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81. 发明申请

US20120220085A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，其制造方法以及具有薄膜晶体管的有机发光二极管显示器件
公开(公告)号：US20120220085A1
公开(公告)日：2012-08-30
申请号：US13464697
申请日：2012-05-04
申请人： Joo-Chul YOON , Oh-Seob KWON , Yong-Soo LEE , Su-Bin SONG , Joo-Hwa LEE , Byoung-Keon PARK , Tae-Hoon YANG , Jin-Wook SEO , Ki-Yong LEE
发明人： Joo-Chul YOON , Oh-Seob KWON , Yong-Soo LEE , Su-Bin SONG , Joo-Hwa LEE , Byoung-Keon PARK , Tae-Hoon YANG , Jin-Wook SEO , Ki-Yong LEE
IPC分类号： H01L21/336
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L27/3262
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer. The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及包括TFT的有机发光二极管（OLED）显示装置。 TFT包括具有像素区域和非像素区域的衬底，半导体层，栅极绝缘层，栅极电极和设置在像素区域上的源极和漏极，设置在非像素区域上的至少一个吸杂位置，像素区域和至少一个连接部分，以连接至少一个吸气部位和半导体层。制造TFT的方法包括图案化多晶硅（poly-Si）层以形成多个半导体层，连接部分和至少一个吸杂位点，半导体层通过连接连接到至少一个吸气部位部分，并且对衬底退火以吸收多个半导体层。

82. 发明授权

US08198634B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法以及具有薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08198634B2
公开(公告)日：2012-06-12
申请号：US12641948
申请日：2009-12-18
申请人： Joo-Chul Yoon , Oh-Seob Kwon , Yong-Soo Lee , Su-Bin Song , Joo-Hwa Lee , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee
发明人： Joo-Chul Yoon , Oh-Seob Kwon , Yong-Soo Lee , Su-Bin Song , Joo-Hwa Lee , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee
IPC分类号： H01L33/00
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L27/3262
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及包括TFT的有机发光二极管（OLED）显示装置。 TFT包括具有像素区域和非像素区域的衬底，半导体层，栅极绝缘层，栅极电极和设置在像素区域上的源极和漏极，设置在非像素区域上的至少一个吸杂位置，像素区域和至少一个连接部分，以连接至少一个吸杂位点和半导体层。制造TFT的方法包括图案化多晶硅（poly-Si）层以形成多个半导体层，连接部分和至少一个吸气部位，所述半导体层经由所述连接部与所述至少一个吸杂部位连接，并使所述基板退火以吸收所述多个半导体层。

83. 发明授权

US08159910B2 Apparatus and method for controlling tracking error balance in optical disc apparatus 有权
标题翻译：用于控制光盘装置中的跟踪误差平衡的装置和方法
公开(公告)号：US08159910B2
公开(公告)日：2012-04-17
申请号：US11781744
申请日：2007-07-23
申请人： Ki Yong Lee
发明人： Ki Yong Lee
IPC分类号： G11B15/52
CPC分类号： G11B7/0903 , G11B7/094 , G11B7/0945 , G11B7/126
摘要： A method of controlling a tracking error balance in an optical disc apparatus, and the optical disc apparatus are discussed. In an embodiment of the present invention, when a tracking error balance for writing is controlled, a beam power that is appropriate for the writing characteristics of an optical disc is applied. The beam power can be determined based on the Manufacturer Identifier (MID) of the optical disc and writing power information for different MIDs. The beam power can be determined to be a value of 20 to 50% of the prestored writing power for the MID of the optical disc.
摘要翻译：讨论了一种控制光盘装置中的跟踪误差平衡的方法和光盘装置。在本发明的实施例中，当控制用于写入的跟踪误差平衡时，施加适合于光盘写入特性的光束功率。可以基于光盘的制造商标识符（MID）和不同的MID的写入功率信息来确定光束功率。光束功率可以被确定为光盘的MID的预存的写入功率的20至50％的值。

