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1. 发明授权

US4378417A Electrophotographic member with .alpha.-Si layers 失效
标题翻译：具有α-Si层的电子照相元件
公开(公告)号：US4378417A
公开(公告)日：1983-03-29
申请号：US254294
申请日：1981-04-15
申请人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
发明人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
IPC分类号： G03G5/08 , G03G5/082 , H01L21/205 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/08221
摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.
摘要翻译：在采用非晶硅光电导层的电子照相构件中，从非晶硅层的表面（或界面）向内至少10nm厚的非晶硅层的部分由非晶硅制成，该非晶硅具有光学禁带隙至少1.6eV，电阻率至少为1010欧米加。电子照相成像显示出令人满意的分辨率和良好的暗衰变特性。此外，具有窄于形成表面（或界面）区域的非晶硅的光学禁止带隙的区域设置在至少10nm的厚度的非晶硅层内，由此将电子照相构件的灵敏度设置为可以增加更长波长的光。

2. 再颁专利

USRE33094E Electrophotographic member with alpha-si layers 失效
标题翻译：具有α-si层的电子照相元件
公开(公告)号：USRE33094E
公开(公告)日：1989-10-17
申请号：US162312
申请日：1986-09-11
申请人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
发明人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
IPC分类号： G03G5/08 , G03G5/082 , H01L21/205 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/08221
摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

3. 发明授权

US4377628A Electrophotographic member with .alpha.-Si and H 失效
标题翻译：具有α-Si和H的电子照相元件
公开(公告)号：US4377628A
公开(公告)日：1983-03-22
申请号：US257346
申请日：1981-04-24
申请人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
发明人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
IPC分类号： G03G5/08 , G03F7/20 , G03G5/082 , H01L31/08 , G03G5/14
CPC分类号： G03F7/70216 , G03F7/707 , G03G5/08221 , G03G5/08235
摘要： Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm. By forming the region of the narrower optical forbidden band gap within the photoconductive layer in this manner, the sensitivity of the photoconductive layer to light of longer wavelengths can be enhanced.
摘要翻译：公开了具有非晶硅光电导层的电子照相构件，其中照射光电导体的光被吸收到其中的部分之间的距离，直到其强度降低到其入射时的1％，并且光电导体的与光入射相反的界面一侧为5μm以下，能够降低光电导层的残留电位。构成电子照相构件的光电导元件的从其表面向内存储电荷的至少10nm厚的电子照相构件的部分由非晶硅制成，其具有至少1.6eV的光学禁带宽和电阻率至少1010 OMEGA xcm。此外，在这种光导电层内，具有比形成表面部分的非晶硅的光学禁带宽小的非晶硅区域设置在至少10nm的厚度。通过以这种方式在光导电层内形成较窄的光学禁带区域，可以提高光电导层对较长波长的光的灵敏度。

4. 发明授权

US4365013A Electrophotographic member 失效
标题翻译：电子照相成份
公开(公告)号：US4365013A
公开(公告)日：1982-12-21
申请号：US287633
申请日：1981-07-28
申请人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
发明人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
IPC分类号： G03G5/08 , C23C14/14 , C23C14/35 , G03G5/082 , G03G5/14 , G03G5/147 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/144 , G03G5/14704
摘要： Disclosed is an electrophotographic member having at least a supporter and a photoconductor layer formed mainly of amorphous silicon, characterized in that the amorphous silicon contains at least 50 atomic-% of silicon and at least 1 atomic-% of hydrogen as an average within the layer, and that a part which is at least 10 nm thick from a surface or/and interface of the photoconductor layer toward the interior of the photoconductor layer has a hydrogen content in a range of at least 1 atomic-% to at most 40 atomic-% and an optical forbidden band gap in a range of at least 1.3 eV to at most 2.5 eV and also has the property that an intensity of at least one of peaks having centers at wave numbers of approximately 2,200 cm.sup.-1, approximately 1,140 cm.sup.-1, approximately 1,040 cm.sup.-1, approximately 650 cm.sup.-1, approximately 860 cm.sup.-1 and approximately 800 cm.sup.-1 in an infrared absorption spectrum as are attributed to a bond between silicon and oxygen does not exceed 20% of a higher one of intensities of peaks having centers at wave numbers of approximately 2,000 cm.sup.-1 and approximately 2,100 cm.sup.-1 as are attributed to a bond between silicon and hydrogen. Dark decay characteristics are good, and a satisfactory surface potential can be secured. In addition, the characteristics are stable versus time.
摘要翻译：公开了一种具有至少一种支撑体和主要由非晶硅形成的感光体层的电子照相构件，其特征在于，所述无定形硅含有至少50原子％的硅和至少1原子％的氢在该层内的平均值并且从光电导体层的表面或/和界面朝向光电导体层的内部至少10nm厚的部分具有至少1原子％至至多40原子级的范围内的氢含量，至少1.3eV至至多2.5eV的范围内的光学禁带宽度，并且还具有以波数约2,200cm-1为中心的至少一个峰的强度，约为1140cm- 在归因于硅和氧之间的键的红外吸收光谱中，约1,040cm -1，约650cm -1，约650cm -1，约860cm -1和约800cm -1不超过硅和氧之间的键的20％强度o f峰由于硅和氢之间的键而归因于波数约2,000cm -1和约2,100cm -1的中心。暗衰变特性良好，可以确保令人满意的表面电位。此外，特性与时间相比是稳定的。

