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1. 发明申请

US20060075966A1 Apparatus and method for plasma assisted deposition 有权
公开(公告)号：US20060075966A1
公开(公告)日：2006-04-13
申请号：US11146309
申请日：2005-06-06
申请人： Chen-An Chen , Avgerinos Gelatos , Michael Yang , Ming Xi , Mark Hytros
发明人： Chen-An Chen , Avgerinos Gelatos , Michael Yang , Ming Xi , Mark Hytros
IPC分类号： C23C16/00
CPC分类号： C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/4554 , C23C16/45544 , C23C16/45565 , C23C16/515 , H01J37/32082 , H01J37/3244 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843
摘要： Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.

2. 发明授权

US07779784B2 Apparatus and method for plasma assisted deposition 有权
标题翻译：用于等离子体辅助沉积的装置和方法
公开(公告)号：US07779784B2
公开(公告)日：2010-08-24
申请号：US11146309
申请日：2005-06-06
申请人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
发明人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/4554 , C23C16/45544 , C23C16/45565 , C23C16/515 , H01J37/32082 , H01J37/3244 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843
摘要： Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.
摘要翻译：本发明的实施例涉及通过在处理区域附近产生等离子体辅助沉积的装置和方法。该装置的一个实施例包括基板处理室，其包括顶部喷淋板，耦合到顶部淋浴板的电源，底部淋浴板和布置在顶部淋浴板和底部淋浴板之间的绝缘体。一方面，电源适于选择性地向顶部喷淋板提供电力，以从顶部喷淋板和底部淋浴板之间的气体产生等离子体。在另一个实施例中，电源耦合到顶部喷淋板和底部淋浴板，以在底部喷淋板和基板支撑件之间产生等离子体。该方法的一个实施方案包括在单个室中执行一个或多个过程，包括但不限于循环层沉积，组合循环层沉积和等离子体增强化学气相沉积; 等离子体增强化学气相沉积; 和/或化学气相沉积。

3. 发明授权

US06998014B2 Apparatus and method for plasma assisted deposition 失效
公开(公告)号：US06998014B2
公开(公告)日：2006-02-14
申请号：US10197940
申请日：2002-07-16
申请人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
发明人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/4554 , C23C16/45544 , C23C16/45565 , C23C16/515 , H01J37/32082 , H01J37/3244 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843
摘要： Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.

4. 发明申请

US20050194374A1 Heated ceramic substrate support with protective coating 审中-公开
标题翻译：加热陶瓷基板支撑与保护涂层
公开(公告)号：US20050194374A1
公开(公告)日：2005-09-08
申请号：US10792054
申请日：2004-03-02
申请人： Avgerinos Gelatos , Olkan Cuvalci , Tong Zhang , Chen-An Chen
发明人： Avgerinos Gelatos , Olkan Cuvalci , Tong Zhang , Chen-An Chen
IPC分类号： H05B3/74
CPC分类号： H05B3/283 , H05B2203/002
摘要： A substrate support comprises a ceramic block, ceramic coating, resistance heater, and heater leads. The ceramic block comprises a first ceramic material and has a substrate receiving pocket sized to receive a substrate, a peripheral ledge extending about the substrate receiving pocket, and side surfaces. The ceramic coating comprises a second ceramic material and covers the substrate pocket and peripheral ledge of the ceramic block. In one version, the second ceramic material is composed of a silicon nitride compound. In another version, the second ceramic material is composed of an amorphous Si—H—N—O compound.
摘要翻译：衬底支撑件包括陶瓷块，陶瓷涂层，电阻加热器和加热器引线。陶瓷块包括第一陶瓷材料并且具有尺寸适于接纳基底的基底接收口袋，围绕基底接收袋延伸的周边凸缘和侧面。陶瓷涂层包括第二陶瓷材料并且覆盖陶瓷块的基底袋和周边凸缘。在一个版本中，第二陶瓷材料由氮化硅化合物组成。在另一种形式中，第二陶瓷材料由非晶Si-H-N-O化合物组成。

