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1. 发明授权

US06836029B2 Micro-electromechanical switch having a conductive compressible electrode 有权
标题翻译：具有导电可压缩电极的微机电开关
公开(公告)号：US06836029B2
公开(公告)日：2004-12-28
申请号：US09996148
申请日：2001-11-28
申请人： David R. Greenberg , Hariklia Deligianni , Robert A. Groves , Christopher V. Jahnes , Jennifer L. Lund , Katherine L. Saenger , Richard P. Volant
发明人： David R. Greenberg , Hariklia Deligianni , Robert A. Groves , Christopher V. Jahnes , Jennifer L. Lund , Katherine L. Saenger , Richard P. Volant
IPC分类号： H01H300
CPC分类号： B81B3/0016 , B81C2201/112 , H01H1/24 , H01H59/0009 , H01H2001/0089 , Y10T307/826 , Y10T307/911 , Y10T307/937
摘要： A micro-electro mechanical switch having a restoring force sufficiently large to overcome stiction is described. The switch is provided with a deflectable conductive beam and multiple electrodes coated with an elastically deformable conductive layer. A restoring force which is initially generated by a single spring constant k0 upon the application of a control voltage between the deflectable beam and a control electrode coplanar to the contact electrodes is supplemented by adding to k0 additional spring constants k1, . . . , kn provided by the deformable layers, once the switch nears closure and the layers compress. In another embodiment, deformable, spring-like elements are used in lieu of the deformable layers. In an additional embodiment, the compressible layers or deformable spring-like elements are affixed to the deflecting beam facing the switch electrodes
摘要翻译：描述了具有足够大以克服静止的恢复力的微电机械开关。开关设置有可偏转的导电束和涂覆有可弹性变形的导电层的多个电极。在施加可调光束和与接触电极共面的控制电极之间的控制电压时，初始由单个弹簧常数k0产生的恢复力通过增加k0个额外的弹簧常数k1来补充。。。由可变形层提供的，一旦开关接近闭合并且层压缩。在另一个实施例中，使用可变形的弹簧状元件代替可变形层。在另外的实施例中，可压缩层或可变形的弹簧状元件固定到面向开关电极的偏转梁

2. 发明授权

US07602265B2 Apparatus for accurate and efficient quality and reliability evaluation of micro electromechanical systems 失效
标题翻译：微机电系统的准确高效的质量和可靠性评估装置
公开(公告)号：US07602265B2
公开(公告)日：2009-10-13
申请号：US11163485
申请日：2005-10-20
申请人： Hariklia Deligianni , Robert D. Edwards , Thomas J. Fleischman , Robert A. Groves , Charles J. Montrose , Richard P. Volant , Ping-Chuan Wang
发明人： Hariklia Deligianni , Robert D. Edwards , Thomas J. Fleischman , Robert A. Groves , Charles J. Montrose , Richard P. Volant , Ping-Chuan Wang
IPC分类号： H01H51/22
CPC分类号： H01H59/0009
摘要： The present invention provides multiple test structures for performing reliability and qualification tests on MEMS switch devices. A Test structure for contact and gap characteristic measurements is employed having a serpentine layout simulates rows of upper and lower actuation electrodes. A cascaded switch chain test is used to monitor process defects with large sample sizes. A ring oscillator is used to measure switch speed and switch lifetime. A resistor ladder test structure is configured having each resistor in series with a switch to be tested, and having each switch-resistor pair electrically connected in parallel. Serial/parallel test structures are proposed with MEMS switches working in tandem with switches of established technology. A shift register is used to monitor the open and close state of the MEMS switches. Pull-in voltage, drop-out voltage, activation leakage current, and switch lifetime measurements are performed using the shift register.
摘要翻译：本发明提供用于在MEMS开关装置上执行可靠性和鉴定测试的多个测试结构。采用具有蛇形布局的接触和间隙特性测量的测试结构来模拟上下驱动电极的行。级联交换链测试用于监控大样本量的过程缺陷。环形振荡器用于测量开关速度和开关寿命。电阻梯形测试结构被配置为具有与要测试的开关串联的每个电阻器，并且每个开关电阻器对并联电连接。提出了串联/并联测试结构，其中MEMS开关与成熟技术的开关串联工作。移位寄存器用于监测MEMS开关的开启和关闭状态。使用移位寄存器执行拉入电压，掉电电压，启动漏电流和开关寿命测量。

