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1. 发明申请

US20120000986A1 CANISTER FOR DEPOSITION APPARATUS AND DEPOSITION APPARATUS USING SAME 审中-公开
标题翻译：用于沉积装置和沉积装置的装置
公开(公告)号：US20120000986A1
公开(公告)日：2012-01-05
申请号：US13009279
申请日：2011-01-19
申请人： Min-Jae JEONG , Ki-Yong Lee , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo Soo , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
发明人： Min-Jae JEONG , Ki-Yong Lee , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo Soo , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
IPC分类号： F24D5/00
CPC分类号： C23C16/4481 , C23C16/45525 , C23C16/52
摘要： A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.
摘要翻译：一种用于沉积设备的罐和使用其的沉积设备，更具体地，涉及一种用于沉积设备的罐，其可以提供均匀量的源材料，所述源材料包含在供应到沉积室中的反应气体中，并且提高了供应源材料和使用该罐的沉积装置。沉积设备包括沉积室; 向所述沉积室供应反应气体的罐; 以及载体气体供给器，用于将载气供应到罐中，其中罐包括主体，加热单元加热主体，温度测量单元设置在主体下方。

2. 发明申请

US20100224883A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
公开(公告)号：US20100224883A1
公开(公告)日：2010-09-09
申请号：US12714201
申请日：2010-02-26
申请人： Byoung-Keon PARK , Tae-Hoo Yang , Jin-Wook Seo , Ki-Yong Lee , Maxim Lisachenko , Bo-Kyung Choi , Dae-Woo Lee , Kil-Won Lee , Dong-Hyun Lee , Jong-Ryuk Park , Ji-Su Ahn , Yong-Dae Kim , Heung-Yeol Na , Min-Jae Jeong , Yun-Mo Chung , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Jae-Wan Jung , Sang-Yon Yoon
发明人： Byoung-Keon PARK , Tae-Hoo Yang , Jin-Wook Seo , Ki-Yong Lee , Maxim Lisachenko , Bo-Kyung Choi , Dae-Woo Lee , Kil-Won Lee , Dong-Hyun Lee , Jong-Ryuk Park , Ji-Su Ahn , Yong-Dae Kim , Heung-Yeol Na , Min-Jae Jeong , Yun-Mo Chung , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Jae-Wan Jung , Sang-Yon Yoon
IPC分类号： H01L33/16 , H01L29/786 , H01L21/336 , H01L21/20
CPC分类号： H01L29/6675 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.
摘要翻译：薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层，以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。

3. 发明授权

US08658002B2 System for sputtering and method thereof 有权
标题翻译：溅射系统及其方法
公开(公告)号：US08658002B2
公开(公告)日：2014-02-25
申请号：US12911569
申请日：2010-10-25
申请人： Eu-Gene Kang , Won-Hyouk Jang
发明人： Eu-Gene Kang , Won-Hyouk Jang
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , C23C14/545 , H01J37/32963 , H01J37/3299 , H01J37/34
摘要： A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.
摘要翻译：溅射方法包括接收在干蚀刻工艺中检测到的第一衬底的蚀刻时间信息，根据第一衬底的蚀刻时间信息计算第二衬底的沉积时间，以及基于计算的沉积时间执行第二衬底的溅射。可以通过使用在端点检测（EPD）装置中检测到的蚀刻终点信息，均匀地保持沉积在溅射装置中的基板上的薄膜的厚度。溅射系统包括用于执行用于通过溅射法在衬底上沉积薄膜的溅射工艺的溅射装置，用于产生EPD信息的EPD装置，包括用于计算沉积时间的衬底的蚀刻时间信息，以及用于通过使用EPD信息计算沉积时间的控制器，以及基于计算出的沉积时间来控制溅射装置。

4. 发明授权

US08373097B2 Apparatus for thermally processing substrate 有权
标题翻译：用于热处理衬底的装置
公开(公告)号：US08373097B2
公开(公告)日：2013-02-12
申请号：US12713982
申请日：2010-02-26
申请人： Heung-Yeol Na , Min-Jae Jeong , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo So , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
发明人： Heung-Yeol Na , Min-Jae Jeong , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo So , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
IPC分类号： F27D11/00 , A21B1/00 , A21B1/22
CPC分类号： F27B17/0025 , H01L21/67109
摘要： An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.
摘要翻译：一种用于热加工多个基板的装置，包括处理室，其中堆叠有多个基板的船只装载在该处理室中;以及加热器室，与处理室分离并具有多个加热器以向处理室施加热量。这里，加热器安装成对应于多个基板的所有侧面。因此，可以使处理室中的温度分布最小化并且均匀地向多个基板的整个区域供给热量。

