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1. 发明授权

US08981325B2 Memory device and storage apparatus 有权
标题翻译：存储设备和存储设备
公开(公告)号：US08981325B2
公开(公告)日：2015-03-17
申请号：US12703247
申请日：2010-02-10
申请人： Katsuhisa Aratani , Akihiro Maesaka , Akira Kouchiyama , Tomohito Tsushima
发明人： Katsuhisa Aratani , Akihiro Maesaka , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： H01L47/00 , H01L29/00 , G11C13/00 , H01L45/00 , H01L27/24
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.
摘要翻译：记忆装置10具有这样的结构，其中存储薄膜4夹在第一和第二电极2和6之间，记忆薄膜6至少含有稀土元素，存储薄膜4或与记忆薄膜4包含选自Cu，Ag，Zn和记忆薄膜4中的任一种元素，或者与存储薄膜4接触的层3包含选自Te，S，Se中的任何一种元素。存储装置可以容易地稳定地记录和读取信息，并且可以通过相对简单的制造方法容易地制造该存储装置。

2. 发明申请

US20120218809A1 STORAGE APPARATUS AND OPERATION METHOD FOR OPERATING THE SAME 有权
标题翻译：存储装置和操作方法
公开(公告)号：US20120218809A1
公开(公告)日：2012-08-30
申请号：US13397282
申请日：2012-02-15
申请人： Makoto Kitagawa , Tsunenori Shiimoto , Tomohito Tsushima
发明人： Makoto Kitagawa , Tsunenori Shiimoto , Tomohito Tsushima
IPC分类号： G11C11/00
CPC分类号： G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C13/0097 , G11C2213/79
摘要： A storage apparatus includes: a plurality of storage elements configured to have the resistance state thereof changed in accordance with an applied voltage; and a drive portion configured to perform a resistance change operation and a read operation, the resistance change operation involving writing or erasing information to or from the storage elements by changing the resistance state thereof, the read operation involving reading the information from the storage elements; wherein the drive portion includes an amplifier configured to output a read signal upon execution of the read operation, a constant current load, and a control portion configured to perform the resistance change operation and a direct verify operation on the storage elements, the direct verify operation involving carrying out, subsequent to the resistance change operation, the read operation for verifying whether the writing or erasing of the information to or from the storage elements has been normally accomplished.
摘要翻译：存储装置包括：多个存储元件，其被配置为根据施加的电压使其电阻状态发生变化; 以及驱动部，被配置为执行电阻变化操作和读取操作，所述电阻改变操作涉及通过改变其电阻状态来从存储元件写入或擦除信息，所述读取操作涉及从存储元件读取信息; 其特征在于，所述驱动部具有：放大器，被配置为在执行所述读取操作时输出读取信号;恒定电流负载;以及被配置为对所述存储元件执行电阻变化操作和直接验证操作的控制部，所述直接验证操作涉及在电阻变化操作之后进行用于验证是否正常地完成对存储元件的写入或擦除信息的读取操作。

3. 发明授权

US08213214B2 Storage device and information rerecording method 有权
标题翻译：存储设备和信息记录方法
公开(公告)号：US08213214B2
公开(公告)日：2012-07-03
申请号：US12747413
申请日：2008-12-11
申请人： Tomohito Tsushima , Tsunenori Shiimoto , Shuichiro Yasuda
发明人： Tomohito Tsushima , Tsunenori Shiimoto , Shuichiro Yasuda
IPC分类号： G11C11/00
CPC分类号： G11C13/0064 , G11C13/0069 , G11C2013/0071 , G11C2013/009 , G11C2213/56 , G11C2213/79
摘要： A storage device that improves ability of adjusting a resistance value level in recording and enables stable verification control is provided. VWL supplied from a second power source to a control terminal of a transistor is increased (increase portion: ΔVWL) for every rerecording by verification control by a WL adjustment circuit. In the case where a variable resistive element is able to record multiple values, ΔVWL is a value variable for every resistance value level of multiple value information. That is, ΔVWL is a value variable according to magnitude relation of a variation range of recording resistance of the variable resistive element due to a current. In the region where the variation range of the recording resistance is large (source-gate voltage VGS of the transistor is small), ΔVWL is small, while in the region where the variation range of the recording resistance is small (VGS is large), ΔVWL is large.
摘要翻译：提供一种存储装置，其提高了在记录中调整电阻值电平的能力并且实现了稳定的验证控制。通过WL调整电路的验证控制，每次重新录制时，从第二电源向晶体管的控制端子提供的VWL增加（增加部分：＆Dgr; VWL）。在可变电阻元件能够记录多个值的情况下，＆Dgr; VWL是多值信息的每个电阻值电平的值变量。也就是说，＆Dgr; VWL是根据由于电流引起的可变电阻元件的记录电阻的变化范围的大小关系的值变量。在记录电阻的变化范围大（晶体管的源极栅极电压VGS小）的区域中，＆Dgr; VWL小，而在记录电阻的变化范围小（VGS大的区域）），＆Dgr; VWL很大。

