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1. 发明授权

US08409887B2 Organic light emitting diode display device and method of fabricating the same 有权
公开(公告)号：US08409887B2
公开(公告)日：2013-04-02
申请号：US12713846
申请日：2010-02-26
申请人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
发明人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
IPC分类号： H01L21/00
CPC分类号： H01L51/52 , H01L27/3265 , H01L2227/323
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

2. 发明申请

US20120326157A1 Method of Manufacturing Thin Film Transistor, Thin Film Transistor Manufactured Using the Method, Method of Manufacturing Organic Light-Emitting Display Apparatus, and Organic Light-Emitting Display Apparatus Manufactured Using the Method 有权
标题翻译：使用该方法制造薄膜晶体管的薄膜晶体管的制造方法，制造有机发光显示装置的方法和使用该方法制造的有机发光显示装置
公开(公告)号：US20120326157A1
公开(公告)日：2012-12-27
申请号：US13313555
申请日：2011-12-07
申请人： Byoung-Keon Park , Jong-Ryuk Park , Tak-Young Lee , Jin-Wook Seo , Ki-Yong Lee
发明人： Byoung-Keon Park , Jong-Ryuk Park , Tak-Young Lee , Jin-Wook Seo , Ki-Yong Lee
IPC分类号： H01L29/786 , H01L33/08 , H01L33/16 , H01L21/336
CPC分类号： H01L27/1288 , H01L27/3262 , H01L29/66757
摘要： A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively.
摘要翻译：一种制造TFT的方法，包括在衬底上形成缓冲层，非晶硅层，绝缘层和第一导电层，通过使非晶硅层结晶形成多晶硅层，形成半导体层，栅极绝缘层和通过同时构图多晶硅层，绝缘层和第一导电层而具有预定形状的栅电极，其中进一步蚀刻多晶硅层以产生凹陷距离相比于绝缘层和第一导电层，通过掺杂半导体层的相应部分在半导体层内形成源极和漏极区域，在栅电极上形成层间绝缘层，覆盖栅极绝缘层的层间绝缘层和形成源极和漏极与源极和漏极电连接的电极地区。

3. 发明授权

US08318523B2 Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08318523B2
公开(公告)日：2012-11-27
申请号：US12405466
申请日：2009-03-17
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee
IPC分类号： H01L29/04
CPC分类号： H01L29/78615 , H01L27/1277 , H01L29/4908 , H01L29/66757
摘要： A thin film transistor, a method of fabricating the same, and an OLED display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and having a channel region, source and drain regions, and a body contact region, a gate insulating layer disposed on the semiconductor layer to expose the body contact region, a silicon layer disposed on the gate insulating layer and contacting the body contact region exposed by the gate insulating layer, a gate electrode disposed on the silicon layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected with the source and drain regions, wherein the body contact region is formed in an edge region of the semiconductor layer.
摘要翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的OLED显示装置。薄膜晶体管包括基板，设置在基板上并具有沟道区，源极和漏极区以及体接触区的半导体层，设置在半导体层上以露出本体接触区的栅绝缘层，硅层，设置在栅极绝缘层上并与由栅极绝缘层暴露的体接触区域接触，设置在硅层上的栅极电极，设置在栅电极上的层间绝缘层，以及设置在层间绝缘层上的源电极和漏电极并且与所述源极和漏极区电连接，其中所述体接触区域形成在所述半导体层的边缘区域中。

4. 发明授权

US08253141B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08253141B2
公开(公告)日：2012-08-28
申请号：US12502413
申请日：2009-07-14
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee
IPC分类号： H01L29/76 , H01L29/04 , H01L27/01 , H01L31/036 , H01L31/0376
CPC分类号： H01L29/66757 , H01L21/02672 , H01L27/1277 , H01L29/41733 , H01L29/78645 , H01L29/78696
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT. The TFT includes: a substrate; a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallization-inducing metal, first gettering sites disposed on opposing edges of the semiconductor layer, and a second gettering site spaced apart from the first gettering sites; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions of the semiconductor layer.
摘要翻译：薄膜晶体管（TFT），其制造方法以及具有TFT的有机发光二极管（OLED）显示装置。 TFT包括：基板; 设置在基板上的多晶硅（poly-Si）半导体层，包括源极，漏极和沟道区，结晶诱导金属，设置在半导体层的相对边缘上的第一吸杂位置和与第一个吸气场; 设置在所述半导体层上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与半导体层的源极和漏极区域电连接的源极和漏极。

