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1. 发明授权

US08890165B2 Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same 有权
标题翻译：形成多晶硅层的方法，薄膜晶体管，具有该多晶硅层的有机发光二极管显示装置及其制造方法
公开(公告)号：US08890165B2
公开(公告)日：2014-11-18
申请号：US12714154
申请日：2010-02-26
申请人： Dong-Hyun Lee , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Maxim Lisachenko , Byoung-Keon Park , Kil-Won Lee , Jae-Wan Jung
发明人： Dong-Hyun Lee , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Maxim Lisachenko , Byoung-Keon Park , Kil-Won Lee , Jae-Wan Jung
IPC分类号： H01L29/04 , H01L27/12 , H01L29/786 , H01L21/02 , H01L29/66
CPC分类号： H01L29/78675 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78696
摘要： A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.
摘要翻译：一种形成多晶硅层的方法，薄膜晶体管（TFT），具有该多晶硅层的有机发光二极管（OLED）显示器件及其制造方法。形成多晶硅层的方法包括提供衬底，在衬底上形成缓冲层，在缓冲层上形成非晶硅层，在非晶硅层中形成沟槽，在非晶硅层上形成覆盖层，在所述覆盖层上形成金属催化剂层，对所述基板退火并将所述非晶硅层析出为多晶硅层。

2. 发明授权

US08592832B2 Organic light emission diode display device and method of fabricating the same 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US08592832B2
公开(公告)日：2013-11-26
申请号：US12635964
申请日：2009-12-11
申请人： Tae-Hoon Yang , Han-Hee Yoon , Kil-Won Lee , Jang-Soon Im , Ji-Yong Noh
发明人： Tae-Hoon Yang , Han-Hee Yoon , Kil-Won Lee , Jang-Soon Im , Ji-Yong Noh
IPC分类号： H01L29/18 , H01L29/10
CPC分类号： H01L27/3244 , H01L27/1218 , H01L27/3258 , H01L27/3262
摘要： An organic light emission diode (OLED) display device and a method of fabricating the same, wherein the OLED display device includes a substrate including a pixel region and a non-pixel region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, and including a channel region and source/drain regions, a gate electrode disposed to correspond to the channel region of the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, source/drain electrodes electrically connected to the source/drain regions of the semiconductor layer, and an interlayer insulating layer insulating the gate electrode from the source/drain electrodes, wherein areas of the buffer layer, the gate insulating layer and the interlayer insulating layer that are on the non-pixel region, respectively, are removed, and the partially removed area is 8% to 40% of a panel area.
摘要翻译：一种有机发光二极管（OLED）显示装置及其制造方法，其中所述OLED显示装置包括：包括像素区域和非像素区域的衬底;设置在所述衬底上的缓冲层;设置在所述衬底上的半导体层; 缓冲层，并且包括沟道区域和源极/漏极区域，设置成对应于半导体层的沟道区域的栅极电极，将半导体层与栅电极绝缘的栅极绝缘层，电连接到半导体层的源极/漏极区域以及使栅电极与源极/漏极绝缘的层间绝缘层，其中位于非像素区域上的缓冲层，栅极绝缘层和层间绝缘层的区域，并且部分去除区域是面板面积的8％至40％。

3. 发明授权

US08580677B2 Method of manufacturing substrate including thin film transistor 有权
标题翻译：制造包括薄膜晶体管的衬底的方法
公开(公告)号：US08580677B2
公开(公告)日：2013-11-12
申请号：US13739866
申请日：2013-01-11
申请人： Yun-Mo Chung , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Tak-Young Lee , Jong-Ryuk Park , Jae-Wan Jung
发明人： Yun-Mo Chung , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Tak-Young Lee , Jong-Ryuk Park , Jae-Wan Jung
IPC分类号： H01L21/4763
CPC分类号： H01L29/66742 , H01L27/124 , H01L27/1248 , H01L27/3262 , H01L27/3274 , H01L29/66757 , H01L29/78618 , H01L51/0081
摘要： A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.
摘要翻译：一种包括薄膜晶体管的基板，所述基板包括设置在所述基板上的有源层，所述有源层包括沟道区域和源极和漏极区域，设置在所述有源层上的栅极电极，对应于所述栅电极的沟道区域，插入在有源层和栅电极之间的栅极绝缘层，设置成覆盖有源层和栅电极的层间绝缘层，具有部分地暴露有源层的第一和第二接触孔的层间绝缘层，设置的源极和漏极在层间绝缘层上，对应于源极和漏极以及欧姆接触层的源极和漏极区域，欧姆接触层介于层间绝缘层和源极和漏极之间，并且使源极和漏极区域通过第一和第二接触孔。

