专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US08742342B2 Electron microscope 有权
标题翻译：电子显微镜
公开(公告)号：US08742342B2
公开(公告)日：2014-06-03
申请号：US13505951
申请日：2010-11-01
申请人： Nobuhiro Okai , Yasunari Sohda
发明人： Nobuhiro Okai , Yasunari Sohda
IPC分类号： H01J37/04 , H01J37/145 , H01J37/14
CPC分类号： H01J37/04 , H01J37/026 , H01J37/14 , H01J37/145 , H01J37/153 , H01J37/28 , H01J2237/004 , H01J2237/0044 , H01J2237/121 , H01J2237/153
摘要： A scanning electron microscope suppresses a beam drift by reducing charging on a sample surface while suppressing resolution degradation upon observation of an insulator sample. An electron microscope includes an electron source and an objective lens that focuses an electron beam emitted from the electron source, which provides an image using a secondary signal generated from the sample irradiated with the electron beam. A magnetic body with a continuous structure and an inside diameter larger than an inside diameter of an upper pole piece that forms the objective lens is provided between the objective lens and the sample.
摘要翻译：扫描电子显微镜通过减少对样品表面的充电而抑制光束偏移，同时在观察绝缘体样品时抑制分辨率劣化。电子显微镜包括电子源和物镜，其聚焦从电子源发射的电子束，其使用从照射电子束的样品产生的二次信号来提供图像。在物镜和样品之间设置具有连续结构且内径大于形成物镜的上极片的内径的磁体。

72. 发明授权

US08125518B2 Scanning electron microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US08125518B2
公开(公告)日：2012-02-28
申请号：US13139315
申请日：2009-11-24
申请人： Nobuhiro Okai , Yasunari Sohda
发明人： Nobuhiro Okai , Yasunari Sohda
IPC分类号： H04N9/47
CPC分类号： G01B15/00 , H01J37/222 , H01J37/28
摘要： Provided is a scanning electron microscope including: an image recording unit (112) which stores a plurality of acquired frame images; a correction analyzing handling unit (113) which calculates a drift amount between frame images and a drift amount between a plurality of field images constituting a frame image; and a data handling unit (111) which corrects positions of respective field images constituting the plurality of fields images according to the drift amount between the field images and superimposes the field images on one another so as to create a new frame image. This provides a scanning electron microscope which can obtain a clear frame image even if an image drift is caused during observation of a pattern on a semiconductor substrate or an insulating object.
摘要翻译：提供一种扫描电子显微镜，包括：图像记录单元，其存储多个获取的帧图像; 校正分析处理单元，其计算帧图像之间的漂移量和构成帧图像的多个场图像之间的漂移量; 以及数据处理单元（111），其根据场图像之间的漂移量校正构成多个场图像的各个场图像的位置，并将场图像彼此叠加，从而创建新的帧图像。这提供了即使在观察半导体衬底或绝缘物体上的图案时引起图像漂移，也可以获得清晰的帧图像的扫描电子显微镜。

73. 发明授权

US08064681B2 Method and apparatus for inspecting reticle 有权
标题翻译：检查掩模版的方法和装置
公开(公告)号：US08064681B2
公开(公告)日：2011-11-22
申请号：US12292660
申请日：2008-11-24
申请人： Nobuhiro Okai , Shinji Okazaki , Yasunari Sohda , Yoshinori Nakayama
发明人： Nobuhiro Okai , Shinji Okazaki , Yasunari Sohda , Yoshinori Nakayama
IPC分类号： G06K9/00
CPC分类号： G06K9/00 , G06K2209/19 , G06T7/0004
摘要： The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result.
摘要翻译：本发明提供了一种掩模版检查技术，其能够在同一层上的双重图案化技术中，使图案之间的相对位置能够在暴露于样品（例如晶片）时成为缺陷的图案被评估。用于检查用于检查用于使用双重图案形成技术在基板上形成图案的图案的两个掩模版的掩模版的装置具有：用于输入测量对象的图案的坐标信息的坐标信息输入单元; 图像输入单元，用于基于所获得的坐标信息获取两个标线图案的图像; 用于在相同坐标处叠加两个光罩的图像的图像叠加单元; 相对位置计算单元，用于找到两个标线之间的图案之间的相对位置; 评估单元，用于基于所述相对位置分配所述重叠精度的指标，并评估所述两个标线是否需要修理; 以及评价结果输出单元，用于输出评估结果。

