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1. 发明申请

US20160035610A1 ELECTROSTATIC CHUCK ASSEMBLIES HAVING RECESSED SUPPORT SURFACES, SEMICONDUCTOR FABRICATING APPARATUSES HAVING THE SAME, AND PLASMA TREATMENT METHODS USING THE SAME 审中-公开
标题翻译：具有被接受支撑表面的静电冲击组件，具有该表面的半导体制造装置以及使用其的等离子体处理方法
公开(公告)号：US20160035610A1
公开(公告)日：2016-02-04
申请号：US14803833
申请日：2015-07-20
申请人： Myoung Soo Park , Hakyoung Kim , Junho Im , Jang Gyoo Yang
发明人： Myoung Soo Park , Hakyoung Kim , Junho Im , Jang Gyoo Yang
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6833 , H01J37/32568 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/67109 , H01L21/67248 , H01L21/6875
摘要： An electrostatic chuck apparatus includes a base and a dielectric layer on the base. The dielectric layer includes a support surface opposite the base and a clamping electrode laterally extending along the support surface. The clamping electrode extends beyond an edge of the support surface such that the support surface is laterally recessed relative to the clamping electrode. The clamping electrode is configured to attract a substrate to the support surface by electrostatic force, and laterally extends along the support surface up to or beyond an edge of the substrate. Related electrostatic chuck assemblies, semiconductor fabricating apparatuses having the same, and plasma treatment methods using the same are also discussed.
摘要翻译：静电吸盘装置包括基座和基座上的电介质层。电介质层包括与基座相对的支撑表面和沿着支撑表面横向延伸的夹持电极。夹持电极延伸超过支撑表面的边缘，使得支撑表面相对于夹持电极横向凹进。夹持电极构造成通过静电力将基板吸引到支撑表面，并且沿着支撑表面横向延伸直到或超过基板的边缘。还讨论了相关的静电卡盘组件，具有该静电卡盘组件的半导体制造装置和使用其的等离子体处理方法。

2. 发明授权

US08894767B2 Flow control features of CVD chambers 有权
标题翻译： CVD室的流量控制特征
公开(公告)号：US08894767B2
公开(公告)日：2014-11-25
申请号：US12836726
申请日：2010-07-15
申请人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
发明人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
IPC分类号： C23C16/00 , C23F1/00 , C23C16/455 , H01J37/32 , C23C16/452
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的装置和方法。一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个第三孔。

3. 发明授权

US08742665B2 Plasma source design 有权
公开(公告)号：US08742665B2
公开(公告)日：2014-06-03
申请号：US12905940
申请日：2010-10-15
申请人： Dmitry Lubomirsky , Jang-Gyoo Yang , Matthew Miller , Jay Pinson , Kien Chuc
发明人： Dmitry Lubomirsky , Jang-Gyoo Yang , Matthew Miller , Jay Pinson , Kien Chuc
IPC分类号： H05B31/26
CPC分类号： H01J37/3211 , H01J37/32357
摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

4. 发明申请

US20110165347A1 DIELECTRIC FILM FORMATION USING INERT GAS EXCITATION 失效
标题翻译：使用入侵气体激励的电介质膜形成
公开(公告)号：US20110165347A1
公开(公告)日：2011-07-07
申请号：US12874886
申请日：2010-09-02
申请人： Matthew L. Miller , Jang-Gyoo Yang
发明人： Matthew L. Miller , Jang-Gyoo Yang
IPC分类号： H05H1/24
CPC分类号： H01L21/02222 , C23C16/045 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32449 , H01J2237/3327 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02326
摘要： Methods of forming a silicon-and-nitrogen-containing layers and silicon oxide layers are described. The methods include the steps of mixing a carbon-free silicon-containing precursor with plasma effluents, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layers may be made flowable or conformal by selection of the flow rate of excited effluents from a remote plasma region into the substrate processing region. The plasma effluents are formed in a plasma by flowing inert gas(es) into the plasma. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.
摘要翻译：描述形成含硅和氮的层和氧化硅层的方法。所述方法包括将无碳含硅前体与等离子体流出物混合，以及在衬底上沉积含硅和氮的层的步骤。可以通过选择从远程等离子体区域到基板处理区域的激发流出物的流量来使含硅和氮的层可流动或共形。等离子体流出物通过将惰性气体流入等离子体而形成在等离子体中。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。