5. 发明申请

US20120088340A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHTING EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
公开(公告)号：US20120088340A1
公开(公告)日：2012-04-12
申请号：US13333587
申请日：2011-12-21
申请人： Byoung-Keon PARK , Jin-Wook SEO , Tae-Hoon YANG , Kil-Won LEE , Dong-Hyun LEE
发明人： Byoung-Keon PARK , Jin-Wook SEO , Tae-Hoon YANG , Kil-Won LEE , Dong-Hyun LEE
IPC分类号： H01L21/336
CPC分类号： H01L29/78615 , H01L27/1277 , H01L29/66757
摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.
摘要翻译：薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管显示装置。薄膜晶体管包括：基板; 设置在所述基板上的半导体层，包括沟道区，源极/漏极区和主体接触区; 栅极绝缘层，设置在所述半导体层上以暴露所述本体接触区域; 栅电极，设置在所述栅极绝缘层上，以与所述主体接触区域接触; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与源极/漏极区电连接的源极/漏极。体接触区域形成在半导体层的边缘中。

6. 发明申请

US20120000986A1 CANISTER FOR DEPOSITION APPARATUS AND DEPOSITION APPARATUS USING SAME 审中-公开
标题翻译：用于沉积装置和沉积装置的装置
公开(公告)号：US20120000986A1
公开(公告)日：2012-01-05
申请号：US13009279
申请日：2011-01-19
申请人： Min-Jae JEONG , Ki-Yong Lee , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo Soo , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
发明人： Min-Jae JEONG , Ki-Yong Lee , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo Soo , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
IPC分类号： F24D5/00
CPC分类号： C23C16/4481 , C23C16/45525 , C23C16/52
摘要： A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.
摘要翻译：一种用于沉积设备的罐和使用其的沉积设备，更具体地，涉及一种用于沉积设备的罐，其可以提供均匀量的源材料，所述源材料包含在供应到沉积室中的反应气体中，并且提高了供应源材料和使用该罐的沉积装置。沉积设备包括沉积室; 向所述沉积室供应反应气体的罐; 以及载体气体供给器，用于将载气供应到罐中，其中罐包括主体，加热单元加热主体，温度测量单元设置在主体下方。

7. 发明申请

US20110227078A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110227078A1
公开(公告)日：2011-09-22
申请号：US13034818
申请日：2011-02-25
申请人： Byoung-Keon PARK , Jin-Wook Seo , Ki-Yong Lee , Yun-Mo Chung , Jong-Ryuk Park , Tak-Young Lee , Dong-Hyun Lee , Kil-Won Lee , Byung-Soo So , Min-Jae Jeong , Yong-Duck Son , Seung-Kyu Park , Jae-Wan Jung
发明人： Byoung-Keon PARK , Jin-Wook Seo , Ki-Yong Lee , Yun-Mo Chung , Jong-Ryuk Park , Tak-Young Lee , Dong-Hyun Lee , Kil-Won Lee , Byung-Soo So , Min-Jae Jeong , Yong-Duck Son , Seung-Kyu Park , Jae-Wan Jung
IPC分类号： H01L51/56 , H01L51/52
CPC分类号： H01L27/3262 , H01L27/12 , H01L27/1248 , H01L27/3258 , H01L27/326
摘要： A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.
摘要翻译：一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，第一绝缘层包括在第一半导体层和第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。