5. 发明授权

US6066836A High temperature resistive heater for a process chamber 失效
标题翻译：用于处理室的高温电阻加热器
公开(公告)号：US6066836A
公开(公告)日：2000-05-23
申请号：US717780
申请日：1996-09-23
申请人： Steven Aihua Chen , Henry Ho , Mei Chang , Ming Xi , Chen-An Chen , Chiliang Chen
发明人： Steven Aihua Chen , Henry Ho , Mei Chang , Ming Xi , Chen-An Chen , Chiliang Chen
IPC分类号： C23C16/46 , F27D99/00 , F27B5/14 , C23C16/00
CPC分类号： F27D99/0006 , C23C16/46 , F27D2099/0008
摘要： A resistive heating structure for a processing apparatus such as a chemical vapor deposition chamber. The system includes a resistive heating substrate holder including a support surface and a support shaft, the holder being comprised of a first material. The support surface includes a resistive heating element. The support shaft has a given length, and through bores for allowing a thermocouple to engage the support surface and electrical conductors to couple to the resistive heating element in the support surface. A metallic mounting structure is coupled to the support shaft and secured to the process apparatus to create a sealed environment within the holder and mounting structure to protect the electrical leads and thermocouple from the process environment.
摘要翻译：用于诸如化学气相沉积室的处理装置的电阻加热结构。该系统包括电阻加热衬底保持器，其包括支撑表面和支撑轴，该保持器由第一材料构成。支撑表面包括电阻加热元件。支撑轴具有给定的长度，并且通过孔允许热电偶接合支撑表面和电导体以耦合到支撑表面中的电阻加热元件。金属安装结构联接到支撑轴并固定到处理装置以在保持器和安装结构内形成密封环境，以保护电引线和热电偶免受过程环境的影响。

6. 发明授权

US07947131B2 Copper deposition chamber having integrated bevel clean with edge bevel removal detection 失效
标题翻译：铜沉积室具有整体斜面清洁和边缘斜面去除检测
公开(公告)号：US07947131B2
公开(公告)日：2011-05-24
申请号：US12783391
申请日：2010-05-19
申请人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
发明人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
IPC分类号： B08B7/04
CPC分类号： H01L21/6708 , H01L21/67253
摘要： Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus comprises a substrate support configured to support the rotating substrate on a back side and rotate the substrate about a central axis, and a sensor positioned above the substrate support, the sensor being configured to inspect a front side of the rotating substrate while moving simultaneously radially across the substrate.
摘要翻译：本发明的实施例通常提供用于检测和控制半导体衬底的边缘斜面去除的装置和方法。本发明的一个实施例提供一种用于检查旋转基片的装置。该装置包括：衬底支撑件，被配置为在后侧支撑旋转衬底并围绕中心轴线旋转衬底;以及位于衬底支撑件上方的传感器，该传感器被配置为在同时移动的同时检查旋转衬底的前侧径向穿过衬底。

7. 发明授权

US07153787B2 CVD plasma assisted lower dielectric constant SICOH film 有权
标题翻译： CVD等离子体辅助低介电常数SICOH膜
公开(公告)号：US07153787B2
公开(公告)日：2006-12-26
申请号：US11044246
申请日：2005-01-27
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： H01L21/469
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

8. 发明申请

US20050153572A1 CVD plasma assisted lower dielectric constant sicoh film 有权
标题翻译： CVD等离子体辅助低介电常数薄膜
公开(公告)号：US20050153572A1
公开(公告)日：2005-07-14
申请号：US11044246
申请日：2005-01-27
申请人： Seon-Mee Cho , Peter Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： C23C16/30 , H01L21/316 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

9. 发明授权

US06486082B1 CVD plasma assisted lower dielectric constant sicoh film 失效
标题翻译： CVD等离子体辅助低介电常数薄膜
公开(公告)号：US06486082B1
公开(公告)日：2002-11-26
申请号：US09885985
申请日：2001-06-18
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： H07L21477
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

10. 发明授权

US06387207B1 Integration of remote plasma generator with semiconductor processing chamber 有权
标题翻译：远程等离子体发生器与半导体处理室的集成
公开(公告)号：US06387207B1
公开(公告)日：2002-05-14
申请号：US09561325
申请日：2000-04-28
申请人： Karthik Janakiraman , Kelly Fong , Chen-An Chen , Paul Le , Rong Pan , Shankar Venkataraman
发明人： Karthik Janakiraman , Kelly Fong , Chen-An Chen , Paul Le , Rong Pan , Shankar Venkataraman
IPC分类号： H01L2100
CPC分类号： H01J37/3244 , H01J37/32357 , H01J37/32458
摘要： A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.
摘要翻译：紧凑的独立式远程等离子体发生器安装在半导体处理室的盖上以形成集成的基板处理系统。远程等离子体发生器在清洁操作中被激活以产生清洁等离子体物质，以提供比原位等离子体清洁过程更好的清洁室和降低全氟化碳排放。三通阀是可调节的，以控制气体流向腔室。在清洁操作期间，三通阀将清洁等离子体前体从第一气体管线引导到远程等离子体发生器，以产生清洗等离子体物质，其流入室以清除其中的沉积物。在沉积过程中，三通阀将来自平坦气体管线的第一工艺气体引导到旁路远程等离子体发生器。在进入室之前，第一工艺气体通常与从混合装置中的第二气体管线供应的第二工艺气体混合，以在其上设置的衬底上沉积一层。

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