专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060030148A1 Formation of a tantalum-nitride layer 有权
公开(公告)号：US20060030148A1
公开(公告)日：2006-02-09
申请号：US11240189
申请日：2005-09-30
申请人： Sean Seutter , Michael Yang , Ning Xi
发明人： Sean Seutter , Michael Yang , Ning Xi
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/4554 , C23C16/56 , H01L21/28562 , H01L21/28568 , H01L21/76844 , H01L21/76862
摘要： A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

2. 发明申请

US20050164487A1 Formation of a tantalum-nitride layer 有权
标题翻译：形成氮化钽层
公开(公告)号：US20050164487A1
公开(公告)日：2005-07-28
申请号：US11088072
申请日：2005-03-23
申请人： Sean Seutter , Michael Yang , Ming Xi
发明人： Sean Seutter , Michael Yang , Ming Xi
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/56 , H01L21/285 , H01L21/768 , H01L21/4763 , H01L21/44 , H01L21/8242
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/4554 , C23C16/56 , H01L21/28562 , H01L21/28568 , H01L21/76844 , H01L21/76862
摘要： A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber. A nitrogen concentration of the tantalum nitride layer is reduced by exposing the substrate to a plasma annealing process. A metal-containing layer is then deposited on the tantalum nitride layer by a deposition process.
摘要翻译：公开了一种形成用于集成电路制造的氮化钽层的方法。在一个实施例中，该方法包括通过在设置在处理室中的衬底上化学吸附钽前体和氮前体来形成氮化钽层。氮化钽层的氮浓度通过将衬底暴露于等离子体退火工艺而降低。然后通过沉积工艺将含金属的层沉积在氮化钽层上。

3. 发明申请

US20070099415A1 INTEGRATION PROCESS OF TUNGSTEN ATOMIC LAYER DEPOSITION FOR METALLIZATION APPLICATION 审中-公开
标题翻译：用于金属化应用的金属原子层沉积的集成过程
公开(公告)号：US20070099415A1
公开(公告)日：2007-05-03
申请号：US11549941
申请日：2006-10-16
申请人： Ling Chen , Hua Chung , Sean Seutter , Michael Yang , Ming Xi , Vincent Ku , Dien-Yeh Wu , Alan Ouye , Norman Nakashima , Barry Chin , Hong Zhang
发明人： Ling Chen , Hua Chung , Sean Seutter , Michael Yang , Ming Xi , Vincent Ku , Dien-Yeh Wu , Alan Ouye , Norman Nakashima , Barry Chin , Hong Zhang
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.
摘要翻译：在一个实施例中，提供了一种在衬底上形成含钨材料的方法，其包括将具有下层钨层的衬底定位在处理室内，并且在循环层沉积期间将下述钨层上沉积含钨阻挡层处理。含钨阻挡层含有难熔金属氮化物材料。该方法进一步提供在气相沉积工艺期间在含钨阻挡层上沉积种子层，并且在化学气相沉积工艺期间在种子层上沉积体钨层。

4. 发明授权

US09842949B2 High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers 有权
公开(公告)号：US09842949B2
公开(公告)日：2017-12-12
申请号：US13807631
申请日：2012-08-09
申请人： Mehrdad M. Moslehi , Pawan Kapur , K.-Josef Kramer , Virendra V. Rana , Sean Seutter , Anand Deshpande , Anthony Calcaterra , Gerry Olsen , Kamran Manteghi , Thom Stalcup , George D. Kamian , David Xuan-Qi Wang , Yen-Sheng Su , Michael Wingert
发明人： Mehrdad M. Moslehi , Pawan Kapur , K.-Josef Kramer , Virendra V. Rana , Sean Seutter , Anand Deshpande , Anthony Calcaterra , Gerry Olsen , Kamran Manteghi , Thom Stalcup , George D. Kamian , David Xuan-Qi Wang , Yen-Sheng Su , Michael Wingert
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/068 , H01L31/18 , H01L31/02 , H01L31/0216 , H01L31/0232 , H01L31/0376 , H01L31/075 , H01L31/05 , H01L31/049
CPC分类号： H01L31/022441 , H01L31/0201 , H01L31/02167 , H01L31/02327 , H01L31/03765 , H01L31/0392 , H01L31/049 , H01L31/0516 , H01L31/0682 , H01L31/075 , H01L31/1812 , H01L31/1896 , Y02E10/547
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

