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1. 发明申请

US20120322254A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20120322254A1
公开(公告)日：2012-12-20
申请号：US13461438
申请日：2012-05-01
申请人： Sadayoshi HORII , Yoshinori IMAI , Mika YAMAGUCHI
发明人： Sadayoshi HORII , Yoshinori IMAI , Mika YAMAGUCHI
IPC分类号： H01L21/283
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

2. 发明申请

US20100330781A1 SUBSTRATE PROCESSING APPARATUS , METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SUBSTRATE 有权
标题翻译：基板加工装置，制造半导体装置的方法和制造基板的方法
公开(公告)号：US20100330781A1
公开(公告)日：2010-12-30
申请号：US12825005
申请日：2010-06-28
申请人： Takafumi SASAKI , Sadao NAKASHIMA , Yoshinori IMAI , Koei KURIBAYASHI
发明人： Takafumi SASAKI , Sadao NAKASHIMA , Yoshinori IMAI , Koei KURIBAYASHI
IPC分类号： H01L21/20 , C23C16/54
CPC分类号： H01L21/0262 , C23C16/325 , C23C16/4412 , C23C16/45514 , C23C16/45578 , C23C16/54 , C30B25/165 , C30B29/36 , H01L21/02529
摘要： There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.
摘要翻译：提供了一种用于在高温条件下生长SiC外延膜的衬底处理装置，半导体器件的制造方法和制造衬底的方法。基板处理装置包括：反应室; 第一气体供给系统，其配置为至少供给含有硅原子的气体和含有氯原子的气体，或者含有硅和氯原子的气体; 配置成供给至少一种还原气体的第二气体供给系统; 第三气体供给系统，被配置为至少提供含有碳原子的气体; 连接到第一气体供应系统或第一和第三气体供应系统的第一气体供应喷嘴; 连接到第二气体供应系统或第二和第三气体供应系统的第二气体供应喷嘴; 以及控制器，被配置为控制第一至第三气体供应系统。

3. 发明申请

US20100297832A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件制造方法，基板处理装置，基板制造方法
公开(公告)号：US20100297832A1
公开(公告)日：2010-11-25
申请号：US12782090
申请日：2010-05-18
申请人： Yoshinori IMAI , Hideji SHIBATA , Takafumi SASAKI
发明人： Yoshinori IMAI , Hideji SHIBATA , Takafumi SASAKI
IPC分类号： H01L21/205 , C23C16/32 , C23C16/455
CPC分类号： H01L21/205 , C23C16/325 , C23C16/4401 , C23C16/45574 , C30B25/14 , C30B25/165 , C30B29/36 , H01L21/02529 , H01L21/0262
摘要： Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.
摘要翻译：提供了一种基板处理装置，半导体装置制造方法和基板制造方法。基板处理装置包括：被配置为处理基板的反应室; 配置为至少提供含硅气体和含氯气体或至少含有硅和氯的气体的第一气体供给系统; 连接到第一气体供应系统的第一气体供应单元; 构造成供给至少一种还原气体的第二气体供给系统; 连接到第二气体供应系统的第二气体供应单元; 第三气体供给系统，被配置为至少提供含碳气体，并连接到所述第一气体供给单元和所述第二气体供给单元中的至少一个; 以及控制单元，被配置为控制所述第一至第三气体供应系统。

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