专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2012044590A Speaker stand 有权
标题翻译： SPEAKER STAND
公开(公告)号：JP2012044590A
公开(公告)日：2012-03-01
申请号：JP2010186159
申请日：2010-08-23
申请人： Yoshinori Imai , 芳範今井
发明人： IMAI YOSHINORI
IPC分类号： H04R1/00
摘要： PROBLEM TO BE SOLVED: To provide a speaker stand for improving sound quality of reproduced sound output from a speaker.SOLUTION: A speaker stand SS includes: a top plate 10 on which the speaker SP is placed; a base plate 20 disposed by facing the top plate 10; a plurality of columns 30 coupling the top plate 10 with the base plate 20 by keeping an interval: legs 50 installed in the base plate 20; and vibration transmitting means 40 arranged between a speaker stand installation face 90 and the base plate 20. The vibration transmitting means 40 is made higher than the legs 50 and is disposed to extend an interval between the speaker stand installation face 90 and the base plate 20.
摘要翻译：要解决的问题：提供一种用于提高从扬声器输出的再现声音的声音质量的扬声器架。扬声器支架SS包括：扬声器SP放置在其上的顶板10; 通过面对顶板10设置的基板20; 通过保持间隔：将底板10安装在基板20中的多个柱30与顶板20连接; 以及布置在扬声器支架安装面90和基板20之间的振动传递装置40.振动传递装置40被制成为比腿部50高，并且设置成在扬声器架安装面90和基板20之间延伸（C）2012年，JPO＆INPIT

2. 发明授权

US08889533B2 Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus 有权
标题翻译：制造半导体器件的方法，制造衬底和衬底处理设备的方法
公开(公告)号：US08889533B2
公开(公告)日：2014-11-18
申请号：US13580933
申请日：2011-02-22
申请人： Takafumi Sasaki , Yoshinori Imai , Koei Kuribayashi , Sadao Nakashima
发明人： Takafumi Sasaki , Yoshinori Imai , Koei Kuribayashi , Sadao Nakashima
IPC分类号： H01L21/20 , H01L21/36 , C23C16/455 , C23C16/32 , H01L21/02
CPC分类号： C23C16/45578 , C23C16/325 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/0262 , Y10S438/931
摘要： A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.
摘要翻译：通过使用基板处理装置制造半导体器件的方法包括：反应室，被配置为处理以预定间隔堆叠的多个基板，其中来自第一气体供应入口的第一气体流和来自第二气体供应源的第二气体流入口在这些气体流到达基板之前彼此交叉。制造半导体器件的方法包括：将多个衬底装载到反应室中; 将来自所述第一气体供给口的含硅气体和含氯气体供给到所述反应室中，将来自所述第二气体供给口的含碳气体和还原气体供给到所述反应室内，并供给含掺杂剂的气体从第一供气口或第二供气口进入反应室; 并从反应室中卸载基板。

3. 发明申请

US20090064931A1 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US20090064931A1
公开(公告)日：2009-03-12
申请号：US12230782
申请日：2008-09-04
申请人： Sadayoshi Horii , Yoshinori Imai , Mika Yamaguchi
发明人： Sadayoshi Horii , Yoshinori Imai , Mika Yamaguchi
IPC分类号： B05C11/10 , H01L21/469
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

4. 发明授权

US06821871B2 Method for manufacturing semiconductor device, substrate treatment method, and semiconductor manufacturing apparatus 有权
标题翻译：半导体装置的制造方法，基板处理方法以及半导体制造装置
公开(公告)号：US06821871B2
公开(公告)日：2004-11-23
申请号：US09879122
申请日：2001-06-13
申请人： Hisashi Nomura , Yushin Takasawa , Hajime Karasawa , Yoshinori Imai , Tadanori Yoshida , Kenichi Yamaguchi
发明人： Hisashi Nomura , Yushin Takasawa , Hajime Karasawa , Yoshinori Imai , Tadanori Yoshida , Kenichi Yamaguchi
IPC分类号： H01L2122
CPC分类号： H01L21/223 , C23C8/02
摘要： It is an object of the present invention to make it easy to diffuse phosphorus into a silicon film and allow the phosphorus diffusion concentration to be easily controlled by varying the timing at which the dopant gas is allowed to flow. A silicon wafer 10 on whose surface an amorphous silicon film 12 has been formed is placed in a diffusion furnace. After this, phosphine (PH3) or a mixed gas containing phosphine is allowed to begin flowing over the wafer 15 and the phosphorus is diffused into the silicon film 12 before the amorphous silicon film 12 crystallizes and changes into a polysilicon film.
摘要翻译：本发明的目的是使磷易于将磷扩散到硅膜中，并且通过改变允许掺杂气体流动的时间来容易地控制磷扩散浓度。在其表面形成有非晶硅膜12的硅晶片10放置在扩散炉中。此后，允许磷化氢（PH3）或含有磷化氢的混合气体开始流过晶片15，并且在非晶硅膜12结晶之前，磷扩散到硅膜12中并变成多晶硅膜。

