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    • 3. 发明授权
    • Sheet-shaped medium feeding device and sheet-shaped medium processing device
    • 片状介质给料装置和片状介质处理装置
    • US08833756B2
    • 2014-09-16
    • US13615775
    • 2012-09-14
    • Hiroyuki Nakayama
    • Hiroyuki Nakayama
    • B65H3/06B65H3/52B41J3/44B65H1/02
    • B41J3/44B65H1/025B65H3/0653B65H3/0669B65H2403/422B65H2701/1912
    • A sheet-shaped medium feeding device is provided. A power transmission mechanism includes a retardation mechanism configured to retard rotation start timing of a pick-up roller than movement start timing of a pressing member when the pressing member starts to move from a stand-by position toward the pick-up roller. The retardation mechanism includes a driving side rotational member and a driven side rotational member which are configured to rotate around a common center axis. When the driving side rotational member rotates around the center axis in a predetermined rotation direction by a predetermined play angle, the driving side rotational member is engaged with the driven side rotational member to integrally rotate the driven side rotational member in the rotation direction.
    • 提供了片状介质供给装置。 动力传递机构包括延迟机构,该延迟机构构成为当按压部件开始从待机位置朝向拾取辊移动时,延迟拾取辊的旋转开始正时,而不是按压部件的移动开始正时。 延迟机构包括驱动侧旋转构件和从动侧旋转构件,其构造成围绕公共中心轴线旋转。 当驱动侧旋转构件以预定的旋转方向围绕中心轴旋转预定的游隙角时,驱动侧旋转构件与从动侧旋转构件接合,以使从动侧旋转构件沿旋转方向一体地旋转。
    • 8. 发明授权
    • Plasma processing apparatus and method, and storage medium
    • 等离子体处理装置和方法以及存储介质
    • US08440050B2
    • 2013-05-14
    • US12372156
    • 2009-02-17
    • Manabu IwataHiroyuki NakayamaKenji MasuzawaMasanobu Honda
    • Manabu IwataHiroyuki NakayamaKenji MasuzawaMasanobu Honda
    • C23F1/00H01L21/306G06F19/00
    • H01J37/32027H01J37/32091H01J37/32165
    • A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.
    • 等离子体处理装置包括真空排气处理室,分为外部电极和内部电极的第一电极,第二电极,第一和第二高频电力施加单元,用于向第二电极施加第一和第二高电平 第一和第二直流电压施加电路分别对外电极和内电极分别施加直流电压和处理气体供给单元。 第一电极和第二电极之间的空间用作等离子体产生空间,外部电极的频率阻抗特性被设定为使得阻抗在第二高频功率的频率下增加,并且在第一 随着施加到外部电极的DC电压的增加,高频功率增加。
    • 9. 发明授权
    • Plasma processing apparatus and method
    • 等离子体处理装置及方法
    • US08404050B2
    • 2013-03-26
    • US13559373
    • 2012-07-26
    • Tsuyoshi MoriyaHiroyuki Nakayama
    • Tsuyoshi MoriyaHiroyuki Nakayama
    • C23C16/00
    • H01J37/32431H01J2237/022
    • There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.
    • 提供了一种等离子体处理装置,其包括等离子体产生单元,用于在处理室中产生等离子体,其中对作为待处理对象的基板进行设定处理。 等离子体处理装置还包括一个粒子移动单元,用于在通过使用等离子体进行基板上的处理的同时,在处理室中的基板上方的区域中,将基板上方的区域中的颗粒静电驱动。 此外,提供了一种等离子体处理装置的等离子体处理方法,其包括以下步骤:在对作为被处理对象的基板进行设定处理的处理室中产生等离子体; 并通过等离子体对衬底进行处理。