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1. 发明授权

US07408760B2 Charged particle beam application system 有权
标题翻译：带电粒子束应用系统
公开(公告)号：US07408760B2
公开(公告)日：2008-08-05
申请号：US11221815
申请日：2005-09-09
申请人： Sayaka Tanimoto , Yasunari Soda , Masakazu Sugaya , Hiroshi Tooyama , Takeshi Tsutsumi , Yasuhiro Someda
发明人： Sayaka Tanimoto , Yasunari Soda , Masakazu Sugaya , Hiroshi Tooyama , Takeshi Tsutsumi , Yasuhiro Someda
IPC分类号： H01L21/683
CPC分类号： G03F7/2059 , H01J2237/0044 , H01J2237/3175 , H01L21/6833
摘要： During the writing operation, the wafer potential is dynamically detected and corrected. By doing so, the positional accuracy of the circuit patterns written on a wafer can be improved. After a contact resistance between a wafer and a earth pin is measured, the current flowing from the wafer to the ground potential via the earth pin is measured. Then, based on the measurement result, the potential difference is given between the wafer and the ground potential.
摘要翻译：在写入操作期间，动态地检测和校正晶片电位。通过这样做，能够提高写入晶片的电路图案的位置精度。在测量晶片和接地引脚之间的接触电阻之后，测量通过接地引脚从晶片流到接地电位的电流。然后，基于测量结果，在晶片和地电位之间给出电位差。

2. 发明申请

US20060056131A1 Charged particle beam application system 有权
标题翻译：带电粒子束应用系统
公开(公告)号：US20060056131A1
公开(公告)日：2006-03-16
申请号：US11221815
申请日：2005-09-09
申请人： Sayaka Tanimoto , Yasunari Soda , Masakazu Sugaya , Hiroshi Tooyama , Takeshi Tsutsumi , Yasuhiro Someda
发明人： Sayaka Tanimoto , Yasunari Soda , Masakazu Sugaya , Hiroshi Tooyama , Takeshi Tsutsumi , Yasuhiro Someda
IPC分类号： H01T23/00
CPC分类号： G03F7/2059 , H01J2237/0044 , H01J2237/3175 , H01L21/6833
摘要： During the writing operation, the wafer potential is dynamically detected and corrected. By doing so, the positional accuracy of the circuit patterns written on a wafer can be improved. After a contact resistance between a wafer and a earth pin is measured, the current flowing from the wafer to the ground potential via the earth pin is measured. Then, based on the measurement result, the potential difference is given between the wafer and the ground potential.
摘要翻译：在写入操作期间，动态地检测和校正晶片电位。通过这样做，能够提高写入晶片的电路图案的位置精度。在测量晶片和接地引脚之间的接触电阻之后，测量通过接地引脚从晶片流到接地电位的电流。然后，基于测量结果，在晶片和地电位之间给出电位差。

3. 发明授权

US5017458A Method for production of graft copolymer, pattern replication method, and base polymer and resist for graft copolymerization 失效
标题翻译：生产接枝共聚物的方法，图案复制方法和基础聚合物和接枝共聚抗蚀剂
公开(公告)号：US5017458A
公开(公告)日：1991-05-21
申请号：US354116
申请日：1989-05-22
申请人： Yasunari Soda , Kozo Mochiji , Hiroaki Oizumi , Takeshi Kimura
发明人： Yasunari Soda , Kozo Mochiji , Hiroaki Oizumi , Takeshi Kimura
IPC分类号： G03F7/004 , C08F2/46 , C08F291/00 , C08F291/18 , G03F7/38 , H01L21/027 , H01L21/30
CPC分类号： C08F291/18 , G03F7/38 , Y10S430/143 , Y10S430/168 , Y10S522/915
摘要： The method for production of a graft copolymer according to the present invention includes the step of adding to a base polymer capable of forming first radicals when irradiated with radiation an additive capable of combining with said first radicals to form second radicals stable against oxygen, the step of irradiating said base polymer containing the additive with radiation, and the step of introducing a monomer under an atmosphere free from oxygen, thereby to graft copolymerize said irradiated base polymer and said monomer.
摘要翻译：根据本发明的接枝共聚物的制备方法包括以下步骤：当用辐射照射能够与所述第一自由基结合的添加剂以形成对氧稳定的第二自由基时，能够形成第一自由基的基础聚合物，所述步骤用辐射照射含有添加剂的所述基础聚合物，以及在无氧气氛下引入单体的步骤，从而使所述照射的基础聚合物和所述单体接枝共聚。

4. 发明授权

US4960676A Method for forming pattern by using graft copolymerization 失效
标题翻译：通过接枝共聚形成图案的方法
公开(公告)号：US4960676A
公开(公告)日：1990-10-02
申请号：US199712
申请日：1988-05-27
申请人： Kozo Mochiji , Hiroaki Oizumi , Yasunari Soda , Takeshi Kimura
发明人： Kozo Mochiji , Hiroaki Oizumi , Yasunari Soda , Takeshi Kimura
IPC分类号： G03F7/027 , G03F7/38 , H05K3/00
CPC分类号： H05K3/0079 , G03F7/027 , G03F7/38 , H05K2203/0511 , H05K2203/086 , H05K2203/087 , Y10S430/168
摘要： The method for forming a pattern according to the present invention comprises a step of irradiating a resist layer applied on a substrate to be worked with X-ray radiation through a mask in an oxygen-containing atomsphere to expose said resist layer, a step of decomposing a peroxide produced within said exposed resist layer in an atmosphere free from oxygen, a step of introducing a monomer into said atmosphere free from oxygen to conduct graft copolymerization of said resist layer at the exposed portion with said monomer, and a step of developing said resist layer to remove said resist layer at the portion remaining ungrafted.