5. 发明授权

US4314014A Electrophotographic plate and process for preparation thereof 失效
标题翻译：电子照相板及其制备方法
公开(公告)号：US4314014A
公开(公告)日：1982-02-02
申请号：US158369
申请日：1980-06-11
申请人： Hideaki Yamamoto , Akio Taniguchi , Shinkichi Horigome , Susumu Saito , Yoshiaki Mori , Eiichi Maruyama
发明人： Hideaki Yamamoto , Akio Taniguchi , Shinkichi Horigome , Susumu Saito , Yoshiaki Mori , Eiichi Maruyama
IPC分类号： G03G5/043 , G03G5/08 , G03G5/082
CPC分类号： G03G5/0436 , G03G5/0433
摘要： Disclosed is an electrophotographic plate having a laminated structure comprising a first Se layer containing 3 to 10% by weight of As, a second Se layer containing 40 to 47% by weight of Te and 3 to 10% by weight of As and a fourth Se layer consisting solely of Se or comprising Se and up to 10% by weight of As or an organic semiconductor layer, wherein a substrate is arranged so that at least the face of the substrate which is contiguous to the face of one of said first Se layer and said fourth Se layer or organic semiconductor layer, that is located on the outer side of the laminated structure, is electrically conductive.It is preferred that the fourth Se layer be formed by vacuum evaporation deposition while maintaining the substrate temperature at 50.degree. to 80.degree. C. The residual potential of the electrophotographic plate can be reduced.
摘要翻译：公开了一种具有叠层结构的电子照相板，其包括含有3至10重量％的As的第一Se层，包含40至47重量％的Te和3至10重量％的As的第二Se层和第四Se 由Se组成或包含Se和至多10重量％的As或有机半导体层的层，其中衬底被布置成使得至少衬底的与所述第一Se层之一的表面相邻的面并且位于层叠结构的外侧的所述第四Se层或有机半导体层是导电的。优选地，通过真空蒸发沉积形成第四Se层，同时将衬底温度保持在50℃至80℃。可以减小电子照相板的残留电位。

6. 发明授权

US5126180A Optical recording medium and method of manufacturing the same 失效
标题翻译：光学记录介质及其制造方法
公开(公告)号：US5126180A
公开(公告)日：1992-06-30
申请号：US579899
申请日：1990-09-10
申请人： Akira Gotoh , Shuhei Nakamichi , Shinkichi Horigome , Tetsuya Nishida
发明人： Akira Gotoh , Shuhei Nakamichi , Shinkichi Horigome , Tetsuya Nishida
IPC分类号： G11B7/24 , G11B7/256 , G11B7/26
CPC分类号： G11B7/26 , Y10S428/913 , Y10S430/146 , Y10T428/31504
摘要： Disclosed are optical recording media having interposed an organic compound between a metal stamper and a transparent substrate and forming a replica onto which a signal surface formed on the metal stamper is transferrable to the transparent substrate.

7. 发明授权

US4835027A Optical disc 失效
标题翻译：光盘
公开(公告)号：US4835027A
公开(公告)日：1989-05-30
申请号：US30687
申请日：1987-03-27
申请人： Ryoichi Sudo , Hiroaki Miwa , Tetsuo Tajima , Shinkichi Horigome
发明人： Ryoichi Sudo , Hiroaki Miwa , Tetsuo Tajima , Shinkichi Horigome
IPC分类号： C08F20/30 , G11B7/253
CPC分类号： G11B7/253 , C08F20/30 , Y10S428/913 , Y10S430/146
摘要： An optical disc wherein a transparent base plate is made from a special light-curable resin composition comprising at least one compound of the formula: ##STR1## wherein R.sub.1 =H or methyl and n=0-5, and a photopolymerization initiator, is excellent in heat resistance, mechanical strength, moisture resistance, etc.
摘要翻译：一种光盘，其中透明基板由特殊的光固化树脂组合物制成，所述光固化树脂组合物包含至少一种下式的化合物：其中R1 = H或甲基，n = 0-5，光聚合引发剂是优异的耐热性，机械强度，耐湿性等

