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81. 发明授权

US07347006B2 Processing apparatus and method for removing particles therefrom 有权
标题翻译：用于从中除去颗粒的处理装置和方法
公开(公告)号：US07347006B2
公开(公告)日：2008-03-25
申请号：US11065359
申请日：2005-02-25
申请人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama , Kikuo Okuyama , Manabu Shimada
发明人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama , Kikuo Okuyama , Manabu Shimada
IPC分类号： F26B5/04
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/0225
摘要： A processing apparatus includes a first detection unit for detecting a temperature of an inner wall of the vacuum vessel, a second detection unit for detecting a temperature of the processing unit, and a first control unit for controlling a temperature of the gas. The first control unit controls the temperature of the gas based on a temperature gradient between the temperatures of the inner wall and the gas or a temperature gradient between the temperatures of the processing unit and the gas. A method for removing particles from a processing apparatus includes a first detection step for detecting a temperature of an inner wall of the vacuum vessel, a second detection step for detecting a temperature of the processing unit, a first control step for controlling a temperature of the gas, and a gas introduction step for introducing the gas into the inner space of the vacuum vessel.
摘要翻译：处理装置包括用于检测真空容器的内壁的温度的第一检测单元，用于检测处理单元的温度的第二检测单元和用于控制气体的温度的第一控制单元。第一控制单元基于内壁和气体的温度之间的温度梯度或处理单元和气体的温度之间的温度梯度来控制气体的温度。从处理装置中除去颗粒的方法包括：第一检测步骤，用于检测真空容器的内壁的温度;第二检测步骤，用于检测处理单元的温度;第一控制步骤，气体和气体引入步骤，用于将气体引入真空容器的内部空间。

82. 发明申请

US20070227663A1 SUBSTRATE PROCESSING APPARATUS AND SIDE WALL COMPONENT 审中-公开
标题翻译：基板加工装置和侧壁组件
公开(公告)号：US20070227663A1
公开(公告)日：2007-10-04
申请号：US11691863
申请日：2007-03-27
申请人： Shosuke Endoh , Tsuyoshi Moriya , Akitaka Shimizu
发明人： Shosuke Endoh , Tsuyoshi Moriya , Akitaka Shimizu
IPC分类号： C23F1/00
CPC分类号： H01J37/32477
摘要： a substrate processing apparatus that enables abnormal electrical discharges and metal contamination to be prevented from occurring. A processing chamber is configured to house and carry out predetermined plasma processing on a substrate. A lower electrode is disposed on a bottom portion of the processing chamber and has the substrate mounted thereon. An upper electrode is disposed in a ceiling portion of the processing chamber. A side wall component covering a side wall of the processing chamber faces onto a processing space between the upper electrode and the lower electrode. The side wall component has at least one electrode layer to which a DC voltage is applied. An insulating portion made of an insulating material is present at least between the electrode layer and the processing space and covers the electrode layer. The insulating portion is formed by thermally spraying the insulating material.
摘要翻译：能够防止发生异常放电和金属污染的基板处理装置。处理室配置成容纳并执行衬底上的预定等离子体处理。下电极设置在处理室的底部，并且其上安装有基板。上电极设置在处理室的顶部。覆盖处理室的侧壁的侧壁部件面向上电极和下电极之间的处理空间。侧壁部件具有至少一个施加了直流电压的电极层。至少在电极层和处理空间之间存在由绝缘材料制成的绝缘部分并且覆盖电极层。绝缘部分通过热喷涂绝缘材料形成。

83. 发明授权

US07045465B2 Particle-removing method for a semiconductor device manufacturing apparatus 失效
标题翻译：半导体装置制造装置的除粒方法
公开(公告)号：US07045465B2
公开(公告)日：2006-05-16
申请号：US09971463
申请日：2001-10-05
申请人： Natsuko Ito , Fumihiko Uesugi , Tsuyoshi Moriya
发明人： Natsuko Ito , Fumihiko Uesugi , Tsuyoshi Moriya
IPC分类号： H01L21/3111
CPC分类号： H01J37/32431 , H01J2237/022 , H01L21/67069 , Y10S156/916
摘要： In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.
摘要翻译：在通过向气体施加电压以产生等离子体来处理衬底的半导体器件制造装置中，通过施加负电压的电极在正极电压停止的时刻捕获或引导带正电的粒子，以防止颗粒到达基板。