84. 发明申请

US20120049199A1 Method of forming polycrystalline silicon layer, method of manufacturing thin film transistor including the method, thin-film transistor manufactured by using the method of manufacturing thin-film transistor, and organic light-emitting display device including the thin-film transistor 审中-公开
标题翻译：形成多晶硅层的方法，包括该方法的薄膜晶体管的制造方法，使用薄膜晶体管的制造方法制造的薄膜晶体管以及包括该薄膜晶体管的有机发光显示装置
公开(公告)号：US20120049199A1
公开(公告)日：2012-03-01
申请号：US13137428
申请日：2011-08-15
申请人： Yun-Mo Chung , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Seung-Kyu Park , Yong-Duck Son , Byung-Soo So , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Tak-Young Lee , Jong-Ryuk Park
发明人： Yun-Mo Chung , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Seung-Kyu Park , Yong-Duck Son , Byung-Soo So , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Tak-Young Lee , Jong-Ryuk Park
IPC分类号： H01L21/20 , H01L29/04 , H01L33/16 , H01L29/786 , H01L21/336
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1218 , H01L27/1277 , H01L27/3262 , H01L29/78603
摘要： A method of forming a polycrystalline layer includes forming a buffer layer on a substrate; treating the buffer layer with hydrogen plasma; forming an amorphous silicon layer on the buffer layer; forming a metallic catalyst layer for crystallizing the amorphous silicon layer on the amorphous silicon layer; and heat treating the amorphous silicon layer to form a polycrystalline silicon layer.
摘要翻译：形成多晶层的方法包括在基板上形成缓冲层; 用氢等离子体处理缓冲层; 在缓冲层上形成非晶硅层; 形成用于使非晶硅层上的非晶硅层结晶的金属催化剂层; 并且对非晶硅层进行热处理以形成多晶硅层。

85. 发明授权

US08103309B2 Multimode mobile terminal and self-sim configuration method thereof 有权
标题翻译：多模移动终端及其自身配置方法
公开(公告)号：US08103309B2
公开(公告)日：2012-01-24
申请号：US12252685
申请日：2008-10-16
申请人： Ki Yong Lee
发明人： Ki Yong Lee
IPC分类号： H04B1/38
CPC分类号： H04W8/183 , H04M1/72519 , H04M2250/14 , H04W8/22 , H04W12/08 , H04W88/06
摘要： A multiple mode multiple standby mobile terminal and self configuration method of the mobile terminal are provided for automatically configuring settings on multiple Subscriber Identity Module (SIM) cards. An identity module configuration method for a multiple mode multiple standby mobile terminal includes checking, when the mobile terminal powers on, reference identity information in the mobile terminal, determining whether identity information contained in an identity card attached to the mobile terminal is included in the reference identity information and establishing, when the identity information is included in the reference identity information, a connection to a communication network indicated by the identity information.
摘要翻译：提供移动终端的多模式多待机移动终端和自配置方法，用于自动配置多个用户识别模块（SIM）卡上的设置。用于多模式多待机移动终端的身份模块配置方法包括：当移动终端上电时，检查移动终端中的参考身份信息，确定包含在附加到移动终端的身份卡中的身份信息是否包括在参考中身份信息，并且当身份信息被包括在参考身份信息中时，建立与由身份信息指示的通信网络的连接。

86. 发明授权

US08048783B2 Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same 有权
标题翻译：形成多晶硅层的方法和用于其的原子层沉积装置
公开(公告)号：US08048783B2
公开(公告)日：2011-11-01
申请号：US12714252
申请日：2010-02-26
申请人： Yun-Mo Chung , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
发明人： Yun-Mo Chung , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , C23C14/04 , H01L21/02422 , H01L21/02488 , H01L21/02672
摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
摘要翻译：一种形成多晶硅层的方法和用于其的原子层沉积装置。该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

87. 发明申请

US20110263107A1 METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER AND ATOMIC LAYER DEPOSITION APPARATUS USED FOR THE SAME 有权
标题翻译：形成多晶硅层的方法和用于其的原子沉积沉积装置
公开(公告)号：US20110263107A1
公开(公告)日：2011-10-27
申请号：US13177936
申请日：2011-07-07
申请人： Yun-Mo CHUNG , Ki-Yong LEE , Min-Jae JEONG , Jin-Wook SEO , Jong-Won HONG , Heung-Yeol NA , Eu-Gene KANG , Seok-Rak CHANG , Tae-Hoon YANG , Ji-Su AHN , Young-Dae KIM , Byoung-Keon PARK , Kil-Won LEE , Dong-Hyun LEE , Sang-Yon YOON , Jong-Ryuk PARK , Bo-Kyung CHOI , Maxim LISACHENKO
发明人： Yun-Mo CHUNG , Ki-Yong LEE , Min-Jae JEONG , Jin-Wook SEO , Jong-Won HONG , Heung-Yeol NA , Eu-Gene KANG , Seok-Rak CHANG , Tae-Hoon YANG , Ji-Su AHN , Young-Dae KIM , Byoung-Keon PARK , Kil-Won LEE , Dong-Hyun LEE , Sang-Yon YOON , Jong-Ryuk PARK , Bo-Kyung CHOI , Maxim LISACHENKO
IPC分类号： H01L21/20 , C23C16/48 , C23C16/455 , C23C16/24 , C23C16/04
CPC分类号： H01L21/02532 , C23C14/04 , H01L21/02422 , H01L21/02488 , H01L21/02672
摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
摘要翻译：一种形成多晶硅层的方法和用于其的原子层沉积装置。该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