74. 发明授权

US07683313B2 Charged particle beam measurement equipment, size correction and standard sample for correction 有权
标题翻译：带电粒子束测量设备，尺寸校正和标准样品进行校正
公开(公告)号：US07683313B2
公开(公告)日：2010-03-23
申请号：US12010852
申请日：2008-01-30
申请人： Yasunari Sohda , Yoshinori Nakayama , Hajime Koyanagi , Keiichiro Hitomi
发明人： Yasunari Sohda , Yoshinori Nakayama , Hajime Koyanagi , Keiichiro Hitomi
IPC分类号： G01D18/00
CPC分类号： H01J37/28 , B82Y15/00 , H01J2237/2826
摘要： Correction of widths obtained by measurement of a sample with the use of a scanning electron microscope is executed with greater precision. A standard sample for correction comprises a plurality of correction mark members, the respective correction mark members, being lined up at specified intervals in a specified direction, and respective widths thereof, in the specified direction, differing from each other so as to be of respective sizes as pre-set. Measurement of the respective widths of the correction mark members is made to obtain respective measurement widths while authorized widths of the correction mark members are kept stored in an image processing unit of the scanning electron microscope to thereby find differences between the respective measurement widths, and authorized widths corresponding thereto, and the differences are stored as respective correction functions to correct the measurement width of the sample.
摘要翻译：以更高的精度执行通过使用扫描电子显微镜测量样品获得的宽度的校正。用于校正的标准样本包括多个校正标记构件，各个校正标记构件在指定方向上以指定间隔排列，并且在指定方向上以相应的宽度彼此不同，以相应的方式尺寸为预设。进行校正标记部件的宽度的测量，以获得各自的测量宽度，同时将校正标记部件的授权宽度保存在扫描电子显微镜的图像处理单元中，从而发现各个测量宽度之间的差异，并且被授权相应的宽度，并且差异被存储为相应的校正函数以校正样本的测量宽度。

75. 发明授权

US07612334B2 Standard reference component for calibration, fabrication method for the same, and scanning electron microscope using the same 有权
标题翻译：用于校准的标准参考部件，其制造方法和使用其的扫描电子显微镜
公开(公告)号：US07612334B2
公开(公告)日：2009-11-03
申请号：US11939596
申请日：2007-11-14
申请人： Yoshinori Nakayama , Yasunari Sohda , Keiichiro Hitomi , Hajime Koyanagi
发明人： Yoshinori Nakayama , Yasunari Sohda , Keiichiro Hitomi , Hajime Koyanagi
IPC分类号： H01J37/26 , H01J37/28 , G01D18/00
CPC分类号： H01J37/28 , H01J37/244 , H01J37/263 , H01J2237/24578 , H01J2237/2816 , H01J2237/2823 , H01J2237/2826 , H01J2237/30433 , H01J2237/3142 , H01J2237/31732
摘要： The present invention provides a standard reference component for calibration for performing magnification calibration used in the scanning electron microscope with high precision, and provides a scanning electron microscope technique using it. Provided is a standard reference component for calibration for calibrating a scanning electron microscope that measures a length of a pattern in an observation area from information on the intensity of secondary electrons or reflected electrons generated by scanning an incident electron beam in the observation area on a measuring sample, having: a first substrate on which a multiple-layer is laminated and a second substrate with a recess for holding the first substrate, wherein the first substrate is held in the recess of the second substrate so that a normal direction of the multiple-layer surface may be roughly perpendicular to a normal direction of the second substrate surface, and the multiple-layer has a multiple-layer structure of a film containing silicon and a film containing molybdenum.
摘要翻译：本发明提供了一种用于校准的标准参考部件，用于以高精度执行扫描电子显微镜中使用的放大校准，并提供使用它的扫描电子显微镜技术。提供了用于校准扫描电子显微镜的标准参考部件，该扫描电子显微镜从关于通过扫描观察区域中的入射电子束产生的二次电子或反射电子的强度的信息来测量观察区域中的图案的长度具有：层叠有多层的第一基板和具有用于保持所述第一基板的凹部的第二基板，其中，所述第一基板保持在所述第二基板的所述凹部中，层表面可以大致垂直于第二基板表面的法线方向，并且多层具有含硅的膜和含有钼的膜的多层结构。

76. 发明申请

US20080210867A1 Scanning Electron Microscope and Calibration of Image Distortion 有权
标题翻译：扫描电子显微镜和图像失真校准
公开(公告)号：US20080210867A1
公开(公告)日：2008-09-04
申请号：US11866426
申请日：2007-10-03
申请人： Keiichiro Hitomi , Yasunari Sohda , Yoshinori Nakayama , Hajime Koyanagi
发明人： Keiichiro Hitomi , Yasunari Sohda , Yoshinori Nakayama , Hajime Koyanagi
IPC分类号： G01N23/00 , H01J37/26
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2826
摘要： In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.
摘要翻译：在通过测量扫描失真和校准扫描失真来获得没有失真的扫描电子显微镜图像的方法和装置中，存在由于电子束的扫描失真引起的尺寸控制中出现误差的问题。为了解决这个问题，通过用电子束扫描预定区域来获得图像，从图像中选择多个区域，在每个区域中测量图案间距，并根据结果计算扫描失真量的测量，然后校正。

