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71. 发明授权

US4568397A Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials 失效
标题翻译： II-VI族半导体材料的金属有机气相外延生长
公开(公告)号：US4568397A
公开(公告)日：1986-02-04
申请号：US649650
申请日：1984-09-12
申请人： William E. Hoke , Richard Traczewski , Peter J. Lemonias
发明人： William E. Hoke , Richard Traczewski , Peter J. Lemonias
IPC分类号： C30B25/02 , H01L21/365 , H01L31/00
CPC分类号： H01L21/02395 , C30B25/02 , C30B29/48 , H01L21/02398 , H01L21/02411 , H01L21/0248 , H01L21/02562 , H01L21/0262 , Y10S148/063 , Y10S148/064 , Y10S148/08 , Y10S148/11
摘要： A method for growing a Group II-VI epitaxial layer on a substrate, said epitaxial layer having an electron mobility greater than 1.5.times.10.sup.5 cm.sup.2 /V-sec at 77.degree. K. and a carrier concentration less than 4.times.10.sup.15 (cm.sup.-3) is described. The method includes the steps of directing a plurality of vapor flows towards the substrate including a Group II metalorganic vapor having a mole fraction in the range of 3.0.times.10.sup.-4 to 4.5.times.10.sup.-4, a Group VI metalorganic vapor having a mole fraction in the range of 2.9.times.10.sup.-3 to 3.5.times.10.sup.-3 and a Group II elemental metal vapor having a mole fraction in the range of 2.6.times.10.sup.-2 to 3.2.times.10.sup.-2. The source of Group II metal is heated to at least 240.degree. C. while radiant energy is directed toward the reactor vessel to warm the zone of the reactor vessel between the Group II metal source and the substrate to at least 240.degree. C. The directed flows of Group II metalorganic vapor, Group VI metalorganic vapor and Group II metal vapor then chemically react to form the epitaxial layer.
摘要翻译：一种用于在衬底上生长II-VI族外延层的方法，所述外延层在77°K具有大于1.5×10 5 cm 2 / V·sec的电子迁移率，并且载流子浓度小于4×10 15（cm -3））。该方法包括以下步骤：将多个蒸气流引向基材，包括摩尔分数在3.0×10 -4至4.5×10 -4范围内的第II族金属有机蒸汽，第VI族金属有机蒸气的摩尔分数在范围为2.9×10 -3至3.5×10 -3，以及摩尔分数在2.6×10 -2至3.2×10 -2范围内的II族元素金属蒸气。将II族金属的来源加热至至少240℃，同时将辐射能量指向反应器容器以将第II族金属源和基底之间的反应器容器区域加热至至少240℃。定向第II族金属有机蒸气，第VI族金属有机蒸气和第II族金属蒸气的流动然后化学反应形成外延层。

72. 发明授权

US4147571A Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system 失效
标题翻译：在热壁系统中利用有机金属化合物和卤素或卤化物气相外延沉积III / V材料的方法
公开(公告)号：US4147571A
公开(公告)日：1979-04-03
申请号：US814247
申请日：1977-07-11
申请人： Gerald B. Stringfellow , Howard T. Hall, Jr.
发明人： Gerald B. Stringfellow , Howard T. Hall, Jr.
IPC分类号： C01G28/00 , C30B25/02 , C30B29/40 , H01L21/205 , H01L21/322
CPC分类号： C30B25/02 , C30B29/40 , Y10S148/056 , Y10S148/065 , Y10S148/11
摘要： A process is provided for the VPE growth of III/V compounds such as Al.sub.x Ga.sub.1-x As in which the group III elements are transported into the reaction zone in the form of organometallic compounds in the presence of a gaseous halogen or hydrogen halide such as hydrogen chloride (HCl).
摘要翻译：提供了一种用于III / V化合物如Al x Ga 1-x As的VPE生长的方法，其中III族元素以有机金属化合物的形式在气态卤素或卤化氢如氯化氢存在下输送到反应区（HCl）。

