专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08529695B2 Method for manufacturing a silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US08529695B2
公开(公告)日：2013-09-10
申请号：US13097116
申请日：2011-04-29
申请人： Kazuhiro Harada , Hisashi Furuya
发明人： Kazuhiro Harada , Hisashi Furuya
IPC分类号： C30B13/02
CPC分类号： C30B35/007 , C30B15/203 , C30B29/06
摘要： Silicon wafer manufacturing method including cleaning polycrystalline silicon with dissolved ozone aqueous solution, cleaning the polycrystalline silicon with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the polycrystalline silicon with ultra pure water, melting the rinsed polycrystalline silicon and pulling a single crystal silicon ingot from the molten silicon liquid at a solidification ratio of 0.9 or less, making the pulled single crystal silicon ingot into block-shaped or grain-shaped single crystal silicon, cleaning with dissolved ozone aqueous solution, cleaning with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the single crystal silicon with ultra pure water, remelting and pulling a single crystal silicon ingot at a solidification of 0.9 or less, and forming a silicon wafer out of the single crystal silicon ingot.
摘要翻译：硅晶片制造方法包括用溶解的臭氧水溶液清洗多晶硅，用氟酸或氟酸和硝酸的混合酸清洗多晶硅，用超纯水冲洗多晶硅，熔化漂洗的多晶硅并拉出单晶硅熔液以固溶比为0.9以下，使拉晶单晶硅锭成块状或晶粒状单晶硅，用溶解臭氧水溶液清洗，用氟酸清洗或混合酸氟酸和硝酸，用超纯水冲洗单晶硅，在0.9以下的固化下重熔和拉拔单晶硅锭，并从单晶硅锭中形成硅晶片。

2. 发明申请

US20120045903A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件的方法，加工基板的方法和基板处理装置
公开(公告)号：US20120045903A1
公开(公告)日：2012-02-23
申请号：US13213434
申请日：2011-08-19
申请人： Kazuhiro HARADA , Hideharu ITATANI
发明人： Kazuhiro HARADA , Hideharu ITATANI
IPC分类号： H01L21/31 , C23C16/52 , C23C16/46 , C23C16/34 , C23C16/455
CPC分类号： H01L21/6719 , C23C16/34 , C23C16/56 , H01L21/67748 , H01L45/04 , H01L45/145 , H01L45/1616
摘要： Provided is a method of forming a tantalum oxide-based film having good step coverage while controlling an oxygen concentration in the film. The method includes forming a tantalum nitride layer on a substrate by supplying a source gas including a tantalum and a nitriding agent into a process chamber wherein the substrate is accommodated under a condition where a chemical vapor deposition (CVD) reaction is caused; oxidizing the tantalum nitride layer by supplying an oxidizing agent into the process chamber under a condition where an oxidation reaction of the tantalum nitride layer by the oxidizing agent is unsaturated; and forming on the substrate a conductive tantalum oxynitride film wherein an oxygen is stoichiometrically insufficient with respect to the tantalum and a nitrogen by alternately repeating forming the tantalum nitride layer on the substrate and oxidizing the tantalum nitride layer a plurality of times.
摘要翻译：提供了一种在控制膜中的氧浓度的同时形成具有良好阶梯覆盖的氧化钽基膜的方法。该方法包括通过将包含钽和氮化剂的源气体供给到在引起化学气相沉积（CVD）反应的条件下容纳衬底的处理室中，在衬底上形成氮化钽层; 在氧化剂的氮化钽层的氧化反应不饱和的条件下，通过向处理室供给氧化剂来氧化氮化钽层; 在衬底上形成导电氮氧化钽膜，其中通过在衬底上交替地重复形成氮化钽层并多次氧化氮化钽层，其中相对于钽和氮具有化学计量不足的氧和氮。

