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71. 发明申请

US20060135762A1 Cyclic malonamides as inhibitors of Abeta protein protection 有权
标题翻译：循环丙二酰胺作为Abeta蛋白质保护的抑制剂
公开(公告)号：US20060135762A1
公开(公告)日：2006-06-22
申请号：US11327721
申请日：2006-01-06
申请人： Richard Olson , Michael Yang
发明人： Richard Olson , Michael Yang
IPC分类号： C07D267/02 , C07D243/12
CPC分类号： C07D223/16 , A61K31/4015 , A61K31/445 , A61K31/55 , A61K38/00 , C07D223/10 , C07D223/12 , C07D223/18 , C07D243/14 , C07D243/24 , C07D401/06 , C07D401/12 , C07D403/12 , C07K5/0205 , C07K5/06078 , C07K5/06139 , C07K5/06191 , C07K5/0812
摘要： This invention relates to novel cyclic malonamides having the formula (I): to their pharmaceutical compositions and to their methods of use. These novel compounds inhibit the processing of amyloid precursor protein and, more specifically, inhibit the production of Aβ-peptide, thereby acting to prevent the formation of neurological deposits of amyloid protein. More particularly, the present invention relates to the treatment of neurological disorders related to β-amyloid production such as Alzheimer's disease and Down's Syndrome.
摘要翻译：本发明涉及具有式（I）的新型环状丙二酰胺：其药物组合物及其使用方法。这些新化合物抑制淀粉样蛋白前体蛋白的加工，更具体地，抑制Aβ肽的产生，从而起到防止淀粉样蛋白质神经沉积的形成的作用。更具体地，本发明涉及治疗与β-淀粉样蛋白产生相关的神经系统疾病，例如阿尔茨海默病和唐氏综合征。

72. 发明申请

US20060075966A1 Apparatus and method for plasma assisted deposition 有权
公开(公告)号：US20060075966A1
公开(公告)日：2006-04-13
申请号：US11146309
申请日：2005-06-06
申请人： Chen-An Chen , Avgerinos Gelatos , Michael Yang , Ming Xi , Mark Hytros
发明人： Chen-An Chen , Avgerinos Gelatos , Michael Yang , Ming Xi , Mark Hytros
IPC分类号： C23C16/00
CPC分类号： C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/4554 , C23C16/45544 , C23C16/45565 , C23C16/515 , H01J37/32082 , H01J37/3244 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843
摘要： Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.

73. 发明申请

US20060072167A1 Method of image signal modulation based on light source luminosity 审中-公开
标题翻译：基于光源亮度的图像信号调制方法
公开(公告)号：US20060072167A1
公开(公告)日：2006-04-06
申请号：US10953456
申请日：2004-09-30
申请人： Michael Yang , Ming-Hsun Shen , Ta-Yi Lee
发明人： Michael Yang , Ming-Hsun Shen , Ta-Yi Lee
IPC分类号： H04N1/40
CPC分类号： H04N1/40
摘要： An image signal modulation method is applicable to an optical scanner to obtain compensated image when the light source is not stable during starting. It first scans a document to get corresponding optoelectronic signals of pixels at different positions. Then, it transfers the optoelectronic signals to a memory unit for adjusting a shading table and parameters of an ASIC to compensate the brightness of each pixel, resemble a condition of stable luminosity, and generate an updated shading table. Finally, it compensates the optoelectronic signals of each corresponding pixel according to the updated shading table, and obtains the scanned image data. The compensation solves the problem of luminosity changing and variation during starting of scanning so that an instant use of scanner is available.
摘要翻译：当光源在起动期间不稳定时，图像信号调制方法适用于光学扫描器以获得补偿图像。它首先扫描文档以获得不同位置处的像素的相应光电信号。然后，将光电信号传送到存储器单元，用于调整阴影表和ASIC的参数以补偿每个像素的亮度，类似于稳定亮度的条件，并生成更新的阴影表。最后，根据更新的阴影表来补偿每个对应像素的光电子信号，并获得扫描图像数据。该补偿解决了扫描开始期间光度变化和变化的问题，以便可以立即使用扫描仪。

