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81. 发明申请

US20110091685A1 POLYMERIC EDGE SEAL FOR BONDED SUBSTRATES 有权
标题翻译：用于粘合基材的聚合物边缘密封
公开(公告)号：US20110091685A1
公开(公告)日：2011-04-21
申请号：US12603002
申请日：2009-10-21
申请人： Mukta G. Farooq , Thomas F. Houghton , Nitin Parbhoo , Richard P. Volant
发明人： Mukta G. Farooq , Thomas F. Houghton , Nitin Parbhoo , Richard P. Volant
IPC分类号： B32B7/00 , B32B37/00
CPC分类号： B32B37/1292 , B32B3/02 , B32B27/08 , B32B37/1284 , B32B2457/14 , H01L21/187 , Y10T156/10 , Y10T156/1064 , Y10T428/215 , Y10T428/219 , Y10T428/24355 , Y10T428/24752 , Y10T428/24777 , Y10T428/24802 , Y10T428/24851
摘要： A layer of polymer material is applied on a peripheral region of at least one of the two substrates to be bonded prior to bonding. The bonded structure formed thereby includes a first substrate, a second substrate in direct contact with the first substrate, and a ring of the polymer material in direct contact with the first substrate at a first interface and in direct contact with the second substrate. The ring of polymer material laterally surrounds and seals the interface at which the first substrate contacts the second substrate. A ring-shaped cavity can be formed within the polymeric ring. Alternately, the first interface and the second interface can be contiguous without a ring-shaped cavity between the first and second substrates.
摘要翻译：在接合之前，将待结合的两个基板中的至少一个的外围区域上施加一层聚合物材料。由此形成的接合结构包括第一基板，与第一基板直接接触的第二基板，以及在第一界面处与第一基板直接接触并与第二基板直接接触的聚合物材料的环。聚合物材料环横向包围并密封第一基底与第二基底接触的界面。可以在聚合物环内形成环形空腔。或者，第一界面和第二界面可以相邻，而在第一和第二基板之间没有环形腔。

82. 发明申请

US20090019691A1 MICRO-ELECTROMECHANICAL SUB-ASSEMBLY HAVING AN ON-CHIP TRANSFER MECHANISM 失效
标题翻译：具有片上传输机制的微电子组件
公开(公告)号：US20090019691A1
公开(公告)日：2009-01-22
申请号：US10597012
申请日：2004-01-15
申请人： Christopher M. Schnabel , Peter A. Smith , John E. Florkey , Richard P. Volant
发明人： Christopher M. Schnabel , Peter A. Smith , John E. Florkey , Richard P. Volant
IPC分类号： H05K3/30
CPC分类号： B81C3/002 , Y10T29/4913 , Y10T29/49133 , Y10T29/53178 , Y10T29/53183 , Y10T29/53187
摘要： Carriers (10) holding parts (50) for assembling complex MEMS devices are transported to a central assembly location. The parts are stacked in a pre-assigned order and later released from their carriers. Alternatively, they are positioned over the appropriate location and released so as to fall into position as needed. The assembly area (100) includes a cavity below the plane of the carriers such that the parts held within the carrier drop into the cavity. Heating elements are integrated into the cavity to assist in the release of the parts. The cavity is supplied with parts by one or more carriers which are move around by any number of MEMS drive systems (200, 250). The cavity and some of the MEMS assembled therein deliver with precision amounts of materials as required suitable for biomedical applications, or may be processed in-situ, as in an on-chip laboratory.
摘要翻译：用于组装复杂MEMS器件的载体（10）保持部件（50）被运输到中心组装位置。这些部件以预先分配的顺序堆叠，然后从其运营商释放。或者，它们被定位在适当的位置上并被释放以便根据需要落入位置。组装区域（100）包括在载体平面下方的空腔，使得保持在载体内的部分落入空腔内。加热元件集成到腔体中以帮助部件的释放。空腔由一个或多个载体提供，该载体通过任何数量的MEMS驱动系统（200,250）移动。组装在其中的腔和一些MEMS提供精确量的材料，适合于生物医学应用，或者可以像在片上实验室一样原位加工。

