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41. 发明授权

US07232761B2 Method of chemical mechanical polishing with high throughput and low dishing 失效
标题翻译：化学机械抛光方法，具有高通量和低凹陷
公开(公告)号：US07232761B2
公开(公告)日：2007-06-19
申请号：US10924417
申请日：2004-08-24
申请人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
发明人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
IPC分类号： H01L21/461
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
摘要翻译：提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除残留导电材料。在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

42. 发明授权

US07220322B1 Cu CMP polishing pad cleaning 失效
标题翻译： Cu CMP抛光垫清洗
公开(公告)号：US07220322B1
公开(公告)日：2007-05-22
申请号：US09645690
申请日：2000-08-24
申请人： Lizhong Sun , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Shijian Li , Fred C. Redeker
IPC分类号： B08B7/04 , H01L21/302
CPC分类号： B24B53/017
摘要： A polishing pad is cleaned of Cu CMP by-products, subsequent to planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising about 0.1 to about 3.0 wt. % of at least one organic compound having one or more amine or amide groups, an acid or a base in an amount sufficient to adjust the pH of the composition to about 5.0 to about 12.0, the remainder water. Embodiments comprise ex situ cleaning of a rotating polishing pad by applying a solution having a pH of about 5.0 to about 12.0 at a flow rate of about 100 to about 600 ml/min. for about 3 to about 20 seconds after polishing a wafer having a Cu-containing surface and then removing the cleaning solution from the polishing pad by high pressure rinsing with water.
摘要翻译：在平坦化晶片之后，将抛光垫清除为Cu CMP副产物，通过向抛光垫表面施加包含约0.1至约3.0重量％的组合物的组合物来减少垫玻璃。％的至少一种具有一个或多个胺或酰胺基团的有机化合物，酸或碱的量足以将组合物的pH调节至约5.0至约12.0，其余为水。实施例包括通过以约100至约600ml / min的流速施加pH为约5.0至约12.0的溶液来旋转抛光垫的原位清洁。在研磨具有含Cu表面的晶片之后约3至约20秒，然后通过用水高压冲洗从抛光垫除去清洁溶液。

43. 发明授权

US06991517B2 Linear polishing sheet with window 失效
公开(公告)号：US06991517B2
公开(公告)日：2006-01-31
申请号：US10814405
申请日：2004-03-31
申请人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
发明人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
IPC分类号： B24B1/00
CPC分类号： B24B37/005 , B24B21/04 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

44. 发明申请

US20050282380A1 METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR SUBSTRATES 失效
标题翻译：半导体基板的化学机械抛光方法与装置
公开(公告)号：US20050282380A1
公开(公告)日：2005-12-22
申请号：US10972191
申请日：2004-10-22
申请人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
发明人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
IPC分类号： B24B37/04 , B24B49/16 , H01L21/321 , H01L21/768 , H01L21/00 , B24B49/00 , B24B51/00 , H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
摘要翻译：提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。磨料的百分比。抛光工艺可以集成到多步抛光工艺中。

45. 发明申请

US20050153561A1 Chemical mechanical polishing a substrate having a filler layer and a stop layer 有权
公开(公告)号：US20050153561A1
公开(公告)日：2005-07-14
申请号：US11075778
申请日：2005-03-08
申请人： Raymond Jin , Shijian Li , Fred Redeker , Thomas Osterheld
发明人： Raymond Jin , Shijian Li , Fred Redeker , Thomas Osterheld
IPC分类号： B24B37/04 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L21/76
CPC分类号： H01L21/76819 , B24B37/04 , B24B37/042 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.