73. 发明授权

US5284791A Method of making tunable semiconductor laser 失效
标题翻译：制造可调谐半导体激光器的方法
公开(公告)号：US5284791A
公开(公告)日：1994-02-08
申请号：US926240
申请日：1992-08-06
申请人： Yasutaka Sakata , Masayuki Yamaguchi , Tatsuya Sasaki
发明人： Yasutaka Sakata , Masayuki Yamaguchi , Tatsuya Sasaki
IPC分类号： H01S5/00 , H01S5/042 , H01S5/062 , H01S5/10 , H01S5/227 , H01L21/20
CPC分类号： H01L33/0062 , H01S5/06206 , H01S5/227 , H01S5/2272 , Y10S148/095 , Y10S148/11
摘要： In a method of making a tunable twin guide (TTG) type tunable semiconductor laser, over the surface of a semiconductor substrate of one conductivity type, an active layer, a central layer of the opposite conductivity type, and a tuning layer, each being stripe-shaped and overlying the top of the preceding one is provided. This method is characterized in that the processing of semiconductor elements for defining the current path/optical waveguide inside the laser is carried out not by etching but by using selective epitaxy method such as metal organic vapor phase epitaxy (MOVPE). The use of selective MOVPE permits to form stripe-shaped layers at high precision and good uniformity, with consequent effects of minimizing scattering of laser light, increasing the efficiency of the drive power to laser light output conversion and enhancing the coupling efficiency with optical fibers. Besides thinner central layer that can be formed can contributes to enlarging the tunable bandwidth of laser light.
摘要翻译：在制造可调双引导（TTG）型可调谐半导体激光器的方法中，在一种导电类型的半导体衬底的表面上，有源层，相反导电类型的中心层和调谐层并提供了上述的顶部。该方法的特征在于，用于限定激光器内的电流路径/光波导的半导体元件的处理不是通过蚀刻而是通过使用诸如金属有机气相外延（MOVPE）的选择性外延法来进行的。选择性MOVPE的使用允许以高精度和良好的均匀性形成条状层，从而使激光的散射最小化，提高激光功率对激光输出转换的效率以及增强与光纤的耦合效率的效果。除了可以形成的更薄的中心层可以有助于扩大激光的可调带宽。

74. 发明授权

US5256595A Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor 失效
标题翻译：在热壁反应器中使用有机金属前体将器件质量InP增加到InP衬底上的方法
公开(公告)号：US5256595A
公开(公告)日：1993-10-26
申请号：US19508
申请日：1993-02-19
申请人： Joseph R. Flemish , Kenneth A. Jones , Vladimir S. Ban
发明人： Joseph R. Flemish , Kenneth A. Jones , Vladimir S. Ban
IPC分类号： H01L21/205
CPC分类号： H01L21/02392 , H01L21/02543 , H01L21/0262 , Y10S148/11
摘要： An organometallic precursor as for example trimethyl indium (TMI) is co-injected with HCl into a hot wall reactor to form volatile InCl, and PH.sub.3 is used as the phosphorus source. Layers of InP are grown at approximately 8 .mu.m/hr with excellent morphology and good electrical properties. Hall measurements at 77K show background n-type conductivity with n=7.times.10.sup.15 /cm.sup.3 and .mu..sup.S 34,000 cm.sub.2 /V-s. The method is capable of growing ternary and quaternary heterostructures with thin layers and abrupt junctions.
摘要翻译：将有机金属前体，例如三甲基铟（TMI）与HCl共注入到热壁反应器中以形成挥发性InCl，并且使用PH 3作为磷源。 InP层以约8μm/ hr生长，具有优异的形态和良好的电性能。在77K的霍尔测量显示n = 7×10 15 / cm 3和mu S 34,000cm 2 / V-s的背景n型导电性。该方法能够生长具有薄层和突变结的三元和四元异质结构。

