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1. 发明申请

WO1989004549A2 ANNEALING METHOD FOR III-V DEPOSITION 审中-公开
标题翻译：用于III-V沉积的退火方法
公开(公告)号：WO1989004549A2
公开(公告)日：1989-05-18
申请号：PCT/US1988004015
申请日：1988-11-09
申请人： KOPIN CORPORATION
发明人： KOPIN CORPORATION , LEE, Jhang, Woo , McCULLOUGH, Richard, E.
IPC分类号： H01L21/20
CPC分类号： H01L21/02538 , H01L21/0237 , H01L21/02455 , H01L21/02573 , H01L21/0262 , Y10S148/025 , Y10S148/048 , Y10S148/065 , Y10S148/094 , Y10S148/097 , Y10S148/11 , Y10S438/933
摘要： A method for producing wafers having deposited layers of III-V materials on Si or Ge/Si substrates is disclosed. The method involves the use of multiple in situ and ex situ annealing steps and the formation of a thermal strain layer to produce wafers having a decreased incidence of defects and a balanced thermal strain. The wafers produced thereby are also disclosed.

2. 发明申请

WO1989009489A2 ETCHING METHOD 审中-公开
标题翻译：蚀刻方法
公开(公告)号：WO1989009489A2
公开(公告)日：1989-10-05
申请号：PCT/GB1989000213
申请日：1989-03-01
申请人： BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY
发明人： BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY , DUROSE, Kenneth
IPC分类号： H01L21/20
CPC分类号： H01L21/30621 , H01L21/3086 , H01L21/31105 , H01L21/31654 , Y10S148/006 , Y10S148/051 , Y10S148/071 , Y10S148/094 , Y10S148/11 , Y10S438/913
摘要： MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching. To prevent pattern broadening by diffusion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied by exposing the substrate to 20 % O2 + 80 % N2 for about 3 minutes at 450°C.

3. 发明专利

JP3583451B2 A method for manufacturing a semiconductor device 失效
公开(公告)号：JP3583451B2
公开(公告)日：2004-11-04
申请号：JP25551593
申请日：1993-10-13
申请人：エイ・ティ・アンド・ティ・コーポレーションAt&T Corp.
发明人：カッツアヴィシェイ , ジェヴァマイケル
IPC分类号： H01L21/28 , H01L21/223 , H01L21/285 , H01L29/43
CPC分类号： H01L21/285 , H01L21/2233 , H01L21/28575 , Y10S148/11

4. 发明专利

JPS6182470A Manufacture of quantum well device 失效
标题翻译：量子阱器件的制造
公开(公告)号：JPS6182470A
公开(公告)日：1986-04-26
申请号：JP14411385
申请日：1985-07-02
申请人： Texas Instruments Inc
发明人： MAAKU EI RIIDO , ROBAATO TEII BEITO
IPC分类号： H01L29/80 , H01L21/20 , H01L27/10 , H01L29/06 , H01L29/15 , H01L29/68 , H01L29/76
CPC分类号： B82Y10/00 , H01L29/158 , H01L29/7606 , Y10S148/05 , Y10S148/11 , Y10S148/16 , Y10S148/169

5. 发明专利

JPS5973495K1 JPS5973495K1 - 失效
公开(公告)号：JPS5973495K1
公开(公告)日：1984-04-25
申请号：JP18394582A
申请日：1982-10-19
CPC分类号： C23C16/45561 , C30B25/14 , Y10S148/056 , Y10S148/11

6. 发明专利

JPS5973495A Vapor-phase growing process 失效
标题翻译：蒸汽相生长工艺
公开(公告)号：JPS5973495A
公开(公告)日：1984-04-25
申请号：JP18394582
申请日：1982-10-19
申请人： Matsushita Electric Ind Co Ltd
发明人： OGURA MOTOTSUGU , BAN YUUZABUROU , HASE NOBUYASU
IPC分类号： C30B25/14 , C30B29/40 , H01L21/205
CPC分类号： C23C16/45561 , C30B25/14 , Y10S148/056 , Y10S148/11
摘要： PURPOSE: To form a high-quality compound semiconductor layer rapidly, and to decrease the deposition of the unnecessary material to the appartus, by feeding the second reaction gas supplied through the pipe extended from the downstream side to the upstream side of the flow of the first reaction gas, mixing the second reaction gas with the first reaction gas, and supplying the mixture to the substrate.
CONSTITUTION: The first reaction gas is supplied from the upstream side through the feeding pipe 15. The second reaction gas is introduced from the downstream- side end cap 16 through the pipe 17 to the upstream side of the substrate 9, and mixed with the first reaction gas. In the above process, the region containing the substrate 9 and the carbon susceptor 13 is heated at a high temperature by the high-frequency heating coil 18. Accordingly, the second reaction gas introduced through the pipe 17 is heated by the susceptor 13 in the course of crossing the susceptor. The preheated second reaction gas is mixed with the first reaction gas at the upsteam-side of the substrate to form a compound semiconductor layer on the substrate 9. If necessary, the preheating temperature of the second reaction gas is further increased by using a heater block 19 and a high-frequency coil 20 to heat the block 19.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：为了快速形成高质量的化合物半导体层，并且通过将从下游侧延伸的管的供给的第二反应气体供给到流动的流动的上游侧，第一反应气体，将第二反应气体与第一反应气体混合，并将混合物供给到基板。构成：第一反应气体从上游侧通过供给管15供给。第二反应气体从下游侧端盖16经管17导入基板9的上游侧，与第一反应气体反应气体。在上述过程中，含有基板9和碳基座13的区域被高频加热线圈18在高温下被加热。因此，通过管17引入的第二反应气体被基座13加热穿过感受器的过程。将预热的第二反应气体与基板的上游侧的第一反应气体混合，以在基板9上形成化合物半导体层。如果需要，通过使用加热器块进一步提高第二反应气体的预热温度 19和用于加热块19的高频线圈20。

