专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08871616B2 Methods of fabricating thin film transistor and organic light emitting diode display device having the same 有权
标题翻译：制造薄膜晶体管的方法和具有该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08871616B2
公开(公告)日：2014-10-28
申请号：US12718169
申请日：2010-03-05
申请人： Ji-Su Ahn , Won-Pil Lee
发明人： Ji-Su Ahn , Won-Pil Lee
IPC分类号： H01L21/20 , H01L29/66 , H01L29/45 , H01L21/02 , H01L29/417 , H01L29/423 , H01L27/12 , H01L27/32
CPC分类号： H01L27/1214 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L27/1281 , H01L27/1285 , H01L27/3262 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/66757
摘要： A thin film transistor (TFT), an OLED device having the TFT and a method of fabricating the same and a method of fabricating an organic light emitting diode (OLED) display device that includes the TFT. The method of fabricating a TFT includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer pattern on the buffer layer, forming a metal layer on an entire surface of the substrate, forming a semiconductor layer by applying an electrical field to the metal layer to crystallize the amorphous silicon layer pattern, forming source and drain electrodes connected to the semiconductor layer by patterning the metal layer, forming a gate insulating layer on the entire surface of the substrate, forming a gate electrode on the gate insulating layer to correspond to the semiconductor layer and forming a protective layer on the entire surface of the substrate.
摘要翻译：薄膜晶体管（TFT），具有TFT的OLED器件及其制造方法以及制造包括TFT的有机发光二极管（OLED）显示器件的方法。制造TFT的方法包括提供衬底，在衬底上形成缓冲层，在缓冲层上形成非晶硅层图案，在衬底的整个表面上形成金属层，通过施加电场地到金属层以结晶非晶硅层图案，通过图案化金属层形成连接到半导体层的源极和漏极，在基板的整个表面上形成栅极绝缘层，在栅极绝缘上形成栅极电极层对应于半导体层并在基板的整个表面上形成保护层。

2. 发明授权

US08405088B2 Thin film transistor and organic light emitting diode display device 有权
标题翻译：薄膜晶体管和有机发光二极管显示装置
公开(公告)号：US08405088B2
公开(公告)日：2013-03-26
申请号：US12659550
申请日：2010-03-12
申请人： Ji-Su Ahn , Hoon-Kee Min
发明人： Ji-Su Ahn , Hoon-Kee Min
IPC分类号： H01L51/50 , H04N5/238
CPC分类号： H01L29/41733 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L27/1281 , H01L27/1285 , H01L27/3262 , H01L29/66757
摘要： A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, source and drain electrodes directly on the semiconductor layer, each of the source and drain electrodes including at least one hole therethrough, a gate insulating layer on the substrate, and a gate electrode on the gate insulating layer and corresponding to the semiconductor layer.
摘要翻译：薄膜晶体管包括衬底，衬底上的缓冲层，缓冲层上的半导体层，直接在半导体层上的源极和漏极，源极和漏极中的每一个包括穿过其中的至少一个孔，栅极绝缘并且栅极绝缘层上的对应于半导体层的栅电极。

3. 发明申请

US20120171823A1 METHOD OF FABRICATING THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管的制作方法
公开(公告)号：US20120171823A1
公开(公告)日：2012-07-05
申请号：US13419757
申请日：2012-03-14
申请人： Ji-Su Ahn , Eui-Hoon Hwang , Cheol-Ho Yu , Kwang-Nam Kim , Sung-Chul Kim
发明人： Ji-Su Ahn , Eui-Hoon Hwang , Cheol-Ho Yu , Kwang-Nam Kim , Sung-Chul Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/78675 , H01L27/1248 , H01L27/1285 , H01L27/3262 , H01L29/66757
摘要： A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.
摘要翻译：一种薄膜晶体管（TFT），包括在基板上的晶体半导体图形，在晶体半导体图案上的栅极绝缘层，栅极绝缘层具有两个第一源极/漏极接触孔和半导体图案访问孔，栅电极在栅极绝缘层上，栅电极位于两个第一源极/漏极接触孔之间，覆盖栅电极的层间绝缘层，其中具有两个第二源极/漏极接触孔的层间绝缘层，以及栅电极上的源极和漏极层间绝缘层，源极和漏极中的每一个与栅电极绝缘，并且具有通过第一和第二源极/漏极接触孔连接到晶体半导体图案的部分。