75. 发明授权

US5232873A Method of fabricating contacts for semiconductor devices 失效
标题翻译：制造半导体器件触点的方法
公开(公告)号：US5232873A
公开(公告)日：1993-08-03
申请号：US960526
申请日：1992-10-13
申请人： Michael Geva , Avishay Katz
发明人： Michael Geva , Avishay Katz
IPC分类号： H01L21/28 , H01L21/223 , H01L21/285 , H01L29/43
CPC分类号： H01L21/285 , H01L21/2233 , H01L21/28575 , Y10S148/11
摘要： A semiconductor device substrate has a major surface on which is located an insulating layer, such as silicon dioxide, having an aperture penetrating through it all the way down to the major surface. An impurity-doped plug, such as tungsten doped with zinc, is spatially selectively deposited in the aperture to a thickness such that the height of the plug is significantly less than the height of the aperture in the insulating layer, by means of a rapid-thermal-cycle low-pressure-metalorganic-chemical vapor deposition (RTC-LP-MOCVD) process. Then another plug, of (pure) conductive barrier metal such as tungsten, is deposited on at least the entire top surface of the impurity-doped plug and on the sidewalls of the insulating layer. The structure being fabricated can then be heated, in order to diffuse the impurity into the underlying semiconductor device substrate. A metallization layer such as titanium/platinum/gold can be deposited on the (pure) conductive barrier metal and patterned, in order to supply a desired access metallization for the device.

76. 发明授权

US4946802A Semiconductor laser device fabricating method 失效
标题翻译：半导体激光器件制造方法
公开(公告)号：US4946802A
公开(公告)日：1990-08-07
申请号：US273393
申请日：1988-11-18
申请人： Akihiro Shima , Wataru Susaki
发明人： Akihiro Shima , Wataru Susaki
IPC分类号： H01S5/10 , H01S5/16 , H01S5/22 , H01S5/223
CPC分类号： H01S5/16 , H01S5/1064 , H01S5/2201 , H01S5/2232 , H01S5/2235 , Y10S148/095 , Y10S148/11
摘要： A high-power AlGaAs/GaAs laser device comprises: a ridge formed on the top surface of a substrate from one end to the opposite end, thereof wherein the width of the ridge is made narrower in regions near both the ends and wider in a middle region; a depression is formed in the wider region of the ridge; a clad layer is grown epitaxially over the top surface of the substrate; and an active layer is grown epitaxially on the clad layer, wherein the thickness of the active layer is thinner in portions just above the narrower ridge regions and relatively thicker in a portion just above the wider ridge region.
摘要翻译：高功率AlGaAs / GaAs激光器件包括：从一端到另一端形成在衬底顶表面上的脊，其中脊的宽度在两个端部附近的区域中较窄并且在中间较宽地区; 在山脊的较宽区域形成凹陷; 包覆层在衬底的顶表面上外延生长; 并且在包覆层上外延生长活性层，其中有源层的厚度在较窄脊区域正上方的部分更薄，并且在较宽脊区域正上方的部分中相对较厚。

77. 发明授权

US4859625A Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy 失效
标题翻译：使用具有分子层外延的MOCVD外延生长化合物半导体的方法
公开(公告)号：US4859625A
公开(公告)日：1989-08-22
申请号：US123497
申请日：1987-11-20
申请人： Fumio Matsumoto
发明人： Fumio Matsumoto
IPC分类号： H01L29/812 , C30B25/02 , C30B25/14 , H01L21/205 , H01L21/263 , H01L21/338 , H01L21/365 , H01L29/778
CPC分类号： C30B25/02 , C30B29/40 , C30B29/68 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S148/025 , Y10S148/041 , Y10S148/048 , Y10S148/057 , Y10S148/072 , Y10S148/094 , Y10S148/11 , Y10S438/935
摘要： A method for epitaxial growth of compound semiconductor containing three component elements, two component elements thereof being the same group elements, in which three kinds of compound gases each containing different one of the three component elements are cyclically introudced, under a predetermined pressure for a predetermined period respectively, onto a substrate enclosed in an evacuated crystal growth vessel so that a single crystal thin film of the compound semiconductor is formed on the substrate.
摘要翻译：一种包含三组分元素的化合物半导体的外延生长方法，其两个组分元素是相同的组元素，其中三种组分元素中的不同一种的三种化合物气体在预定压力下循环地覆盖预定的周期分别放置在封装在真空的晶体生长容器中的基板上，使得在基板上形成化合物半导体的单晶薄膜。

