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1. 发明申请

US20100240428A1 GAME DEVICE, CONTROL METHOD FOR GAME DEVICE, PROGRAM, AND INFORMATION STORAGE MEDIUM 有权
标题翻译：游戏设备，游戏设备的控制方法，程序和信息存储介质
公开(公告)号：US20100240428A1
公开(公告)日：2010-09-23
申请号：US12740733
申请日：2008-09-19
申请人： Hironobu Mori
发明人： Hironobu Mori
IPC分类号： A63F9/24
CPC分类号： A63F13/812 , A63F13/10 , A63F13/2145 , A63F13/26 , A63F13/56 , A63F13/577 , A63F2300/1075 , A63F2300/64 , A63F2300/643 , A63F2300/6607 , A63F2300/8011
摘要： TO provide a game device which can allow a user to feel that an operation subject character loses its balance in a case where the operation subject character hits a moving object in such a state where the operation subject player character is located at a position comparatively far from the moving object in a sport game in which the operation subject character hits the moving object according to a predetermined operation by the user. Determination means (92a) determines whether or not the moving object is positioned in a decision area which is set based on a position of the operation subject character in a case where the predetermined operation is performed. Operation-subject-character control means (92b) causes the operation subject character to hit the moving object in a case where it is determined that the moving object is positioned in the decision area. Decision area control means (92c) controls a size of the decision area after the moving object is hit, based on a position of the moving object at a reference time based on at least one of a time at which the predetermined operation is performed and a time at which the operation subject character hits the moving object.
摘要翻译：提供一种游戏装置，其能够使操作对象角色在操作对象角色位于相对较远的位置的状态下触摸运动对象的情况下感觉到操作对象角色失去平衡运动游戏中的运动对象，其中操作对象角色根据用户的预定操作来撞击移动对象。确定装置（92a）确定移动物体是否位于在执行预定操作的情况下基于操作对象角色的位置设置的判定区域。操作对象字符控制装置（92b）在确定移动对象位于判定区域的情况下使操作对象角色撞击移动对象。决定区域控制装置（92c）基于运动对象在基准时刻的位置，基于执行预定操作的时间中的至少一个来控制移动对象被击中之后的判定区域的大小，以及操作对象角色击中移动对象的时间。

2. 发明授权

US07719873B2 Memory and semiconductor device with memory state detection 有权
标题翻译：具有存储器状态检测的存储器和半导体器件
公开(公告)号：US07719873B2
公开(公告)日：2010-05-18
申请号：US11265894
申请日：2005-11-03
申请人： Hidenari Hachino , Hironobu Mori , Nobumichi Okazaki , Katsuhisa Aratani
发明人： Hidenari Hachino , Hironobu Mori , Nobumichi Okazaki , Katsuhisa Aratani
IPC分类号： G11C11/00
CPC分类号： G11C13/0064 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2213/79
摘要： A memory includes: memory elements arranged in a matrix, each memory element having such characteristics that when an electric signal at a level equal to or higher than that of a first threshold signal is applied to the memory element, the resistance thereof is changed from a high value to a low value, and when an electric signal at a level equal to or higher than that of a second threshold signal is applied thereto, the resistance is changed from the low value to the high value, the polarities of the first and second threshold signals being different from each other; electric circuits for applying electric signals to the memory elements; and detection units each for measuring a current flowing through the corresponding memory element or a voltage applied thereto from the start of the application of electric signals to detect whether the resistance is high or low.
摘要翻译：存储器包括：排列成矩阵的存储器元件，每个存储元件具有这样的特性，即当等于或高于第一阈值信号的电信号被施加到存储元件时，其电阻从高值为低值，当施加等于或高于第二阈值信号的电信号时，电阻从低值变为高值，第一和第二极性的极性阈值信号彼此不同; 用于向存储元件施加电信号的电路; 以及各自的检测单元，用于测量从开始施加电信号开始流过相应的存储元件的电流或施加到其上的电压，以检测电阻是高还是低。