5. 发明授权

US07955986B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US07955986B2
公开(公告)日：2011-06-07
申请号：US11360944
申请日：2006-02-23
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/40 , C23C16/00 , C23C16/505 , C23C16/52 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

6. 发明申请

US20090277587A1 FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES 审中-公开
标题翻译：流动电介质设备和工艺
公开(公告)号：US20090277587A1
公开(公告)日：2009-11-12
申请号：US12210940
申请日：2008-09-15
申请人： Dmitry Lubomirsky , Qiwei Liang , Jang Gyoo Yang
发明人： Dmitry Lubomirsky , Qiwei Liang , Jang Gyoo Yang
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/452 , C23C16/45574 , C23C16/507 , H01J37/32082 , H01J37/32357 , H01J37/3244
摘要： Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.
摘要翻译：描述了可以包括具有能够保持不同于外部室压力的内部室压力的内部的处理室的基板处理系统。该系统还可以包括可操作以在处理室内部产生等离子体的远程等离子体系统。此外，系统可以包括可操作以将第一处理气体从远程等离子体系统输送到处理室的内部的第一处理气体通道，以及可操作以输送未被处理室处理的第二处理气体的第二处理气体通道远程等离子体系统。第二工艺气体通道具有通向处理室内部的远端，并且至少部分地被第一工艺气体通道包围。

7. 发明申请

US20090250335A1 Method of controlling plasma distribution uniformity by superposition of different constant solenoid fields 审中-公开
标题翻译：通过叠加不同恒定电磁场控制等离子体分布均匀性的方法
公开(公告)号：US20090250335A1
公开(公告)日：2009-10-08
申请号：US12082097
申请日：2008-04-07
申请人： Daniel J. Hoffman , Ezra Robert Gold , Douglas H. Burns , Douglas A. Buchberger, JR. , Michael Charles Kutney , Jang Gyoo Yang
发明人： Daniel J. Hoffman , Ezra Robert Gold , Douglas H. Burns , Douglas A. Buchberger, JR. , Michael Charles Kutney , Jang Gyoo Yang
IPC分类号： H05H1/24
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32706
摘要： A method for processing a workpiece in a plasma reactor having a set of n coils includes constructing, for each one of the n coils, a set of plasma distributions for discrete values of coil current in a predetermined current range. The distributions are grouped, each group having one distribution for each of the n coils, and being a unique set of n distributions. A combined plasma distribution is computed from each group of distributions. The variance of each combined distribution is computed. The method further includes finding an optimum one of the combined distributions having an at least nearly minimum variance, and identifying the n coil currents associated with the optimum distribution. During plasma processing of the workpiece, currents through the coils are maintained at levels corresponding to the n coil currents associated with the one combined distribution.
摘要翻译：一种用于处理具有一组n个线圈的等离子体电抗器中的工件的方法包括为n个线圈中的每个线圈构建用于在预定电流范围内的线圈电流的离散值的一组等离子体分布。分布分组，每组具有n个线圈中的每一个的一个分布，并且是n个分布的唯一集合。从每组分布计算组合等离子体分布。计算每个组合分布的方差。该方法还包括找到具有至少接近最小方差的组合分布中的最佳一个，并且识别与最佳分布相关联的n个线圈电流。在工件的等离子体处理期间，通过线圈的电流保持在与一个组合分布相关联的n个线圈电流的水平。

