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    • 2. 发明授权
    • Processing apparatus
    • 处理装置
    • US09150965B2
    • 2015-10-06
    • US13262005
    • 2010-03-30
    • Shuji MoriyaToyohiko ShindoNoboru Tamura
    • Shuji MoriyaToyohiko ShindoNoboru Tamura
    • C23F1/00H01L21/306C23C16/44C23C16/448C23C16/452C23C16/52C23C16/455
    • C23C16/4402C23C16/448C23C16/4488C23C16/452C23C16/45561C23C16/52
    • A processing apparatus includes a gas supply passage for supplying a corrosive gas having a halogen, a part of the passage being made of a metal; a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage, the collision energy being generated from a collision between the obstacle and said corrosive gas. A reaction for stabilizing a compound containing the metal and the halogen contained in the corrosive gas takes place by means of at least one of the light energy, heat energy, and collision energy; and a trapping unit which traps the compound stabilized in the stabilization reaction unit.
    • 一种处理装置,包括用于供给具有卤素的腐蚀性气体的气体供给通道,所述通道的一部分由金属制成; 稳定化反应单元,其具有能量发生器,用于向已经通过气体供给通道的金属部分的腐蚀性气体提供光能或热能,和/或具有构造成将碰撞能量施加到具有 通过供气通道的金属部分,碰撞能量是由障碍物和腐蚀性气体之间的碰撞产生的。 通过光能,热能和碰撞能量中的至少一种,使包含在腐蚀性气体中的金属和卤素的化合物稳定化的反应; 以及捕获稳定化反应单元中稳定化合物的捕集单元。
    • 4. 发明授权
    • Thermal type mass flow meter, and thermal type mass flow control device
    • 热式质量流量计,热式质量流量控制装置
    • US08219329B2
    • 2012-07-10
    • US12295037
    • 2007-05-23
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • G01F1/00G01F1/12
    • G01F25/0007G01F1/48G01F1/6847G01F1/6965G05D7/0635
    • A thermal mass flow meter and a thermal mass flow control device addresses a thermal siphon error, even if they are in a compact and inexpensive structure, without using a flow path converting block. A control computing process portion is configured to correct a measurement error caused by thermal siphon by calculating a correction value based on a measurement value at time of depressurizing fluid flow path and flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at time of charging an actual fluid into the flow rate measuring conduit, kind of the actual fluid, pressure at time of charging the actual fluid, and flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output flow value by the stored correction value.
    • 热质量流量计和热质量流量控制装置即使处于紧凑且廉价的结构中也能解决热虹吸误差,而不使用流路转换块。 控制计算处理部分被配置为通过基于在将流体流动路径和流量测量导管减压到大气压或更低时的测量值计算校正值来校正由热虹吸引起的测量误差,测量之间的差异 值和在将实际流体充入流量测量导管时的测量值,实际流体的种类,对实际流体充电时的压力以及在流体流动路径中流动的流体的流量比和流量 测量管道,存储校正值,以及通过存储的校正值校正实际测量的输出流量值。
    • 6. 发明申请
    • THERMAL TYPE MASS FLOW METER, AND THERMAL TYPE MASS FLOW CONTROL DEVICE
    • 热式流量计和热式流量控制装置
    • US20110125445A1
    • 2011-05-26
    • US12295037
    • 2007-05-23
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • G01L27/00
    • G01F25/0007G01F1/48G01F1/6847G01F1/6965G05D7/0635
    • The present invention provides a thermal type mass flow meter and a thermal type mass flow control device which can lower a measurement error caused by an influence of a thermal siphon phenomenon so as to intend to improve a flow rate measurement precision while it is possible to construct a whole compactly and inexpensively with a simple structure, without using any flow path converting block.The present invention has a CPU for correction computing process which works to cancel a measurement error caused by an influence of a thermal siphon phenomenon by calculating a correction value based on a measurement value at a time of depressurizing a fluid flow path in a block and a flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at a time of charging an actual fluid into the flow rate measuring conduit, a kind of the actual fluid, a pressure at a time of charging the actual fluid, and a flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output value by the correction value.