46. 发明申请

US20050150454A1 Deposition chamber and method for depositing low dielectric constant films 有权
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US20050150454A1
公开(公告)日：2005-07-14
申请号：US10997311
申请日：2004-11-23
申请人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
发明人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
IPC分类号： C23C16/44 , C23C14/34 , C23C16/40 , C23C16/455 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内底物支撑。将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

47. 发明授权

US06863794B2 Method and apparatus for forming metal layers 失效
标题翻译：用于形成金属层的方法和装置
公开(公告)号：US06863794B2
公开(公告)日：2005-03-08
申请号：US09961134
申请日：2001-09-21
申请人： Stan Tsai , Shijian Li
发明人： Stan Tsai , Shijian Li
IPC分类号： B23H5/08 , C25D5/18 , C25D5/22 , C25D5/06 , C25D11/32 , H01L21/288
CPC分类号： C25D5/18 , B23H5/08 , C25D5/22
摘要： A method of forming a metal layer on a substrate is disclosed. The metal layer is formed using a combined electrochemical plating/electrochemical mechanical polishing (ECP/EMP) process. In the ECP/EMP process, the metal layer is deposited on the substrate by contacting the substrate with a porous pad and then alternately applying a first electrical potential and a second electrical potential to an electrolyte plating solution. The first electrical potential functions to deposit metal on the substrate while the second electrical potential functions to remove metal from topographic portions thereof.
摘要翻译：公开了一种在基板上形成金属层的方法。使用组合的电化学电镀/电化学机械抛光（ECP / EMP）工艺形成金属层。在ECP / EMP工艺中，通过使衬底与多孔焊盘接触而将金属层沉积在衬底上，然后交替地向电解镀液中施加第一电位和第二电位。第一电势用于将金属沉积在衬底上，而第二电势用于从其地形部分去除金属。

48. 发明授权

US06833052B2 Deposition chamber and method for depositing low dielectric constant films 失效
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US06833052B2
公开(公告)日：2004-12-21
申请号：US10283565
申请日：2002-10-29
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23F1600
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

49. 发明授权

US06780773B2 Method of chemical mechanical polishing with high throughput and low dishing 失效
标题翻译：化学机械抛光方法，具有高通量和低凹陷
公开(公告)号：US06780773B2
公开(公告)日：2004-08-24
申请号：US10193469
申请日：2002-07-11
申请人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
发明人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
IPC分类号： H01L21641
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
摘要翻译：提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除残留导电材料。在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

50. 发明授权

US06613200B2 Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform 失效
标题翻译：电化学镀层减薄，并与化学机械抛光机整合成单个平台
公开(公告)号：US06613200B2
公开(公告)日：2003-09-02
申请号：US09770559
申请日：2001-01-26
申请人： Shijian Li , Stan D. Tsai , Lizhong Sun
发明人： Shijian Li , Stan D. Tsai , Lizhong Sun
IPC分类号： C25D1700
CPC分类号： B24B37/32 , B24B37/046 , C25D17/001 , H01L21/2885 , H01L21/3212
摘要： An apparatus is provided for depositing and polishing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a basin, a cover, a permeable disc, an anode and a polishing head. The permeable disc is disposed in the basin between the cover and the basin's bottom. The cover has an aperture disposed therein that includes a plurality of pins. The pins extend radially into the aperture and are adapted to support the substrate. The anode is disposed in the basin between the disc and the bottom of the basin. The polishing head is adapted to retain the substrate during processing and includes a retaining ring. The retaining ring has a plurality of grooves disposed therein that mate with the pins when the polishing head is disposed in the aperture. When the substrate is biased via the pins, the potential between the substrate and the anode causes material to be deposited on the substrate's surface.
摘要翻译：提供了一种用于在衬底上沉积和抛光材料层的装置。在一个实施例中，提供了一种装置，其包括盆，盖，可渗透盘，阳极和抛光头。可渗透盘设置在盖和盆底之间的盆中。盖具有设置在其中的孔，其包括多个销。销钉径向延伸到孔中并且适于支撑基底。阳极设置在圆盘和盆底之间的盆中。抛光头适于在加工过程中保持基底并且包括保持环。保持环具有设置在其中的多个槽，当抛光头设置在孔中时与该销相配合。当衬底经由引脚偏置时，衬底和阳极之间的电势使材料沉积在衬底的表面上。

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