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1. 发明申请

US20060040052A1 Methods for depositing tungsten layers employing atomic layer deposition techniques 审中-公开
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US20060040052A1
公开(公告)日：2006-02-23
申请号：US10418728
申请日：2003-04-18
申请人： Hongbin Fang , Hyungsuk Yoon , Ken Lai , Chi Young , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung
发明人： Hongbin Fang , Hyungsuk Yoon , Ken Lai , Chi Young , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung
IPC分类号： C23C16/00
CPC分类号： C23C16/06 , C23C16/02 , C23C16/0218 , C23C16/0281 , C23C16/045 , C23C16/08 , C23C16/16 , C23C16/45525
摘要： A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a soak. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane, disilane, dichlorosilane and derivatives thereof. A tungsten bulk layer may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
摘要翻译：提供了在基板表面上形成钨层的方法。在一个方面，该方法包括将衬底表面定位在处理室中并将衬底表面暴露于浸泡。然后通过交替地脉冲选择由硅烷，乙硅烷，二氯硅烷及其衍生物组成的组中的含钨化合物和还原气体，在相同的处理室中的基底表面上沉积成核层。然后可以使用循环沉积，化学气相沉积或物理气相沉积技术在成核层上沉积钨体层。

2. 发明申请

US20050008779A1 Multiple precursor cyclical depositon system 失效
标题翻译：多个前体循环保存系统
公开(公告)号：US20050008779A1
公开(公告)日：2005-01-13
申请号：US10913888
申请日：2004-08-06
申请人： Michael Yang , Hyungsuk Yoon , Hui Zhang , Hongbin Fang , Ming Xi
发明人： Michael Yang , Hyungsuk Yoon , Hui Zhang , Hongbin Fang , Ming Xi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45531 , C23C16/45561
摘要： Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
摘要翻译：本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。在一个方面，三元材料层包括但不限于钨硼硅（WBxSiy），氮化硅钛（TiSixNy），氮化钽（TaSixNy），氧氮化硅（SiOxNy）和氧化铪铪（HfSixOy）。在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

3. 发明申请

US20070072432A1 Apparatus for the removal of a metal oxide from a substrate and methods therefor 失效
标题翻译：用于从衬底去除金属氧化物的设备及其方法
公开(公告)号：US20070072432A1
公开(公告)日：2007-03-29
申请号：US11237457
申请日：2005-09-27
申请人： Hyungsuk Yoon , William Thie , Yezdi Dordi
发明人： Hyungsuk Yoon , William Thie , Yezdi Dordi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/67069 , H05H1/24 , H05H1/2406 , H05H1/48 , H05H2001/2418
摘要： An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.
摘要翻译：公开了一种从衬底生成用于去除金属氧化物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以去除金属氧化物。

4. 发明申请

US20070068899A1 Apparatus for the removal of an edge polymer from a substrate and methods therefor 有权
标题翻译：用于从衬底去除边缘聚合物的设备及其方法
公开(公告)号：US20070068899A1
公开(公告)日：2007-03-29
申请号：US11236170
申请日：2005-09-26
申请人： Hyungsuk Yoon
发明人： Hyungsuk Yoon
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , H01J37/32541 , H01J37/3255 , H05H1/2406 , H05H2001/2412
摘要： An apparatus generating a plasma for removing an edge polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the edge polymer.
摘要翻译：公开了一种生成用于从基板去除边缘聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以去除边缘聚合物。

5. 发明申请

US20070068623A1 Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor 审中-公开
标题翻译：用于从基板边缘去除一组副产品的设备及其方法
公开(公告)号：US20070068623A1
公开(公告)日：2007-03-29
申请号：US11237327
申请日：2005-09-27
申请人： Yunsang Kim , Andrew Bailey , Hyungsuk Yoon
发明人： Yunsang Kim , Andrew Bailey , Hyungsuk Yoon
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , H01J37/321 , H01J37/32623
摘要： A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.
摘要翻译：公开了一种包括用于处理衬底的等离子体室的等离子体处理系统。该装置包括配置用于支撑基板的第一表面的卡盘。该装置还包括等离子体阻挡屏障，其相对于衬底的第二表面以间隔开的关系设置，第二表面与第一表面相对，等离子体阻挡屏障基本上屏蔽衬底的中心部分并留下环形衬底的第二表面的周边区域基本上不受等离子体阻挡屏障的屏蔽。所述设备还包括至少一个动力电极，所述动力电极与所述等离子体阻挡屏障协同工作以从等离子体气体产生约束等离子体，所述受限等离子体基本上限制在所述衬底的环形周边部分并且远离所述衬底的中心部分底物。

6. 发明申请

US20060128152A1 Plasma oxidation and removal of oxidized material 失效
公开(公告)号：US20060128152A1
公开(公告)日：2006-06-15
申请号：US11076725
申请日：2005-03-09
申请人： Yunsang Kim , Andrew Bailey , Hyungsuk Yoon , Arthur Howald
发明人： Yunsang Kim , Andrew Bailey , Hyungsuk Yoon , Arthur Howald
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32136 , H01L21/31683 , H01L21/321 , H01L21/32115 , H01L21/32135 , H01L21/32138 , H01L21/32139 , H01L21/7684 , H01L21/76865 , H01L21/76885
摘要： A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.

7. 发明申请

US20070072433A1 Apparatus for the removal of a fluorinated polymer from a substrate and methods therefor 有权
标题翻译：用于从基材除去氟化聚合物的设备及其方法
公开(公告)号：US20070072433A1
公开(公告)日：2007-03-29
申请号：US11237477
申请日：2005-09-27
申请人： Hyungsuk Yoon , John Boyd , Andras Kuthi
发明人： Hyungsuk Yoon , John Boyd , Andras Kuthi
IPC分类号： H01L21/302 , G03C1/00 , H01L21/461
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

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