3. 发明授权

US07212091B2 Micro-electro-mechanical RF switch 有权
标题翻译：微机电RF开关
公开(公告)号：US07212091B2
公开(公告)日：2007-05-01
申请号：US11053732
申请日：2005-02-08
申请人： Panayotis Constantinou Andricacos , L. Paivikki Buchwalter , Hariklia Deligianni , Robert A. Groves , Christopher Jahnes , Jennifer L. Lund , Michael Meixner , David Earle Seeger , Timothy D. Sullivan , Ping-Chuan Wang
发明人： Panayotis Constantinou Andricacos , L. Paivikki Buchwalter , Hariklia Deligianni , Robert A. Groves , Christopher Jahnes , Jennifer L. Lund , Michael Meixner , David Earle Seeger , Timothy D. Sullivan , Ping-Chuan Wang
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H2001/0078
摘要： A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.
摘要翻译：一种微机电开关，包括：至少一对致动器电极; 分别输入和输出射频信号的至少一个输入电极和至少一个输出电极; 以及可由所述至少一对致动器电极之间的吸引部移动的光束，所述可移动光束具有至少一部分电连接到所述至少一个输入电极，并且当所述至少一个输入电极在所述至少一个输入电极之间被所述吸引力移动时，至少一对致动器电极，用于在所述至少一个输入和输出电极之间形成电连接; 其中所述至少一对致动器电极与所述至少一个输入和输出电极中的每一个电隔离。微机电开关可以配置为单极或多极和/或单掷或多掷。

4. 发明授权

US06876282B2 Micro-electro-mechanical RF switch 失效
标题翻译：微机电RF开关
公开(公告)号：US06876282B2
公开(公告)日：2005-04-05
申请号：US10150285
申请日：2002-05-17
申请人： Panayotis Constantinou Andricacos , L. Paivikki Buchwalter , Hariklia Deligianni , Robert A. Groves , Christopher Jahnes , Jennifer L. Lund , Michael Meixner , David Earle Seeger , Timothy D. Sullivan , Ping-Chuan Wang
发明人： Panayotis Constantinou Andricacos , L. Paivikki Buchwalter , Hariklia Deligianni , Robert A. Groves , Christopher Jahnes , Jennifer L. Lund , Michael Meixner , David Earle Seeger , Timothy D. Sullivan , Ping-Chuan Wang
IPC分类号： H01H59/00 , H01H51/22
CPC分类号： H01H59/0009 , H01H2001/0078
摘要： A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.
摘要翻译：一种微机电开关，包括：至少一对致动器电极; 分别输入和输出射频信号的至少一个输入电极和至少一个输出电极; 以及可由所述至少一对致动器电极之间的吸引部移动的光束，所述可移动光束具有至少一部分电连接到所述至少一个输入电极，并且当所述至少一个输入电极在所述至少一个输入电极之间被所述吸引力移动时，至少一对致动器电极，用于在所述至少一个输入和输出电极之间形成电连接; 其中所述至少一对致动器电极与所述至少一个输入和输出电极中的每一个电隔离。微机电开关可以配置为单极或多极和/或单掷或多掷。

