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41. 发明申请

US20070298585A1 DIELECTRIC DEPOSITION AND ETCH BACK PROCESSES FOR BOTTOM UP GAPFILL 有权
标题翻译：用于底盖的介电沉积和回填工艺
公开(公告)号：US20070298585A1
公开(公告)日：2007-12-27
申请号：US11765944
申请日：2007-06-20
申请人： Dmitry Lubomirsky , Srinivas Nemani , Ellie Yieh
发明人： Dmitry Lubomirsky , Srinivas Nemani , Ellie Yieh
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.
摘要翻译：描述了减少电介质层中的膜破裂的方法。所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。

42. 发明申请

US20070281106A1 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：US20070281106A1
公开(公告)日：2007-12-06
申请号：US11754924
申请日：2007-05-29
申请人： Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien Chuc , Ellie Yieh
发明人： Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien Chuc , Ellie Yieh
IPC分类号： H05H1/24
CPC分类号： C23C16/45502 , C23C16/401 , C23C16/402 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , C23C16/4586 , C23C16/505 , C23C16/509 , C23C16/52 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32724 , H01J37/32752 , H01J2237/2001 , H01J2237/3321 , H01L21/02164 , H01L21/02274 , H01L21/76224
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。反应性自由基前体可以通过顶部入口提供给沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

43. 发明申请

US20050199489A1 Electroless deposition apparatus 审中-公开
标题翻译：无电沉积装置
公开(公告)号：US20050199489A1
公开(公告)日：2005-09-15
申请号：US11090919
申请日：2005-03-25
申请人： Joseph Stevens , Dmitry Lubomirsky , Ian Pancham , Donald Olgado , Howard Grunes , Yeuk-Fai Mok
发明人： Joseph Stevens , Dmitry Lubomirsky , Ian Pancham , Donald Olgado , Howard Grunes , Yeuk-Fai Mok
IPC分类号： C23C18/18 , C23C18/16 , C25D7/12 , H01L21/00 , H01L21/28 , H01L21/288 , C25C7/00
CPC分类号： H01L21/67126 , C23C18/1607 , C23C18/1619 , C23C18/1628 , C23C18/165 , C23C18/1653 , C23C18/1678 , C25D7/123 , C25D17/001
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

44. 发明申请

US20050181226A1 Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber 审中-公开
公开(公告)号：US20050181226A1
公开(公告)日：2005-08-18
申请号：US11040962
申请日：2005-01-22
申请人： Timothy Weidman , Ian Pancham , Dmitry Lubomirsky , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Farhad Moghadam
发明人： Timothy Weidman , Ian Pancham , Dmitry Lubomirsky , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Farhad Moghadam
IPC分类号： C23C18/16 , C23C18/50 , H01L21/02 , H01L21/288 , H01L21/768 , B05C3/00 , B05D1/18
CPC分类号： C23C18/1683 , C23C18/1619 , C23C18/1651 , C23C18/50 , H01L21/02068 , H01L21/02074 , H01L21/288 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76874 , Y10T428/12
摘要： A method and apparatus for electrolessly depositing a multilayer film using a fluid processing solution(s) that can clean and then electrolessly deposit a metal films having discrete or varying composition onto a conductive surface using a single processing cell. The process advantageously includes in-situ cleaning step in order to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen (e.g., air) between the cleaning step and an electroless deposition process step(s). In one aspect, the chemical components used in the fluid processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids, generate particles in the fluid lines or on the surface of the substrate, and/or generate a significant amount of heat which can damage the hardware or significantly change the electroless process results. In another aspect, no rinsing steps are required between the various deposition steps used to form the various layers, since the processing fluids are selected so that they are compatible with each other. In another aspect, throughout the process the conductive surfaces are continually in contact with various chemical components that will inhibit oxidation of the conductive surfaces and/or reduce the oxidized metal surfaces. In one aspect, a multilayer structure can formed on the surface of the conductive surface using the continuous electroless deposition process where the first layer of the multilayer structure has at least two of the following elements cobalt (Co), tungsten (W), phosphorus (P) or boron (B); and a second layer contains at least two of the following elements cobalt (Co), boron (B) or phosphorus (P). Formation of a multilayer structure on the conductive surface may have advantage since each deposited layer can have differing properties which when placed together will form a layer that has improved properties over a single deposited layer.