84. 发明授权

US07006682B1 Apparatus for monitoring particles and method of doing the same 失效
标题翻译：用于监测颗粒的装置及其做法
公开(公告)号：US07006682B1
公开(公告)日：2006-02-28
申请号：US09656713
申请日：2000-09-07
申请人： Tsuyoshi Moriya , Fumihiko Uesugi , Natsuko Ito
发明人： Tsuyoshi Moriya , Fumihiko Uesugi , Natsuko Ito
IPC分类号： G06K9/00
CPC分类号： G01N15/1463 , G01N2015/1493
摘要： There is provided an apparatus for monitoring a size of a particle, including (a) a laser beam source which radiates a laser beam to an area in which particles exist, (b) a photodetector which receives the laser beam having been scattered by the particles, and outputs image data including brightness of pixels, (c) an area detector which detects pixels corresponding to an area on which the scattered laser beam is incident, based on the image data, (d) a maximum brightness detector which detects a maximum brightness among brightness of the pixels detected by the area detector, and (e) a measurement unit which compares the maximum brightness to a predetermined threshold brightness to thereby measure a relative size of the particles.
摘要翻译：提供了一种用于监测颗粒尺寸的装置，包括（a）将激光束照射到存在颗粒的区域的激光束源，（b）接收由颗粒散射的激光束的光电检测器，输出包括像素亮度的图像数据，（c）基于图像数据检测与散射激光束入射的区域对应的像素的区域检测器，（d）检测最大亮度的最大亮度检测器在由区域检测器检测到的像素的亮度之间，以及（e）测量单元，其将最大亮度与预定阈值亮度进行比较，从而测量颗粒的相对尺寸。

85. 发明申请

US20050087136A1 Particle sticking prevention apparatus and plasma processing apparatus 有权
标题翻译：防尘装置和等离子体处理装置
公开(公告)号：US20050087136A1
公开(公告)日：2005-04-28
申请号：US10959197
申请日：2004-10-07
申请人： Tsuyoshi Moriya , Hiroshi Nagaike , Teruyuki Hayashi , Kaoru Fujihara
发明人： Tsuyoshi Moriya , Hiroshi Nagaike , Teruyuki Hayashi , Kaoru Fujihara
IPC分类号： B65G49/06 , C23C16/00 , H01L21/00 , H01L21/30 , H01L21/68
CPC分类号： H01L21/67069 , H01J2237/0048 , H01L21/67028
摘要： In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.
摘要翻译：为了防止单元中的颗粒在基板处理工艺中粘附到基板上，离子发生器对颗粒进行充电。同时，从直流电源向衬底施加与粒子的带电极性相同极性的直流电压。为了防止在产生气体等离子体时产生颗粒，在多个阶段向上下电极施加高频电压以产生等离子体。换句话说，在第一步骤中，将等离子体可点燃的最小高频电压施加到上电极和下电极，从而产生最小等离子体。此后，施加的电压分级地增加以产生预定的等离子体。

86. 发明申请

US20050039773A1 Particle removal apparatus and method and plasma processing apparatus 有权
标题翻译：粒子去除装置及方法及等离子体处理装置
公开(公告)号：US20050039773A1
公开(公告)日：2005-02-24
申请号：US10920367
申请日：2004-08-18
申请人： Tsuyoshi Moriya , Hiroshi Nagaike
发明人： Tsuyoshi Moriya , Hiroshi Nagaike
IPC分类号： H05H1/46 , B23K9/00 , C23C16/44 , C25F1/00 , C25F3/30 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/304 , H01L21/3065
CPC分类号： H01J37/32431 , C23C16/4401 , H01J2237/022
摘要： A particle removal apparatus for removing particles from a chamber of a plasma processing apparatus, wherein the chamber is connected to a gas exhaust port and a plasma of a processing gas is generated in the chamber to plasma process a substrate to be processed, includes a particle charging control member for positively charging particles generated within the chamber by positive ions of an ion sheath region formed in a region other than the vicinity of the substrate to be processed, wherein positively charged particles are discharged from the chamber via the gas exhaust port. Therefore, there is no plasma disturbance or metal contamination, and thus can be applied to a practical use.
摘要翻译：一种用于从等离子体处理装置的室中除去颗粒的颗粒去除装置，其中所述室连接到排气口，并且在所述室中产生处理气体的等离子体，以等离子体处理待处理的基板，包括颗粒充电控制构件，用于通过形成在除被处理基板附近的区域中的离子鞘区域的正离子正向地对室内产生的颗粒进行充电，其中带正电的颗粒经由排气口从室排出。因此，没有等离子体干扰或金属污染，因此可以应用于实际应用。

87. 发明授权

US06737666B1 Apparatus and method for detecting an end point of a cleaning process 有权
标题翻译：用于检测清洁过程的终点的装置和方法
公开(公告)号：US06737666B1
公开(公告)日：2004-05-18
申请号：US09721703
申请日：2000-11-27
申请人： Natsuko Ito , Tsuyoshi Moriya , Fumihiko Uesugi , Yoshinori Kato , Masaru Aomori , Shuji Moriya , Mitsuhiro Tachibana
发明人： Natsuko Ito , Tsuyoshi Moriya , Fumihiko Uesugi , Yoshinori Kato , Masaru Aomori , Shuji Moriya , Mitsuhiro Tachibana
IPC分类号： G01N2149
CPC分类号： H01J37/32935 , C23C16/4405 , C23C16/52 , G01N21/49 , H01J37/32963 , Y10S438/905
摘要： A cleaning end point detecting apparatus detects an end point of a cleaning process in which contamination attached to an inner wall of a reaction chamber is removed by introducing a cleaning gas into the chamber to produce a cluster cloud and detached particles. An irradiating unit irradiates a laser beam onto the cluster cloud and the detached particles within the reaction chamber to produce a scattered laser beam. A monitoring unit monitors the scattered laser beam as a two-dimensional image information. A judging unit judges the end point of the cleaning process on the basis of the two-dimensional image information. Preferably, the judging unit judges, as the end point of the cleaning process, a time instant when neither the detached particles nor the cluster cloud are detected on the basis of the two-dimensional image information.
摘要翻译：清洗终点检测装置检测清洁过程的终点，其中通过将清洁气体引入室中来除去附着在反应室内壁上的污染物，以产生簇云和分离的颗粒。照射单元将激光束照射到聚簇云和反应室内的分离的颗粒以产生散射的激光束。监视单元将散射的激光束监视为二维图像信息。判断单元基于二维图像信息判断清洁处理的结束点。优选地，判断单元基于二维图像信息来判断清除处理的结束点是否没有检测到分离的颗粒和簇云的时刻。