5. 发明申请

US20120315767A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件的方法，制造衬底和衬底加工装置的方法
公开(公告)号：US20120315767A1
公开(公告)日：2012-12-13
申请号：US13580933
申请日：2011-02-22
申请人： Takafumi Sasaki , Yoshinori Imai , Koei Kuribayashi , Sadao Nakashima
发明人： Takafumi Sasaki , Yoshinori Imai , Koei Kuribayashi , Sadao Nakashima
IPC分类号： H01L21/31 , C23C16/32
CPC分类号： C23C16/45578 , C23C16/325 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/0262 , Y10S438/931
摘要： A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.
摘要翻译：通过使用基板处理装置制造半导体器件的方法包括：反应室，被配置为处理以预定间隔堆叠的多个基板，其中来自第一气体供应入口的第一气体流和来自第二气体供应源的第二气体流入口在这些气体流到达基板之前彼此交叉。制造半导体器件的方法包括：将多个衬底装载到反应室中; 将来自所述第一气体供给口的含硅气体和含氯气体供给到所述反应室中，将来自所述第二气体供给口的含碳气体和还原气体供给到所述反应室内，并供给含掺杂剂的气体从第一供气口或第二供气口进入反应室; 并从反应室中卸载基板。

6. 发明申请

US20120156886A1 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基板加工装置，制造基板的方法和制造半导体装置的方法
公开(公告)号：US20120156886A1
公开(公告)日：2012-06-21
申请号：US13331123
申请日：2011-12-20
申请人： Kenji Shirako , Masanao Fukuda , Takafumi Sasaki , Yoshinori Imai , Daisuke Hara , Shuhei Saido , Koei Kuribayashi
发明人： Kenji Shirako , Masanao Fukuda , Takafumi Sasaki , Yoshinori Imai , Daisuke Hara , Shuhei Saido , Koei Kuribayashi
IPC分类号： H01L21/306 , C01B31/36 , C23F1/08
CPC分类号： C23C16/325 , C23C16/45574 , C23C16/45578 , C23C16/481 , C23C16/52 , C30B25/14 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/0262
摘要： Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates 14, a heating part installed to surround the reaction chamber and configured to heat the reaction chamber, and a first gas supply pipe 60 extending in the reaction chamber, wherein the first gas supply pipe 60 includes a first gas supply port 68 configured to inject a first gas toward the plurality of substrates 14, and first shielding walls installed at both sides of the first gas supply port to expose the first gas supply port 68, the first shielding walls extending toward the plurality of substrates 14 from the first gas supply port 68.
摘要翻译：改善了基板（特别是其上形成有SiC外延膜的基板）的生产效率，并抑制了气体供给口内的膜的形成。这是通过一种基板处理装置实现的，该基板处理装置包括：反应室，其构造成容纳多个基板14，加热部分安装成围绕反应室并构造成加热反应室;以及第一气体供给管60，其在反应室其特征在于，所述第一气体供给管60包括：第一气体供给口68，其配置成朝向所述多个基板14喷射第一气体;以及第一遮蔽壁，设置在所述第一气体供给口的两侧，露出所述第一气体供给口68 第一屏蔽壁从第一气体供给口68向多个基板14延伸。

7. 发明授权

US08193083B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08193083B2
公开(公告)日：2012-06-05
申请号：US12230782
申请日：2008-09-04
申请人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
发明人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