45. 发明申请

US20050081785A1 Apparatus for electroless deposition 有权
标题翻译：无电沉积装置
公开(公告)号：US20050081785A1
公开(公告)日：2005-04-21
申请号：US10965220
申请日：2004-10-14
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian Pancham , Sergey Lopatin
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian Pancham , Sergey Lopatin
IPC分类号： B05C3/00 , B05C19/02 , C23C18/16 , C23C18/28 , C23F1/00 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.
摘要翻译：本发明的实施例通常提供流体处理平台。平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元和主机机器人。

46. 发明授权

US06742279B2 Apparatus and method for rinsing substrates 失效
标题翻译：用于漂洗底物的装置和方法
公开(公告)号：US06742279B2
公开(公告)日：2004-06-01
申请号：US10052015
申请日：2002-01-16
申请人： Dmitry Lubomirsky , Joseph J. Stevens
发明人： Dmitry Lubomirsky , Joseph J. Stevens
IPC分类号： F26B508
CPC分类号： H01L21/67028 , Y10S134/902
摘要： Embodiments of the invention provide a spin rinse dry (SRD) chamber for a semiconductor processing system. The SRD chamber includes a selectively rotatable substrate support member having an upper substrate receiving surface formed thereon, and a selectively rotatable shield member positioned above the upper substrate receiving surface, the rotatable shield member having a substantially planar lower surface that may be selectively positioned proximate the upper substrate. Embodiments of the invention further provide a method for rinsing semiconductor substrates, including the steps of positioning the substrate on a substrate support member, positioning a shield member having a substantially planar lower surface in a processing position above the substrate such that the substantially planar lower surface is in parallel orientation with an upper surface of the substrate, and flowing a fluid solution into a processing region defined by the upper surface of the substrate and the substantially planar lower surface via a fluid aperture in the substantially planar lower surface.
摘要翻译：本发明的实施例提供了一种用于半导体处理系统的旋转冲洗干燥（SRD）室。 SRD室包括一个有选择地旋转的基板支撑件，其具有形成在其上的上基板接收表面，以及位于上基板接收表面上方的可选择地旋转的屏蔽件，该可旋转屏蔽件具有基本平坦的下表面，上基板。本发明的实施例还提供了一种用于冲洗半导体衬底的方法，包括以下步骤：将衬底定位在衬底支撑构件上，将具有基本平坦的下表面的屏蔽构件定位在衬底上方的处理位置，使得基本平坦的下表面与基底的上表面平行取向，并且使流体溶液经由基本平坦的下表面中的流体孔流动到由基底的上表面和基本上平坦的下表面限定的处理区域中。

47. 发明授权

US06537011B1 Method and apparatus for transferring and supporting a substrate 失效
标题翻译：用于转移和支撑衬底的方法和装置
公开(公告)号：US06537011B1
公开(公告)日：2003-03-25
申请号：US09629322
申请日：2000-07-31
申请人： Danny Wang , Dmitry Lubomirsky , Erwin Polar , Brigitte Stoehr , Mark Wiltse , Yeuk-Fai Edwin Mok , Frank C. Ma
发明人： Danny Wang , Dmitry Lubomirsky , Erwin Polar , Brigitte Stoehr , Mark Wiltse , Yeuk-Fai Edwin Mok , Frank C. Ma
IPC分类号： B65G4907
CPC分类号： H01L21/68707 , H01L21/68721 , H01L21/68785 , Y10S414/141
摘要： A method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system. In one aspect, a support ring having one or more substrate support members mounted thereon and defining a central opening therein for receipt of a substrate support member during processing is disclosed. In another aspect, a substrate handler blade having a plurality of substrate supports disposed thereon is provided which is adapted to support a substrate thereon and effectuate substrate transfer between the substrate handler blade and the support ring.
摘要翻译：一种用于在半导体晶片处理系统中支撑和传送衬底的方法和装置。在一个方面，公开了一种支撑环，其具有安装在其上的一个或多个基板支撑构件并且在处理期间限定用于接收基板支撑构件的中心开口。在另一方面，提供一种其上设置有多个基板支撑件的基板处理器刀片，其适于在其上支撑基板并且实现基板处理器刀片和支撑环之间的基板传送。

