专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07920613B2 Optical semiconductor device and method of manufacturing same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US07920613B2
公开(公告)日：2011-04-05
申请号：US12245780
申请日：2008-10-06
申请人： Yasutaka Sakata
发明人： Yasutaka Sakata
IPC分类号： H01S5/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/2226 , H01S5/2275 , H01S5/3054 , H01S2304/00 , H01S2304/04
摘要： The reliability of a buried hetero-structure semiconductor laser is improved by preventing an increase in oscillation threshold current and a decrease in external differential quantum efficiency in cases where the semiconductor laser is energized continuously under conditions of high temperature and high optical output. An optical semiconductor laser has an optical waveguide structure comprising an n-type cladding layer, an active layer and p-type cladding layers, and a current narrowing/blocking structure comprising a p-type blocking layer and an n-type blocking layer, wherein concentration of hydrogen contained in the p-type cladding layers is higher than concentration of hydrogen contained in the p-type blocking layer.
摘要翻译：在半导体激光器在高温和高光输出条件下连续通电的情况下，通过防止振荡阈值电流的增加和外部微分量子效率的降低，可以提高掩埋异质结构半导体激光器的可靠性。光半导体激光器具有包括n型包覆层，有源层和p型覆层的光波导结构以及包括p型阻挡层和n型阻挡层的电流窄化/阻挡结构，其中 p型包覆层中所含的氢的浓度高于p型阻挡层中所含的氢浓度。

2. 发明授权

US06399404B2 Fabricating method of optical semiconductor device 失效
标题翻译：光学半导体器件的制造方法
公开(公告)号：US06399404B2
公开(公告)日：2002-06-04
申请号：US09407091
申请日：1999-09-28
申请人： Yasutaka Sakata
发明人： Yasutaka Sakata
IPC分类号： H01L2100
CPC分类号： H01L27/156 , H01S5/0201 , H01S5/06256 , H01S5/125 , H01S5/2077
摘要： In an optical semiconductor device fabrication method for simultaneously forming elements having different operation wavelengths on a circular semiconductor substrate, the number of elements for each operation wavelength is made constant efficiently and the operation characteristics of the elements are made highly uniform, by parabolically changing the operation wavelength of the optical semiconductor device from a center portion of the circular semiconductor substrate toward an outer periphery thereof.
摘要翻译：在用于在圆形半导体衬底上同时形成具有不同工作波长的元件的光半导体器件的制造方法中，通过抛物线地改变操作，使每个工作波长的元件的数量有效地保持高效且元件的操作特性高度均匀光学半导体器件的波长从圆形半导体衬底的中心部分朝向其外周。

3. 发明授权

US06391671B1 Method of producing an optical semiconductor device having a waveguide layer buried in an InP current blocking layer 有权
公开(公告)号：US06391671B1
公开(公告)日：2002-05-21
申请号：US09756117
申请日：2001-01-09
申请人： Yasumasa Inomoto , Yasutaka Sakata
发明人： Yasumasa Inomoto , Yasutaka Sakata
IPC分类号： H01L2100
摘要： An integrated semiconductor laser produced by forming waveguide layers each having a particular band gap and a particular layer thickness collectively and then forming an InP current blocking layer. After an InGaAsP layer has been formed on an InP substrate, a waveguide including a multiple quantum well active layer is formed by selective MOVPE. Then, the waveguide is buried in an InP current blocking layer. In this configuration, the current blocking layer exhibits its expected function without regard to the width of SiO2 stripes used for selective metalorganic vapor phase epitaxial growth (MOVPE). The laser is feasible for high output operation and can be produced at a high yield.

