专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050199489A1 Electroless deposition apparatus 审中-公开
标题翻译：无电沉积装置
公开(公告)号：US20050199489A1
公开(公告)日：2005-09-15
申请号：US11090919
申请日：2005-03-25
申请人： Joseph Stevens , Dmitry Lubomirsky , Ian Pancham , Donald Olgado , Howard Grunes , Yeuk-Fai Mok
发明人： Joseph Stevens , Dmitry Lubomirsky , Ian Pancham , Donald Olgado , Howard Grunes , Yeuk-Fai Mok
IPC分类号： C23C18/18 , C23C18/16 , C25D7/12 , H01L21/00 , H01L21/28 , H01L21/288 , C25C7/00
CPC分类号： H01L21/67126 , C23C18/1607 , C23C18/1619 , C23C18/1628 , C23C18/165 , C23C18/1653 , C23C18/1678 , C25D7/123 , C25D17/001
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

2. 发明申请

US20070044719A1 PROCESSING CHAMBER CONFIGURED FOR UNIFORM GAS FLOW 失效
标题翻译：加气室配置均匀气体流量
公开(公告)号：US20070044719A1
公开(公告)日：2007-03-01
申请号：US11552727
申请日：2006-10-25
申请人： Vincent Ku , Ling Chen , Howard Grunes , Hua Chung
发明人： Vincent Ku , Ling Chen , Howard Grunes , Hua Chung
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/4409 , C23C16/4412 , C23C16/45521 , C23C16/4585
摘要： An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.
摘要翻译：提供了一种在处理室中进行均匀气体流动的装置和方法。在一个实施例中，一种装置是一种边缘环，其包括具有从其突出的环形密封件的环形主体。密封件联接到环形体的与适于安置在基板支撑件上的一侧相对的一侧。在另一个实施例中，提供了一种处理系统，其包括室主体，盖，衬底支撑件和多个流量控制孔。盖子设置在室主体上并且与其限定内部容积。衬底支撑件设置在内部容积中并且至少部分地限定具有盖子的处理区域。流量控制孔布置在基板支撑件和盖子之间。流量控制孔适于控制离开处理区域的气体流。

3. 发明授权

US5810931A High aspect ratio clamp ring 失效
标题翻译：高长宽比夹环
公开(公告)号：US5810931A
公开(公告)日：1998-09-22
申请号：US692932
申请日：1996-07-30
申请人： Joe Stevens , Howard Grunes , Igor Kogan
发明人： Joe Stevens , Howard Grunes , Igor Kogan
IPC分类号： H01L21/683 , H01L21/203 , H01L21/205 , H01L21/687 , C23C16/00 , B05C13/00 , C23C14/00 , C23F1/02
CPC分类号： H01L21/68721
摘要： The present invention provides a method and apparatus for protecting the edge of a substrate and securing the substrate to the support member during processing. The present invention preferably provides minimal contact with the substrate and provides improved edge exclusion. Support tabs extend inwardly from the lower roof surface to support the apparatus on the substrate and the inner terminus of the apparatus approaches the edge of the substrate to provide the improved edge exclusion. A variable height lower roof surface is provided over the edge of the substrate to provide an effective increased roof aspect ratio (width of the roof:height of the roof above the substrate) over the edge of the substrate which reduces the likelihood that a bridging layer will form between the apparatus and the substrate or beyond the substrate.
摘要翻译：本发明提供了一种用于在加工过程中保护基板的边缘并将基板固定到支撑部件上的方法和装置。本发明优选提供与基底的最小接触并提供改进的边缘排除。支撑片从下屋顶表面向内延伸以支撑衬底上的装置，并且装置的内端靠近衬底的边缘以提供改进的边缘排除。在衬底的边缘上设置可变的高度较低的屋顶表面，以在衬底的边缘上提供有效增加的屋顶纵横比（屋顶的宽度：衬底上方的屋顶的高度），这降低了桥接层将在该设备和该基板之间或超过该基板之间形成。

4. 发明授权

US06783639B2 Coils for generating a plasma and for sputtering 有权
公开(公告)号：US06783639B2
公开(公告)日：2004-08-31
申请号：US10052951
申请日：2002-01-17
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3402
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

5. 发明授权

US06368469B1 Coils for generating a plasma and for sputtering 失效
公开(公告)号：US06368469B1
公开(公告)日：2002-04-09
申请号：US08851946
申请日：1997-05-06
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3402
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