4. 发明授权

US08436360B2 Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same 有权
标题翻译：薄膜晶体管及其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08436360B2
公开(公告)日：2013-05-07
申请号：US13333587
申请日：2011-12-21
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee
IPC分类号： H01L29/04
CPC分类号： H01L29/78615 , H01L27/1277 , H01L29/66757
摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.
摘要翻译：薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管显示装置。薄膜晶体管包括：基板; 设置在所述基板上的半导体层，包括沟道区，源极/漏极区和主体接触区; 栅极绝缘层，设置在所述半导体层上以暴露所述本体接触区域; 栅电极，设置在所述栅极绝缘层上，以与所述主体接触区域接触; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与源极/漏极区电连接的源极/漏极。体接触区域形成在半导体层的边缘中。

5. 发明授权

US08334536B2 Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same 有权
标题翻译：薄膜晶体管，具有相同的有机发光二极管显示装置，平板显示装置和半导体装置及其制造方法
公开(公告)号：US08334536B2
公开(公告)日：2012-12-18
申请号：US12048662
申请日：2008-03-14
申请人： Kyoung-Bo Kim , Kil-Won Lee , Jin-Wook Seo , Ki-Yong Lee , Moo-Jin Kim
发明人： Kyoung-Bo Kim , Kil-Won Lee , Jin-Wook Seo , Ki-Yong Lee , Moo-Jin Kim
IPC分类号： H01L29/04
CPC分类号： H01L29/78675 , H01L27/1229 , H01L27/1277 , H01L27/1285 , H01L27/3262 , H01L29/66757
摘要： A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method.
摘要翻译：薄膜晶体管及其制造方法包括：具有通过薄射束定向结晶法形成的具有15nm以下的顶面的高度变化的晶体生长方向的晶界的半导体层。此外，提供了包括薄膜晶体管的有机发光二极管（OLED）显示装置，并且具有通过简单的工艺制造的优异特性。此外，提供了一种平板显示装置及其制造方法，包括：像素区域中的多晶硅层; 以及通过薄束定向结晶法形成的周边区域中的多晶硅层。此外，半导体器件及其制造方法包括：通过薄射束定向结晶法形成的光电二极管区域中的半导体层的本征区域。

6. 发明授权

US08101952B2 Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same 有权
标题翻译：薄膜晶体管及其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08101952B2
公开(公告)日：2012-01-24
申请号：US12409085
申请日：2009-03-23
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee
IPC分类号： H01L29/04
CPC分类号： H01L29/78615 , H01L27/1277 , H01L29/66757
摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.
摘要翻译：薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管显示装置。薄膜晶体管包括：基板; 设置在所述基板上的半导体层，包括沟道区，源极/漏极区和主体接触区; 栅极绝缘层，设置在所述半导体层上以暴露所述本体接触区域; 栅电极，设置在所述栅极绝缘层上，以与所述主体接触区域接触; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与源极/漏极区电连接的源极/漏极。体接触区域形成在半导体层的边缘中。