3. 发明授权

US07376801B2 Power saving data storage circuit, data writing method in the same, and data storage device 失效
标题翻译：省电数据存储电路，数据写入方法和数据存储装置
公开(公告)号：US07376801B2
公开(公告)日：2008-05-20
申请号：US10505431
申请日：2003-03-17
申请人： Katsutoshi Moriyama , Hironobu Mori , Hisanobu Tsukazaki
发明人： Katsutoshi Moriyama , Hironobu Mori , Hisanobu Tsukazaki
IPC分类号： G06F12/00
CPC分类号： G11C7/02 , G11C7/1006 , G11C7/1078 , G11C7/22 , G11C2207/2263
摘要： It is an object to provide, in a data storage circuit for storing data, a power saving data storage circuit and a data writing method in the data storage circuit, and, further, to provide a data storage device. Thus, in the present invention, reading out existing data stored in a storage element M is performed prior to performing writing of new data to the storage element M to compare the existing data and the new data. The data storage circuit is configured so that in a case where the existing data and the new data are identical with each other, writing to the storage element M is not performed, and, in a case where the existing data and the new data are not identical with each other, writing of the new data to the storage element M is performed. The data storage circuit is formed on a semiconductor substrate to have a data storage device.
摘要翻译：本发明的目的是在数据存储电路中的用于存储数据的数据存储电路中提供省电数据存储电路和数据写入方法，并且提供数据存储装置。因此，在本发明中，在存储元件M执行写入新数据之前，先读出存储在存储元件M中的现有数据，对现有数据和新数据进行比较。数据存储电路被配置为使得在现有数据和新数据彼此相同的情况下，不执行对存储元件M的写入，并且在现有数据和新数据不是的情况下彼此相同，执行将新数据写入存储元件M。数据存储电路形成在半导体衬底上以具有数据存储装置。

4. 发明申请

US20070247894A1 METHOD OF DRIVING STORAGE DEVICE 有权
标题翻译：驱动存储设备的方法
公开(公告)号：US20070247894A1
公开(公告)日：2007-10-25
申请号：US11738933
申请日：2007-04-23
申请人： Tsunenori Shiimoto , Nobumichi Okazaki , Hironobu Mori , Tomohito Tsushima
发明人： Tsunenori Shiimoto , Nobumichi Okazaki , Hironobu Mori , Tomohito Tsushima
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0097 , G11C2013/009 , G11C2013/0092 , G11C2213/11 , G11C2213/51
摘要： A method of driving a storage device including a variable resistance element in which resistance value is changed reversibly between a high resistance state and a low resistance state by applying voltages with different polarities between two electrodes is provided. The storage device includes a plurality of memory cells formed of the variable resistance elements. The method includes the step of applying voltages more than once in combination to the memory cell when the variable resistance element is changed from the low resistance state to the high resistance state.
摘要翻译：提供了一种通过在两个电极之间施加不同极性的电压来驱动包括可变电阻元件的存储装置的方法，其中电阻值在高电阻状态和低电阻状态之间可逆地改变。存储装置包括由可变电阻元件形成的多个存储单元。该方法包括当可变电阻元件从低电阻状态改变为高电阻状态时，将多次电压组合施加到存储单元的步骤。

5. 发明授权

US07020010B2 Magnetic storage apparatus using ferromagnetic tunnel junction devices 失效
标题翻译：使用铁磁隧道结装置的磁存储装置
公开(公告)号：US07020010B2
公开(公告)日：2006-03-28
申请号：US10503658
申请日：2003-02-07
申请人： Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
发明人： Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic storage apparatus provided using ferromagnetic tunnel junction devices is constituted by forming the ferromagnetic tunnel junction device by laminating a fixed magnetization layer and a free magnetization layer on top and back surfaces of a tunnel barrier layer, respectively, wiring word lines in the magnetization direction of the fixed magnetization layer of the ferromagnetic tunnel junction device, and wiring bit lines in the direction orthogonal to the magnetization direction of the fixed magnetization layer of the ferromagnetic tunnel junction device, wherein two different memory states can be written in the ferromagnetic tunnel junction device by inverting the direction of the current flowing through the bit lines. At the time of writing in the ferromagnetic tunnel junction device, the direction of the current flowing through the word line is inverted in the same direction as or the opposite direction to the magnetization direction of the fixed magnetization layer.
摘要翻译：使用铁磁隧道结装置提供的磁存储装置通过分别在隧道势垒层的顶表面和背表面上层叠固定磁化层和自由磁化层来形成铁磁隧道结装置，分别在磁化方向上布线字线的铁磁隧道结装置的固定磁化层，以及在与铁磁隧道结装置的固定磁化层的磁化方向正交的方向上的布线位线，其中可以将两个不同的存储器状态写入铁磁隧道结装置通过反转流过位线的电流的方向。在铁磁隧道结装置中写入时，流过字线的电流的方向与固定磁化层的磁化方向相同或相反的方向反转。

