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1. 发明授权

US4568397A Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials 失效
标题翻译： II-VI族半导体材料的金属有机气相外延生长
公开(公告)号：US4568397A
公开(公告)日：1986-02-04
申请号：US649650
申请日：1984-09-12
申请人： William E. Hoke , Richard Traczewski , Peter J. Lemonias
发明人： William E. Hoke , Richard Traczewski , Peter J. Lemonias
IPC分类号： C30B25/02 , H01L21/365 , H01L31/00
CPC分类号： H01L21/02395 , C30B25/02 , C30B29/48 , H01L21/02398 , H01L21/02411 , H01L21/0248 , H01L21/02562 , H01L21/0262 , Y10S148/063 , Y10S148/064 , Y10S148/08 , Y10S148/11
摘要： A method for growing a Group II-VI epitaxial layer on a substrate, said epitaxial layer having an electron mobility greater than 1.5.times.10.sup.5 cm.sup.2 /V-sec at 77.degree. K. and a carrier concentration less than 4.times.10.sup.15 (cm.sup.-3) is described. The method includes the steps of directing a plurality of vapor flows towards the substrate including a Group II metalorganic vapor having a mole fraction in the range of 3.0.times.10.sup.-4 to 4.5.times.10.sup.-4, a Group VI metalorganic vapor having a mole fraction in the range of 2.9.times.10.sup.-3 to 3.5.times.10.sup.-3 and a Group II elemental metal vapor having a mole fraction in the range of 2.6.times.10.sup.-2 to 3.2.times.10.sup.-2. The source of Group II metal is heated to at least 240.degree. C. while radiant energy is directed toward the reactor vessel to warm the zone of the reactor vessel between the Group II metal source and the substrate to at least 240.degree. C. The directed flows of Group II metalorganic vapor, Group VI metalorganic vapor and Group II metal vapor then chemically react to form the epitaxial layer.
摘要翻译：一种用于在衬底上生长II-VI族外延层的方法，所述外延层在77°K具有大于1.5×10 5 cm 2 / V·sec的电子迁移率，并且载流子浓度小于4×10 15（cm -3））。该方法包括以下步骤：将多个蒸气流引向基材，包括摩尔分数在3.0×10 -4至4.5×10 -4范围内的第II族金属有机蒸汽，第VI族金属有机蒸气的摩尔分数在范围为2.9×10 -3至3.5×10 -3，以及摩尔分数在2.6×10 -2至3.2×10 -2范围内的II族元素金属蒸气。将II族金属的来源加热至至少240℃，同时将辐射能量指向反应器容器以将第II族金属源和基底之间的反应器容器区域加热至至少240℃。定向第II族金属有机蒸气，第VI族金属有机蒸气和第II族金属蒸气的流动然后化学反应形成外延层。

2. 发明授权

US06489639B1 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US06489639B1
公开(公告)日：2002-12-03
申请号：US09577508
申请日：2000-05-24
申请人： William E. Hoke , Peter J. Lemonias , Theodore D. Kennedy
发明人： William E. Hoke , Peter J. Lemonias , Theodore D. Kennedy
IPC分类号： H01L310328
CPC分类号： H01L29/66462 , H01L21/28587 , H01L29/205 , H01L29/7785
摘要： A semiconductor structure, e.g., a high electron mobility transistor structure, is formed by using metamorphic growth and strain compensation. The structure includes a substrate, a graded layer over the substrate, a first donor/barrier layer over the graded layer, and a channel layer over the first donor/barrier layer. The substrate has a substrate lattice constant, and the graded layer has a graded lattice constant. The graded layer has a first lattice constant near a bottom of the graded layer substantially equal to the substrate lattice constant and a second lattice constant near a top of the graded layer different than the first lattice constant. The first donor/barrier layer has a third lattice constant, and the channel layer has a fourth lattice constant. The second lattice constant is intermediate the third and fourth lattice constants.
摘要翻译：通过使用变质生长和应变补偿形成半导体结构，例如高电子迁移率晶体管结构。该结构包括衬底，衬底上的渐变层，梯度层上的第一施主/势垒层，以及在第一施主/阻挡层上的沟道层。衬底具有衬底晶格常数，并且渐变层具有梯度晶格常数。渐变层在梯度层的底部附近具有基本上等于衬底晶格常数的第一晶格常数，并且在渐变层的顶部附近的第二晶格常数不同于第一晶格常数。第一施主/势垒层具有第三晶格常数，沟道层具有第四晶格常数。第二晶格常数在第三和第四晶格常数之间。

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