3. 发明申请

US20110263126A1 METHOD FOR MANUFACTURING A SILICON WAFER 审中-公开
标题翻译：制造硅波的方法
公开(公告)号：US20110263126A1
公开(公告)日：2011-10-27
申请号：US13097117
申请日：2011-04-29
申请人： Kazuhiro HARADA , Hisashi Furuya , Yukio MUROI
发明人： Kazuhiro HARADA , Hisashi Furuya , Yukio MUROI
IPC分类号： H01L21/306
CPC分类号： C30B35/007 , C30B15/203 , C30B29/06
摘要： Method for manufacturing a silicon wafer free of point defect agglomerates by processes including adding pure carbon to raw material of polycrystalline silicon, melting to become a molten silicon liquid, pulling a single silicon crystal ingot comprising a perfect domain [P] from the molten silicon liquid by controlling a ratio of V/G (mm2/minute ° C.), lapping a silicon wafer cut out from the ingot, beveling the silicon wafer, chemical etching the beveled wafer so as to be removed damages of a surface of the wafer, and mirror-polishing the etched wafer, and the pure carbon is added to the raw material of polycrystalline silicon so that a density of carbon in the ingot becomes 1×1015 to 5×1015 atoms/cm3.
摘要翻译：通过包括向纯多晶硅原料中加入纯碳的方法制造无点缺陷聚集体的硅晶片，熔化成熔融硅液体，从熔融硅液体中拉出包含完整结构域[P]的单个硅晶锭通过控制V / G（mm2 /分钟°C）的比例，研磨从晶片切出的硅晶片，斜切硅晶片，化学蚀刻斜面晶片，以便去除晶片表面的损坏，并对蚀刻的晶片进行镜面抛光，将纯碳添加到多晶硅的原料中，使得锭中的碳的密度为1×1015〜5×1015原子/ cm3。

4. 发明申请

US20100162947A1 SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：用于拉丝硅单晶的二氧化硅玻璃结构及其制造方法
公开(公告)号：US20100162947A1
公开(公告)日：2010-07-01
申请号：US12647634
申请日：2009-12-28
申请人： Kazuhiro HARADA , Satoshi KUDO
发明人： Kazuhiro HARADA , Satoshi KUDO
IPC分类号： C30B11/00
CPC分类号： C30B15/10
摘要： A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced.
摘要翻译：用于提取硅单晶并由原料由天然二氧化硅制成的二氧化硅玻璃坩埚设置有从坩埚底部的中心到内表面至多0.5mm深的一定范围内的区域，其基本上不包括气泡，其中包括在从坩埚的底部的中心到距内表面的0.5mm深的一定范围内的区域中的浓度的平均值为30ppm以上和150ppm以下。在以这种方式形成坩埚底部的内层的情况下，防止了内表面的凹陷，并且气泡的产生减少。

5. 发明授权

US07709276B2 Manufacturing method of a semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US07709276B2
公开(公告)日：2010-05-04
申请号：US12155221
申请日：2008-05-30
申请人： Hideharu Itatani , Kazuhiro Harada
发明人： Hideharu Itatani , Kazuhiro Harada
IPC分类号： H01L21/00
CPC分类号： C23C16/4405 , H01L27/10817 , H01L27/10852 , H01L28/65
摘要： A by-product (e.g., RuF5) that is produced in the process of cleaning may cover a cleaning subject film and may obstruct the progress of the cleaning. To suppress an accumulation of the by-product, a cleaning operation is divided into plural operations, performing vacuum evacuation between the divided operations to evaporate the by-product and expose a new surface of the cleaning subject film between each supply of cleaning gas.
摘要翻译：在清洁过程中产生的副产物（例如RuF5）可以覆盖清洁对象膜并且可能妨碍清洁的进行。为了抑制副产物的累积，将清洁操作分为多个操作，在分开的操作之间进行真空抽真空，蒸发副产物，并在清洁气体供给之间露出清洁对象膜的新表面。