48. 发明授权

US08771538B2 Plasma source design 有权
标题翻译：等离子源设计
公开(公告)号：US08771538B2
公开(公告)日：2014-07-08
申请号：US12949661
申请日：2010-11-18
申请人： Dmitry Lubomirsky , Jang-Gyoo Yang , Matthew Miller , Jay Pinson , Kien Chuc
发明人： Dmitry Lubomirsky , Jang-Gyoo Yang , Matthew Miller , Jay Pinson , Kien Chuc
IPC分类号： B44C1/22 , H01J37/32
CPC分类号： H01J37/32357 , H01J37/3211
摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.
摘要翻译：本发明的实施例通常提供一种等离子体源装置及其使用方法，其能够通过使用电磁能量在等离子体产生区域内产生自由基和/或气体离子，所述等离子体产生区域围绕磁芯元件对称地定位资源。通常，等离子体产生区域和磁芯的取向和形状允许将输送的电磁能量有效均匀地耦合到设置在等离子体产生区域中的气体。通常，等离子体产生区域中形成的等离子体的改进的特性能够改善在设置在等离子体产生区域下游的衬底或处理室的一部分上进行的沉积，蚀刻和/或清洁过程。

49. 发明申请

US20130082197A1 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
公开(公告)号：US20130082197A1
公开(公告)日：2013-04-04
申请号：US13251714
申请日：2011-10-03
申请人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
发明人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
IPC分类号： G21K1/00
CPC分类号： H01J37/32091 , H01J37/32422
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

50. 发明申请

US20130023122A1 METHOD OF MULTIPLE PATTERNING OF A LOW-K DIELECTRIC FILM 有权
标题翻译：低K电介质薄膜的多种方法的方法
公开(公告)号：US20130023122A1
公开(公告)日：2013-01-24
申请号：US13187304
申请日：2011-07-20
申请人： Srinivas D. Nemani , Yifeng Zhou , Dmitry Lubomirsky , Ellie Yieh
发明人： Srinivas D. Nemani , Yifeng Zhou , Dmitry Lubomirsky , Ellie Yieh
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/02126 , H01L21/02203 , H01L21/3105 , H01L21/31138 , H01L21/31144 , H01L21/76802 , H01L21/76811 , H01L21/76813 , H01L21/76826
摘要： Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. A second mask layer is formed and patterned above the first mask layer. A pattern of the second mask layer is transferred at least partially into the low-k dielectric layer by modifying first exposed portions of the low-k dielectric layer with a first plasma process and removing the modified portions of the low-k dielectric layer. Subsequently, a pattern of the first mask layer is transferred at least partially into the low-k dielectric layer by modifying second exposed portions of the low-k dielectric layer with a second plasma process and removing the modified portions of the low-k dielectric layer.
摘要翻译：描述了低k电介质膜的多次图案化方法。例如，一种方法包括在低k电介质层上形成和图案化第一掩模层，低k电介质层设置在衬底之上。第二掩模层在第一掩模层之上形成并图案化。通过用第一等离子体处理修改低k电介质层的第一暴露部分并去除低k电介质层的修改部分，将第二掩模层的图案至少部分地转移到低k电介质层中。随后，通过用第二等离子体处理修改低k电介质层的第二暴露部分，将第一掩模层的图案至少部分地转移到低k电介质层中，并且去除低k电介质层的修饰部分。

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