4. 发明申请

US20090092164A1 OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：光学半导体器件及其制造方法
公开(公告)号：US20090092164A1
公开(公告)日：2009-04-09
申请号：US12245780
申请日：2008-10-06
申请人： Yasutaka SAKATA
发明人： Yasutaka SAKATA
IPC分类号： H01S5/00 , H01L21/02
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/2226 , H01S5/2275 , H01S5/3054 , H01S2304/00 , H01S2304/04
摘要： The reliability of a buried hetero-structure semiconductor laser is improved by preventing an increase in oscillation threshold current and a decrease in external differential quantum efficiency in cases where the semiconductor laser is energized continuously under conditions of high temperature and high optical output. An optical semiconductor laser has an optical waveguide structure comprising an n-type cladding layer, an active layer and p-type cladding layers, and a current narrowing/blocking structure comprising a p-type blocking layer and an n-type blocking layer, wherein concentration of hydrogen contained in the p-type cladding layers is higher than concentration of hydrogen contained in the p-type blocking layer.
摘要翻译：在半导体激光器在高温和高光输出条件下连续通电的情况下，通过防止振荡阈值电流的增加和外部微分量子效率的降低，可以提高掩埋异质结构半导体激光器的可靠性。光半导体激光器具有包括n型包覆层，有源层和p型覆层的光波导结构以及包括p型阻挡层和n型阻挡层的电流窄化/阻挡结构，其中 p型包覆层中所含的氢的浓度高于p型阻挡层中所含的氢浓度。

5. 发明授权

US06350629B1 Optical semiconductor device having active layer and carrier recombination layer different from each other 失效
标题翻译：具有彼此不同的有源层和载流子复合层的光学半导体器件
公开(公告)号：US06350629B1
公开(公告)日：2002-02-26
申请号：US09386873
申请日：1999-08-31
申请人： Yasutaka Sakata
发明人： Yasutaka Sakata
IPC分类号： H01L2100
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/2224 , H01S5/2226 , H01S5/2272 , H01S5/2275
摘要： In an optical semiconductor device including a semiconductor substrate, an active layer formed on the semiconductor substrate, a pnpn-type current blocking layer formed on a side of the active layer, and a carrier recombination layer on the semiconductor substrate on the side of the active layer, a structure of the active layer is different from a structure of the carrier recombination layer.
摘要翻译：在包括半导体衬底的半导体衬底，形成在半导体衬底上的有源层，形成在有源层一侧上的pnpn型电流阻挡层和在该半导体衬底侧上的载流子复合层有源层的结构与载流子复合层的结构不同。

6. 发明授权

US06222867B1 Optical semiconductor device having waveguide layers buried in an InP current blocking layer 失效
标题翻译：具有埋在InP电流阻挡层中的波导层的光学半导体器件
公开(公告)号：US06222867B1
公开(公告)日：2001-04-24
申请号：US09080516
申请日：1998-05-18
申请人： Yasumasa Inomoto , Yasutaka Sakata
发明人： Yasumasa Inomoto , Yasutaka Sakata
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/2077 , H01S5/2206 , H01S5/2222 , H01S5/2226 , H01S5/2227 , H01S5/34306 , H01S5/3434 , H01S5/34373
摘要： An integrated semiconductor laser produced by forming waveguide layers each having a particular band gap and a particular layer thickness collectively and then forming an InP current blocking layer. After an InGaAsP layer has been formed on an InP substrate, a waveguide including a multiple quantum well active layer is formed by selective MOVPE. Then, the waveguide is buried in an InP current blocking layer. In this configuration, the current blocking layer exhibits its expected function without regard to the width of SiO2 stripes used for selective metalorganic vapor phase epitaxial growth (MOVPE). The laser is feasible for high output operation and can be produced at a high yield.
摘要翻译：通过形成各自具有特定带隙和特定层厚度的波导层，然后形成InP电流阻挡层而产生的集成半导体激光器。在InP衬底上形成InGaAsP层之后，通过选择性MOVPE形成包括多量子阱有源层的波导。然后，波导被埋在InP电流阻挡层中。在这种结构中，电流阻挡层表现出其预期的功能，而不考虑用于选择性金属有机气相外延生长（MOVPE）的SiO 2条纹的宽度。激光器对于高输出操作是可行的，并且可以以高产率生产。