77. 发明授权

US07385194B2 Charged particle beam application system 有权
标题翻译：带电粒子束应用系统
公开(公告)号：US07385194B2
公开(公告)日：2008-06-10
申请号：US11475934
申请日：2006-06-28
申请人： Osamu Kamimura , Tadashi Kanosue , Yasunari Sohda , Susumu Goto
发明人： Osamu Kamimura , Tadashi Kanosue , Yasunari Sohda , Susumu Goto
IPC分类号： H01J37/28 , G01N13/10
CPC分类号： H01J37/265 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3177 , H01J2237/24507 , H01J2237/24528 , H01J2237/28
摘要： An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a transmission detector including two diaphragm plates (first and second diaphragms) and a detector, a detection angle determined by a distance between the first and second diaphragms and an aperture diameter of the second diaphragm is made equal to or smaller than the divergence angle of the electron beam to be measured, and the landing angle is determined based on the relation between a center of the fine hole of the first diaphragm and the center of the aperture of the second diaphragm at which the amount of detected current is maximum.
摘要翻译：本发明的目的是即使在多束电子束光刻系统中也测量着色角，其中每个光束的电流量都很小。其另一个目的是测量着陆角的绝对值和具有高SN比的相对着陆角。在包括两个隔膜板（第一和第二隔膜）和检测器的传输检测器中，由第一和第二隔膜之间的距离和第二隔膜的孔径确定的检测角度等于或小于基于第一膜片的细孔的中心与检测电流量最大的第二膜片的孔的中心之间的关系来确定待测量的电子束和着陆角。

78. 发明申请

US20080067376A1 CHARGED PARTICLE BEAM APPARATUS 审中-公开
标题翻译：充电颗粒光束装置
公开(公告)号：US20080067376A1
公开(公告)日：2008-03-20
申请号：US11751094
申请日：2007-05-21
申请人： Sayaka Tanimoto , Osamu Kamimura , Yasunari Sohda , Hiroya Ohta
发明人： Sayaka Tanimoto , Osamu Kamimura , Yasunari Sohda , Hiroya Ohta
IPC分类号： G21K7/00
CPC分类号： H01J37/153 , H01J37/265 , H01J37/28 , H01J2237/1205 , H01J2237/1534 , H01J2237/1536 , H01J2237/2446 , H01J2237/2448 , H01J2237/24592 , H02N13/00
摘要： This invention provides a charged particle beam apparatus that can makes reduction in off axis aberration and separate detection of secondary beams to be compatible. The charged particle beam apparatus has: an electron optics that forms a plurality of primary charged particle beams, projects them on a specimen, and makes them scan the specimen with a first deflector; a plurality of detectors that individually detect a plurality of secondary charged particle beams produced from the plurality of locations of the specimen by irradiation of the plurality of primary charged particle beams; and a voltage source for applying a voltage to the specimen. The charged particle beam apparatus further has: a Wien filter for separating paths of the primary charged particle beams and paths of the secondary charged particle beams; a second deflector for deflecting the secondary charged particle beams separated by the Wien filter; and control means for controlling the first deflector and the second deflector in synchronization, wherein the plurality of detectors detect the plurality of secondary charged particle beams separated by the Wien filter individually.
摘要翻译：本发明提供了一种带电粒子束装置，其可以减少离轴像差和将次级束的分离检测兼容。带电粒子束装置具有：形成多个初级带电粒子束的电子光学器件，将它们投射在样本上，并使它们用第一偏转器扫描样本; 多个检测器，通过多个初级带电粒子束的照射，分别检测从样本的多个位置产生的多个次级带电粒子束; 以及用于向样本施加电压的电压源。带电粒子束装置还具有：维纳滤波器，用于分离初级带电粒子束的路径和二次带电粒子束的路径; 用于偏转由维恩滤波器分离的二次带电粒子束的第二偏转器; 以及用于同步地控制第一偏转器和第二偏转器的控制装置，其中多个检测器分别检测由维恩过滤器分离的多个次级带电粒子束。

79. 发明授权

US06768118B2 Electron beam monitoring sensor and electron beam monitoring method 有权
标题翻译：电子束监测传感器和电子束监测方法
公开(公告)号：US06768118B2
公开(公告)日：2004-07-27
申请号：US10350188
申请日：2003-01-24
申请人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
发明人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
IPC分类号： H01J326
CPC分类号： H01J37/244 , H01J2237/24405 , H01J2237/31774
摘要： The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.
摘要翻译：本发明提供了一种能够在多电子束书写系统中提供远光监测精度和高速监测的光束监测传感器以及使用其的监测方法。在用于电子束监测的法拉第杯中，钽或重金属使用原子序数大于钽的材料来提供具有高纵横比的法拉第杯结构。微法拉第杯允许电子束监测具有较少的光束泄漏到高加速度电子束。

80. 发明授权

US06511048B1 Electron beam lithography apparatus and pattern forming method 失效
标题翻译：电子束光刻设备和图案形成方法
公开(公告)号：US06511048B1
公开(公告)日：2003-01-28
申请号：US09191383
申请日：1998-11-13
申请人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
发明人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.
摘要翻译：一种电子束光刻设备和用于在单元掩模的周围精确地写入图案的半导体器件图案形成方法，从而以高产率制造大规模集成电路和精细结构器件。具有较低孔径率的单元图形位于外围，并且具有较高孔径率的单元图形位于更接近于采用单元投影的本发明设备的第二掩模上提供的每个孔组内的中心部分。示例性地，在用于半导体器件制造的掩模上，用于形成线图案和栅极图案的单元图形位于中央，并且用于形成孔图案的单元图形周边地定位在每个孔组中。这允许在每个孔径组中精确地写入外围定位的图形。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式