6. 发明申请

US20050235118A1 Data storage circuit, data write method in the data storage circuit, and data storage device 失效
标题翻译：数据存储电路，数据存储电路中的数据写入方式以及数据存储装置
公开(公告)号：US20050235118A1
公开(公告)日：2005-10-20
申请号：US10505431
申请日：2003-03-17
申请人： Katsutoshi Moriyama , Hironobu Mori , Hisanobu Tsukazaki
发明人： Katsutoshi Moriyama , Hironobu Mori , Hisanobu Tsukazaki
IPC分类号： G11C11/14 , G11C7/02 , G11C7/10 , G11C7/22 , G11C11/15 , G11C16/02 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792 , H01L43/08 , G06F13/28
CPC分类号： G11C7/02 , G11C7/1006 , G11C7/1078 , G11C7/22 , G11C2207/2263
摘要： It is an object to, in a data storage circuit for storing data, provide a power saving data storage circuit and a data writing method in the data storage circuit, and further, a data storage device. Thus, in the present invention, reading out of existing data stored in a storage element M is performed prior to performing writing of new data to the storage element M to compare the existing data and the new data. The data storage circuit is configured so that in a case where the existing data and the new data are identical with each other, writing to the storage element M is not performed and, in a case where the existing data and the new data are not identical with each other, writing of the new data to the storage element M is performed. The data storage circuit is formed on a semiconductor substrate to have a data storage device.
摘要翻译：在数据存储电路中存储数据的目的在于，在数据存储电路中提供省电数据存储电路和数据写入方法，另外，还包括数据存储装置。因此，在本发明中，在对存储元件M进行新数据的写入之前，对存储在存储元件M中的现有数据进行读出，以比较现有数据和新数据。数据存储电路被配置为使得在现有数据和新数据彼此相同的情况下，不执行对存储元件M的写入，并且在现有数据和新数据不相同的情况下相互之间，执行将新数据写入存储元件M。数据存储电路形成在半导体衬底上以具有数据存储装置。

7. 发明申请

US20050226033A1 Composite storage circuit and semiconductor device having the same composite storage circuit 失效
标题翻译：具有相同复合存储电路的复合存储电路和半导体器件
公开(公告)号：US20050226033A1
公开(公告)日：2005-10-13
申请号：US10522316
申请日：2003-07-22
申请人： Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
发明人： Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
IPC分类号： G11C11/41 , G11C11/00 , G11C11/14 , G11C14/00 , G11C16/02
CPC分类号： G11C14/0081 , G11C11/005 , G11C11/14
摘要： An object of the present invention is to provide a compound storage circuit that includes a storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and that is arranged to be capable of an instant-on function by storing information equal to storage information stored in the volatile storage circuit into the nonvolatile storage circuit, the compound storage circuit being capable of reducing power consumption, and a semiconductor device including the compound storage circuit. According to the present invention, in a compound storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and a semiconductor device including the compound storage circuit, a determination circuit for comparing first storage information stored in the volatile storage circuit with second storage information that has already been stored in the nonvolatile storage circuit when storage information stored in the volatile storage circuit is written into the nonvolatile storage circuit is provided, and the first storage information is written into the nonvolatile storage circuit only when the first storage information is not equal to the second storage information.
摘要翻译：本发明的目的是提供一种复合存储电路，它包括一个存储电路，该存储电路包括一个彼此并联连接的易失性存储电路和一个非易失性存储电路，它被设置为能够通过存储信息等于存储在易失性存储电路中的存储信息到非易失性存储电路中，复合存储电路能够降低功耗，以及包括复合存储电路的半导体器件。根据本发明，在包括彼此并联连接的易失性存储电路和非易失性存储电路的复合存储电路和包括复合存储电路的半导体器件中，确定电路用于比较存储在易失性存储器提供了当存储在易失性存储电路中的存储信息被写入非易失性存储电路时已经存储在非易失性存储电路中的具有第二存储信息的电路，并且仅当第一存储信息被写入非易失性存储电路时，存储信息不等于第二存储信息。

8. 发明授权

US09233302B2 Game program, game device and game control method 有权
标题翻译：游戏程序，游戏设备和游戏控制方法
公开(公告)号：US09233302B2
公开(公告)日：2016-01-12
申请号：US13248743
申请日：2011-09-29
申请人： Kazuhiro Nanba , Masatoshi Yamaoka , Hironobu Mori , Syuichi Myogan
发明人： Kazuhiro Nanba , Masatoshi Yamaoka , Hironobu Mori , Syuichi Myogan
IPC分类号： A63F13/00 , A63F13/214 , A63F13/2145 , A63F13/40
CPC分类号： A63F13/426 , A63F13/10 , A63F13/2145 , A63F13/53 , A63F13/812 , A63F2300/1075 , A63F2300/303 , A63F2300/406 , A63F2300/6045 , A63F2300/8011
摘要： It is an object of the present invention to allow a game player to quickly and easily give a command to a game character. In the present program, an object moving on a first path is displayed on an image display unit. When an instruction section is then slid in contact with the image display unit, the slide distance of the instruction section is calculated. An action pattern of a character with respect to an object is then set in accordance with the slide distance. A determination region is set in accordance with the action pattern. A positional relation between the object and the determination region is then determined, and the object moving on a second path is displayed on the image display unit.
摘要翻译：本发明的目的是允许游戏者快速且容易地给出游戏角色的命令。在本程序中，在图像显示单元上显示在第一路径上移动的物体。当指令部分随后与图像显示单元接触滑动时，计算指令部分的滑动距离。然后根据滑动距离来设置字符相对于对象的动作模式。根据动作模式设定确定区域。然后确定对象和确定区域之间的位置关系，并且在图像显示单元上显示在第二路径上移动的对象。