5. 发明授权

US06414371B1 Process and structure for 50+ gigahertz transistor 有权
标题翻译： 50 +千兆赫晶体管的工艺和结构
公开(公告)号：US06414371B1
公开(公告)日：2002-07-02
申请号：US09580130
申请日：2000-05-30
申请人： Gregory G. Freeman , Robert A. Groves , Jeffrey Johnson , Seshadri Subbanna , Richard P. Volant
发明人： Gregory G. Freeman , Robert A. Groves , Jeffrey Johnson , Seshadri Subbanna , Richard P. Volant
IPC分类号： H01L27082
CPC分类号： H01L29/66242 , H01L21/8222 , H01L27/0823
摘要： High frequency performance of transistor designs is enhanced and manufacturing yield improved by removing and reducing sources of parasitic capacitance through combinations of processes from different technologies. After formation of collector, base and emitter regions on a substrate and attachment of a second substrate, the original substrate is wholly or partially removed, the inactive collector area is removed or rendered semi-insulating and wiring and contacts are made from the original back side of the chip. Dielectric material used in the manufacturing process can be removed to further reduce capacitance. The high frequency transistors can be bonded to CMOS chips or wafers to form BICMOS chips.
摘要翻译：提高了晶体管设计的高频性能，并通过不同技术的工艺组合来去除和减少寄生电容源，从而提高了制造成品率。在衬底上形成集电极，基极和发射极区域并附接第二衬底后，原始衬底被全部或部分去除，非活性集电极区域被去除或呈半绝缘，并且布线和接触由原始背面制成的芯片。可以去除在制造过程中使用的介电材料，以进一步降低电容。高频晶体管可以结合到CMOS芯片或晶圆上以形成BICMOS芯片。

6. 发明授权

US07005371B2 Method of forming suspended transmission line structures in back end of line processing 失效
标题翻译：在线路处理后端形成悬挂传输线结构的方法
公开(公告)号：US07005371B2
公开(公告)日：2006-02-28
申请号：US10709357
申请日：2004-04-29
申请人： Anil K. Chinthakindi , Robert A. Groves , Youri V. Tretiakov , Kunal Vaed , Richard P. Volant
发明人： Anil K. Chinthakindi , Robert A. Groves , Youri V. Tretiakov , Kunal Vaed , Richard P. Volant
IPC分类号： H01L21/4763
CPC分类号： H01P11/003 , H01L21/7682 , H01L21/76838 , H01L23/5222 , H01L23/5225 , H01L23/53238 , H01L2223/6622 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/3011 , H01L2924/00
摘要： A method for forming a transmission line structure for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids created by the removal of the portion of the interlevel dielectric layer. A signal transmission line is formed in a second metallization level formed over the interlevel dielectric layer, the signal transmission line being disposed over the sacrificial material. A portion of dielectric material included within the second metallization level is removed so as to expose the sacrificial material, wherein a portion of the sacrificial material is exposed through a plurality of access holes formed through the signal transmission line. The sacrificial material is removed so as to create an air gap beneath the signal transmission line.
摘要翻译：用于形成用于半导体器件的传输线结构的方法包括在第一金属化层上形成层间电介质层，去除层间电介质层的一部分，并在通过去除部分的部分产生的一个或多个空隙内形成牺牲材料层间电介质层。信号传输线形成在层间电介质层上形成的第二金属化层，信号传输线设置在牺牲材料之上。包括在第二金属化水平内的电介质材料的一部分被去除以暴露牺牲材料，其中牺牲材料的一部分通过穿过信号传输线形成的多个访问孔而露出。去除牺牲材料，以在信号传输线下方产生气隙。

7. 发明授权

US06798029B2 Method of fabricating micro-electromechanical switches on CMOS compatible substrates 有权
标题翻译：在CMOS兼容基板上制造微机电开关的方法
公开(公告)号：US06798029B2
公开(公告)日：2004-09-28
申请号：US10434999
申请日：2003-05-09
申请人： Richard P. Volant , John C. Bisson , Donna R. Cote , Timothy J. Dalton , Robert A. Groves , Kevin S. Petrarca , Kenneth J. Stein , Seshadri Subbanna
发明人： Richard P. Volant , John C. Bisson , Donna R. Cote , Timothy J. Dalton , Robert A. Groves , Kevin S. Petrarca , Kenneth J. Stein , Seshadri Subbanna
IPC分类号： H01L2982
CPC分类号： H01H59/0009 , H01H2059/0018 , H01H2059/0072
摘要： A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.
摘要翻译：描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。然后用牺牲脱模材料填充空腔。然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