    • 本发明提供一种热式质量流量计和热式质量流量控制装置,其可以降低由热虹吸现象引起的测量误差,从而有助于提高流量测量精度,同时可以构造 整体紧凑且廉价,结构简单,无需任何流路转换块。 本发明具有用于校正计算处理的CPU,其通过基于在块中的流体流路减压时的测量值计算校正值来消除由热虹吸现象的影响引起的测量误差, 流量测量管道到大气压力或更低,测量值与将实际流体充入流量测量管道时的测量值之间的差异,实际流体的种类,充电时的压力 实际流体以及在流体流路和流量测量导管中流动的流体的流量比,存储校正值,并将实际测量的输出值校正校正值。
    • 8. 发明申请
    • Gas supply system and gas supply accumulation unit of semiconductor manufacturing apparatus
    • 半导体制造装置的供气系统和气体供应蓄积单元
    • US20080295963A1
    • 2008-12-04
    • US12068029
    • 2008-01-31
    • Shuji MoriyaKen Nakao
    • Shuji MoriyaKen Nakao
    • C23F1/08C23C16/00C23C14/34
    • C23C16/4402C23C16/4404C23C16/45561C30B25/14C30B31/16H01J37/3244Y02E60/34
    • A gas supply system 200 is a system that supplies a predetermined gas from a gas supply source 210 to a processing part 110 of a semiconductor manufacturing apparatus 100. The gas supply system 200 includes a gas supply passage apparatus 220 that is connected to the gas supply source 210 and the processing part 110. The gas supply passage apparatus 220 is provided with a plurality of fluid controllers (a hand valve 231, a pressure reducing valve 232, a manometer 233, a check valve 234, a first shutoff valve 235, a second shutoff valve 236, a massflow controller 237, and a gas filter 238), and passage structuring members (passage blocks 241 to 249) that are connected to positions between the respective fluid controllers 231 to 238 and form gas passages 221 to 229. The passage structuring members are made of a carbon material. Thus, when a corrosive gas is supplied to the processing part 110, mixture of a metal contaminant into a substrate to be processed W can be prevented as much as possible.
    • 气体供给系统200是将预定气体从气体供给源210供给到半导体制造装置100的处理部110的系统。气体供给系统200包括气体供给通道装置220,其与气体供给 源210和处理部110.气体供给通道装置220设置有多个流体控制器(手动阀231,减压阀232,压力计233,止回阀234,第一截止阀235, 第二截止阀236,质量流量控制器237和气体过滤器238)以及与各个流体控制器231至238之间的位置连接并形成气体通道221至229的通道结构构件(通道块241至249)。 通道结构构件由碳材料制成。 因此,当向处理部110供给腐蚀性气体时,可以尽可能地防止金属污染物混入待处理基板W。
    • 10. 发明申请
    • Developing apparatus
    • 开发设备
    • US20060233573A1
    • 2006-10-19
    • US11402054
    • 2006-04-12
    • Naoto KichijimaKoichi OkudaYasushi ShimizuKenya OgawaShuji MoriyaKazunari Hagiwara
    • Naoto KichijimaKoichi OkudaYasushi ShimizuKenya OgawaShuji MoriyaKazunari Hagiwara
    • G03G15/09
    • G03G15/0907
    • A developing apparatus having: a rotatable developing roller for developing an electrostatic image with a mono-component magnetic developer at a developing position; a non-rotary magnet roll inside the roller; a blade for regulating the amount of the developer at a developer regulating position; and an abutting member abutting against the roller downstream of the developing position and upstream of the developer regulating position, wherein the following expressions are satisfied: |Vs|>|Vdev|, |Br|/|B|≦0.5, and L/(BH×R)≧0.1, where |Vdev|: a DC component Vdev of a voltage applied to the roller, |Vs|: a DC component Vs of a voltage applied to the member, B(G): the magnetic flux density formed on the surface of the roller at the abutting position by the magnet roll, Br(G): the component of the magnetic flux density B(G) perpendicular to the surface of the roller, and L(mm): the abutting width between the roller and the member, BH(rad): the half value width of the component Bθ(G) horizontal to the surface of the roller, and R(mm): the radius of the roller.
    • 一种显影装置,具有:用于在显影位置用单组分磁性显影剂显影静电图像的可旋转显影辊; 辊内的非旋转磁辊; 用于调节显影剂调节位置处的显影剂量的刀片; 和抵抗构件抵接在显影位置下游和显影剂调节位置上游的滚子,其中满足以下表达式:| Vs |> | Vdev |,| Br | / | B | <= 0.5和L / (BHxR)> = 0.1,其中| Vdev |:施加到辊的电压的DC分量Vdev | Vs |:施加到部件的电压的DC分量Vs,B(G):形成的磁通密度 在磁辊的邻接位置的辊表面上,Br(G):垂直于辊表面的磁通密度B(G)的分量,L(mm): 辊和构件BH(rad):水平面与辊表面的部件Btheta(G)的半值宽度,R(mm):辊的半径。