5. 发明授权

US08962380B2 High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductor absorbers 有权
标题翻译：高效光伏背接触太阳能电池结构及使用薄平面半导体吸收体的制造方法
公开(公告)号：US08962380B2
公开(公告)日：2015-02-24
申请号：US13057104
申请日：2010-12-09
申请人： Mehrdad M Moslehi , Pawan Kapur , Karl-Josef Kramer , David Xuan-Qi Wang , Sean Seutter , Virenda V Rana , Anthony Calcaterra , Emmanuel Van Kerschaver
发明人： Mehrdad M Moslehi , Pawan Kapur , Karl-Josef Kramer , David Xuan-Qi Wang , Sean Seutter , Virenda V Rana , Anthony Calcaterra , Emmanuel Van Kerschaver
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/02 , H01L31/0352 , H01L31/0392 , H01L31/068 , H01L31/0236
CPC分类号： H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.
摘要翻译：提供背接触式太阳能电池及制造方法。背接触背面太阳能电池包括具有钝化层的光捕获前侧表面的衬底，掺杂的基极区域和具有极性与掺杂基极区域相反的掺杂背侧发射极区域。背面钝化层和发射体上的图案化反射层形成光阱背面反射镜。交叉的金属化图案位于太阳能电池的背面，并且永久性增强材料为电池提供支撑。

6. 发明申请

US20070082507A1 Method and apparatus for the low temperature deposition of doped silicon nitride films 审中-公开
标题翻译：掺杂氮化硅薄膜低温沉积的方法和装置
公开(公告)号：US20070082507A1
公开(公告)日：2007-04-12
申请号：US11245373
申请日：2005-10-06
申请人： R. Iyer , Jacob Smith , Sean Seutter , Kangzhan Zhang , Alexander Tam , Kevin Cunningham , Phani Ramachandran
发明人： R. Iyer , Jacob Smith , Sean Seutter , Kangzhan Zhang , Alexander Tam , Kevin Cunningham , Phani Ramachandran
IPC分类号： H01L21/00
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/4412 , C23C16/4557
摘要： A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.
摘要翻译：公开了一种用于低温沉积掺杂氮化硅膜的方法和装置。这些改进包括用于CVD室的机械设计，其提供用于低温处理的均匀热分布和工艺化学品的均匀分布，以及用于通过加热衬底在衬底上沉积包含硅和氮的至少一层的方法，使含硅前体进入具有由适配环和一个或多个阻断板限定的混合区域的处理室，以及加热接合环和排气系统的一部分，排出氢，锗，硼或碳的一部分的排气系统并且可选地将含氮前体流入处理室。

7. 发明申请

US20060286819A1 Method for silicon based dielectric deposition and clean with photoexcitation 审中-公开
标题翻译：硅基电介质沉积和光激发清洗方法
公开(公告)号：US20060286819A1
公开(公告)日：2006-12-21
申请号：US11157533
申请日：2005-06-21
申请人： Sean Seutter , Kaushal Singh , Jacob Smith , R. Iyer , Steve Ghanayem , Adam Brailove , Robert Shydo , Jeannot Morin
发明人： Sean Seutter , Kaushal Singh , Jacob Smith , R. Iyer , Steve Ghanayem , Adam Brailove , Robert Shydo , Jeannot Morin
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/02 , C23C16/345 , C23C16/482 , C23C16/56 , H01L21/0228 , H01L21/3185
摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.
摘要翻译：本发明的实施方案通常提供使用光激发沉积膜的方法。光致激发可以用于在沉积之前处理衬底，在沉积期间处理衬底和/或气体，处理沉积膜或用于增强腔室清洁中的至少一种。在一个实施例中，用于在衬底上沉积硅和含氮膜的方法包括加热设置在处理室中的衬底，产生约1至约10eV的能量束，将能量转移到衬底的表面 ; 使含氮化学物质流入处理室，使含有硅 - 氮的键的含硅化学物质流入处理室，并在衬底上沉积含硅和氮的膜。

8. 发明申请

US20060281310A1 Rotating substrate support and methods of use 审中-公开
标题翻译：旋转基板支撑和使用方法
公开(公告)号：US20060281310A1
公开(公告)日：2006-12-14
申请号：US11147938
申请日：2005-06-08
申请人： Jacob Smith , Alexander Tam , R. Iyer , Sean Seutter , Binh Tran , Nir Merry , Adam Brailove , Robert Shydo , Robert Andrews , Frank Roberts , Theodore Smick , Geoffrey Ryding
发明人： Jacob Smith , Alexander Tam , R. Iyer , Sean Seutter , Binh Tran , Nir Merry , Adam Brailove , Robert Shydo , Robert Andrews , Frank Roberts , Theodore Smick , Geoffrey Ryding
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： H01L21/68792 , C23C16/4584 , H01L21/67126 , H01L21/68742
摘要： A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.
摘要翻译：本文公开了一种利用旋转衬底支撑件来处理衬底的方法和装置。在一个实施例中，用于处理衬底的装置包括具有设置在腔室内的衬底支撑组件的室。衬底支撑组件包括具有支撑表面的衬底支撑件和设置在支撑表面下方的加热器。轴联接到基板支撑件，并且电机通过转子联接到轴，以向基板支撑件提供旋转运动。密封块设置在转子周围并与其形成密封。密封块具有至少一个密封件和沿密封块和轴之间的界面设置的至少一个通道。端口连接到每个通道以连接到泵。升降机构联接到轴上以升高和降低基板支撑。

