专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050008779A1 Multiple precursor cyclical depositon system 失效
标题翻译：多个前体循环保存系统
公开(公告)号：US20050008779A1
公开(公告)日：2005-01-13
申请号：US10913888
申请日：2004-08-06
申请人： Michael Yang , Hyungsuk Yoon , Hui Zhang , Hongbin Fang , Ming Xi
发明人： Michael Yang , Hyungsuk Yoon , Hui Zhang , Hongbin Fang , Ming Xi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45531 , C23C16/45561
摘要： Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
摘要翻译：本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。在一个方面，三元材料层包括但不限于钨硼硅（WBxSiy），氮化硅钛（TiSixNy），氮化钽（TaSixNy），氧氮化硅（SiOxNy）和氧化铪铪（HfSixOy）。在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

2. 发明授权

US07396565B2 Multiple precursor cyclical deposition system 失效
标题翻译：多前体循环沉积系统
公开(公告)号：US07396565B2
公开(公告)日：2008-07-08
申请号：US10913888
申请日：2004-08-06
申请人： Michael Xi Yang , Hyungsuk Alexander Yoon , Hui Zhang , Hongbin Fang , Ming Xi
发明人： Michael Xi Yang , Hyungsuk Alexander Yoon , Hui Zhang , Hongbin Fang , Ming Xi
IPC分类号： C23C16/40
CPC分类号： C23C16/45544 , C23C16/45531 , C23C16/45561
摘要： Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
摘要翻译：本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。在一个方面，三元材料层包括但不限于钨硼硅（W x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x <<）（TaSi x N y），氮化硅（TaSi x N y N y），氮氧化硅（SiO 2） N x Y）和氧化铪氧化铪（HfSi x O y y）。在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

3. 发明授权

US06846516B2 Multiple precursor cyclical deposition system 有权
标题翻译：多前体循环沉积系统
公开(公告)号：US06846516B2
公开(公告)日：2005-01-25
申请号：US10118605
申请日：2002-04-08
申请人： Michael Xi Yang , Hyungsuk Alexander Yoon , Hui Zhang , Hongbin Fang , Ming Xi
发明人： Michael Xi Yang , Hyungsuk Alexander Yoon , Hui Zhang , Hongbin Fang , Ming Xi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/40
CPC分类号： C23C16/45544 , C23C16/45531 , C23C16/45561
摘要： Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
摘要翻译：本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。在一个方面，三元材料层包括但不限于钨硼硅（WBxSiy），氮化硅钛（TiSixNy），氮化钽（TaSixNy），氧氮化硅（SiOxNy）和氧化铪铪（HfSixOy）。在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

4. 发明申请

US20110100295A1 SYSTEM AND METHOD FOR FORMING AN INTEGRATED BARRIER LAYER 审中-公开
标题翻译：用于形成集成障碍层的系统和方法
公开(公告)号：US20110100295A1
公开(公告)日：2011-05-05
申请号：US12987962
申请日：2011-01-10
申请人： Ming Xi , Michael Yang , Hui Zhang
发明人： Ming Xi , Michael Yang , Hui Zhang
IPC分类号： C23C16/52 , C23C16/455
CPC分类号： H01L21/76846 , H01L21/28562 , H01L28/75 , H01L28/84 , H01L28/90
摘要： An apparatus for processing a substrate is provided. The apparatus includes a process chamber, and a dual-mode gas distribution plate disposed within the process chamber. The dual-mode gas distribution plate comprises a first gas distribution zone disposed in a center of the gas distribution plate, and a second gas distribution zone surrounding the first gas distribution zone, the second gas distribution zone being fluidly isolated from the first gas distribution zone, wherein the first gas distribution zone is coupled to a valve system to deliver sequential pulses of a first gas to the first gas distribution zone to perform a cyclical deposition process, and the second gas distribution zone is in communication with a flow controller to deliver a second gas to perform a chemical vapor deposition process.
摘要翻译：提供了一种用于处理衬底的设备。该装置包括处理室和设置在处理室内的双模气体分配板。双模式气体分配板包括设置在气体分配板的中心的第一气体分配区和围绕第一气体分配区的第二气体分配区，第二气体分配区与第一气体分配区流体隔离，其中所述第一气体分配区域联接到阀系统以将第一气体的顺序脉冲输送到所述第一气体分配区域以执行循环沉积过程，并且所述第二气体分配区域与流量控制器连通以递送第二气体进行化学气相沉积工艺。