88. 发明授权

US06423176B1 Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles 失效
标题翻译：用于半导体器件制造装置的除粒装置和除去颗粒的方法
公开(公告)号：US06423176B1
公开(公告)日：2002-07-23
申请号：US09685351
申请日：2000-10-10
申请人： Natsuko Ito , Fumihiko Uesugi , Tsuyoshi Moriya
发明人： Natsuko Ito , Fumihiko Uesugi , Tsuyoshi Moriya
IPC分类号： H05H100
CPC分类号： H01J37/32431 , H01J2237/022 , H01L21/67069 , Y10S156/916
摘要： In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.
摘要翻译：在通过向气体施加电压以产生等离子体来处理衬底的半导体器件制造装置中，通过施加负电压的电极在正极电压停止的时刻捕获或引导带正电的粒子，以防止颗粒到达基板。

89. 发明授权

US09209010B2 Substrate cleaning method and substrate cleaning device 有权
标题翻译：基板清洗方法和基板清洗装置
公开(公告)号：US09209010B2
公开(公告)日：2015-12-08
申请号：US13579772
申请日：2011-02-03
申请人： Hidefumi Matsui , Tsuyoshi Moriya , Masaki Narushima
发明人： Hidefumi Matsui , Tsuyoshi Moriya , Masaki Narushima
IPC分类号： B08B5/02 , B08B7/00 , H01L21/02 , H01L21/67
CPC分类号： H01L21/02057 , B08B5/02 , H01L21/02046 , H01L21/67028
摘要： A substrate cleaning method includes removing a foreign material attached to a substrate while preventing deterioration of the substrate and any film formed on or above the substrate. A cleaning gas at a pressure between 0.3 MPa and 2.0 MPa is sprayed towards a wafer W with attached foreign material 22 placed in a near-vacuum, producing clusters 21 made up of a multitude of gas molecules 20, and the clusters 21 collide with the wafer W without undergoing ionization.
摘要翻译：基板清洗方法包括除去附着在基板上的异物，同时防止基板和在基板上或上方形成的任何膜的劣化。在0.3MPa和2.0MPa之间的压力下的清洁气体被喷射到具有接近真空的附着异物22的晶片W上，从而产生由多个气体分子20构成的团簇21，并且团簇21与晶片W不经历电离。

90. 发明授权

US08894355B2 Turbomolecular pump, and particle trap for turbomolecular pump 有权
标题翻译：涡轮分子泵和用于涡轮分子泵的颗粒捕集器
公开(公告)号：US08894355B2
公开(公告)日：2014-11-25
申请号：US13146497
申请日：2010-02-05
申请人： Yukiteru Sekita , Kazuma Kubota , Tsuyoshi Moriya , Eiichi Sugawara
发明人： Yukiteru Sekita , Kazuma Kubota , Tsuyoshi Moriya , Eiichi Sugawara
IPC分类号： F04D19/04 , F04D29/70
CPC分类号： F04D29/701 , F04D19/042
摘要： A turbomolecular pump includes: a rotor (30) formed with rotating blades (32) in a plurality of stages, and rotating at high speed; a plurality of fixed blades (33) arranged along axial direction of the pump so as to alternate with respect to the rotating blades (32); a pump housing (34) containing the rotating blades (32) and the fixed blades (33), and formed with an inlet opening (21a); a circular disk (150), provided close to the inlet opening of the rotor (30), and arranged so as to oppose a surface of the rotor (30) radially inward than a root portion of the rotating blades; and a cylindrical mesh structure (153a, 153b), disposed between the inlet opening (21a) and the rotor (30), and made by interlacing fine wires. Particles that strike the rotor and bounce off are captured internally in the mesh structure (153a, 153b).
摘要翻译：涡轮分子泵包括：转子（30），其形成有多级的旋转叶片（32），并且高速旋转; 沿所述泵的轴向布置成相对于所述旋转叶片（32）交替的多个固定叶片（33）。包含旋转叶片（32）和固定叶片（33）的泵壳体（34），并形成有入口开口（21a）; 设置在所述转子（30）的入口附近的圆盘（150），并且与所述旋转叶片的根部径向向内配置成与所述转子（30）的表面相对; 以及设置在入口开口（21a）和转子（30）之间并通过交织细线制成的圆柱形网状结构（153a，153b）。撞击转子和反弹的颗粒被内部捕获在网状结构（153a，153b）中。

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