9. 发明申请

US20060009041A1 Silicon nitride film with stress control 失效
公开(公告)号：US20060009041A1
公开(公告)日：2006-01-12
申请号：US10885969
申请日：2004-07-06
申请人： R. Iyer , Andrew Lam , Yuji Maeda , Thomas Mele , Faran Nouri , Jacob Smith , Sean Seutter , Sanjeev Tandon , Randhir Singh Thakur , Sunderraj Thirupapuliyur
发明人： R. Iyer , Andrew Lam , Yuji Maeda , Thomas Mele , Faran Nouri , Jacob Smith , Sean Seutter , Sanjeev Tandon , Randhir Singh Thakur , Sunderraj Thirupapuliyur
IPC分类号： H01L21/302
CPC分类号： H01L21/324 , H01L29/1054 , H01L29/6656 , H01L29/7842 , H01L29/7843
摘要： An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

10. 发明申请

US20050109276A1 Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber 审中-公开
标题翻译：使用BTBAS双（叔丁基氨基硅烷）在单晶片室中的氮化硅的热化学气相沉积
公开(公告)号：US20050109276A1
公开(公告)日：2005-05-26
申请号：US10911208
申请日：2004-08-04
申请人： R. Iyer , Sean Seutter , Jacob Smith , Gregory Dibello , Alexander Tam , Binh Tran , Sanjeev Tandon
发明人： R. Iyer , Sean Seutter , Jacob Smith , Gregory Dibello , Alexander Tam , Binh Tran , Sanjeev Tandon
IPC分类号： C23C16/00 , C23C16/34 , C23C16/44 , C23C16/455
CPC分类号： C23C16/4557 , C23C16/345 , C23C16/4412 , C23C16/45565
摘要： A method and apparatus for a CVD chamber that provides uniform heat distribution, efficient precursor delivery, uniform distribution of process and inert chemicals, and thermal management of residues in the chamber and exhaust surfaces by changing the mechanical design of a single wafer thermal CVD chamber. The improvements include a processing chamber comprising a chamber body and a chamber lid defining a processing region, a substrate support disposed in the processing region, a gas delivery system mounted on the chamber lid, the gas delivery system comprising a lid, an adapter ring and two blocker plates that define a gas mixing region, and a face plate fastened to the adapter ring, a heating element positioned to heat the adapter ring to a desired temperature, and a temperature controlled exhaust system. The improvements also include a method for depositing a silicon nitride layer on a substrate, comprising vaporizing bis(tertiary-butylamino) silane, flowing the bis(tertiary-butylamino) silane into a processing chamber, flowing ammonia into a processing chamber, combining the two reactants in a mixer in the chamber lid, having an additional mixing region defined by an adapter ring and at least two blocker plates, heating the adapter ring, flowing the bis(tertiary-butylamino) silane through a gas distribution plate into a processing region above a substrate. The improvements reduce defects across the surface of the substrate and improve product yield.
摘要翻译：一种用于CVD室的方法和装置，其通过改变单个晶片热CVD室的机械设计来提供均匀的热分布，有效的前体输送，工艺和惰性化学品的均匀分布，以及腔室和排气表面中残留物的热管理。该改进包括一个处理室，该处理室包括一个室主体和一个限定处理区域的室盖，设置在处理区域中的基板支撑件，安装在室盖上的气体输送系统，气体输送系统包括盖子，适配器环和限定气体混合区域的两个阻挡板和紧固到接合环的面板，定位成将接合环加热到所需温度的加热元件和温度控制的排气系统。该改进还包括在基底上沉积氮化硅层的方法，包括将双（叔丁基氨基）硅烷蒸发，将双（叔丁基氨基）硅烷流入处理室，将氨流入处理室，将两在室盖中的混合器中的反应物，具有由适配环和至少两个阻挡板限定的附加混合区域，加热适配环，使双（叔丁基氨基）硅烷通过气体分布板流入上述加工区域底物。这些改进减少了衬底表面的缺陷并提高了产品的产率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式