6. 发明申请

US20090115364A1 ELECTRIC MOTOR DRIVING DEVICE, AND AIR CONDITIONER USING THE SAME 有权
标题翻译：电动马达驱动装置和使用该装置的空调器
公开(公告)号：US20090115364A1
公开(公告)日：2009-05-07
申请号：US11574016
申请日：2005-08-24
申请人： Kazuhiro HARADA
发明人： Kazuhiro HARADA
IPC分类号： H02H7/085
CPC分类号： H02P29/027 , H02M1/32 , H02P29/032
摘要： Disclosed is a motor-driving device capable of protecting an inverter from breakdown. First current-protecting section retains reference voltage value Vref1 as a preset value. If the current to be fed into inverter exceeds value Vref1, first current-protecting section shuts off the output of driver and outputs a first warning to driving-signal generator to shut off generating driving signals. This protects inverter from breakdown. Second current-protection section retains reference voltage value Vref2 that is smaller than value Vref1. If the detected current exceeds value Vref2, second current-protecting section outputs a second warning. Receiving the second warning, driving-signal generator immediately stops generating driving signals; however, it resumes output of driving signals after no longer receiving second warning. The structure above protects inverter from breakdown without frequent stops of brushless motor.
摘要翻译：公开了一种能够保护逆变器不发生故障的电动机驱动装置。第一电流保护部分将参考电压值Vref1保持为预设值。如果要馈送到逆变器的电流超过值Vref1，则第一电流保护部分切断驱动器的输出，并向驱动信号发生器输出第一警告以切断产生的驱动信号。这样可以防止变频器故障。第二电流保护部分保持小于值Vref1的参考电压值Vref2。如果检测到的电流超过值Vref2，则第二电流保护部输出第二警告。接收到第二个警告，驱动信号发生器立即停止产生驾驶信号; 然而，在不再接收到第二个警告之后，它恢复驱动信号的输出。上述结构可防止变频器故障，无需无刷电机频繁停机。

7. 发明申请

US20070119365A1 Silicon single crystal pulling method 有权
公开(公告)号：US20070119365A1
公开(公告)日：2007-05-31
申请号：US10561820
申请日：2005-01-25
申请人： Kazuhiro Harada , Norihito Fukatsu , Senlin Fu , Yoji Suzuki
发明人： Kazuhiro Harada , Norihito Fukatsu , Senlin Fu , Yoji Suzuki
IPC分类号： C30B15/00 , C30B21/06 , C30B19/00 , C30B28/10
CPC分类号： C30B15/14 , C30B15/305 , C30B29/06 , C30B35/00 , Y10S117/917 , Y10T117/1068 , Y10T117/1072
摘要： [Problem] A silicon single crystal ingot in which point defect agglomerates do not exist over a substantially entire length thereof is manufactured without reducing a pure margin. [Solving Means] A heat shielding member 36 comprises a bulge portion 41 which is provided to bulge in an in-cylinder direction at a lower portion of a cylindrical portion 37 and has a heat storage member 47 provided therein. A flow quantity of an inert gas flowing down between the bulge portion 41 in the heat shielding member 36 and an ingot 25 when pulling up a top-side ingot 25a of the silicon single crystal ingot 25 is set larger than a flow quantity of the inert gas flowing down between the bulge portion 41 and the ingot 25 when pulling up a bottom-side ingot 25b of the silicon single crystal ingot 25, thereby pulling up the ingot 25. Alternatively, an intensity of a cusp magnetic field 53 when pulling up the top-side ingot 25a is set higher than an intensity of the cusp magnetic field 53 when pulling up the bottom-side ingot 25b.

8. 发明授权

US07074271B2 Method of identifying defect distribution in silicon single crystal ingot 有权
标题翻译：识别硅单晶锭缺陷分布的方法
公开(公告)号：US07074271B2
公开(公告)日：2006-07-11
申请号：US10784411
申请日：2004-02-23
申请人： Jun Furukawa , Kazunari Kurita , Kazuhiro Harada
发明人： Jun Furukawa , Kazunari Kurita , Kazuhiro Harada
IPC分类号： C30B15/20
CPC分类号： C30B33/00 , C30B25/18 , C30B29/06 , Y10T117/1008
摘要： A surface of a reference sample is contaminated with a transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. A concentration of recombination centers formed by the transition metal is measured in the entire heat-treated reference sample, and a region [V], a region [Pv], a region [Pi], and a region [I] in the reference sample are defined based on the values measured. Meanwhile, recombination lifetimes associated with the transition metal are measured in the entire heat-treated reference sample. Based on both of the measurement results, a correlation line of the concentration of recombination centers and the recombination lifetimes is produced. A surface of the measurement sample is contaminated with the transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. Recombination lifetimes associated with the transition metal are measured in the entire heat-treated measurement sample, and the values measured are checked against the correlation line to infer the region [Pv] and the region [Pi] as well as the boundary thereof in the measurement sample.
摘要翻译：参考样品的表面被过渡金属污染，进行热处理以扩散样品中的过渡金属。在整个热处理参考样品中测量由过渡金属形成的复合中心的浓度，参考样品中的区域[V]，区域[Pv]，区域[]和区域[I] 基于测量值定义。同时，在整个热处理参考样品中测量与过渡金属相关的复合寿命。基于这两个测量结果，产生了重组中心浓度和复合寿命的相关系。测量样品的表面被过渡金属污染，进行热处理以扩散样品中的过渡金属。在整个热处理的测量样品中测量与过渡金属相关联的重组寿命，并且根据相关线检查测量的值以推断测量中的区域[Pv]和区域[Pi]及其边界样品。

