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    • 1. 发明授权
    • High capacitance density vertical natural capacitors
    • 高电容密度垂直天然电容
    • US07643268B2
    • 2010-01-05
    • US12194566
    • 2008-08-20
    • Anil K. Chinthakindi
    • Anil K. Chinthakindi
    • H01G4/228H01L27/108H01L29/94
    • H01G4/228H01G4/30H01G4/33H01L23/5223H01L28/60H01L2924/0002Y10T29/417Y10T29/435H01L2924/00
    • Disclosed are embodiments of a capacitor with inter-digitated vertical plates and a method of forming the capacitor such that the effective gap distance between plates is reduced. This gap width reduction significantly increases the capacitance density of the capacitor. Gap width reduction is accomplished during back end of the line processing by masking connecting points with nodes, by etching the dielectric material from between the vertical plates and by etching a sacrificial material from below the vertical plates. Etching of the dielectric material from between the plates forms air gaps and various techniques can be used to cause the plates to collapse in on these air gaps, once the sacrificial material is removed. Any remaining air gaps can be filled by depositing a second dielectric material (e.g., a high k dielectric), which will further increase the capacitance density and will encapsulate the capacitor in order to make the reduced distance between the vertical plates permanent.
    • 公开了具有数字化的垂直板的电容器的实施例以及形成电容器的方法,使得板之间的有效间隙距离减小。 该间隙宽度减小显着增加了电容器的电容密度。 通过用节点掩蔽连接点,通过从垂直板之间蚀刻电介质材料,并通过从垂直板下方蚀刻牺牲材料,在线加工的后端完成间隙宽度减小。 一旦牺牲材料被去除,介质材料之间的介电材料的蚀刻形成气隙,并且可以使用各种技术来使板在这些气隙上塌陷。 可以通过沉积第二电介质材料(例如,高k电介质)来填充任何剩余的气隙,这将进一步增加电容密度并封装电容器,以使得垂直板之间的距离减小。
    • 9. 发明授权
    • Micro-electromechanical varactor with enhanced tuning range
    • 具有增强调谐范围的微机电变容二极管
    • US06696343B1
    • 2004-02-24
    • US10459978
    • 2003-06-12
    • Anil K. ChinthakindiRobert A. GrovesKenneth J. SteinSeshadri SubbannaRichard P. Volant
    • Anil K. ChinthakindiRobert A. GrovesKenneth J. SteinSeshadri SubbannaRichard P. Volant
    • H01L2120
    • H01G5/18B81B2201/01H01G5/011Y10S257/924
    • A three-dimensional micro- electromechanical (MEM) varactor is described wherein a movable beam and fixed electrode are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the “chip side” while the fixed bottom electrode is fabricated on a separated substrate “carrier side”. Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and “flipped over”, aligned and joined to the “carrier” substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.
    • 描述了三维微机电(MEM)变容二极管,其中可移动光束和固定电极分别制造在彼此耦合的分开的基板上。 具有梳状驱动电极的可移动光束在“芯片侧”上制造,而固定底部电极制造在分离的基板“载体侧”上。 在衬底的两个表面上制造器件时,芯片侧器件被切割并“翻转”,对准并接合到“载体”衬底以形成最终器件。 梳状驱动(鳍)电极用于致动,同时电极的运动提供电容的变化。 由于所涉及的驱动力恒定,可以获得大的电容调谐范围。 该装置的三维方面具有较大的表面积。 当提供大的纵横比特征时,可以使用较低的致动电压。 在制造时,MEMS器件被完全封装,不需要额外的器件封装。 此外,由于可以在晶片规模(晶片级MEMS封装)上进行取向和接合,所以可以以更低的成本获得改进的器件产量。