7. 发明授权

US5913107A Photosemiconductor device and method of fabricating the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5913107A
公开(公告)日：1999-06-15
申请号：US102148
申请日：1998-06-22
申请人： Yasutaka Sakata
发明人： Yasutaka Sakata
IPC分类号： H01L21/205 , H01L21/22 , H01S5/22 , H01S5/227 , H01S5/30
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2072 , H01S5/2226 , H01S5/2227 , H01S5/2272 , H01S5/2275 , H01S5/3054 , H01S5/3434
摘要： A pair of SiO.sub.2 stripe masks are formed on a p-InP substrate (31) with a separation of 1.5 .mu.m in �011! direction and an optical waveguide including a p-InP clad layer (32), an active layer (33) and an n-InP clad layer (34) is formed on the p-InP substrate (31) at the 1.5 .mu.m exposed area according to MOVPE selective growth process. Both sides of the optical waveguide are buried with pnpn current blocking structure according to the MOVPE selective growth, wherein a p-InP layer (36) and n-InP layer (37) are formed, then a surface of the n-InP layer (37) is inverted to p-type to form a p-InP inversion layer (38) according to Zn open tube diffusion process carried out in MOVPE system, thereby the interconnection between the n-InP layer (37) and the n-InP clad layer (34) is prevented, and then a p-InP layer (39) and n-InP layer (40) are formed. An n-InP layer (41) is formed thereon.
摘要翻译：一对SiO 2条纹掩模形成在p-InP衬底（31）上，在[011]方向上分离为1.5μm，并且包括p-InP包层（32），有源层（33），并且根据MOVPE选择性生长工艺，在1.5μm暴露区域的p-InP衬底（31）上形成n-InP覆盖层（34）。根据MOVPE选择性生长，光波导的两侧被埋入pnpn电流阻挡结构，其中形成p-InP层（36）和n-InP层（37），然后形成n-InP层的表面 37）根据在MOVPE系统中进行的Zn开放管扩散过程被倒置成p型以形成p-InP反转层（38），由此在n-InP层（37）和n-InP包层之间的互连层（34），然后形成p-InP层（39）和n-InP层（40）。在其上形成n-InP层（41）。

8. 发明授权

US06383829B1 Optical semiconductor device and method of fabricating the same 失效
标题翻译：光半导体装置及其制造方法
公开(公告)号：US06383829B1
公开(公告)日：2002-05-07
申请号：US09667524
申请日：2000-09-22
申请人： Yasutaka Sakata
发明人： Yasutaka Sakata
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , G02B6/1228 , G02B2006/12123 , G02B2006/12173 , G02B2006/12176 , G02B2006/12178 , G02B2006/12195 , H01S5/10 , H01S5/1014 , H01S5/106 , H01S5/2077 , H01S5/227 , H01S5/2272 , H01S5/34 , H01S5/3409 , H01S5/3421 , H01S5/34306 , H01S5/34313 , H01S5/3434 , H01S5/50 , H01S2301/18 , H01S2304/04
摘要： There is provided an optical semiconductor device including an optical waveguide structure having a quantum well layer and an optical confinement layer as a core layer, wherein the core layer has a thickness varying in a lengthwise direction of the optical waveguide to thereby have a function of spot-size conversion, and the quantum well layer is designed to have a band-gap energy which is constant within ±30 meV in the direction. The above-mentioned optical semiconductor device makes it possible to an optical gain to laser oscillation wavelength over all ranges of a resonator, and hence makes it no longer necessary to form a region only for spot-size conversion (SSC). This ensures that a device length can be as small as that of a conventional laser diode. In addition, lower threshold value characteristic and high temperature operation performance could be achieved, and a yield in devices per a wafer can be significantly enhanced.
摘要翻译：提供了一种光学半导体器件，其包括具有量子阱层和光限制层作为芯层的光波导结构，其中芯层具有在光波导的长度方向上变化的厚度，从而具有点尺寸转换，并且量子阱层被设计成具有在方向上在±30meV内恒定的带隙能量。上述光学半导体器件使得可以在谐振器的所有范围上的激光振荡波长的光增益成为可能，因此不再需要仅形成用于点尺寸转换（SSC）的区域。这确保器件长度可以与常规激光二极管的长度一样小。此外，可以实现更低的阈值特性和高温操作性能，并且可以显着提高每个晶片的器件的产量。