74. 发明申请

US20060040052A1 Methods for depositing tungsten layers employing atomic layer deposition techniques 审中-公开
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US20060040052A1
公开(公告)日：2006-02-23
申请号：US10418728
申请日：2003-04-18
申请人： Hongbin Fang , Hyungsuk Yoon , Ken Lai , Chi Young , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung
发明人： Hongbin Fang , Hyungsuk Yoon , Ken Lai , Chi Young , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung
IPC分类号： C23C16/00
CPC分类号： C23C16/06 , C23C16/02 , C23C16/0218 , C23C16/0281 , C23C16/045 , C23C16/08 , C23C16/16 , C23C16/45525
摘要： A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a soak. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane, disilane, dichlorosilane and derivatives thereof. A tungsten bulk layer may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
摘要翻译：提供了在基板表面上形成钨层的方法。在一个方面，该方法包括将衬底表面定位在处理室中并将衬底表面暴露于浸泡。然后通过交替地脉冲选择由硅烷，乙硅烷，二氯硅烷及其衍生物组成的组中的含钨化合物和还原气体，在相同的处理室中的基底表面上沉积成核层。然后可以使用循环沉积，化学气相沉积或物理气相沉积技术在成核层上沉积钨体层。

75. 发明申请

US20060030148A1 Formation of a tantalum-nitride layer 有权
公开(公告)号：US20060030148A1
公开(公告)日：2006-02-09
申请号：US11240189
申请日：2005-09-30
申请人： Sean Seutter , Michael Yang , Ning Xi
发明人： Sean Seutter , Michael Yang , Ning Xi
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/4554 , C23C16/56 , H01L21/28562 , H01L21/28568 , H01L21/76844 , H01L21/76862
摘要： A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

76. 发明申请

US20050234039A1 Substituted lactams as inhibitors of Abeta protein production 有权
公开(公告)号：US20050234039A1
公开(公告)日：2005-10-20
申请号：US11005573
申请日：2004-12-06
申请人： Qi Han , Hong Liu , Richard Olson , Michael Yang
发明人： Qi Han , Hong Liu , Richard Olson , Michael Yang
IPC分类号： C07D243/26 , A61K31/55 , A61K31/5513 , A61P25/28 , A61P43/00 , C07D223/12 , C07D223/18 , C07D243/12 , C07D243/24 , C07D401/04 , C07D43/02
CPC分类号： C07D401/04 , C07D223/12 , C07D223/18 , C07D243/12 , C07D243/24 , C07D403/02
摘要： This invention relates to novel lactams of Formula (I): having drug and bio-affecting properties, their pharmaceutical compositions and methods of use. These novel compounds inhibit the processing of amyloid precursor protein and, more specifically, inhibit the production of Aβ-peptide, thereby acting to prevent the formation of neurological deposits of amyloid protein. More particularly, the present invention relates to the treatment of neurological disorders related to β-amyloid production such as Alzheimer's disease and Down's Syndrome.

77. 发明申请

US20050109627A1 Methods and chemistry for providing initial conformal electrochemical deposition of copper in sub-micron features 审中-公开
标题翻译：在亚微米特征中提供铜的初始保形电化学沉积的方法和化学
公开(公告)号：US20050109627A1
公开(公告)日：2005-05-26
申请号：US10962236
申请日：2004-10-08
申请人： Zhi-Wen Sun , Hooman Hafezi , Chunman Yu , Aron Rosenfeld , Michael Yang
发明人： Zhi-Wen Sun , Hooman Hafezi , Chunman Yu , Aron Rosenfeld , Michael Yang
IPC分类号： C25D3/38 , C25D5/02 , C25D5/10 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76843 , C25D3/38 , C25D5/10 , C25D7/123 , H01L21/2885 , H01L21/76868 , H01L21/76873 , H01L2221/1089
摘要： A method for electrolytically repairing a copper seed layer. The method includes positioning the seed layer in fluid communication with a low conductivity seed layer repair solution, wherein the low conductivity seed layer repair solution includes a copper concentration of less than about 20 g/l, a pH of less than about 4, a chlorine ion concentration of between about 20 ppm and about 100 ppm, and an additive organic surfactant configured to suppress a copper deposition rate in the concentration range of 200 ppm to 2000 ppm. The method further includes applying a seed layer repair bias configured to generate a current density of less than about 5 mA/cm2 across the seed layer and cleaning the repaired seed layer in pure water containing less than 1 ppm chloride ions.
摘要翻译：一种用于电解修复铜籽晶层的方法。该方法包括将种子层定位成与低电导种子层修复溶液流体连通，其中低电导种子层修复溶液包括小于约20g / l的铜浓度，小于约4的pH，氯约20ppm至约100ppm的离子浓度，以及配置为在200ppm至2000ppm的浓度范围内抑制铜沉积速率的添加剂有机表面活性剂。该方法还包括施加晶种层修复偏压，其被配置成跨越种子层产生小于约5mA / cm 2的电流密度，并且在含有小于1ppm的纯水中清洁修复的种子层氯离子。