5. 发明授权

US07867914B2 System and method for forming an integrated barrier layer 有权
标题翻译：用于形成集成阻挡层的系统和方法
公开(公告)号：US07867914B2
公开(公告)日：2011-01-11
申请号：US11770735
申请日：2007-06-29
申请人： Ming Xi , Michael Yang , Hui Zhang
发明人： Ming Xi , Michael Yang , Hui Zhang
IPC分类号： H01L21/44 , H01L21/469
CPC分类号： H01L21/76846 , H01L21/28562 , H01L28/75 , H01L28/84 , H01L28/90
摘要： An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode deposition process comprising a chemical vapor deposition (CVD) step and a cyclical deposition step. The dual-mode deposition process may be performed in a single process chamber.
摘要翻译：描述了在基板上形成集成阻挡层的装置和方法。整合的阻挡层至少包括第一难熔金属层和第二难熔金属层。使用包括化学气相沉积（CVD）步骤和循环沉积步骤的双模式沉积工艺形成集成阻挡层。双模式沉积工艺可以在单个处理室中进行。

6. 发明申请

US20080014352A1 SYSTEM AND METHOD FOR FORMING AN INTEGRATED BARRIER LAYER 有权
标题翻译：用于形成集成障碍层的系统和方法
公开(公告)号：US20080014352A1
公开(公告)日：2008-01-17
申请号：US11770735
申请日：2007-06-29
申请人： MING XI , Michael Yang , Hui Zhang
发明人： MING XI , Michael Yang , Hui Zhang
IPC分类号： C23C16/00
CPC分类号： H01L21/76846 , H01L21/28562 , H01L28/75 , H01L28/84 , H01L28/90
摘要： An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode deposition process comprising a chemical vapor deposition (CVD) step and a cyclical deposition step. The dual-mode deposition process may be performed in a single process chamber.
摘要翻译：描述了在基板上形成集成阻挡层的装置和方法。整合的阻挡层至少包括第一难熔金属层和第二难熔金属层。使用包括化学气相沉积（CVD）步骤和循环沉积步骤的双模式沉积工艺形成集成阻挡层。双模式沉积工艺可以在单个处理室中进行。

7. 发明授权

US07279432B2 System and method for forming an integrated barrier layer 有权
标题翻译：用于形成集成阻挡层的系统和方法
公开(公告)号：US07279432B2
公开(公告)日：2007-10-09
申请号：US10414271
申请日：2003-04-15
申请人： Ming Xi , Michael Yang , Hui Zhang
发明人： Ming Xi , Michael Yang , Hui Zhang
IPC分类号： H01L21/44 , H01L21/469
CPC分类号： H01L21/76846 , H01L21/28562 , H01L28/75 , H01L28/84 , H01L28/90
摘要： An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode deposition process comprising a chemical vapor deposition (CVD) step and a cyclical deposition step. The dual-mode deposition process may be performed in a single process chamber.
摘要翻译：描述了在基板上形成集成阻挡层的装置和方法。整合的阻挡层至少包括第一难熔金属层和第二难熔金属层。使用包括化学气相沉积（CVD）步骤和循环沉积步骤的双模式沉积工艺形成集成阻挡层。双模式沉积工艺可以在单个处理室中进行。