9. 发明授权

US6036771A Method of manufacturing optical semiconductor device 有权
标题翻译：制造光半导体器件的方法
公开(公告)号：US6036771A
公开(公告)日：2000-03-14
申请号：US161521
申请日：1998-09-29
申请人： Yasutaka Sakata
发明人： Yasutaka Sakata
IPC分类号： H01L21/205 , B82Y10/00 , B82Y20/00 , B82Y40/00 , G02B6/13 , H01S5/00 , H01S5/22 , H01S5/227 , C30B25/92
CPC分类号： H01S5/227 , H01L33/0062 , H01S2304/04 , H01S5/2272 , H01S5/2277
摘要： In a method of manufacturing an optical semiconductor device having a semiconductor substrate, an optical waveguide formed by a semiconductor layer is formed on the semiconductor substrate by the use of the selective metal-organic vapor phase epitaxy including source materials. The source materials are intermittently supplied in the selective metal-organic vapor phase epitaxy.
摘要翻译：在制造具有半导体衬底的光半导体器件的方法中，通过使用包括源材料的选择性金属 - 有机气相外延在半导体衬底上形成由半导体层形成的光波导。在选择性金属 - 有机气相外延中间歇地供应源材料。

10. 发明授权

US5891748A Semiconductor optical waveguide and method of fabricating the same 失效
标题翻译：半导体光波导及其制造方法
公开(公告)号：US5891748A
公开(公告)日：1999-04-06
申请号：US855570
申请日：1997-05-13
申请人： Yasutaka Sakata
发明人： Yasutaka Sakata
IPC分类号： G02B6/122 , G02B6/12 , G02B6/13 , G02F1/025 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/16 , H01S5/20 , H01S5/227 , H01S5/343 , H01L21/20 , G02B6/10
CPC分类号： B82Y20/00 , G02B6/12004 , H01S5/0265 , H01S5/227 , G02B2006/12121 , G02B2006/12142 , H01S5/12 , H01S5/16 , H01S5/164 , H01S5/2077 , H01S5/2272 , H01S5/34306 , H01S5/34313
摘要： On an n-InP substrate (101), a mask (102) having a first portion (102a) and a second portion (102b) is formed. The mask (102) has a first gap (NG) at the first portion (102a). A width of the second portion (102b) is greater than a width of the first portion (102a). A core layer (120) is epitaxially grown selectively on the substrate (101) at an area corresponding to the first gap (NG). The first gap (NG) is widened and an additional gap (AG) is formed at the second portion (102b) to form a second gap (WG) comprising the first gap after widened and the additional gap (AG). A clad layer (106) is epitaxially grown on the substrate (101) at an area corresponding to the second gap (WG) so as to cover the core layer(120). A difference in width between the first portion (102a) and the second portion (102b) is set so that a thickness of the clad layer at an area corresponding to the second portion (102b) becomes equal to a thickness of the clad layer (106) at an area corresponding to the first portion (102a). A structure of the semiconductor optical waveguide comprising a window structure region in which the reflection of the guided light is small is provided with good controllability and reliability and with high yield.
摘要翻译：在n-InP衬底（101）上形成具有第一部分（102a）和第二部分（102b）的掩模（102）。掩模（102）在第一部分（102a）处具有第一间隙（NG）。第二部分（102b）的宽度大于第一部分（102a）的宽度。核心层（120）在对应于第一间隙（NG）的区域上在衬底（101）上选择性地外延生长。第一间隙（NG）被加宽，并且在第二部分（102b）处形成附加间隙（AG），以形成包括加宽后的第一间隙和附加间隙（AG）的第二间隙（WG）。在与第二间隙（WG）相对应的区域的衬底（101）上外延生长覆盖层（106）以覆盖芯层（120）。设置第一部分（102a）和第二部分（102b）之间的宽度差，使得在与第二部分（102b）相对应的区域处的包层的厚度等于包层（106）的厚度）在与第一部分（102a）对应的区域。包括引导光的反射小的窗口结构区域的半导体光波导的结构具有良好的可控性和可靠性以及高产率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式