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31. 发明授权

US09271695B2 Apparatus for mammography with acoustic matching 有权
标题翻译：用于具有声匹配的乳房X线照相术的装置
公开(公告)号：US09271695B2
公开(公告)日：2016-03-01
申请号：US13512662
申请日：2011-01-26
申请人： Toshinobu Tokita , Yasuhiro Someda
发明人： Toshinobu Tokita , Yasuhiro Someda
IPC分类号： A61B8/00 , A61B8/08 , A61B5/00
CPC分类号： A61B8/0825 , A61B5/0095 , A61B8/4281
摘要： The present invention employs a measuring apparatus having: a holding plate for holding a subject; an acoustic matching member provided between the subject and the holding plate; and a probe for receiving an acoustic wave propagating through the subject via the acoustic matching member and the holding plate, wherein the acoustic matching member includes a first portion that contacts the subject and a second portion that contacts the holding plate, and the second portion has greater rigidity than the first portion.
摘要翻译：本发明采用一种测量装置，其具有：用于保持被检体的保持板; 设置在所述被检体和所述保持板之间的声匹配部件; 以及用于经由所述声匹配部件和所述保持板接收通过所述被检体传播的声波的探针，其中所述声匹配部件包括接触被检体的第一部分和与所述保持板接触的第二部分，并且所述第二部分具有比第一部分具有更大的刚度。

32. 发明授权

US09226662B2 Photoacoustic apparatus 有权
标题翻译：光声设备
公开(公告)号：US09226662B2
公开(公告)日：2016-01-05
申请号：US12908232
申请日：2010-10-20
申请人： Yasuhiro Someda
发明人： Yasuhiro Someda
IPC分类号： G06F19/00 , G01D18/00 , A61B5/00 , A61B8/08 , G01N21/17
CPC分类号： A61B5/0095 , A61B5/0059 , A61B5/0062 , A61B8/08 , A61B2576/00 , G01N21/1702
摘要： In a photoacoustic apparatus, a light source irradiates an inspection target with pulsed light; a detector detects acoustic waves generated in the inspection target due to interaction of the pulsed light with the inspection target, and outputs detection signals corresponding to the detected acoustic waves; a light-quantity measurement unit measures the quantity of the light output from the light source; and a signal processor obtains information on an inside of the inspection target by using the detection signals output from the detector. The signal processor also corrects intensities of the detection signals so as to suppress variations in intensities of the detection signals caused by a temporal change in the quantity of the light.
摘要翻译：在光声装置中，光源用脉冲光照射检查对象物; 检测器检测由于脉冲光与检查对象的相互作用而在检查对象物中产生的声波，并且输出与检测到的声波相对应的检测信号; 光量测量单元测量从光源输出的光量; 并且信号处理器通过使用从检测器输出的检测信号来获取关于检查对象的内部的信息。信号处理器还校正检测信号的强度，以便抑制由光量的时间变化引起的检测信号的强度变化。

33. 发明授权

US07378668B2 Method and apparatus for applying charged particle beam 有权
标题翻译：用于施加带电粒子束的方法和装置
公开(公告)号：US07378668B2
公开(公告)日：2008-05-27
申请号：US11475014
申请日：2006-06-27
申请人： Sayaka Tanimoto , Yasunari Sohda , Yasuhiro Someda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yasuhiro Someda , Masaki Hosoda
IPC分类号： H01J3/14 , G21K1/08
CPC分类号： H01J37/304 , B82Y10/00 , B82Y40/00 , H01J37/1471 , H01J37/3174 , H01J2237/0458 , H01J2237/1501 , H01J2237/31774 , H01J2237/31776
摘要： In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.
摘要翻译：在诸如电子束光刻系统的带电粒子束施加装置中，存在促进交叉的位置调整并提高装置的生产量的技术。聚光透镜的前焦平面设置有用于调节光束轴上的交叉点的高度的尖端（交叉调节边缘）。通过使用交叉调节边缘来测量电子束的形状，即使电子枪形成的交叉点的高度或电子枪的电阻，也可以始终检查聚光透镜的前焦平面上的光束的形状源形成透镜改变。

34. 发明申请

US20060056131A1 Charged particle beam application system 有权
标题翻译：带电粒子束应用系统
公开(公告)号：US20060056131A1
公开(公告)日：2006-03-16
申请号：US11221815
申请日：2005-09-09
申请人： Sayaka Tanimoto , Yasunari Soda , Masakazu Sugaya , Hiroshi Tooyama , Takeshi Tsutsumi , Yasuhiro Someda
发明人： Sayaka Tanimoto , Yasunari Soda , Masakazu Sugaya , Hiroshi Tooyama , Takeshi Tsutsumi , Yasuhiro Someda
IPC分类号： H01T23/00
CPC分类号： G03F7/2059 , H01J2237/0044 , H01J2237/3175 , H01L21/6833
摘要： During the writing operation, the wafer potential is dynamically detected and corrected. By doing so, the positional accuracy of the circuit patterns written on a wafer can be improved. After a contact resistance between a wafer and a earth pin is measured, the current flowing from the wafer to the ground potential via the earth pin is measured. Then, based on the measurement result, the potential difference is given between the wafer and the ground potential.
摘要翻译：在写入操作期间，动态地检测和校正晶片电位。通过这样做，能够提高写入晶片的电路图案的位置精度。在测量晶片和接地引脚之间的接触电阻之后，测量通过接地引脚从晶片流到接地电位的电流。然后，基于测量结果，在晶片和地电位之间给出电位差。

