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1. 发明授权

US06689249B2 Shield or ring surrounding semiconductor workpiece in plasma chamber 有权
标题翻译：在等离子体室内围绕半导体工件的屏蔽或环
公开(公告)号：US06689249B2
公开(公告)日：2004-02-10
申请号：US09947194
申请日：2001-09-04
申请人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
发明人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
IPC分类号： C23F108
CPC分类号： H01L21/67126 , H01J37/32623 , H01J37/32633 , H01J37/3266 , H01L21/6831 , H01L21/6833 , H01L21/68721 , H01L21/68735 , H02N13/00 , Y10S156/915
摘要： A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.
摘要翻译：围绕等离子体室中的半导体工件的环或环。根据一个方面，所述环具有提升的套环部分，其内表面以与工件的平面成钝角定向，该角度优选为135°。这种角度取向导致离子轰击提升的套环的内表面沿更平行于工件的平面的方向散射，从而减少工件周边处的任何介电屏蔽的侵蚀，并且改善等离子体中的空间不均匀性由于这种周边附近的任何过量的离子密度而产生的过程。在第二方面，工件被电介质屏蔽围绕，屏蔽被非介电环覆盖，该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。在第三方面中，电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体，从而改善靠近工件周边的等离子体工艺的空间均匀性。在第四方面，方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。

2. 发明授权

US06440864B1 Substrate cleaning process 失效
标题翻译：基材清洗工艺
公开(公告)号：US06440864B1
公开(公告)日：2002-08-27
申请号：US09607822
申请日：2000-06-30
申请人： Thomas J. Kropewnicki , Jeremiah T. Pender , Henry Fong , Charles Peter Auglis , Raymond Hung , Hongqing Shan
发明人： Thomas J. Kropewnicki , Jeremiah T. Pender , Henry Fong , Charles Peter Auglis , Raymond Hung , Hongqing Shan
IPC分类号： H01L2100
CPC分类号： H01L21/02063 , B08B7/0035 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H05K3/26
摘要： A substrate cleaning method comprises exposing a substrate 30 to an energized process gas to remove residue 60 and resist material 50 from the substrate 30. In one version, the process gas comprises cleaning gas, such as an oxygen-containing gas, and an additive gas, such as NH3. In one version, the process gas is introduced to remove residue 60 and resist material 50 from the substrate and to remove residue from surfaces in the process chamber 75.
摘要翻译：基板清洁方法包括将基板30暴露于通电的处理气体以去除残留物60并从基板30抵抗材料50.在一种形式中，工艺气体包括清洁气体，例如含氧气体和添加气体，如NH3。在一个版本中，引入工艺气体以除去残留物60并从衬底抵抗材料50并从处理室75中的表面去除残留物。

3. 发明授权

US06284093B1 Shield or ring surrounding semiconductor workpiece in plasma chamber 有权
标题翻译：在等离子体室内围绕半导体工件的屏蔽或环
公开(公告)号：US06284093B1
公开(公告)日：2001-09-04
申请号：US09665484
申请日：2000-09-20
申请人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
发明人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
IPC分类号： H01J100
CPC分类号： H01L21/67126 , H01J37/32623 , H01J37/32633 , H01J37/3266 , H01L21/6831 , H01L21/6833 , H01L21/68721 , H01L21/68735 , H02N13/00 , Y10S156/915
摘要： A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.
摘要翻译：围绕等离子体室中的半导体工件的环或环。根据一个方面，所述环具有提升的套环部分，其内表面以与工件的平面成钝角定向，该角度优选为135°。这种角度取向导致离子轰击提升的轴环的内表面沿更平行于工件的平面的方向散射，从而减少工件周边处的任何介电屏蔽的侵蚀，并且改善等离子体中的空间不均匀性由于这种周边附近的任何过量的离子密度而产生的过程。在第二方面，工件被电介质屏蔽围绕，屏蔽被非介电环覆盖，该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。在第三方面中，电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体，从而改善靠近工件周边的等离子体工艺的空间均匀性。在第四方面，方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。

4. 发明授权

US06326307B1 Plasma pretreatment of photoresist in an oxide etch process 失效
标题翻译：氧化物蚀刻工艺中光致抗蚀剂的等离子体预处理
公开(公告)号：US06326307B1
公开(公告)日：2001-12-04
申请号：US09440792
申请日：1999-11-15
申请人： Roger A. Lindley , Henry Fong , Yunsang Kim , Takehito Komatsu , Ajey M. Joshi , Bryan Y. Pu , Hongqing Shan
发明人： Roger A. Lindley , Henry Fong , Yunsang Kim , Takehito Komatsu , Ajey M. Joshi , Bryan Y. Pu , Hongqing Shan
IPC分类号： H01L21302
CPC分类号： H01L21/76802 , H01L21/31116
摘要： A photoresist plasma pretreatment performed prior to a plasma oxide etch. The plasma pretreatment is performed with an argon plasma or a carbon tetrafluoride and trifluoromethane plasma with lower power than in the main etch or is performed with a plasma of difluoromethane or trifluoromethane and carbon monoxide but no argon diluent gas. Thereby, striations on the oxide wall are reduced.
摘要翻译：在等离子体氧化物蚀刻之前执行的光刻胶等离子体预处理。等离子体预处理用氩等离子体或四氟化碳和三氟甲烷等离子体进行，功率低于主蚀刻，或者用二氟甲烷或三氟甲烷和一氧化碳的等离子体进行，而不是氩气稀释气体。因此，氧化物壁上的条纹减小。

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