4. 发明申请

US20110294267A1 METHOD OF FABRICATING THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管的制作方法
公开(公告)号：US20110294267A1
公开(公告)日：2011-12-01
申请号：US13206227
申请日：2011-08-09
申请人： Ji-Su Ahn , Sung-Chul Kim
发明人： Ji-Su Ahn , Sung-Chul Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/02532 , H01L21/02667 , H01L27/124 , H01L27/1281 , H01L27/3262 , H01L29/66757
摘要： A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, an interlayer insulating layer on the entire surface of the substrate having the gate electrode, a first contact hole and a second contact hole, and source and drain electrodes on the interlayer insulating layer, insulated from the gate electrode, and having a portion connected with the semiconductor layer through the first contact hole. An organic light emitting diode display may include the thin film transistor along with a passivation layer on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode, which are on the passivation layer and electrically connected with the source and drain electrodes.
摘要翻译：薄膜晶体管包括衬底，衬底上的缓冲层，缓冲层上的半导体层，半导体层上的栅极绝缘层，栅极绝缘层上的栅极电极，整个表面上的层间绝缘层具有栅电极的基板，第一接触孔和第二接触孔，以及与栅电极绝缘的层间绝缘层上的源电极和漏电极，并且具有通过第一接触孔与半导体层连接的部分。有机发光二极管显示器可以包括薄膜晶体管以及在基板的整个表面上的钝化层，以及第一电极，有机层和第二电极，它们位于钝化层上并与源极和漏极。

5. 发明申请

US20110139767A1 AMRPHOUS SILICON CRYSTALLIZATION APPARATUS 审中-公开
标题翻译：无机硅结晶装置
公开(公告)号：US20110139767A1
公开(公告)日：2011-06-16
申请号：US12898195
申请日：2010-10-05
申请人： Beong-Ju KIM , Ji-Su AHN , Cheol-Ho YU
发明人： Beong-Ju KIM , Ji-Su AHN , Cheol-Ho YU
IPC分类号： H05B3/06 , H05B3/22
CPC分类号： H01L21/02532 , H01L21/02667 , H01L21/67259 , H01L21/68 , H01L21/6838
摘要： Provided is an amorphous silicon (a-Si) crystallization apparatus for crystallizing a-Si into polysilicon (poly-Si), and more particularly, to an a-Si crystallization apparatus for crystallizing a-Si into poly-Si by applying a certain power voltage to a conductive thin film disposed on a substrate including an a-Si layer to generate joule heat, wherein the a-Si formed on the substrate can be crystallized using the same equipment regardless of the size of the substrate. The a-Si crystallization apparatus includes a process chamber, a substrate holder disposed at a lower part of the process chamber, a power voltage application part disposed at an upper part of the process chamber and including a first electrode and a second electrode having a polarity different from the first electrode, and a controller for adjusting a distance between the first and second electrode.
摘要翻译：提供了一种用于将a-Si结晶成多晶硅（poly-Si）的非晶硅（a-Si）结晶装置，更具体地说，涉及通过施加一定的功率将a-Si结晶成多晶硅的a-Si结晶装置电压设置在包括a-Si层的基板上的导电薄膜以产生焦耳热，其中形成在基板上的a-Si可以使用相同的设备结晶，而与基板的尺寸无关。 a-Si结晶装置包括处理室，设置在处理室的下部的基板保持件，设置在处理室的上部的电源施加部，包括第一电极和具有极性的第二电极与第一电极不同，以及用于调节第一和第二电极之间的距离的控制器。

6. 发明申请

US20110037074A1 Thin film transistor method of fabricating the same, and organic light emitting diode dislplay device having the same 有权
标题翻译：薄膜晶体管的制造方法以及具有该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US20110037074A1
公开(公告)日：2011-02-17
申请号：US12659550
申请日：2010-03-12
申请人： Ji-Su Ahn , Hoon-Kee Min
发明人： Ji-Su Ahn , Hoon-Kee Min
IPC分类号： H01L51/52 , H01L29/786 , H01L21/336 , H01L51/56 , H01L33/00
CPC分类号： H01L29/41733 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L27/1281 , H01L27/1285 , H01L27/3262 , H01L29/66757
摘要： A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, source and drain electrodes directly on the semiconductor layer, each of the source and drain electrodes including at least one hole therethrough, a gate insulating layer on the substrate, and a gate electrode on the gate insulating layer and corresponding to the semiconductor layer.
摘要翻译：薄膜晶体管包括衬底，衬底上的缓冲层，缓冲层上的半导体层，直接在半导体层上的源极和漏极，源极和漏极中的每一个包括穿过其中的至少一个孔，栅极绝缘并且栅极绝缘层上的对应于半导体层的栅电极。

7. 发明申请

US20100224883A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
公开(公告)号：US20100224883A1
公开(公告)日：2010-09-09
申请号：US12714201
申请日：2010-02-26
申请人： Byoung-Keon PARK , Tae-Hoo Yang , Jin-Wook Seo , Ki-Yong Lee , Maxim Lisachenko , Bo-Kyung Choi , Dae-Woo Lee , Kil-Won Lee , Dong-Hyun Lee , Jong-Ryuk Park , Ji-Su Ahn , Yong-Dae Kim , Heung-Yeol Na , Min-Jae Jeong , Yun-Mo Chung , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Jae-Wan Jung , Sang-Yon Yoon
发明人： Byoung-Keon PARK , Tae-Hoo Yang , Jin-Wook Seo , Ki-Yong Lee , Maxim Lisachenko , Bo-Kyung Choi , Dae-Woo Lee , Kil-Won Lee , Dong-Hyun Lee , Jong-Ryuk Park , Ji-Su Ahn , Yong-Dae Kim , Heung-Yeol Na , Min-Jae Jeong , Yun-Mo Chung , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Jae-Wan Jung , Sang-Yon Yoon
IPC分类号： H01L33/16 , H01L29/786 , H01L21/336 , H01L21/20
CPC分类号： H01L29/6675 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.
摘要翻译：薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层，以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。