4. 发明授权

US08102716B2 Nonvolatile semiconductor memory device and method for performing verify write operation on the same 有权
标题翻译：非易失性半导体存储器件及其执行验证写入操作的方法
公开(公告)号：US08102716B2
公开(公告)日：2012-01-24
申请号：US12654783
申请日：2010-01-04
申请人： Tsunenori Shiimoto , Makoto Kitagawa , Tomohito Tsushima
发明人： Tsunenori Shiimoto , Makoto Kitagawa , Tomohito Tsushima
IPC分类号： G11C11/34
CPC分类号： G11C13/0011 , G11C13/0061 , G11C13/0064 , G11C13/0069 , G11C2013/0078 , G11C2013/0088 , G11C2213/11 , G11C2213/34 , G11C2213/56 , G11C2213/79
摘要： Disclosed herein is a nonvolatile semiconductor memory device including a plurality of memory cells; and a driver circuit configured to perform a verify write operation in a cycle including selecting from an array of the plurality of memory cells a predetermined number of memory cells constituting a write cell unit, writing data collectively to the predetermined number of memory cells, and verifying the written data, the driver circuit further performing the verify write operation repeatedly until all memory cells within the write cell unit are found to have passed the verification.
摘要翻译：这里公开了一种包括多个存储单元的非易失性半导体存储器件; 以及驱动电路，被配置为在循环中执行验证写入操作，包括从多个存储器单元的阵列中选择构成写入单元单元的预定数量的存储单元，将数据共同地写入预定数量的存储单元，以及验证写入的数据，驱动器电路进一步执行验证写入操作，直到发现写入单元单元内的所有存储单元已经通过验证。

5. 发明申请

US20100195370A1 Nonvolatile semiconductor memory device and method for performing verify write operation on the same 有权
标题翻译：非易失性半导体存储器件及其执行验证写入操作的方法
公开(公告)号：US20100195370A1
公开(公告)日：2010-08-05
申请号：US12654783
申请日：2010-01-04
申请人： Tsunenori Shiimoto , Makoto Kitagawa , Tomohito Tsushima
发明人： Tsunenori Shiimoto , Makoto Kitagawa , Tomohito Tsushima
IPC分类号： G11C11/00 , G11C8/00 , G11C7/00
CPC分类号： G11C13/0011 , G11C13/0061 , G11C13/0064 , G11C13/0069 , G11C2013/0078 , G11C2013/0088 , G11C2213/11 , G11C2213/34 , G11C2213/56 , G11C2213/79
摘要： Disclosed herein is a nonvolatile semiconductor memory device including a plurality of memory cells; and a driver circuit configured to perform a verify write operation in a cycle including selecting from an array of the plurality of memory cells a predetermined number of memory cells constituting a write cell unit, writing data collectively to the predetermined number of memory cells, and verifying the written data, the driver circuit further performing the verify write operation repeatedly until all memory cells within the write cell unit are found to have passed the verification.
摘要翻译：这里公开了一种包括多个存储单元的非易失性半导体存储器件; 以及驱动电路，被配置为在循环中执行验证写入操作，包括从多个存储器单元的阵列中选择构成写入单元单元的预定数量的存储单元，将数据共同地写入预定数量的存储单元，以及验证写入的数据，驱动器电路进一步执行验证写入操作，直到发现写入单元单元内的所有存储单元已经通过验证。

6. 发明授权

US07372718B2 Storage and semiconductor device 有权
标题翻译：存储和半导体器件
公开(公告)号：US07372718B2
公开(公告)日：2008-05-13
申请号：US11243342
申请日：2005-10-04
申请人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
发明人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： G11C13/00 , G11C13/0069 , G11C2013/0078 , G11C2013/009 , G11C2213/79
摘要： A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.
摘要翻译：存储装置包括存储元件，其具有使得其电阻值由于高于或等于施加的第一阈值信号的电信号而从高状态变为低状态的特性，并且从低状态改变为作为高于或等于极性与施加的第一阈值信号的极性不同的第二阈值信号的电信号的结果的高状态; 以及电路元件，其与所述存储元件串联连接并用作负载，所述存储元件和所述电路元件形成存储单元，并且所述存储单元被布置成矩阵，其中所述电路元件的电阻值当存储元件被读取时与存储元件被写入或擦除时的电阻值不同。

