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1. 发明授权

US5256595A Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor 失效
标题翻译：在热壁反应器中使用有机金属前体将器件质量InP增加到InP衬底上的方法
公开(公告)号：US5256595A
公开(公告)日：1993-10-26
申请号：US19508
申请日：1993-02-19
申请人： Joseph R. Flemish , Kenneth A. Jones , Vladimir S. Ban
发明人： Joseph R. Flemish , Kenneth A. Jones , Vladimir S. Ban
IPC分类号： H01L21/205
CPC分类号： H01L21/02392 , H01L21/02543 , H01L21/0262 , Y10S148/11
摘要： An organometallic precursor as for example trimethyl indium (TMI) is co-injected with HCl into a hot wall reactor to form volatile InCl, and PH.sub.3 is used as the phosphorus source. Layers of InP are grown at approximately 8 .mu.m/hr with excellent morphology and good electrical properties. Hall measurements at 77K show background n-type conductivity with n=7.times.10.sup.15 /cm.sup.3 and .mu..sup.S 34,000 cm.sub.2 /V-s. The method is capable of growing ternary and quaternary heterostructures with thin layers and abrupt junctions.
摘要翻译：将有机金属前体，例如三甲基铟（TMI）与HCl共注入到热壁反应器中以形成挥发性InCl，并且使用PH 3作为磷源。 InP层以约8μm/ hr生长，具有优异的形态和良好的电性能。在77K的霍尔测量显示n = 7×10 15 / cm 3和mu S 34,000cm 2 / V-s的背景n型导电性。该方法能够生长具有薄层和突变结的三元和四元异质结构。

2. 发明授权

US5254210A Method and apparatus for growing semiconductor heterostructures 失效
标题翻译：用于生长半导体异质结构的方法和装置
公开(公告)号：US5254210A
公开(公告)日：1993-10-19
申请号：US874779
申请日：1992-04-27
申请人： Kenneth A. Jones , Joseph R. Flemish , Alok Tripathi , Vladimir S. Ban
发明人： Kenneth A. Jones , Joseph R. Flemish , Alok Tripathi , Vladimir S. Ban
IPC分类号： C23C16/30 , C23C16/455 , C30B25/02 , C30B25/18 , C23C16/00
CPC分类号： C30B25/02 , C23C16/301 , C23C16/455 , C23C16/45561 , C30B25/18 , C30B29/40
摘要： A conventional hydride VPE reactor is modified by the addition of a gas switching manifold and the use of three way pneumatic valves in the manifold to alternately direct the flow of reactant gas mixtures into either the reactor or a vent line. With these additions, various predetermined gas mixtures of arsine, phosphine, and hydrogen selected by electronic mass flow controllers (GM1 and GM2) and predetermined gas mixtures of H.sub.2 and HCl (GM3) may be alternately infused into the reactor chamber or vented as desired. When GM3 is injected into the reactor chamber, the content of GaAs of the growing layer increases while the content of In decreases. Given this, when GM3 and GM2 are vented rather than injected into the furnace and GM1 is directed into the furnace, a layer of InGaAsP with a predetermined composition (A) will be deposited. Alternatively, when GM3 and GM2 are co-injected into the reactor and GM1 is be directed to the vent, a layer of InGaAsP of a predetermined composition (B) will be deposited. Therefore, the flow rates of HCl, PH.sub.3 and AsH.sub.3 can be adjusted to produce compositions A and B that correspond to a lattice-matched condition with either InP or GaAs substrate.
摘要翻译：传统的氢化物VPE反应器通过添加气体切换歧管和在歧管中使用三通气动阀来交替地将反应气体混合物的流动引导到反应器或排气管线中来进行修改。通过这些添加，可以将电子质量流量控制器（GM1和GM2）选择的各种预定的胂，膦和氢的气体混合物和H 2和HCl（GM 3）的预定气体混合物交替地输入到反应器室中或根据需要排气。当GM3被注入到反应器室中时，生长层的GaAs含量增加，而In的含量减少。考虑到这一点，当GM3和GM2排放而不是注入炉中，GM1被引入炉中时，将沉积具有预定组成（A）的InGaAsP层。或者，当将GM3和GM2共注入到反应器中并且GM1被引导到排气口时，将沉积预定组成（B）的InGaAsP层。因此，可以调节HCl，PH3和AsH3的流量，以产生与InP或GaAs衬底的晶格匹配条件相对应的组分A和B.

3. 发明授权

US6159884A Method of annealing silicon carbide for activation of ion-implanted dopants 失效
标题翻译：碳化硅退火方法用于离子注入掺杂剂的激活
公开(公告)号：US6159884A
公开(公告)日：2000-12-12
申请号：US356817
申请日：1999-07-19
申请人： Joseph R. Flemish , Honghua Du
发明人： Joseph R. Flemish , Honghua Du
IPC分类号： H01L21/00 , H01L21/04 , C04B35/569 , B23K10/00
CPC分类号： H01L21/67109 , H01L21/046
摘要： A method and crucible for annealing SiC at high temperatures. The crucibles a vessel having a peripheral wall, at least two compartments separated by an inner wall within the peripheral wall and a lid which separates the compartments from the crucible surroundings while providing a passageway between the compartments. The peripheral wall, inner wall and lid are composed of materials capable of withstanding annealing temperatures. The process disposes an SiC wafer in one of the compartments and SiC powder disposed in another of the compartments. The SiC powder is present to hinder SiC wafer decomposition during annealing of the SiC wafer. The crucible is then heated to a temperature sufficient anneal the SiC wafer, preferably after evacuating air and flowing an inert gas in and around the crucible.
摘要翻译：一种用于在高温下退火SiC的方法和坩埚。坩埚是具有周壁的容器，至少两个由周壁内的内壁隔开的隔间，以及隔室与坩埚周围隔开的盖，同时在隔室之间提供通道。周壁，内壁和盖由能够承受退火温度的材料组成。该方法在其中一个隔室中设置SiC晶片，并将SiC粉末设置在另一个隔室中。存在SiC粉末以阻止SiC晶片退火期间的SiC晶片分解。然后将坩埚加热至足以使SiC晶片退火的温度，优选在排空空气并使惰性气体在坩埚内和周围流动。

4. 发明授权

US5981900A Method of annealing silicon carbide for activation of ion-implanted dopants 失效
公开(公告)号：US5981900A
公开(公告)日：1999-11-09
申请号：US657136
申请日：1996-06-03
申请人： Joseph R. Flemish , Honghua Du
发明人： Joseph R. Flemish , Honghua Du
IPC分类号： H01L21/00 , H01L21/04 , B23K10/00
CPC分类号： H01L21/67109 , H01L21/046
摘要： A method and crucible for annealing SiC at high temperatures. The crucible is a vessel having a peripheral wall, at least two compartments separated by an inner wall within the peripheral wall and a lid which separates the compartments from the crucible surroundings while providing a passageway between the compartments. The peripheral wall, inner wall and lid are composed of materials capable of withstanding annealing temperatures. The process disposes an SiC wafer in one of the compartments and SiC powder disposed in another of the compartments. The SiC powder is present to hinder SiC wafer decomposition during annealing of the SiC wafer. The crucible is then heated to a temperature sufficient anneal the SiC wafer, preferably after evacuating air and flowing an inert gas in and around the crucible.

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