9. 发明授权

US08277321B2 Game device, control method for game device, program, and information storage medium 有权
标题翻译：游戏装置，游戏装置的控制方法，程序和信息存储介质
公开(公告)号：US08277321B2
公开(公告)日：2012-10-02
申请号：US12740733
申请日：2008-09-19
申请人： Hironobu Mori
发明人： Hironobu Mori
IPC分类号： A63F9/24
CPC分类号： A63F13/812 , A63F13/10 , A63F13/2145 , A63F13/26 , A63F13/56 , A63F13/577 , A63F2300/1075 , A63F2300/64 , A63F2300/643 , A63F2300/6607 , A63F2300/8011
摘要： To provide a game device which can allow a user to feel that an operation subject character loses its balance in a case where the operation subject character hits a moving object in such a state where the operation subject player character is located at a position comparatively far from the moving object in a sport game in which the operation subject character hits the moving object according to a predetermined operation by the user. Determination means (92a) determines whether or not the moving object is positioned in a decision area which is set based on a position of the operation subject character in a case where the predetermined operation is performed. Operation-subject-character control means (92b) causes the operation subject character to hit the moving object in a case where it is determined that the moving object is positioned in the decision area. Decision area control means (92c) controls a size of the decision area after the moving object is hit, based on a position of the moving object at a reference time based on at least one of a time at which the predetermined operation is performed and a time at which the operation subject character hits the moving object.
摘要翻译：为了提供一种游戏装置，其能够使操作对象角色在操作对象角色位于相对较远的位置的状态下感觉到操作对象角色失去平衡的情况下运动游戏中的运动对象，其中操作对象角色根据用户的预定操作来撞击移动对象。确定装置（92a）确定移动物体是否位于在执行预定操作的情况下基于操作对象角色的位置设置的判定区域。操作对象字符控制装置（92b）在确定移动对象位于判定区域的情况下使操作对象角色撞击移动对象。决定区域控制装置（92c）基于运动对象在基准时刻的位置，基于执行预定操作的时间中的至少一个来控制移动对象被击中之后的判定区域的大小，以及操作对象角色击中移动对象的时间。

10. 发明授权

US07423902B2 Storage device and semiconductor apparatus 有权
标题翻译：存储装置和半导体装置
公开(公告)号：US07423902B2
公开(公告)日：2008-09-09
申请号：US11420290
申请日：2006-05-25
申请人： Hironobu Mori , Hidenari Hachino , Nobumichi Okazaki
发明人： Hironobu Mori , Hidenari Hachino , Nobumichi Okazaki
IPC分类号： G11C11/14
CPC分类号： G11C11/22 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0061 , G11C13/0069 , G11C13/0097 , G11C2213/31 , G11C2213/79
摘要： A storage device includes memory cells disposed in a matrix. The memory cells each include a storage element whose resistance changes from a higher state to a lower state when an electric signal of a first threshold level or higher is applied and whose resistance changes from the lower state to the higher state when an electric signal of a second threshold level or higher whose polarity is different from the polarity of the electric signal of the first threshold level or higher is applied, and a circuit element connected in series with the storage element. In a state in which an erasing voltage is applied to at least one memory cell on which erasing is currently being performed, after the lapse of a predetermined time from the application, an erasing voltage is applied to at least one memory cell on which erasing is to be next performed.
摘要翻译：存储装置包括设置在矩阵中的存储单元。存储单元各自包括存储元件，当第一阈值电平或更高的电信号被施加时，其电阻从较高状态变化到较低状态，并且当电信号为施加极性与第一阈值或更高的电信号的极性不同的第二阈值电平，以及与存储元件串联连接的电路元件。在将擦除电压施加到至少一个存储单元的状态下，当前正在进行擦除的存储单元中，在从应用经过预定时间之后，将擦除电压施加到至少一个存储单元，擦除是接下来执行。

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