7. 发明申请

US20050121697A1 Storage device 有权
标题翻译：储存设备
公开(公告)号：US20050121697A1
公开(公告)日：2005-06-09
申请号：US10999050
申请日：2004-11-29
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： G11C16/04 , G11C13/02 , H01L27/10 , H01L31/109 , H01L45/00
CPC分类号： G11C13/0011 , G11C13/0009 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/72 , G11C2213/79 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/144 , H01L45/146
摘要： A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.
摘要翻译：存储装置包括第一电极，面对第一电极的第二电极，设置在第一电极和第二电极之间的电极间材料层，以及向第一和第二电极施加预定电压的电压施加单元。此外，通过向第一和第二电极施加电压而可变化为电极反应抑制层的氧化还原活性物质被包含在被电场覆盖的区域中，电场在施加电压时产生，并且电极反应抑制层沿着第二电极和电极间材料层之间的界面区域形成，或者改变其面积，或者根据第一和第二电压的施加条件而消失。

8. 发明授权

US08884397B2 Memory device and storage apparatus 有权
标题翻译：存储设备和存储设备
公开(公告)号：US08884397B2
公开(公告)日：2014-11-11
申请号：US12961088
申请日：2010-12-06
申请人： Katsuhisa Aratani , Akihiro Maesaka , Akira Kouchiyama , Tomohito Tsushima
发明人： Katsuhisa Aratani , Akihiro Maesaka , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： H01L29/00 , H01L47/00 , H01L45/00 , G11C13/00 , H01L27/24
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 having an arrangement in which a memory thin film is sandwiched between first and second electrodes, the memory thin film contains at least rare earth elements, the memory thin film 4 or a layer in contact with the memory thin film contains any one of elements selected from Cu, Ag, Zn and the memory thin film or the layer in contact with the memory thin film contains any one of elements selected from Te, S, Se.
摘要翻译：具有这样一种结构的存储器件10，其中存储薄膜夹在第一和第二电极之间，存储薄膜至少含有稀土元素，存储薄膜4或与存储薄膜接触的层包含任何一种选自Cu，Ag，Zn和记忆薄膜的元素或与记忆薄膜接触的层包含选自Te，S，Se中的任何一种元素。

9. 发明授权

US08446756B2 Method of stabilizing data hold operations of a storage device 有权
标题翻译：稳定存储设备的数据保持操作的方法
公开(公告)号：US08446756B2
公开(公告)日：2013-05-21
申请号：US12671939
申请日：2008-08-12
申请人： Tsunenori Shiimoto , Nobumichi Okazaki , Tomohito Tsushima
发明人： Tsunenori Shiimoto , Nobumichi Okazaki , Tomohito Tsushima
IPC分类号： G11C11/00
CPC分类号： G11C13/00 , G11C13/0061 , G11C13/0069 , G11C2013/0071 , G11C2013/0073 , G11C2013/0092 , G11C2213/56 , H01L27/101 , H01L45/085 , H01L45/1266 , H01L45/146
摘要： Provided is a method of driving a storage device capable of improving reliability of data write in the storage device including a variable resistance element. At the time of data write operation, a plurality of write pulses having shapes different from each other are applied between electrodes 21 and 24 in a variable resistance element 2. Diffusion loss of a conductive path caused by self-heat generation (generation of Joule heat) of the variable resistance element 2 may be prevented, and thus data hold operation after write is stabilized. Also, the variable resistance element 2 may be prevented from being destructed when the write operation is sufficiently performed, and thus the data write operation is stabilized.
摘要翻译：提供一种驱动能够提高包括可变电阻元件的存储装置中的数据写入的可靠性的存储装置的方法。在数据写入操作时，在可变电阻元件2中的电极21和24之间施加具有彼此不同形状的多个写入脉冲。由自发热引起的导电路径的扩散损耗（产生焦耳热）可以防止可变电阻元件2的数据保持操作。此外，当充分执行写入操作时，可以防止可变电阻元件2被破坏，从而使数据写入操作稳定。

10. 发明授权

US08350248B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08350248B2
公开(公告)日：2013-01-08
申请号：US12349644
申请日：2009-01-07
申请人： Shuichiro Yasuda , Tomohito Tsushima , Satoshi Sasaki , Katsuhisa Aratani
发明人： Shuichiro Yasuda , Tomohito Tsushima , Satoshi Sasaki , Katsuhisa Aratani
IPC分类号： H01L47/00
CPC分类号： G11C13/02 , G11C2213/11 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625
摘要： A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.
摘要翻译：提供了一种电阻变化型存储器件，其中写入时的数据保持特性得到改善。存储器件包括：多个存储元件，其中存储层设置在第一电极和第二电极之间，使得根据存储层的电特性的变化来写入或擦除数据; 以及对多个存储元件选择性地施加电压脉冲或电流脉冲的脉冲施加装置。存储层包括离子源层，其包括离子传导材料和至少一种金属元素，离子源层还含有氧。

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