8. 发明申请

US20090004873A1 HYBRID ETCH CHAMBER WITH DECOUPLED PLASMA CONTROLS 审中-公开
标题翻译：具有解压等离子体控制的混合隔离室
公开(公告)号：US20090004873A1
公开(公告)日：2009-01-01
申请号：US11749069
申请日：2007-06-26
申请人： Jang Gyoo Yang , Michael Barnes , Terry Bluck
发明人： Jang Gyoo Yang , Michael Barnes , Terry Bluck
IPC分类号： H01L21/461 , H01L21/306
CPC分类号： H01J37/321 , H01J37/32091 , H01J37/32165
摘要： A dielectric etch chamber and method for improved control of plasma parameters. The plasma chamber comprises dual-frequency bias source that capacitively couples the RF energy to the plasma, and a single or dual frequency source that inductively couples the RF energy to the plasma. The inductive source may be modulated for improved etch uniformity.
摘要翻译：一种用于改进等离子体参数控制的电介质蚀刻室和方法。等离子体室包括将RF能量电容耦合到等离子体的双频偏置源，以及将RF能量感应耦合到等离子体的单频或双频源。感应源可以被调制以提高蚀刻均匀性。

9. 发明授权

US07141757B2 Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent 有权
标题翻译：具有顶部RF源功率电极的等离子体反应器具有几乎不受压力的共振
公开(公告)号：US07141757B2
公开(公告)日：2006-11-28
申请号：US10778620
申请日：2004-02-13
申请人： Daniel Hoffman , Jang Gyoo Yang , Douglas A. Buchberger, Jr. , Douglas Burns
发明人： Daniel Hoffman , Jang Gyoo Yang , Douglas A. Buchberger, Jr. , Douglas Burns
IPC分类号： B23K10/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32183 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor operable over a very wide process window of pressure, source power and bias power includes a resonant circuit consisting of an overhead electrode having a first impedance, a wafer support pedestal having a second impedance and a bulk plasma having a third impedance and generally lying in a process zone between the overhead electrode and the wafer support pedestal, the magnitudes of the impedances of the overhead electrode and the wafer support pedestal being within an order of magnitude of one another, the resonant circuit having a resonant frequency determined by the first, second and third impedances.
摘要翻译：等离子体反应器可在非常宽的压力，功率和偏置功率的工艺窗口上操作，包括由具有第一阻抗的高架电极组成的谐振电路，具有第二阻抗的晶片支撑基座和具有第三阻抗的体积等离子体位于架空电极和晶片支撑基座之间的处理区域中，架空电极和晶片支撑台座的阻抗的大小彼此在一个数量级之内，谐振电路具有由第一第二和第三阻力。

10. 发明授权

US06900596B2 Capacitively coupled plasma reactor with uniform radial distribution of plasma 有权
标题翻译：电容耦合等离子体反应器具有均匀的等离子体径向分布
公开(公告)号：US06900596B2
公开(公告)日：2005-05-31
申请号：US10235988
申请日：2002-09-04
申请人： Jang Gyoo Yang , Daniel J. Hoffman , James D. Carducci , Douglas A. Buchberger, Jr. , Melissa Hagen , Matthew L. Miller , Kang-Lie Chiang , Gerardo A. Delgadino
发明人： Robert B. Hagen
IPC分类号： H01J37/32 , H01J7/24
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.
摘要翻译：用于处理半导体晶片的等离子体反应器包括限定腔室的侧壁和顶棚顶板，腔室内的工件支撑阴极具有面向天花板的工作表面，用于支撑半导体工件，用于将工艺气体引入到工作气体入口室和具有偏置功率频率的RF偏置功率发生器。在工作表面有一个偏置的馈电点，RF导体连接在RF偏置发电机和工作表面的偏置功率馈电点之间。介质套管围绕RF导体的一部分，套筒具有沿着RF导体的轴向长度，介电常数和沿着RF导体的轴向位置，套筒的长度，介电常数和位置使得套筒提供一种提高工作表面等离子体离子密度均匀性的电抗。根据另一方面，反应器可以包括具有大致对应于工件周边的内径的环形RF耦合环，RF耦合环在工作表面和顶置电极之间延伸足够的距离部分以增强等离子体离子密度在工件周边附近。

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