8. 发明申请

US20100163856A1 METHOD OF FABRICATING POLYSILICON, THIN FILM TRANSISTOR, METHOD OF FABRICATING THE THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR 有权
标题翻译：制造多晶硅，薄膜晶体管的方法，制造薄膜晶体管的方法和包括薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US20100163856A1
公开(公告)日：2010-07-01
申请号：US12650078
申请日：2009-12-30
申请人： Byoung-Keon PARK , Dong-Hyun Lee , Kil-Won Lee , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Ji-Su Ahn , Maxim Lisachenko
发明人： Byoung-Keon PARK , Dong-Hyun Lee , Kil-Won Lee , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Ji-Su Ahn , Maxim Lisachenko
IPC分类号： H01L51/50 , H01L29/786 , H01L21/336 , H01L33/00
CPC分类号： H01L21/02672 , H01L21/02488 , H01L21/02532 , H01L27/1277 , H01L27/1281 , H01L29/66757 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.
摘要翻译：一种薄膜晶体管，一种制造该薄膜晶体管的方法和一种包括该薄膜晶体管的有机发光二极管（OLED）显示装置，该薄膜晶体管包括：一基板; 形成在所述基板上的缓冲层; 设置在缓冲层上的第一半导体层; 设置在所述第一半导体层上的比所述第一半导体层大的第二半导体层; 与第一半导体层和第二半导体层绝缘的栅电极; 栅极绝缘层，用于使栅电极与第一半导体层和第二半导体层绝缘; 源极和漏极与栅电极绝缘并连接到第二半导体层; 设置在源极和漏极上的绝缘层和连接到源极和漏极之一的有机发光二极管。

9. 发明申请

US20100109013A1 Thin film transistor, method of manufacturing the same, and organic light emitting diode display device including the same 审中-公开
标题翻译：薄膜晶体管及其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US20100109013A1
公开(公告)日：2010-05-06
申请号：US12588973
申请日：2009-11-04
申请人： Ji-Su Ahn , Sung-Chul Kim , Beong-Ju Kim
发明人： Ji-Su Ahn , Sung-Chul Kim , Beong-Ju Kim
IPC分类号： H01L29/786 , H01L21/336 , H01L33/00
CPC分类号： H01L27/1285
摘要： A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.
摘要翻译：一种用于有机发光二极管的薄膜晶体管包括：包括像素部分和互连部分的衬底，衬底上的缓冲层，缓冲层上的栅电极和栅极互连，其中栅电极位于像素并且栅极互连位于互连部分，衬底上的栅极绝缘层，栅电极上的半导体层，电连接到半导体层的源极和漏极以及栅极互连上的金属图案。

10. 发明授权

US08343796B2 Method of fabricating thin film transistor by crystallization through metal layer forming source and drain electrodes 有权
标题翻译：通过金属层形成源极和漏极结晶化制造薄膜晶体管的方法
公开(公告)号：US08343796B2
公开(公告)日：2013-01-01
申请号：US13206227
申请日：2011-08-09
申请人： Ji-Su Ahn , Sung-Chul Kim
发明人： Ji-Su Ahn , Sung-Chul Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/02532 , H01L21/02667 , H01L27/124 , H01L27/1281 , H01L27/3262 , H01L29/66757
摘要： A method of fabricating a thin film transistor includes patterning the amorphous semiconductor layer to form an amorphous semiconductor layer pattern, forming a gate electrode corresponding to the amorphous semiconductor layer pattern on a gate insulating layer, forming an interlayer insulating layer on the entire surface of the substrate, forming a first contact hole partially exposing the amorphous semiconductor layer pattern, forming a second contact hole partially exposing the gate electrode, and forming a metal layer on the entire surface of the substrate. The method also includes applying an electrical field to the metal layer such that a semiconductor layer is formed by crystallization of the amorphous semiconductor layer pattern, and patterning the metal layer to form source and drain electrodes that are insulated from the gate electrode and that are electrically connected with the semiconductor layer through the first contact hole.
摘要翻译：一种制造薄膜晶体管的方法，包括图案化非晶半导体层以形成非晶半导体层图案，在栅绝缘层上形成对应于非晶半导体层图案的栅电极，在该绝缘层的整个表面上形成层间绝缘层形成部分暴露非晶半导体层图案的第一接触孔，形成部分暴露栅电极的第二接触孔，以及在基板的整个表面上形成金属层。该方法还包括向金属层施加电场，使得通过非晶半导体层图案的结晶形成半导体层，并且图案化金属层以形成与栅电极绝缘的电极和漏电极，并且是电通过第一接触孔与半导体层连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式