35. 发明申请

US20060006342A1 Mechanism for sealing 有权
标题翻译：密封机构
公开(公告)号：US20060006342A1
公开(公告)日：2006-01-12
申请号：US11155633
申请日：2005-06-20
申请人： Masaki Hosoda , Masato Muraki , Yasuhiro Someda , Mahito Negishi , Koichi Wakizaka , Masakazu Sugaya
发明人： Masaki Hosoda , Masato Muraki , Yasuhiro Someda , Mahito Negishi , Koichi Wakizaka , Masakazu Sugaya
IPC分类号： G01F23/00
CPC分类号： H01J37/3007 , H01J9/18 , H01J37/04 , H01J2237/1205 , H01J2237/151 , H01J2237/166 , H01J2237/31774 , Y10T403/32713
摘要： An assembly having first and second members arranged through a sealing member sandwiched between them is disclosed. The second member has a reference portion having a reference surface. The assembly includes a pressing portion which presses the first member against the reference surface in a direction substantially parallel to a surface of the second member. The second member is fixed to the first member while the first member abuts against the reference surface and the sealing member is compressed between the first and second members.
摘要翻译：公开了一种具有通过夹在它们之间的密封构件布置的第一和第二构件的组件。第二构件具有具有参考表面的参考部分。该组件包括按照大致平行于第二构件的表面的方向将第一构件压靠参考表面的按压部分。第二构件固定在第一构件上，而第一构件抵靠参考面，并且密封构件在第一构件和第二构件之间被压缩。

36. 发明授权

US06583431B2 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06583431B2
公开(公告)日：2003-06-24
申请号：US10105257
申请日：2002-03-26
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

37. 发明授权

US06262428B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
标题翻译：用于在半导体上形成图案的带电粒子束光刻设备
公开(公告)号：US06262428B1
公开(公告)日：2001-07-17
申请号：US09621577
申请日：2000-07-21
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
摘要翻译：为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过通过其他模板掩模的透射孔，同时用光束偏转装置选择在模板掩模上的孔，传送孔被连续地用于掩模传送方向，模板掩模在与梁一起传播的同时移动，而其它模板掩模当指定的模板掩模孔组被曝光时执行传送。重复这些操作，以便执行所有曝光处理。

38. 发明授权

US5396077A Electron beam lithography apparatus having electron optics correction system 失效
标题翻译：具有电子光学校正系统的电子束光刻设备
公开(公告)号：US5396077A
公开(公告)日：1995-03-07
申请号：US213737
申请日：1994-03-16
申请人： Yasunari Sohda , Hiroyuki Itoh , Yasuhiro Someda , Yoshinori Nakayama , Hidetoshi Satoh , Genya Matsuoka
发明人： Yasunari Sohda , Hiroyuki Itoh , Yasuhiro Someda , Yoshinori Nakayama , Hidetoshi Satoh , Genya Matsuoka
IPC分类号： H01L21/027 , H01J37/244 , H01J37/26 , H01J37/317 , H01J37/304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30455
摘要： An electron beam apparatus used in a cell projection method has a system for correcting the electron optics. A figured electron beam that has been passed through a cell having a complex figure shape is directed onto a stage on which a substrate is positioned. A fine hole is formed in the substrate and an electron detector is positioned underneath the fine hole to receive the electrons that pass through the fine hole. The output signal of the electron detector is processed to provide a representation of the degree of focus and astigmatism correction of the electron optics. When a line and space pattern is used to shape the electron beam, the output signal from the electron detector has a series of peak intensity values that, when maximized, indicate an optimum correction of the electron optics. Optionally, a limited aperture is positioned between the substrate having a fine hole and the electron detector to limit the detection of scattered electrons that have not passed through the fine hole.
摘要翻译：在电池投影方法中使用的电子束装置具有用于校正电子光学的系统。已经通过具有复杂图形形状的单元的图形电子束被引导到其上定位有基板的台上。在基板中形成细孔，电子检测器位于细孔下方，以接收穿过细孔的电子。处理电子检测器的输出信号以提供电子光学的聚焦和像散校正的表示。当使用线和空间图案来形成电子束时，来自电子检测器的输出信号具有一系列峰值强度值，当最大化时，其表示电子光学的最佳校正。可选地，有限孔被定位在具有细孔的基板和电子检测器之间，以限制未通过细孔的散射电子的检测。

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