5. 发明授权

US4981771A Pattern fabricating method 失效
标题翻译：图案制作方法
公开(公告)号：US4981771A
公开(公告)日：1991-01-01
申请号：US309026
申请日：1989-02-07
申请人： Kozo Mochiji , Yasunari Soda , Takeshi Kimura
发明人： Kozo Mochiji , Yasunari Soda , Takeshi Kimura
IPC分类号： G03F1/22 , G03F7/20
CPC分类号： G03F1/22 , G03F7/2061 , Y10S430/168
摘要： When a pattern is to be fabricated by a lithography using radiation on a heavy metal layer formed on a substrate, secondary electrons are generated in a diverging form from the heavy metal layer by irradiation with a radioactive ray to expose the resist. As a result, the accuracy of the pattern to be formed on the resist is reduced. In order to prevent this, a layer to be transferred, a substrate to be worked, a mask and so on are formed with a film capable of absorbing the secondary electrons so that secondary electrons generated from the heavy metal layer may not reach the resist film. Although a pattern having a thickness of 2 microns or less could not be fabricated according to the prior art, a pattern as thin as 1.5 microns can be fabricated by the method of the present invention.
摘要翻译：当通过使用在衬底上形成的重金属层上的辐射进行光刻来制造图案时，通过用放射线照射而从重金属层以分散的形式产生二次电子以暴露抗蚀剂。结果，降低了在抗蚀剂上形成的图案的精度。为了防止这种情况，可以用能够吸收二次电子的膜形成待转移层，待加工基板，掩模等，使得从重金属层产生的二次电子可能不到达抗蚀剂膜。虽然根据现有技术不能制造2微米或更小的厚度的图案，但是可以通过本发明的方法制造薄至1.5微米的图案。

6. 发明授权

US4954424A Pattern fabrication by radiation-induced graft copolymerization 失效
标题翻译：通过辐射诱导接枝共聚的图案制作
公开(公告)号：US4954424A
公开(公告)日：1990-09-04
申请号：US295209
申请日：1988-12-20
申请人： Kozo Mochiji , Hiroaki Oizumi , Yasunari Soda , Taro Ogawa , Takeshi Kimura
发明人： Kozo Mochiji , Hiroaki Oizumi , Yasunari Soda , Taro Ogawa , Takeshi Kimura
IPC分类号： G03C5/00 , G03F7/00 , G03F7/027 , G03F7/038 , G03F7/38 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065
CPC分类号： G03F7/027 , G03F7/38 , Y10S430/168
摘要： The present invention provides a method of pattern fabrication by radiation-induced graft copolymerization which enables not only the fabrication of a very fine resist pattern in a very small exposure dosage but also excellent etching fabrication by utilizing the current dry etching process through the pattern fabrication by making use of a resist capable of causing radiation-induced graft copolymerization and having excellent dry etching resistance, i.e., a poly(methacrylate) having a phenyl group, polystyrene, or its derivative.
摘要翻译： PCT No.PCT / JP88 / 00691 Sec。 371日期：1988年12月20日 102（e）日期1988年12月20日PCT提交1988年7月11日PCT公布。第WO89 / 01187号公报日本1989年2月9日。本发明提供了一种通过辐射诱导的接枝共聚的图案制造方法，其不仅能够以非常小的曝光量制造非常精细的抗蚀剂图案，而且还利用电流干燥通过利用能够引起辐射诱导的接枝共聚和耐干蚀刻性优异的抗蚀剂，即具有苯基，聚苯乙烯或其衍生物的聚（甲基丙烯酸酯）的抗蚀剂进行图案制造的蚀刻工艺。

7. 发明授权

US4701940A Linearly polarized X-ray patterning process 失效
标题翻译：线性极化X射线图案化工艺
公开(公告)号：US4701940A
公开(公告)日：1987-10-20
申请号：US790116
申请日：1985-10-22
申请人： Yasunari Soda , Kozo Mochiji , Takeshi Kimura , Hidehito Obayashyi
发明人： Yasunari Soda , Kozo Mochiji , Takeshi Kimura , Hidehito Obayashyi
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G21K5/00
CPC分类号： G03F9/7065 , G03F7/2039 , G03F7/70566
摘要： A process of X-Y lithography including providing a linearly polarized X-ray, and irradiating a resist on a substrate through a mask with the linearly polarized X-ray to form a pattern shape which is utilized for production of, for example, a semiconductor device or magnetic bubble memory device.
摘要翻译：一种XY平版印刷方法，包括提供线性偏振X射线，并通过具有线性偏振X射线的掩模在基片上照射抗蚀剂，以形成用于生产例如半导体器件或磁性气泡记忆装置。

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