7. 发明申请

WO8904549A3 ANNEALING METHOD FOR III-V DEPOSITION 审中-公开
标题翻译： III-V沉积的退火方法
公开(公告)号：WO8904549A3
公开(公告)日：1989-08-10
申请号：PCT/US8804015
申请日：1988-11-09
申请人： KOPIN CORP
发明人： LEE JHANG WOO , MCCULLOUGH RICHARD E
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/02538 , H01L21/0237 , H01L21/02455 , H01L21/02573 , H01L21/0262 , Y10S148/025 , Y10S148/048 , Y10S148/065 , Y10S148/094 , Y10S148/097 , Y10S148/11 , Y10S438/933
摘要： A method for producing wafers having deposited layers of III-V materials on Si or Ge/Si substrates is disclosed. The method involves the use of multiple in situ and ex situ annealing steps and the formation of a thermal strain layer to produce wafers having a decreased incidence of defects and a balanced thermal strain. The wafers produced thereby are also disclosed.
摘要翻译：公开了一种制造在Si或Ge / Si衬底上具有III-V族材料沉积层的晶片的方法。该方法包括使用多个原位和非原位退火步骤以及形成热应变层以产生具有降低的缺陷发生率和平衡的热应变的晶片。也公开了由此制造的晶片。

8. 发明申请

WO1986003231A1 CHEMICAL BEAM DEPOSITION METHOD 审中-公开
标题翻译：化学光束沉积法
公开(公告)号：WO1986003231A1
公开(公告)日：1986-06-05
申请号：PCT/US1985002359
申请日：1985-11-27
申请人： AMERICAN TELEPHONE & TELEGRAPH COMPANY
发明人： AMERICAN TELEPHONE & TELEGRAPH COMPANY , TSANG, Won-Tien
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B29/40 , C30B29/46 , H01L21/02521 , H01L21/0262 , Y10S148/11 , Y10S148/169
摘要： Epitaxial layers of semiconductor materials such as, e.g., III-V and II-VI materials are deposited on a substrate under high-vacuum conditions. Molecules of a compound of a constituent of such material travel essentially line-of-sight towards the substrate admixed to a carrier gas such as, e.g., hydrogen. For III-V layers the use of compounds, such as, e.g., trimethyl- and triethylgallium, trimethyl- and triethylindium, triethylphosphine, and trimethylarsine is advantageous and economical in the manufacture of electronic and opto-electronic devices.

9. 发明申请

WO1989004594A1 OMCVD OF III-V MATERIAL ON SILICON 审中-公开
标题翻译：硅胶上III-V材料的OMCVD
公开(公告)号：WO1989004594A1
公开(公告)日：1989-05-18
申请号：PCT/US1988004011
申请日：1988-11-09
申请人： KOPIN CORPORATION
发明人： KOPIN CORPORATION , SALERNO, Jack, P. , LEE, Jhang, Woo , McCULLOUGH, Richard, E.
IPC分类号： H10L21/20
CPC分类号： H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02546 , H01L21/0262 , H01L21/02639 , Y10S148/026 , Y10S148/029 , Y10S148/057 , Y10S148/072 , Y10S148/11 , Y10S148/169 , Y10S438/933 , Y10S438/974
摘要： A method of OMCVD heteroepitaxy of III/V (GaAs) material on a patterned Si substrate is described wherein heteroepitaxy deposition occurs only on the exposed Si surfaces and nowhere else.

10. 发明申请

WO1989004551A1 III-V SEMICONDUCTOR GROWTH INITIATION ON SILICON 审中-公开
标题翻译： III-V半导体生长在硅上的发展
公开(公告)号：WO1989004551A1
公开(公告)日：1989-05-18
申请号：PCT/US1988004013
申请日：1988-11-09
申请人： KOPIN CORPORATION
发明人： KOPIN CORPORATION , LEE, Jhang, Woo , McCULLOUGH, Richard, E. , SALERNO, Jack, P.
IPC分类号： H01L21/205
CPC分类号： H01L21/02546 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02513 , H01L21/02543 , H01L21/0262 , Y10S148/065 , Y10S148/072 , Y10S148/11 , Y10S148/149 , Y10S148/169 , Y10S438/933
摘要： A GaAs containing nucleation layer is deposited upon Si, Ge/Si, or other single crystal substrate from triethyl gallium (TEG). Deposition from TEG allows a lower deposition temperature which provides a low level of substrate contamination and improved surface morphology.

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