8. 发明申请

US20110300695A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20110300695A1
公开(公告)日：2011-12-08
申请号：US13213567
申请日：2011-08-19
申请人： Sadayoshi HORII , Yoshinori Imai
发明人： Sadayoshi HORII , Yoshinori Imai
IPC分类号： H01L21/205 , C23C16/00
CPC分类号： H01L21/3141 , C23C16/409 , C23C16/4401 , C23C16/4412 , C23C16/45531 , C23C16/45534 , C23C16/45561 , C23C16/45565 , H01L21/31691
摘要： A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flowed to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flowed to the vaporizing part at a second flow rate larger than the first flow rate.
摘要翻译：制造半导体器件的方法包括将衬底装载到处理室中的步骤; 通过将多种反应物质多次加入到处理室来处理基板; 从所述处理室卸载所述处理过的基板，其中，所述多种反应物质中的至少一种含有通过汽化部使液体源蒸发得到的源气体; 在处理基板的步骤中，间歇地进行将液体源供给到蒸发部分并使液体源蒸发的蒸发操作，并且至少在除了进行液体源的蒸发操作之外的时间，能够溶解的溶剂液体源以第一流量流动到汽化部分; 并且除了执行液体的蒸发操作之外，并且每当执行液体源的蒸发操作规定次数时，溶剂以大于第一流量的第二流量流动到汽化部分。

9. 发明授权

US08450220B2 Substrate processing apparatus , method of manufacturing semiconductor device, and method of manufacturing substrate 有权
标题翻译：基板处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US08450220B2
公开(公告)日：2013-05-28
申请号：US12825005
申请日：2010-06-28
申请人： Takafumi Sasaki , Sadao Nakashima , Yoshinori Imai , Koei Kuribayashi
发明人： Takafumi Sasaki , Sadao Nakashima , Yoshinori Imai , Koei Kuribayashi
IPC分类号： H01L21/469
CPC分类号： H01L21/0262 , C23C16/325 , C23C16/4412 , C23C16/45514 , C23C16/45578 , C23C16/54 , C30B25/165 , C30B29/36 , H01L21/02529
摘要： There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.
摘要翻译：提供了一种用于在高温条件下生长SiC外延膜的衬底处理装置，半导体器件的制造方法和制造衬底的方法。基板处理装置包括：反应室; 第一气体供给系统，其配置为至少供给含有硅原子的气体和含有氯原子的气体，或者含有硅和氯原子的气体; 构造成供给至少一种还原气体的第二气体供给系统; 第三气体供给系统，被配置为至少提供含有碳原子的气体; 连接到第一气体供应系统或第一和第三气体供应系统的第一气体供应喷嘴; 连接到第二气体供应系统或第二和第三气体供应系统的第二气体供应喷嘴; 以及控制器，被配置为控制第一至第三气体供应系统。

10. 发明授权

US08415237B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08415237B2
公开(公告)日：2013-04-09
申请号：US13213567
申请日：2011-08-19
申请人： Sadayoshi Horii , Yoshinori Imai
发明人： Sadayoshi Horii , Yoshinori Imai
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3141 , C23C16/409 , C23C16/4401 , C23C16/4412 , C23C16/45531 , C23C16/45534 , C23C16/45561 , C23C16/45565 , H01L21/31691
摘要： A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flowed to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flowed to the vaporizing part at a second flow rate larger than the first flow rate.
摘要翻译：制造半导体器件的方法包括将衬底装载到处理室中的步骤; 通过将多种反应物质多次加入到处理室来处理基板; 从所述处理室卸载所述处理过的基板，其中，所述多种反应物质中的至少一种含有通过汽化部使液体源蒸发得到的源气体; 在处理基板的步骤中，间歇地进行将液体源供给到蒸发部分并使液体源蒸发的蒸发操作，并且至少在除了执行液体源的蒸发操作之外的时间，能够溶解的溶剂液体源以第一流量流动到汽化部分; 并且除了执行液体的蒸发操作之外，并且每当执行液体源的蒸发操作规定次数时，溶剂以大于第一流量的第二流量流动到汽化部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式