5. 发明授权

US08366832B2 Driving shaft of effusion cell for deposition system and deposition system having the same 有权
标题翻译：用于沉积系统和沉积系统的渗流池的驱动轴具有相同的功能
公开(公告)号：US08366832B2
公开(公告)日：2013-02-05
申请号：US11324346
申请日：2006-01-04
申请人： Sung Wha Jung , Eu Gene Kang
发明人： Sung Wha Jung , Eu Gene Kang
IPC分类号： C23C16/00
CPC分类号： C30B23/002 , C23C14/042 , C23C14/24 , C30B29/54
摘要： Apparatus for a deposition system includes a sealing apparatus that seals the drive shaft from the deposition material to prevent the deposition material from adhering to the drive shaft, a moving apparatus to reduce the weight of a shelf on the drive shaft, and a collision-preventing apparatus that measures the distance between a shelf and an adjacent article.
摘要翻译：用于沉积系统的装置包括密封装置，其将驱动轴与沉积材料密封以防止沉积材料粘附到驱动轴上，移动装置减小驱动轴上的搁架的重量和防碰撞测量货架和相邻物品之间距离的装置。

6. 发明授权

US08343281B2 Source gas supply unit, and deposition apparatus and method using the same 失效
标题翻译：源气体供应单元，以及使用其的沉积设备和方法
公开(公告)号：US08343281B2
公开(公告)日：2013-01-01
申请号：US12711495
申请日：2010-02-24
申请人： Jong-Won Hong , Min-Jae Jeong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang
发明人： Jong-Won Hong , Min-Jae Jeong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang
IPC分类号： C23C16/00 , C23C16/52 , C23C16/448
CPC分类号： F17D1/02 , C23C16/4485 , C23C16/52 , Y10T137/0318
摘要： Provided are a source gas supply unit capable of supplying a constant amount of source gas to a deposition chamber to deposit a uniform layer, and a deposition apparatus and method using the same. The source gas supply unit includes a canister in which a source is stored, a heater heating the canister, a source gas supply pipe provided on one side of the canister, a measuring unit installed on the source gas supply pipe and measuring an amount of source gas passing through the source gas supply pipe, and a temperature controller connected to the heater and the measuring unit. The temperature controller controls the heater based on the amount of the source gas measured by the measuring unit.
摘要翻译：提供能够向沉积室供给恒定量的源气体以沉积均匀层的源气体供应单元，以及使用该源气体供应单元的沉积设备和方法。源气体供给单元包括储存有源的罐，加热罐的加热器，设置在罐的一侧的源气体供给管，安装在源气体供给管上并测量源的量的测量单元通过原料气体供给管的气体以及连接到加热器和测量单元的温度控制器。温度控制器基于由测量单元测量的源气体的量来控制加热器。

7. 发明申请

US20110272275A1 System for Sputtering and Method Thereof 有权
标题翻译：溅射系统及其方法
公开(公告)号：US20110272275A1
公开(公告)日：2011-11-10
申请号：US12911569
申请日：2010-10-25
申请人： Eu-Gene Kang , Won-Hyouk Jang
发明人： Eu-Gene Kang , Won-Hyouk Jang
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , C23C14/545 , H01J37/32963 , H01J37/3299 , H01J37/34
摘要： A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.
摘要翻译：溅射方法包括接收在干蚀刻工艺中检测到的第一衬底的蚀刻时间信息，根据第一衬底的蚀刻时间信息计算第二衬底的沉积时间，以及基于计算的沉积时间执行第二衬底的溅射。可以通过使用在端点检测（EPD）装置中检测到的蚀刻终点信息，均匀地保持沉积在溅射装置中的基板上的薄膜的厚度。溅射系统包括用于执行用于通过溅射法在衬底上沉积薄膜的溅射工艺的溅射装置，用于产生EPD信息的EPD装置，包括用于计算沉积时间的衬底的蚀刻时间信息，以及用于通过使用EPD信息计算沉积时间的控制器，以及基于计算出的沉积时间来控制溅射装置。