88. 发明申请

US20110248277A1 METHOD OF CRYSTALIZING AMORPHOUS SILICON LAYER, METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE SAME, AND THIN FILM TRANSISTOR USING THE MANUFACTURING METHOD 审中-公开
标题翻译：非晶硅层的晶体化方法，使用其制造薄膜晶体管的方法和使用制造方法的薄膜晶体管
公开(公告)号：US20110248277A1
公开(公告)日：2011-10-13
申请号：US12975809
申请日：2010-12-22
申请人： Dong-Hyun LEE , Ki-Yong LEE , Jin-Wook Seo , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Kil-Won Lee , Yun-Mo Chung , Byoung-Keon Park , Jong-Ryuk Park , Tak-Young Lee , Jae-Wan Jung
发明人： Dong-Hyun LEE , Ki-Yong LEE , Jin-Wook Seo , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Kil-Won Lee , Yun-Mo Chung , Byoung-Keon Park , Jong-Ryuk Park , Tak-Young Lee , Jae-Wan Jung
IPC分类号： H01L27/12 , H01L21/20 , H01L21/84
CPC分类号： H01L21/02532 , H01L21/02488 , H01L21/02672 , H01L27/1277 , H01L29/66757 , H01L29/66765
摘要： A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystallization catalyst particles on the amorphous silicon layer to be separated from each other; selectively removing the crystallization catalyst particles from a portion of the amorphous silicon layer; and crystallizing the amorphous silicon layer by a heat treatment.
摘要翻译：一种使非晶硅层结晶的方法，使用其的薄膜晶体管的制造方法和使用该制造方法的薄膜晶体管，所述结晶方法包括：形成非晶硅层; 将结晶催化剂颗粒定位在待分离的非晶硅层上; 从非晶硅层的一部分选择性地除去结晶催化剂颗粒; 并通过热处理使非晶硅层结晶。

89. 发明申请

US20110233529A1 Substrate including thin film transistor, method of manufacturing the substrate, and organic light emitting display apparatus including the substrate 有权
标题翻译：包括薄膜晶体管的基板，制造基板的方法以及包括该基板的有机发光显示装置
公开(公告)号：US20110233529A1
公开(公告)日：2011-09-29
申请号：US12929694
申请日：2011-02-09
申请人： Yun-Mo Chung , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Tak-Young Lee , Jong-Ryuk Park , Jae-Wan Jung
发明人： Yun-Mo Chung , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Tak-Young Lee , Jong-Ryuk Park , Jae-Wan Jung
IPC分类号： H01L51/52 , H01L29/786 , H01L21/336
CPC分类号： H01L29/66742 , H01L27/124 , H01L27/1248 , H01L27/3262 , H01L27/3274 , H01L29/66757 , H01L29/78618 , H01L51/0081
摘要： A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.
摘要翻译：一种包括薄膜晶体管的基板，所述基板包括设置在所述基板上的有源层，所述有源层包括沟道区域和源极和漏极区域，设置在所述有源层上的栅极电极，对应于所述栅电极的沟道区域，插入在有源层和栅电极之间的栅极绝缘层，设置成覆盖有源层和栅电极的层间绝缘层，具有部分地暴露有源层的第一和第二接触孔的层间绝缘层，设置的源极和漏极在层间绝缘层上，对应于源极和漏极以及欧姆接触层的源极和漏极区域，欧姆接触层介于层间绝缘层和源极和漏极之间，并且使源极和漏极区域通过第一和第二接触孔。

90. 发明授权

US07999261B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the TFT 有权
标题翻译：薄膜晶体管，其制造方法以及具有该TFT的有机发光二极管显示装置
公开(公告)号：US07999261B2
公开(公告)日：2011-08-16
申请号：US12357513
申请日：2009-01-22
申请人： Ji-Su Ahn , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Kil-Won Lee , Ki-Yong Lee , Sung-Chul Kim
发明人： Ji-Su Ahn , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Kil-Won Lee , Ki-Yong Lee , Sung-Chul Kim
IPC分类号： H01L29/10
CPC分类号： H01L29/458 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/66765
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer and crystallized using a metal catalyst, and source and drain electrodes disposed on the semiconductor layer and electrically connected to source and drain regions of the semiconductor layer. A second metal is diffused into a surface region of the semiconductor layer, to getter the metal catalyst from a channel region of the semiconductor layer. The second metal can have a lower diffusion coefficient in silicon than the metal catalyst.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及具有TFT的有机发光二极管（OLED）显示装置，TFT包括基板，设置在基板上的栅极电极，设置在基板上的栅极绝缘层栅电极，设置在栅绝缘层上并使用金属催化剂结晶的半导体层，以及设置在半导体层上并电连接到半导体层的源极和漏极区的源极和漏极。第二金属被扩散到半导体层的表面区域中，以从半导体层的沟道区域吸收金属催化剂。第二种金属在硅中的扩散系数可以低于金属催化剂。

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