6. 发明授权

US5857368A Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion 失效
标题翻译：用于通过高压挤压在半导体衬底中制造金属路径的装置和方法
公开(公告)号：US5857368A
公开(公告)日：1999-01-12
申请号：US561614
申请日：1995-11-21
申请人： Howard Grunes , Stephen J. Blumenkranz , Eric C. Williams , Richard Koch Reber
发明人： Howard Grunes , Stephen J. Blumenkranz , Eric C. Williams , Richard Koch Reber
IPC分类号： H01L21/00 , B21D26/02
CPC分类号： H01L21/67126 , Y10T29/49993
摘要： A high pressure metallization apparatus provides a chamber for enclosing or enveloping a substrate in a high pressure environment, and thereby extrude a film layer into any voids in the covers holes or trenches thereon. The high pressure is maintained in a pressure chamber, which is substantially enclosed within a vacuum chamber. The apparatus includes a positioning member which relatively rigidly positions the pressure chamber plugs during high pressure operations, and also allows separation of the plugs to enable pressure chamber access. The apparatus is configured for relatively rapid access to the internal components thereof, for rapid service and cleaning turnaround. Additionally, the chamber is configured to have minimal relative movement between the structural elements thereof, to reduce particle generation in the apparatus.
摘要翻译：高压金属化装置提供用于在高压环境中包封或包封衬底的室，从而将膜层挤压到其上的覆盖孔或沟槽中的任何空隙中。高压保持在压力室中，该压力室基本上封闭在真空室内。该装置包括定位构件，该定位构件在高压操作期间相对刚性地定位压力腔塞，并且还允许分离塞以使压力室进入。该装置被配置为相对快速地访问其内部组件，以用于快速的服务和清洁周转。另外，腔室被构造成在其结构元件之间具有最小的相对运动，以减少装置中的颗粒产生。

7. 发明授权

US06799939B2 Multiple independent robot assembly and apparatus for processing and transferring semiconductor wafers 失效
标题翻译：用于处理和转移半导体晶片的多个独立的机器人组件和设备
公开(公告)号：US06799939B2
公开(公告)日：2004-10-05
申请号：US10378864
申请日：2003-03-05
申请人： Robert B. Lowrance , Howard Grunes
发明人： Robert B. Lowrance , Howard Grunes
IPC分类号： B66F1100
CPC分类号： H01L21/67742 , H01L21/68707 , H01L21/68742 , Y10S414/135
摘要： A robot assembly including multiple independently operable robot assemblies are provided for use in semiconductor wafer processing. The robot assembly includes independent co-axial upper and lower robot assemblies adapted to handle multiple objects. The upper robot is stacked above the lower robot and the two robots are mounted concentrically to allow fast wafer transfer. Concentric drive mechanisms may also be provided for imparting rotary motion to either rotate the robot assembly or extend an extendable arm assembly into an adjacent chamber. Each robot can be either a single blade robot or a dual blade robot. Also provided is an apparatus for processing semiconductor wafers comprising a pre/post process transfer chamber housing multiple independent robot assemblies and surrounded by a plurality of pre-process chambers and post process chambers. Within each process, pre-process and post-process chamber is an apparatus for holding a plurality of stacked wafers. The apparatus includes a wafer lifting and storing apparatus exhibiting a plurality of vertically movable lift pins surrounding the chamber pedestal. The lift pins are configured to receive and hold a plurality of stacked wafers, preferably two, therein.
摘要翻译：提供了包括多个可独立操作的机器人组件的机器人组件，用于半导体晶片处理。机器人组件包括适于处理多个物体的独立的同轴上下机器人组件。上部机器人堆叠在下部机器人的上方，两个机器人同心安装以允许快速的晶片传送。也可以提供同心驱动机构用于赋予旋转运动以旋转机器人组件或将可伸展臂组件延伸到相邻的腔室中。每个机器人可以是单刀片机器人或双刀片机器人。还提供了一种用于处理半导体晶片的装置，其包括容纳多个独立机器人组件并被多个预处理室和后处理室包围的前/后处理转移室。在每个过程中，预处理室和后处理室是用于保持多个堆叠的晶片的装置。该装置包括晶片提升和存储装置，其显示围绕室底座的多个可垂直移动的提升销。提升销被配置为在其中接收和保持多个堆叠的晶片，优选地两个。