78. 发明授权

US4855250A Method of manufacturing a semiconductor laser with autodoping control 失效
标题翻译：制造具有自动掺杂控制的半导体激光器的方法
公开(公告)号：US4855250A
公开(公告)日：1989-08-08
申请号：US138660
申请日：1987-12-28
申请人： Motoyuki Yamamoto , Yasuhiko Tsuburai
发明人： Motoyuki Yamamoto , Yasuhiko Tsuburai
IPC分类号： H01L21/20 , H01L21/205 , H01L33/14 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/223
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02494 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0025 , H01L33/0062 , H01S5/2231 , Y10S148/007 , Y10S148/041 , Y10S148/056 , Y10S148/072 , Y10S148/095 , Y10S148/11 , Y10S438/916
摘要： A method of manufacturing a semiconductor light emitting device by forming a compound semiconductor structure with homo- or heterojunction therein having a first p-type compound semiconductor crystal layer at the top of the structure, growing a second p-type compound semiconductor crystal layer on the structure in a reactor, wherein, before the beginning of the crystal growth step, a p-type dopant is caused to flow into the reactor in which the structure is placed. In some embodiments, the flow of the p-type dopant continues after the completion of the crystal growth.
摘要翻译：一种半导体发光器件的制造方法，其通过在其结构的顶部形成具有第一p型化合物半导体晶体层的均匀或异质结的化合物半导体结构，在第二p型化合物半导体晶体层上生长第二p型化合物半导体晶体层反应器中的结构，其中在晶体生长步骤开始之前，使p型掺杂剂流入其中放置结构的反应器。在一些实施例中，p型掺杂剂的流动在晶体生长完成之后继续。

79. 发明授权

US4845049A Doping III-V compound semiconductor devices with group VI monolayers using ALE 失效
标题翻译：掺杂III-V化合物半导体器件，使用ALE的VI组单层
公开(公告)号：US4845049A
公开(公告)日：1989-07-04
申请号：US173808
申请日：1988-03-28
申请人： Haruo Sunakawa
发明人： Haruo Sunakawa
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/0262 , H01L21/02395 , H01L21/02463 , H01L21/02499 , H01L21/02546 , H01L21/02576 , H01L21/02584 , Y10S148/04 , Y10S148/065 , Y10S148/11
摘要： An n-type III-V compound semiconductor comprises a plurality of monolayers of III-V compound semiconductor molecules having a layer-by-layer structure of group III element and group V element laminated alternately, and a group VI element-doped monolayer. The group VI element-doped monolayer is inserted into the III-V compound semiconductor molecules by occupying lattice points which were occupied by the group V element. The layers of the semiconductor are grown by Atomic Layer Epitaxy process.
摘要翻译： n型III-V族化合物半导体包括具有交替层叠的III族元素和V族元素的层叠结构的III-V族化合物半导体分子的多个单层和VI族元素掺杂单层。通过占据由V族元素占据的晶格点，将VI族元素掺杂单层插入到III-V族化合物半导体分子中。通过原子层外延工艺生长半导体层。

80. 发明授权

US4829020A Substrate solder barriers for semiconductor epilayer growth 失效
标题翻译：用于半导体外延层生长的衬底焊料屏障
公开(公告)号：US4829020A
公开(公告)日：1989-05-09
申请号：US111488
申请日：1987-10-23
申请人： Timothy J. Drummond , David S. Ginley , Thomas E. Zipperian
发明人： Timothy J. Drummond , David S. Ginley , Thomas E. Zipperian
IPC分类号： C30B23/02
CPC分类号： C30B23/02 , Y10S148/003 , Y10S148/012 , Y10S148/065 , Y10S148/11 , Y10S438/974 , Y10T428/12576
摘要： During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.
摘要翻译：在通过外延工艺生长化合物半导体期间，通常将基底安装到载体上。在模块化射束外延下，使用铟作为焊料进行安装。该方法具有两个缺点：铟与基板反应，并且难以均匀地湿润大直径基板的背面。通过用碳化钨或碳化钨和金的薄层溅射涂覆基板的背面已经成功地克服了这两个问题。除了与高质量半导体外延层的生长相容外，该涂层在用于化合物半导体的所有标准基板清洗蚀刻剂中也是惰性的，并且在辐射加热中提供均匀的能量分布。

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