8. 发明申请

US20110220878A1 Thin film transistor and method of manufacturing the same 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110220878A1
公开(公告)日：2011-09-15
申请号：US12926210
申请日：2010-11-02
申请人： Tak-Young Lee , Byoung-Keon Park , Yun-Mo Chung , Jong-Ryuk Park , Dong-Hyun Lee , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Young-Duck Son , Byung-Soo So , Seung-Kyu Park , Kil-Won Lee , Jae-Wan Jung
发明人： Tak-Young Lee , Byoung-Keon Park , Yun-Mo Chung , Jong-Ryuk Park , Dong-Hyun Lee , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Young-Duck Son , Byung-Soo So , Seung-Kyu Park , Kil-Won Lee , Jae-Wan Jung
IPC分类号： H01L51/00 , H01L29/772 , H01L21/336
CPC分类号： H01L29/78645
摘要： A thin film transistor (TFT) includes a substrate, and an active region on the substrate including source and drain regions at opposing ends of the active region, a lightly doped region adjacent to at least one of the source region and the drain region, a plurality of channel regions, and a highly doped region between two channel regions of the plurality of channel regions. The TFT includes a gate insulation layer on the active region, and a multiple gate electrode having a plurality of gate electrodes on the gate insulation layer, the plurality of channel regions being disposed below corresponding gate electrodes, and the source region and the drain region being disposed adjacent to outermost portions of the multiple gate electrode. The TFT includes a first interlayer insulation layer on the multiple gate electrode, and source and drain electrodes extending through the first interlayer insulation layer and contacting the respective source and drain regions.
摘要翻译：薄膜晶体管（TFT）包括衬底，并且衬底上的有源区域包括在有源区的相对端处的源极和漏极区域，与源区域和漏极区域中的至少一个相邻的轻掺杂区域，多个沟道区，以及多个沟道区的两个沟道区之间的高掺杂区。 TFT包括在有源区上的栅极绝缘层和在栅绝缘层上具有多个栅电极的多栅电极，多个沟道区设置在相应的栅极下方，源区和漏区为邻近多栅电极的最外部设置。 TFT包括在多栅电极上的第一层间绝缘层，以及延伸穿过第一层间绝缘层并与相应的源极和漏极区接触的源极和漏极。

9. 发明授权

US07935586B2 Thin film transistor and method for fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07935586B2
公开(公告)日：2011-05-03
申请号：US12853263
申请日：2010-08-09
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L21/84
CPC分类号： H01L29/78654 , H01L29/66757 , H01L29/66772 , H01L29/78675 , H01L29/78696
摘要： A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin film transistor includes a substrate; a semiconductor layer pattern which is formed on the substrate, the semiconductor layer pattern having a channel layer of which no seed exists and no gram boundary exists; a gate insulating film formed on the semiconductor layer pattern; and a gate electrode formed on the gate insulating film. A method for fabricating the thin film transistor includes forming an amorphous silicon layer on a substrate; forming a semiconductor layer pattern having a channel layer in which no seed exists and no grain boundary exists by crystallizing and patterning the amorphous silicon layer; forming a gate insulating film on the semiconductor layer pattern; and forming a gate electrode on the gate insulating film.
摘要翻译：通过均匀控制结晶催化剂的低浓度和控制结晶位置，使得不存在晶种并且不存在晶界，或者在薄膜晶体管的沟道层中存在一个晶界，开发出具有改善的特性和均匀性的薄膜晶体管。薄膜晶体管包括基板; 形成在所述基板上的半导体层图案，所述半导体层图案具有不存在种子的沟道层，并且不存在晶界; 形成在半导体层图案上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。一种薄膜晶体管的制造方法，包括在基板上形成非晶硅层; 形成具有不存在种子的沟道层的半导体层图案，并且通过对非晶硅层进行结晶和图案化而不存在晶界; 在半导体层图案上形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

10. 发明申请

US20110020990A1 THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110020990A1
公开(公告)日：2011-01-27
申请号：US12853263
申请日：2010-08-09
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L21/336
CPC分类号： H01L29/78654 , H01L29/66757 , H01L29/66772 , H01L29/78675 , H01L29/78696
摘要： A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin film transistor includes a substrate; a semiconductor layer pattern which is formed on the substrate, the semiconductor layer pattern having a channel layer of which no seed exists and no gram boundary exists; a gate insulating film formed on the semiconductor layer pattern; and a gate electrode formed on the gate insulating film. A method for fabricating the thin film transistor includes forming an amorphous silicon layer on a substrate; forming a semiconductor layer pattern having a channel layer in which no seed exists and no grain boundary exists by crystallizing and patterning the amorphous silicon layer; forming a gate insulating film on the semiconductor layer pattern; and forming a gate electrode on the gate insulating film.
摘要翻译：通过均匀控制结晶催化剂的低浓度和控制结晶位置，使得不存在晶种并且不存在晶界，或者在薄膜晶体管的沟道层中存在一个晶界，开发出具有改善的特性和均匀性的薄膜晶体管。薄膜晶体管包括基板; 形成在所述基板上的半导体层图案，所述半导体层图案具有不存在种子的沟道层，并且不存在晶界; 形成在半导体层图案上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。一种薄膜晶体管的制造方法，包括在基板上形成非晶硅层; 形成具有不存在种子的沟道层的半导体层图案，并且通过对非晶硅层进行结晶和图案化而不存在晶界; 在半导体层图案上形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

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