78. 发明申请

US20050054626A1 Substituted cycloalkylamine derivatives as modulators of chemokine receptor activity 有权
标题翻译：取代的环烷基胺衍生物作为趋化因子受体活性的调节剂
公开(公告)号：US20050054626A1
公开(公告)日：2005-03-10
申请号：US10923538
申请日：2004-08-19
申请人： Percy Carter , Robert Cherney , Douglas Batt , Gregory Brown , John Duncia , Daniel Gardner , Michael Yang
发明人： Percy Carter , Robert Cherney , Douglas Batt , Gregory Brown , John Duncia , Daniel Gardner , Michael Yang
IPC分类号： C07C237/22 , C07C275/42 , C07D205/04 , C07D207/34 , C07D213/38 , C07D213/64 , C07D213/65 , C07D213/75 , C07D213/81 , C07D213/82 , C07D231/40 , C07D231/56 , C07D233/54 , C07D235/30 , C07D239/28 , C07D239/42 , C07D239/94 , C07D257/04 , C07D261/20 , C07D271/06 , C07D277/28 , C07D295/205 , C07D295/215 , C07D307/66 , C07D307/68 , C07D401/04 , C07D413/12 , C07D487/04 , A61K31/55 , A61K31/397 , A61K31/497 , C07D223/12
CPC分类号： C07C237/22 , C07B2200/07 , C07C275/42 , C07C2601/14 , C07D205/04 , C07D207/34 , C07D213/38 , C07D213/64 , C07D213/65 , C07D213/75 , C07D213/81 , C07D213/82 , C07D231/40 , C07D231/56 , C07D233/56 , C07D235/30 , C07D239/28 , C07D239/42 , C07D239/94 , C07D257/04 , C07D261/20 , C07D271/06 , C07D277/28 , C07D295/205 , C07D295/215 , C07D307/66 , C07D307/68 , C07D401/04 , C07D413/12 , C07D487/04
摘要： The present application describes modulators of MCP-1 of formula (I): or pharmaceutically acceptable salt forms thereof, useful for the prevention of asthma, multiple sclerosis, artherosclerosis, and rheumatoid arthritis.
摘要翻译：本申请描述了可用于预防哮喘，多发性硬化，动脉粥样硬化和类风湿性关节炎的式（I）的MCP-1或其药学上可接受的盐形式的调节剂。

79. 发明申请

US20050008779A1 Multiple precursor cyclical depositon system 失效
标题翻译：多个前体循环保存系统
公开(公告)号：US20050008779A1
公开(公告)日：2005-01-13
申请号：US10913888
申请日：2004-08-06
申请人： Michael Yang , Hyungsuk Yoon , Hui Zhang , Hongbin Fang , Ming Xi
发明人： Michael Yang , Hyungsuk Yoon , Hui Zhang , Hongbin Fang , Ming Xi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45531 , C23C16/45561
摘要： Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
摘要翻译：本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。在一个方面，三元材料层包括但不限于钨硼硅（WBxSiy），氮化硅钛（TiSixNy），氮化钽（TaSixNy），氧氮化硅（SiOxNy）和氧化铪铪（HfSixOy）。在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

80. 发明申请

US20050006245A1 Multiple-step electrodeposition process for direct copper plating on barrier metals 审中-公开
标题翻译：用于在阻挡金属上直接镀铜的多步电沉积工艺
公开(公告)号：US20050006245A1
公开(公告)日：2005-01-13
申请号：US10616097
申请日：2003-07-08
申请人： Zhi-Wen Sun , Renren He , You Wang , Michael Yang
发明人： Zhi-Wen Sun , Renren He , You Wang , Michael Yang
IPC分类号： C25D3/38 , C25D5/10 , C25D7/12 , H01L21/288 , H01L21/768 , C25D5/02
CPC分类号： H01L21/76864 , C25D3/38 , C25D5/10 , C25D7/123 , H01L21/2885 , H01L21/76868 , H01L21/76873 , H01L21/76877
摘要： Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.
摘要翻译：本发明的实施方案教导了一种将铜籽晶层沉积到基底表面的方法，通常为阻挡层。该方法包括将基板表面放置在铜溶液中，其中铜溶液包括络合的铜离子。在衬底表面上施加电流或偏压，还原络合的铜离子以将铜籽晶层沉积到阻挡层上。

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