9. 发明授权

US06671192B2 Power apparatus 失效
标题翻译：电力设备
公开(公告)号：US06671192B2
公开(公告)日：2003-12-30
申请号：US10239784
申请日：2003-03-31
申请人： Shiro Maeda , Kazuhiro Harada , Yasuhisa Ninomiya , Akihiro Kyogoku , Tomohiro Sugimoto
发明人： Shiro Maeda , Kazuhiro Harada , Yasuhisa Ninomiya , Akihiro Kyogoku , Tomohiro Sugimoto
IPC分类号： H02M112
CPC分类号： H02M1/4208 , H02M1/12 , Y02B70/126
摘要： The present invention discloses a power apparatus with the output voltage thereof made variable, which allows harmonics to be suppressed while an enhanced power factor being maintained. The power apparatus comprises an alternating current power source, a bridge rectifier circuit to subject alternating currents from the alternating current power source to full-wave rectification, a reactor connected between the alternating current power source and the alternating current input end of the bridge rectifier circuit and a capacitor connected via a bi-directional switch between the alternating current input end and the direct current end of the bridge rectifier circuit, further comprising a smoothing capacitor, a zero-crossing detecting means, a bi-directional switch drive signal generating means and a bi-directional switch driving means.
摘要翻译：本发明公开了一种其输出电压为可变的电力设备，其能够在保持增强的功率因数的同时抑制谐波。电力设备包括交流电源，桥接整流电路，用于将来自交流电源的交流电流全波整流，连接在交流电源与桥式整流电路的交流输入端之间的电抗器以及通过桥式整流电路的交流输入端和直流端之间的双向开关连接的电容器，还包括平滑电容器，过零检测装置，双向开关驱动信号发生装置和双向开关驱动装置。

10. 发明授权

US09218993B2 Method of manufacturing semiconductor device and method of processing substrate 有权
标题翻译：制造半导体器件的方法及其处理方法
公开(公告)号：US09218993B2
公开(公告)日：2015-12-22
申请号：US13213434
申请日：2011-08-19
申请人： Kazuhiro Harada , Hideharu Itatani
发明人： Kazuhiro Harada , Hideharu Itatani
IPC分类号： H01L21/31 , C23C16/52 , C23C16/46 , C23C16/34 , C23C16/455 , H01L21/67 , C23C16/56 , H01L21/677 , H01L45/00
CPC分类号： H01L21/6719 , C23C16/34 , C23C16/56 , H01L21/67748 , H01L45/04 , H01L45/145 , H01L45/1616
摘要： Provided is a method of forming a tantalum oxide-based film having good step coverage while controlling an oxygen concentration in the film. The method includes forming a tantalum nitride layer on a substrate by supplying a source gas including a tantalum and a nitriding agent into a process chamber wherein the substrate is accommodated under a condition where a chemical vapor deposition (CVD) reaction is caused; oxidizing the tantalum nitride layer by supplying an oxidizing agent into the process chamber under a condition where an oxidation reaction of the tantalum nitride layer by the oxidizing agent is unsaturated; and forming on the substrate a conductive tantalum oxynitride film wherein an oxygen is stoichiometrically insufficient with respect to the tantalum and a nitrogen by alternately repeating forming the tantalum nitride layer on the substrate and oxidizing the tantalum nitride layer a plurality of times.
摘要翻译：提供了一种在控制膜中的氧浓度的同时形成具有良好阶梯覆盖的氧化钽基膜的方法。该方法包括通过将包含钽和氮化剂的源气体供给到在引起化学气相沉积（CVD）反应的条件下容纳衬底的处理室中，在衬底上形成氮化钽层; 在氧化剂的氮化钽层的氧化反应不饱和的条件下，通过向处理室供给氧化剂来氧化氮化钽层; 在衬底上形成导电氮氧化钽膜，其中通过在衬底上交替地重复形成氮化钽层并多次氧化氮化钽层，其中相对于钽和氮具有化学计量不足的氧和氮。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式