8. 发明授权

US6102164A Multiple independent robot assembly and apparatus for processing and transferring semiconductor wafers 失效
公开(公告)号：US6102164A
公开(公告)日：2000-08-15
申请号：US608237
申请日：1996-02-28
申请人： William McClintock , Robert B. Lowrance , Howard Grunes
发明人： William McClintock , Robert B. Lowrance , Howard Grunes
IPC分类号： B25J9/06 , B25J18/02 , B65G49/07 , H01L21/677 , H01L21/687 , B65G35/00
CPC分类号： H01L21/67742 , H01L21/68707 , H01L21/68742 , Y10S414/135
摘要： A robot assembly including multiple independently operable robot assemblies are provided for use in semiconductor wafer processing. The robot assembly includes independent co-axial upper and lower robot assemblies adapted to handle multiple objects. The upper robot is stacked above the lower robot and the two robots are mounted concentrically to allow fast wafer transfer. Concentric drive mechanisms may also be provided for imparting rotary motion to either rotate the robot assembly or extend an extendable arm assembly into an adjacent chamber. Each robot can be either a single blade robot or a dual blade robot. Also provided is an apparatus for processing semiconductor wafers comprising a pre/post process transfer chamber housing multiple independent robot assemblies and surrounded by a plurality of pre-process chambers and post process chambers. Within each process, pre-process and post-process chamber is an apparatus for holding a plurality of stacked wafers. The apparatus includes a wafer lifting and storing apparatus exhibiting a plurality of vertically movable lift pins surrounding the chamber pedestal. The lift pins are configured to receive and hold a plurality of stacked wafers, preferably two, therein.

9. 发明授权

US5447409A Robot assembly 失效
标题翻译：机器人装配
公开(公告)号：US5447409A
公开(公告)日：1995-09-05
申请号：US226101
申请日：1994-04-11
申请人： Howard Grunes , Avi Tepman , Robert Lowrance
发明人： Howard Grunes , Avi Tepman , Robert Lowrance
IPC分类号： B25J9/10 , B25J9/12 , B25J21/00 , H01L21/673 , H01L21/677 , B25J18/00
CPC分类号： B25J9/107 , B25J21/005 , B25J9/126 , H01L21/67742 , Y10S414/13 , Y10S414/135 , Y10S414/139 , Y10T74/20317
摘要： A robot assembly, including a central hub, has two arms arranged for independent rotation about the hub. Two carriers, oriented 180.degree. apart from each other, are coupled to an end of each of the arms. A drive is provided for rotating the arms in opposite directions to extend one or the other of said carriers radially from said central hub, and for rotating the arms in the same direction to effect rotation of the carriers.
摘要翻译：包括中心轮毂的机器人组件具有布置成围绕轮毂独立旋转的两个臂。两个彼此相隔180度的载体被联接到每个臂的端部。提供驱动器用于沿相反方向旋转臂以使所述载体中的一个或另一个从所述中心毂径向延伸，并且用于沿相同方向旋转臂以实现载体的旋转。

10. 发明授权

US5228501A Physical vapor deposition clamping mechanism and heater/cooler 失效
标题翻译：物理气相沉积夹紧机构和加热器/冷却器
公开(公告)号：US5228501A
公开(公告)日：1993-07-20
申请号：US939542
申请日：1992-09-02
申请人： Avi Tepman , Howard Grunes , Dana Andrews
发明人： Avi Tepman , Howard Grunes , Dana Andrews
IPC分类号： C23C14/50 , H01J37/32 , H01L21/00 , H01L21/687
CPC分类号： H01L21/68721 , C23C14/50 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32862 , H01L21/67069 , H01L21/68735 , Y10T29/41
摘要： A clamping ring and temperature regulated platen for clamping a wafer to the platen and regulating the temperature of the wafer. The force of the clamping ring against the wafer is produced by the weight of the clamping ring. A roof shields all but a few contact regions of the interface between the wafer and clamp from receiving depositing particles so that a coating formed on the wafer makes continuous contact with the clamping ring in only a few narrow regions that act as conductive bridges when the depositing layer is conductive.
摘要翻译：用于将晶片夹持到压板并调节晶片的温度的夹紧环和温度调节压板。夹紧环抵靠晶片的力由夹紧环的重量产生。屋顶屏蔽来自接收沉积颗粒的晶片和夹具之间的接口的所有除了几个接触区域，使得形成在晶片上的涂层在仅存在几个狭窄区域中与夹紧环连续接触，当狭缝区域当存在层是导电的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式