8. 发明授权

US06809026B2 Selective deposition of a barrier layer on a metal film 有权
标题翻译：在金属膜上选择性地沉积阻挡层
公开(公告)号：US06809026B2
公开(公告)日：2004-10-26
申请号：US10322345
申请日：2002-12-18
申请人： Hyungsuk Alexander Yoon , Michael X. Yang , Hui Zhang , Soonil Hong , Ming Xi
发明人： Hyungsuk Alexander Yoon , Michael X. Yang , Hui Zhang , Soonil Hong , Ming Xi
IPC分类号： H01L214763
CPC分类号： C23C16/45525 , H01L21/28562 , H01L21/76843 , H01L21/76849
摘要： A method to selectively deposit a barrier layer on a metal film formed on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the metal film formed on the substrate in a process chamber.
摘要翻译：公开了一种在形成在基板上的金属膜上选择性地沉积阻挡层的方法。使用包括预定数量的沉积循环，然后进行吹扫步骤的循环沉积工艺，将选择性地沉积在金属膜上。每个沉积循环包括在处理室中在形成在基底上的金属膜上交替地吸附含难熔金属的前体和还原气体。

9. 发明申请

US20120010316A1 UV-CURABLE, WEAR RESISTANT AND ANTISTATIC COATING FILLED WITH CARBON NANOTUBES 审中-公开
标题翻译：紫外线固化，耐磨和抗静电涂层与碳纳米管
公开(公告)号：US20120010316A1
公开(公告)日：2012-01-12
申请号：US13255921
申请日：2010-03-05
申请人： Helmut Meyer , Zhong Zhang , Hui Zhang , Ke Peng , Lu-Qi Liu , Hongchao Li , Hui Zhang , Stefan Bahnmueller , Julia Hitzbleck
发明人： Helmut Meyer , Zhong Zhang , Hui Zhang , Ke Peng , Lu-Qi Liu , Hongchao Li , Hui Zhang , Stefan Bahnmueller , Julia Hitzbleck
IPC分类号： C09D135/02 , C08K7/24 , B82Y30/00
CPC分类号： C09D7/70 , B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/36 , C08F290/067 , C08K3/04 , C08K3/041 , C08L33/08 , C09D175/16
摘要： A methodology is provided for making UV-curable, wear resistant and antistatic coating filled with carbon nanotubes (CNTs). The composition consists of a mixture of CNTs, an acrylate-based monomer, a urethane-acrylate oligomer and a photoinitiator. The present invention provides a coating of which the wear resistance and antistatic properties are dramatically improved in comparison with the polymer substrate. This coating is suitable for protecting a variety of polymer substrates from scratch and electrostatic accumulation.
摘要翻译：提供了一种用于制备填充有碳纳米管（CNT）的紫外线固化，耐磨和抗静电涂层的方法。该组合物由CNT，丙烯酸酯类单体，氨基甲酸酯 - 丙烯酸酯低聚物和光引发剂的混合物组成。本发明提供了与聚合物基材相比耐磨性和抗静电性能显着提高的涂层。该涂层适用于保护各种聚合物基材免受刮擦和静电积聚。

10. 外观设计

USD1029203S1 Shower valve set 有权
公开(公告)号：USD1029203S1
公开(公告)日：2024-05-28
申请号：US29846667
申请日：2022-07-19
申请人： Hui Zhang
设计人： Hui Zhang
摘要： FIG. 1 is a front perspective view of a shower valve set showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left view thereof;
FIG. 5 is a right view thereof;
FIG. 6 is a top view thereof;
FIG. 7 is a bottom view thereof;
FIG. 8 is an enlarged view of the detail in FIG. 1; and,
FIG. 9 is another enlarged view of the detail in FIG. 1.
The broken lines shown in the figures are for the purpose of illustrating portions of the shower valve set that forms no part of the claimed design. The broken lines showing the enlargements in FIGS. 1,8 and 9 form no part of the claimed design.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式