8. 发明授权

US4407880A Substrate of member for recording information with light and method of manufacturing the same 失效
标题翻译：用于记录信息的成员的基板和制造方法
公开(公告)号：US4407880A
公开(公告)日：1983-10-04
申请号：US204780
申请日：1980-11-07
申请人： Motoyasu Terao , Shinkichi Horigome , Kazuo Shigematsu , Yoshinori Miyamura , Seiji Yonezawa
发明人： Motoyasu Terao , Shinkichi Horigome , Kazuo Shigematsu , Yoshinori Miyamura , Seiji Yonezawa
IPC分类号： G03C1/705 , G11B7/241 , G11B11/00 , G11B23/00 , B32B5/00
CPC分类号： G11B23/0057 , G03C1/705 , G11B11/00 , G11B7/241 , G11B2007/24314 , G11B2007/24316 , G11B7/252 , G11B7/2531 , G11B7/2533 , G11B7/256 , Y10T428/24479 , Y10T428/24967 , Y10T428/31518 , Y10T428/31522 , Y10T428/31645 , Y10T428/31649 , Y10T428/31884 , Y10T428/31971
摘要： A substrate of a recording member comprising a hard base, a first organic substance layer which is formed on the base, and a second organic substance layer which is made of a solvent-soluble organic substance and which is formed on a surface of the first organic substance layer opposite to a surface thereof lying in contact with the base. This substrate can be reused.
摘要翻译：记录部件的基板包括硬质基体，形成在基材上的第一有机物质层和由溶剂可溶性有机物质构成的第二有机物质层，该第二有机物质层形成在第一有机物的表面上物质层与其与基底接触的表面相对。该基材可以重复使用。

9. 发明授权

US5338178A Embossing metal hold 失效
标题翻译：压花金属扣
公开(公告)号：US5338178A
公开(公告)日：1994-08-16
申请号：US800455
申请日：1991-11-27
申请人： Keizo Kato , Shinkichi Horigome , Ryo Suzuki , Masaru Ito
发明人： Keizo Kato , Shinkichi Horigome , Ryo Suzuki , Masaru Ito
IPC分类号： B29D17/00 , G11B7/26 , B29C59/00
CPC分类号： B29D17/005 , G11B7/26 , Y10S425/81
摘要： According to the present invention, etching is used to form a concave and convex pattern corresponding to information on an embossing metal mold comprising a conductive layer and a layer which includes an Ni electric-plating layer, or an Ni electric-plating layer, so that the surface of the embossing metal mold will not be contaminated even if processing conditions are somewhat changed, and that the mold will have less defects. Thus, optical disk substrates of high quality can be produced. Besides, time required for manufacturing a stamper can be shortened.
摘要翻译：根据本发明，使用蚀刻来形成对应于包括导电层的压花金属模具和包括Ni电镀层或Ni电镀层的层的信息的凹凸图案，使得即使处理条件有些变化，压花金属模具的表面也不会被污染，并且模具将具有较少的缺陷。因此，可以制造高质量的光盘基板。此外，可以缩短制造压模所需的时间。

10. 发明授权

US5314734A Information-recording medium 失效
标题翻译：信息记录介质
公开(公告)号：US5314734A
公开(公告)日：1994-05-24
申请号：US15854
申请日：1993-02-10
申请人： Tetsuya Nishida , Shinkichi Horigome
发明人： Tetsuya Nishida , Shinkichi Horigome
IPC分类号： B41M5/26 , C23C14/06 , G11B7/243 , G11B7/258 , B32B3/02
CPC分类号： C23C14/0623 , G11B7/243 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , Y10S428/913 , Y10S430/146
摘要： An information recording medium which is superior in record/read-out characteristics, high in sensitivity and good in stability can be provided at a low cost by using, as an information-recording medium in which recording is carried out due to change in atomic arrangement upon irradiation with a laser beam, an information-recording medium comprising substrates 1, 1' , recording layers 2, 2' changing in atomic arrangement upon irradiation with a recording energy beam, and reflective layers which are provided contiguous to the recording layers and the recording layer has an average composition represented by A.sub.w D.sub.x Sb.sub.y Se.sub.z (wherein w, x, y and z are in the ranges of 0.ltoreq.w.ltoreq.30, 3.ltoreq.x.ltoreq.57, 3.ltoreq.y.ltoreq.57 and 40.ltoreq.z.ltoreq.90 in atomic percent, D represents at least one element of Sn, In, Ge, Pb, Si, Bi, Ga, Au, Ag and Cu and A represents an element other than Sb, Se, the elements represented by D and rare gases).
摘要翻译：通过使用由于原子排列的变化而进行记录的信息记录介质，可以以低成本提供记录/读出特性优异，灵敏度高，稳定性好的信息记录介质在用激光束照射的情况下，包括基板1,1'的信息记录介质，在记录能量束照射时以原子排列改变的记录层2,2'和与记录层邻接设置的反射层，记录层具有由AwDxSbySez表示的平均组成（其中w，x，y和z在0≤w≤30,3≤x≤5.5，3≤y≤3.0的范围内， = 57和40原子百分比，D表示Sn，In，Ge，Pb，Si，Bi，Ga，Au，Ag和Cu中的至少一种元素，A表示Sb以外的元素，Se，由D表示的元素和稀有气体）。

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