83. 发明申请

US20080157382A1 DIRECT TERMINATION OF A WIRING METAL IN A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：在半导体器件中直接终止接线金属
公开(公告)号：US20080157382A1
公开(公告)日：2008-07-03
申请号：US11617202
申请日：2006-12-28
申请人： Anil K. Chinthakindi , Douglas D. Coolbaugh , Timothy J. Dalton , Ebenezer E. Eshun , Anthony K. Stamper , Richard P. Volant
发明人： Anil K. Chinthakindi , Douglas D. Coolbaugh , Timothy J. Dalton , Ebenezer E. Eshun , Anthony K. Stamper , Richard P. Volant
IPC分类号： H01L23/48
CPC分类号： H01L23/53223 , H01L23/53228 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/10 , H01L2224/0401 , H01L2224/04042 , H01L2224/05006 , H01L2224/05093 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05568 , H01L2224/05624 , H01L2224/45124 , H01L2224/48724 , H01L2924/00014 , H01L2924/0002 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/05552
摘要： Direct termination of a wiring metal in a semiconductor device. Direct termination of an AlCu stack or an AlCu layer is made with an underlying Cu wiring level. The AlCu stack or AlCu layer covers all of the Cu wiring level such that it has a border that extends beyond all of the wiring to prevent exposure from occurring.
摘要翻译：直接终止半导体器件中的布线金属。 AlCu堆叠或AlCu层的直接终止是用下面的铜布线层进行的。 AlCu堆叠或AlCu层覆盖所有Cu布线级别，使得其具有延伸超出所有布线的边界，以防止发生曝光。

84. 发明授权

US06836029B2 Micro-electromechanical switch having a conductive compressible electrode 有权
标题翻译：具有导电可压缩电极的微机电开关
公开(公告)号：US06836029B2
公开(公告)日：2004-12-28
申请号：US09996148
申请日：2001-11-28
申请人： David R. Greenberg , Hariklia Deligianni , Robert A. Groves , Christopher V. Jahnes , Jennifer L. Lund , Katherine L. Saenger , Richard P. Volant
发明人： David R. Greenberg , Hariklia Deligianni , Robert A. Groves , Christopher V. Jahnes , Jennifer L. Lund , Katherine L. Saenger , Richard P. Volant
IPC分类号： H01H300
CPC分类号： B81B3/0016 , B81C2201/112 , H01H1/24 , H01H59/0009 , H01H2001/0089 , Y10T307/826 , Y10T307/911 , Y10T307/937
摘要： A micro-electro mechanical switch having a restoring force sufficiently large to overcome stiction is described. The switch is provided with a deflectable conductive beam and multiple electrodes coated with an elastically deformable conductive layer. A restoring force which is initially generated by a single spring constant k0 upon the application of a control voltage between the deflectable beam and a control electrode coplanar to the contact electrodes is supplemented by adding to k0 additional spring constants k1, . . . , kn provided by the deformable layers, once the switch nears closure and the layers compress. In another embodiment, deformable, spring-like elements are used in lieu of the deformable layers. In an additional embodiment, the compressible layers or deformable spring-like elements are affixed to the deflecting beam facing the switch electrodes
摘要翻译：描述了具有足够大以克服静止的恢复力的微电机械开关。开关设置有可偏转的导电束和涂覆有可弹性变形的导电层的多个电极。在施加可调光束和与接触电极共面的控制电极之间的控制电压时，初始由单个弹簧常数k0产生的恢复力通过增加k0个额外的弹簧常数k1来补充。。。由可变形层提供的，一旦开关接近闭合并且层压缩。在另一个实施例中，使用可变形的弹簧状元件代替可变形层。在另外的实施例中，可压缩层或可变形的弹簧状元件固定到面向开关电极的偏转梁

85. 发明授权

US06831542B2 Micro-electromechanical inductive switch 失效
标题翻译：微机电感应开关
公开(公告)号：US06831542B2
公开(公告)日：2004-12-14
申请号：US10248876
申请日：2003-02-26
申请人： Richard P. Volant , John E. Florkey , Robert A. Groves
发明人： Richard P. Volant , John E. Florkey , Robert A. Groves
IPC分类号： H01F2104
CPC分类号： H03K17/965 , H01F7/066 , H01F7/14 , H01F2007/068 , H01H59/0009
摘要： A micro-electro mechanical (MEM) switch capable of inductively coupling and decoupling electrical signals is described. The inductive MEM switch consists of a first plurality of coils on a movable platform and a second plurality of coils on a stationary platform or substrate, the coils on the movable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the movable platform with respect to the coils on the stationary substrate. Diverse arrangements of coils respectively on the movable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.
摘要翻译：描述了能够感应耦合和去耦电信号的微机电（MEM）开关。电感式MEM开关由可移动平台上的第一组多个线圈和固定平台或基板上的第二组线圈构成，可移动平台上的线圈高于或低于固定基板中的线圈。通过旋转或相对于固定基板上的线圈横向移动可移动平台的线圈而发生耦合和解耦。分别在可移动和固定基板上的线圈的不同配置允许多极和多位置的切换配置。所描述的MEM开关消除了开关触点的静电，电弧和焊接的问题。本发明的MEMS开关可以使用标准CMOS技术制造。

