艺和在容纳在处理室中的基板上形成包括第二金属元素的第二金属氧化物膜的工艺，以便在衬底上形成具有预定组成比的第一和第二金属元素的第三金属氧化物膜。第三金属氧化物膜的第一和第二金属元素中的一个具有比另一个的浓度高的浓度，并且包括高浓度金属元素的第一和第二金属氧化物膜中的一个在化学气相沉积中形成 CVD）模式或原子层沉积（ALD）饱和模式，并且第一和第二金属氧化物膜中的另一个以ALD不饱和模式形成。

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