8. 发明授权

US08048783B2 Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same 有权
标题翻译：形成多晶硅层的方法和用于其的原子层沉积装置
公开(公告)号：US08048783B2
公开(公告)日：2011-11-01
申请号：US12714252
申请日：2010-02-26
申请人： Yun-Mo Chung , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
发明人： Yun-Mo Chung , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , C23C14/04 , H01L21/02422 , H01L21/02488 , H01L21/02672
摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
摘要翻译：一种形成多晶硅层的方法和用于其的原子层沉积装置。该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

9. 发明申请

US20110263107A1 METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER AND ATOMIC LAYER DEPOSITION APPARATUS USED FOR THE SAME 有权
标题翻译：形成多晶硅层的方法和用于其的原子沉积沉积装置
公开(公告)号：US20110263107A1
公开(公告)日：2011-10-27
申请号：US13177936
申请日：2011-07-07
申请人： Yun-Mo CHUNG , Ki-Yong LEE , Min-Jae JEONG , Jin-Wook SEO , Jong-Won HONG , Heung-Yeol NA , Eu-Gene KANG , Seok-Rak CHANG , Tae-Hoon YANG , Ji-Su AHN , Young-Dae KIM , Byoung-Keon PARK , Kil-Won LEE , Dong-Hyun LEE , Sang-Yon YOON , Jong-Ryuk PARK , Bo-Kyung CHOI , Maxim LISACHENKO
发明人： Yun-Mo CHUNG , Ki-Yong LEE , Min-Jae JEONG , Jin-Wook SEO , Jong-Won HONG , Heung-Yeol NA , Eu-Gene KANG , Seok-Rak CHANG , Tae-Hoon YANG , Ji-Su AHN , Young-Dae KIM , Byoung-Keon PARK , Kil-Won LEE , Dong-Hyun LEE , Sang-Yon YOON , Jong-Ryuk PARK , Bo-Kyung CHOI , Maxim LISACHENKO
IPC分类号： H01L21/20 , C23C16/48 , C23C16/455 , C23C16/24 , C23C16/04
CPC分类号： H01L21/02532 , C23C14/04 , H01L21/02422 , H01L21/02488 , H01L21/02672
摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
摘要翻译：一种形成多晶硅层的方法和用于其的原子层沉积装置。该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

10. 发明申请

US20110120859A1 SPUTTERING APPARATUS 有权
标题翻译：溅射装置
公开(公告)号：US20110120859A1
公开(公告)日：2011-05-26
申请号：US12948650
申请日：2010-11-17
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park , Yun-Mo Chung , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung , Jong-Ryuk Park , Bo-Kyung Choi , Won-Bong Baek , Byung-Soo So , Jong-Won Hong , Min-Jae Jeong , Heung-Yeol Na , Ivan Maidanchuk , Eu-Gene Kang , Seok-Rak Chang
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park , Yun-Mo Chung , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung , Jong-Ryuk Park , Bo-Kyung Choi , Won-Bong Baek , Byung-Soo So , Jong-Won Hong , Min-Jae Jeong , Heung-Yeol Na , Ivan Maidanchuk , Eu-Gene Kang , Seok-Rak Chang
IPC分类号： C23C14/34 , C23C14/18
CPC分类号： C23C14/3407 , C23C14/185 , C23C14/34 , H01J37/3417 , H01J37/3435 , H01J37/3438
摘要： Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm.
摘要翻译：提供一种溅射装置，其以非常低的浓度将金属催化剂沉积在非晶硅层上以使非晶硅结晶，并且特别地最小化由预溅射工艺引起的金属催化剂的不均匀性而不降低工艺效率。该溅射装置以非常低的浓度提高沉积在非晶硅层上的金属催化剂的均匀性。溅射装置包括具有第一和第二区域的处理室，位于处理室内的金属靶，移动金属靶的靶转印单元，具有用于控制从金属靶排出的金属催化剂的行进方向的第一屏蔽件，以及设置在所述第二区域中以能够面对所述金属靶的衬底保持器。作为装载在基板保持架上的基板与金属对象物之间的距离的线性距离与第一屏蔽件的长度之间的距离差小于3cm。

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