86. 发明授权

US09151781B2 Yield enhancement for stacked chips through rotationally-connecting-interposer 有权
标题翻译：通过旋转连接插入器对堆叠芯片的产量提高
公开(公告)号：US09151781B2
公开(公告)日：2015-10-06
申请号：US13397781
申请日：2012-02-16
申请人： Oleg Gluschenkov , Muthukumarasamy Karthikeyan , Yunsheng Song , Tso-Hui Ting , Richard P. Volant , Ping-Chuan Wang
发明人： Oleg Gluschenkov , Muthukumarasamy Karthikeyan , Yunsheng Song , Tso-Hui Ting , Richard P. Volant , Ping-Chuan Wang
IPC分类号： G01R31/26 , H01L23/58 , G01R1/073 , H01L21/66 , H01L25/00
CPC分类号： G01R1/07378 , H01L22/14 , H01L22/20 , H01L25/50 , H01L2225/06596 , H01L2924/0002 , H01L2924/00
摘要： A set of first substrate and second substrate are manufactured with a built-in N-fold rotational symmetry around the center axis of each substrate, wherein N is an integer greater than 1. A set of N different interposers is provided such that an i-th interposer provides electrical connection between the first substrate and the second substrate with a rotational angle of (i−1)/N×2π. The first and second substrates are tested with each of the N different interposers therebetween. Once the rotational angle that provides the highest stacked chip yield is determined, the first and the second substrates can be bonded with an azimuthal rotation that provides the highest stacked chip yield.
摘要翻译：一组第一衬底和第二衬底被制造成围绕每个衬底的中心轴线具有内置的N倍旋转对称，其中N是大于1的整数。提供一组N个不同的插入件，（i-1）/ N×2＆pgr的转角提供第一基板和第二基板之间的电连接。测试第一和第二衬底中的每个N个不同的插入件。一旦确定了提供最高堆叠芯片产量的旋转角度，则可以以提供最高堆叠芯片产量的方位角旋转来接合第一和第二基板。

87. 发明申请

US20140035109A1 METHOD AND STRUCTURE OF FORMING BACKSIDE THROUGH SILICON VIA CONNECTIONS 有权
标题翻译：通过连接通过硅形成背面的方法和结构
公开(公告)号：US20140035109A1
公开(公告)日：2014-02-06
申请号：US13562927
申请日：2012-07-31
申请人： Richard P. Volant , Mukta G. Farooq
发明人： Richard P. Volant , Mukta G. Farooq
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L23/5226 , H01L21/76802 , H01L21/76819 , H01L21/76829 , H01L21/76879 , H01L21/76898 , H01L23/481 , H01L23/49827 , H01L23/528 , H01L23/53295 , H01L24/05 , H01L2224/05647 , H01L2924/00014
摘要： A method, and the resulting structure, to make a thinned substrate with backside redistribution wiring connected to through silicon vias of varying height. The method includes thinning a backside of a substrate to expose through silicon vias. Then a thick insulator stack, including an etch stop layer, is deposited and planarized. With a planar insulating surface in place, openings in the insulator stack can be formed by etching. The etch stop layer in the dielectric stack accommodates the differing heights vias. The etch stop is removed and a conductor having a liner is formed in the opening. The method gives a unique structure in which a liner around the bottom of the through silicon via remains in tact. Thus, the liner of the via and a liner of the conductor meet to form a double liner at the via/conductor junction.
摘要翻译：一种方法和所得到的结构，使得具有通过不同高度的硅通孔连接到背侧再分布布线的薄化基板。该方法包括使衬底的背面变薄以通过硅通孔暴露。然后沉积包括蚀刻停止层的厚的绝缘体堆叠并平坦化。通过平面绝缘表面就可以通过蚀刻形成绝缘体堆叠中的开口。电介质堆叠中的蚀刻停止层容纳不同的高度通孔。去除蚀刻停止件，并且在开口中形成具有衬垫的导体。该方法提供了一种独特的结构，其中通过硅通孔底部的衬垫仍然保持平衡。因此，通孔的衬垫和导体的衬垫在通孔/导体结处相交以形成双衬垫。