7. 发明申请

US20110300674A1 Method of crystallizing silicon layer and method of forming a thin film transistor using the same 有权
标题翻译：使硅层结晶的方法和使用其形成薄膜晶体管的方法
公开(公告)号：US20110300674A1
公开(公告)日：2011-12-08
申请号：US13067384
申请日：2011-05-27
申请人： Yun-Mo Chung , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Tak-Young Lee , Jong-Ryuk Park
发明人： Yun-Mo Chung , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Tak-Young Lee , Jong-Ryuk Park
IPC分类号： H01L21/30 , H01L21/336
CPC分类号： H01L21/02672 , H01L21/02532 , H01L27/1277
摘要： A method of crystallizing a silicon layer and a method of manufacturing a thin film transistor using the same, the method of crystallizing the silicon layer including forming an amorphous silicon layer on a substrate; performing a hydrophobicity treatment on a surface of the amorphous silicon layer so as to obtain a hydrophobic surface thereon; forming a metallic catalyst on the amorphous silicon layer that has been subjected to the hydrophobicity treatment; and heat-treating the amorphous silicon layer including the metallic catalyst thereon to crystallize the amorphous silicon layer into a polycrystalline silicon layer.
摘要翻译：一种使硅层结晶的方法和使用其制造薄膜晶体管的方法，包括在衬底上形成非晶硅层的硅层结晶的方法; 对非晶硅层的表面进行疏水处理，以在其上获得疏水性表面; 在已经进行了疏水处理的非晶硅层上形成金属催化剂; 对包含金属催化剂的非晶硅层进行热处理，使非晶硅层析出为多晶硅层。

8. 发明申请

US20110100973A1 APPARATUS FOR THERMALLY PROCESSING SUBSTRATE 有权
标题翻译：用于热处理基板的装置
公开(公告)号：US20110100973A1
公开(公告)日：2011-05-05
申请号：US12713982
申请日：2010-02-26
申请人： Heung-Yeol NA , Min-Jae Jeong , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo So , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
发明人： Heung-Yeol NA , Min-Jae Jeong , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo So , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
IPC分类号： F27D11/02
CPC分类号： F27B17/0025 , H01L21/67109
摘要： An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.
摘要翻译：一种用于热加工多个基板的装置，包括处理室，其中堆叠有多个基板的船只装载在该处理室中;以及加热器室，与处理室分离并具有多个加热器以向处理室施加热量。这里，加热器安装成对应于多个基板的所有侧面。因此，可以使处理室中的温度分布最小化并且均匀地向多个基板的整个区域供给热量。

9. 发明申请

US20110014755A1 METHOD OF FABRICATING POLYCRYSTALLINE SILICON, TFT FABRICATED USING THE SAME, METHOD OF FABRICATING THE TFT, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE TFT 有权
标题翻译：制造多晶硅的方法，使用其制造的TFT，制造TFT的方法和包括TFT的有机发光二极管显示装置
公开(公告)号：US20110014755A1
公开(公告)日：2011-01-20
申请号：US12891379
申请日：2010-09-27
申请人： Tae-Hoon YANG , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park , Kil-Won Lee
发明人： Tae-Hoon YANG , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park , Kil-Won Lee
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/4908 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02694 , H01L27/1277 , H01L29/78654
摘要： A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50 Å on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process.
摘要翻译：一种制造多晶硅（poly-Si）层的方法包括提供衬底，在衬底上形成非晶硅（a-Si）层，形成厚度约为10〜 Si层，在所述热氧化物层上形成金属催化剂层，并且使所述基板退火以使用所述金属催化剂层的金属催化剂将所述a-Si层结晶成多晶硅层。因此，可以通过超晶硅（SGS）结晶法将a-Si层结晶成多晶硅层。此外，可以在a-Si层的脱氢过程中形成热氧化物层，从而可以省略形成SGS结晶方法所需的另外的形成覆盖层的工艺，从而简化了制造工艺。

10. 发明申请

US20100224881A1 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US20100224881A1
公开(公告)日：2010-09-09
申请号：US12713846
申请日：2010-02-26
申请人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
发明人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
IPC分类号： H01L33/16 , H01L21/336 , H01L21/02
CPC分类号： H01L51/52 , H01L27/3265 , H01L2227/323
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.
摘要翻译：提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极，设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。所得的电容器具有增加的表面积，因此增加电容。

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