8. 发明授权

US06701779B2 Perpendicular torsion micro-electromechanical switch 失效
标题翻译：垂直扭转微机电开关
公开(公告)号：US06701779B2
公开(公告)日：2004-03-09
申请号：US10104972
申请日：2002-03-21
申请人： Richard P. Volant , Robert A. Groves , Kevin S. Petrarca , David M. Rockwell , Kenneth J. Stein
发明人： Richard P. Volant , Robert A. Groves , Kevin S. Petrarca , David M. Rockwell , Kenneth J. Stein
IPC分类号： G01P1500
CPC分类号： H01H59/0009 , B81B3/0021 , B81B2201/018 , B81B2203/058 , B81B2207/015 , B81C1/00214 , H01H2001/0068 , H01H2059/0054
摘要： A semiconductor torsional micro-electromechanical (MEM) switch is described having a conductive movable control electrode; an insulated semiconductor torsion beam attached to the movable control electrode, the insulated torsion beam and the movable control electrode being parallel to each other; and a movable contact attached to the insulated torsion beam, wherein the combination of the insulated torsion beam and the control electrode is perpendicular to the movable contact. The torsional MEM switch is characterized by having its control electrodes substantially perpendicular to the switching electrodes. The MEM switch may also include multiple controls to activate the device to form a single-pole, single-throw switch or a multiple-pole, multiple-throw switch. The method of fabricating the torsional MEM switch is fully compatible with the CMOS manufacturing process.
摘要翻译：描述了具有导电可移动控制电极的半导体扭转微机电（MEM）开关; 连接到可移动控制电极的绝缘半导体扭转梁，绝缘扭转梁和可移动控制电极彼此平行; 以及连接到所述绝缘扭力梁的可动触头，其中所述绝缘扭转梁和所述控制电极的组合垂直于所述可动触头。扭转MEM开关的特征在于其控制电极基本上垂直于开关电极。 MEM开关还可以包括多个控制以激活该装置以形成单极单掷开关或多极多掷开关。制造扭转MEM开关的方法与CMOS制造工艺完全兼容。

9. 发明授权

US07053460B2 Multi-level RF passive device 有权
公开(公告)号：US07053460B2
公开(公告)日：2006-05-30
申请号：US10026146
申请日：2001-12-21
申请人： Richard P. Volant , Seshadri Subbanna , Robert A. Groves , John C. Malinowski , Kenneth J. Stein , Kevin S. Petrarca
发明人： Richard P. Volant , Seshadri Subbanna , Robert A. Groves , John C. Malinowski , Kenneth J. Stein , Kevin S. Petrarca
IPC分类号： H01L29/00 , H01L23/48
CPC分类号： H01L23/66 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A passive electrical device includes a first electrical conductor, a second electrical conductor disposed over the first conductor; and a third electrical conductor connecting the first conductor to the second conductor. The said first, second and third conductors are disposed on a semiconductor substrate. The sheet resistivity of the first conductor is approximately equal to the sheet resistivity of the second conductor.

10. 发明授权

US06831542B2 Micro-electromechanical inductive switch 失效
标题翻译：微机电感应开关
公开(公告)号：US06831542B2
公开(公告)日：2004-12-14
申请号：US10248876
申请日：2003-02-26
申请人： Richard P. Volant , John E. Florkey , Robert A. Groves
发明人： Richard P. Volant , John E. Florkey , Robert A. Groves
IPC分类号： H01F2104
CPC分类号： H03K17/965 , H01F7/066 , H01F7/14 , H01F2007/068 , H01H59/0009
摘要： A micro-electro mechanical (MEM) switch capable of inductively coupling and decoupling electrical signals is described. The inductive MEM switch consists of a first plurality of coils on a movable platform and a second plurality of coils on a stationary platform or substrate, the coils on the movable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the movable platform with respect to the coils on the stationary substrate. Diverse arrangements of coils respectively on the movable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.
摘要翻译：描述了能够感应耦合和去耦电信号的微机电（MEM）开关。电感式MEM开关由可移动平台上的第一组多个线圈和固定平台或基板上的第二组线圈构成，可移动平台上的线圈高于或低于固定基板中的线圈。通过旋转或相对于固定基板上的线圈横向移动可移动平台的线圈而发生耦合和解耦。分别在可移动和固定基板上的线圈的不同配置允许多极和多位置的切换配置。所描述的MEM开关消除了开关触点的静电，电弧和焊接的问题。本发明的MEMS开关可以使用标准CMOS技术制造。

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