88. 发明申请

US20110079702A1 FORMING A PROTECTIVE LAYER ON A MOLD AND MOLD HAVING A PROTECTIVE LAYER 审中-公开
标题翻译：在保护层模具和模具上形成保护层
公开(公告)号：US20110079702A1
公开(公告)日：2011-04-07
申请号：US12573904
申请日：2009-10-06
申请人： Bradley P. Jones , Sarah H. Knickerbocker , Richard P. Volant
发明人： Bradley P. Jones , Sarah H. Knickerbocker , Richard P. Volant
IPC分类号： B28B7/36 , B28B7/38 , B44C1/22
CPC分类号： H01L24/742 , H01L24/11 , H01L24/13 , H01L2224/11003 , H01L2224/131 , H01L2924/1431 , H01L2924/15788 , H01L2924/181 , H05K3/3478 , H01L2924/014 , H01L2924/00
摘要： A method of forming a mold having a protective layer includes forming a mold substrate having at least one substantially planar surface, depositing a layer of mold protection material onto the at least one substantially planar surface, and etching a plurality of cavities into the at least one substantially planar surface through the mold protection layer.
摘要翻译：一种形成具有保护层的模具的方法包括形成具有至少一个基本平坦的表面的模具基底，将一层模具保护材料沉积在所述至少一个基本平坦的表面上，以及将多个模腔蚀刻成至少一个基本平坦的表面通过模具保护层。

89. 发明授权

US07735216B2 Micro-electromechanical sub-assembly having an on-chip transfer mechanism 失效
标题翻译：具有片上传送机构的微机电子组件
公开(公告)号：US07735216B2
公开(公告)日：2010-06-15
申请号：US10597012
申请日：2004-01-15
申请人： Christopher M. Schnabel , Peter A. Smith , John E. Florkey , Richard P. Volant
发明人： Christopher M. Schnabel , Peter A. Smith , John E. Florkey , Richard P. Volant
IPC分类号： B23P19/00 , H05K3/30
CPC分类号： B81C3/002 , Y10T29/4913 , Y10T29/49133 , Y10T29/53178 , Y10T29/53183 , Y10T29/53187
摘要： Carriers (10) holding parts (50) for assembling complex MEMS devices are transported to a central assembly location. The parts are stacked in a pre-assigned order and later released from their carriers. Alternatively, they are positioned over the appropriate location and released so as to fall into position as needed. The assembly area (100) includes a cavity below the plane of the carriers such that the parts held within the carrier drop into the cavity. Heating elements are integrated into the cavity to assist in the release of the parts. The cavity is supplied with parts by one or more carriers which are move around by any number of MEMS drive systems (200, 250). The cavity and some of the MEMS assembled therein deliver with precision amounts of materials as required suitable for biomedical applications, or may be processed in-situ, as in an on-chip laboratory.
摘要翻译：用于组装复杂MEMS器件的载体（10）保持部件（50）被运输到中心组装位置。这些部件以预先分配的顺序堆叠，然后从其运营商释放。或者，它们被定位在适当的位置上并被释放以便根据需要落入位置。组装区域（100）包括在载体平面下方的空腔，使得保持在载体内的部分落入空腔内。加热元件集成到腔体中以帮助部件的释放。空腔由一个或多个载体提供，该载体通过任何数量的MEMS驱动系统（200,250）移动。组装在其中的腔和一些MEMS提供精确量的材料，适合于生物医学应用，或者可以像在片上实验室一样原位加工。

90. 发明授权

US07466010B2 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border 有权
标题翻译：具有自对准硅化物和自对准发射极接触边界的双极晶体管
公开(公告)号：US07466010B2
公开(公告)日：2008-12-16
申请号：US11175094
申请日：2005-07-05
申请人： David C. Ahlgren , Gregory G. Freeman , Marwan H. Khater , Richard P. Volant
发明人： David C. Ahlgren , Gregory G. Freeman , Marwan H. Khater , Richard P. Volant
IPC分类号： H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/66287 , H01L21/8249 , H01L29/0804 , H01L29/41708 , H01L29/42304 , H01L29/66242 , H01L29/732 , H01L29/7375 , H01L29/7378
摘要： The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do not include a self-aligned silicide and a self-aligned emitter contact border. The present invention also is related to methods of fabricating the inventive bipolar transistor structure. In the methods of the present invention, a block emitter polysilicon region replaces a conventional T-shaped emitter polysilicon.
摘要翻译：本发明提供一种具有凸起的非本征基极硅化物和自对准的发射极接触边界的双极晶体管。与不包括自对准硅化物和自对准发射极接触边界的双极晶体管相比，本发明的双极晶体管表现出减小的寄生效应。本发明还涉及制造本发明的双极晶体管结构的方法。在本发明的方法中，块状发射极多晶硅区域代替常规的T形发射极多晶硅。

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