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1. 发明授权

US06762421B2 Charged particle beam exposure apparatus and exposure method 失效
公开(公告)号：US06762421B2
公开(公告)日：2004-07-13
申请号：US10092161
申请日：2002-03-07
申请人： Tetsuro Nakasugi
发明人： Tetsuro Nakasugi
IPC分类号： H01J37304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/3175 , Y10S430/143
摘要： A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.

2. 发明授权

US06710352B2 Charged particle measuring apparatus 失效
标题翻译：带电粒子测量仪
公开(公告)号：US06710352B2
公开(公告)日：2004-03-23
申请号：US10330701
申请日：2002-12-27
申请人： Jun Kikuchi , Haruhisa Matsumoto , Hideki Koshiishi , Takashi Nozaki , Shigeru Takehisa
发明人： Jun Kikuchi , Haruhisa Matsumoto , Hideki Koshiishi , Takashi Nozaki , Shigeru Takehisa
IPC分类号： H01J37304
CPC分类号： G01T1/38 , G01T1/242 , G01T1/247
摘要： A charged particle measuring apparatus discriminates the types of charged particles accurately and the energy precisely, measures high-energy charged particles precisely, and detects a failure of the apparatus to continue measurement in a mode corresponding to the failure. Outputs from first and second detectors are used as first and second addresses, respectively. The second detector includes a plurality of detectors. The output from a third detector is used as information about whether or not certain charged particles penetrate the second detector. The loss energy characteristics of charged particles to be measured are expressed in the first and second addresses. The number of times the charged particles are measured for loss energy are counted with respect to the addresses. When the series of detectors constituting the first, second, and third detectors suffers a failure, a measurement mode excluding any failed detector is employed to continue measurement.
摘要翻译：带电粒子测量装置精确地识别带电粒子的类型并精确地识别能量，精确地测量高能量带电粒子，并且以对应于故障的模式检测装置继续测量的故障。来自第一和第二检测器的输出分别用作第一和第二地址。第二检测器包括多个检测器。使用来自第三检测器的输出作为关于某些带电粒子是否穿透第二检测器的信息。要测量的带电粒子的损耗能量特性在第一和第二地址中表示。相对于地址对带电粒子的损耗能量的测量次数进行计数。当构成第一，第二和第三检测器的一系列检测器发生故障时，采用不包括任何故障检测器的测量模式来继续测量。

3. 发明授权

US06555833B2 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06555833B2
公开(公告)日：2003-04-29
申请号：US10194003
申请日：2002-07-15
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which greatly increases a pattern projection speed, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

4. 发明授权

US06472673B1 Lithographic method for producing an exposure pattern on a substrate 有权
标题翻译：用于在基板上产生曝光图案的平版印刷方法
公开(公告)号：US06472673B1
公开(公告)日：2002-10-29
申请号：US09363019
申请日：1999-07-29
申请人： Alfred Chalupka , Ernst Haugeneder
发明人： Alfred Chalupka , Ernst Haugeneder
IPC分类号： H01J37304
CPC分类号： G03F1/20 , G03F7/2022 , G03F7/70466 , H01J37/3026
摘要： For producing an exposure pattern on a resist material layer on a substrate, a mask having a pattern of transparent structures is illuminated with a beam of energetic radiation and the structure pattern is imaged onto the substrate by means of the structured beam within a pattern transfer system such as an ion-beam lithography system. The pattern image produced on the substrate is shifted laterally with respect to the substrate between a plurality of predetermined shift positions and with each shift position the substrate is irradiated for a predetermined time, wherein the width of lateral displacements is smaller than the minimum feature size of the exposure pattern, the blur as determined by the pattern transfer system is not smaller than the width of lateral displacements, and the dimension and/or direction of the structure patterns are incongruent with respect to the lateral displacements. Thus on the substrate, the exposures superpose into a spatial distribution of exposure dose which exceeds the specific minimum exposure dose of the resist material only within the desired regions of the exposure pattern.
摘要翻译：为了在基板上的抗蚀剂材料层上产生曝光图案，具有透明结构图案的掩模用能量辐射束照射，并且结构图案通过图案转印系统内的结构化波束成像到基板上例如离子束光刻系统。在基板上产生的图案图像在多个预定位移位置之间相对于基板横向偏移，并且每个位移基板被照射预定时间，其中横向位移的宽度小于曝光图案，由图案转印系统确定的模糊不小于横向位移的宽度，并且结构图案的尺寸和/或方向相对于横向位移是不一致的。因此，在基板上，曝光将曝光剂量的空间分布叠加到仅在曝光图案的期望区域内超过抗蚀剂材料的特定最小曝光剂量。

5. 发明授权

US06420700B2 Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US06420700B2
公开(公告)日：2002-07-16
申请号：US09826913
申请日：2001-04-06
申请人： Yoshihisa Ooaeh , Kenichi Kawakami
发明人： Yoshihisa Ooaeh , Kenichi Kawakami
IPC分类号： H01J37304
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还提出了一种用于执行该方法的装置。

6. 发明授权

US06407398B1 Electron beam exposure apparatus and exposure method 失效
标题翻译：电子束曝光装置和曝光方法
公开(公告)号：US06407398B1
公开(公告)日：2002-06-18
申请号：US09442588
申请日：1999-11-17
申请人： Masaki Kurokawa , Tatsuro Ohkawa , Yoshihisa Ooae
发明人： Masaki Kurokawa , Tatsuro Ohkawa , Yoshihisa Ooae
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J37/3174
摘要： An electron beam exposure apparatus, enabling detection of the height of a sample simply and with a high accuracy, including an electron gun, a converging unit able to converge an electron beam on a sample and make the focus position dynamically move, a deflecting unit for deflecting the electron beam, a movement mechanism for carrying and moving the sample, a deflection data and incident angle relationship storing circuit for storing the incident angle of the electron beam on the sample when the electron beam is deflected by the deflecting unit, a mark position detecting unit for detecting changes in reflected electrons at a mark provided on the sample when scanning the mark by the electron beam and thereby detecting the position of the mark, a mark position difference calculating unit for using the mark position detecting unit to scan a first mark provided on the sample by an electron beam of a first incident angle and a second mark in a predetermined positional relationship with the first mark by an electron beam of a second incident angle different from the first incident angle to detect the positions of the first and second marks and calculating the difference in the positional relationship of the first and second marks detected and the predetermined positional relationship, and a height calculating unit for calculating the height of the sample from the difference of the positional relationship of the first and second marks calculated and the relationship of the deflection data and incident angle.
摘要翻译：一种电子束曝光装置，其能够简单且高精度地检测样品的高度，包括电子枪，能够使电子束聚集在样品上并使聚焦位置动态移动的会聚单元;偏转单元，用于偏转电子束，用于携带和移动样品的移动机构，偏转数据和入射角关系存储电路，用于当电子束被偏转单元偏转时，存储电子束在样品上的入射角;标记位置检测单元，用于当通过电子束扫描标记时检测在样品上提供的标记的反射电子的变化，从而检测标记的位置;标记位置差计算单元，用于使用标记位置检测单元扫描第一标记通过第一入射角的电子束和与该第一入射角度的预定位置关系的第二标记在样品上通过不同于第一入射角的第二入射角的电子束进行标记，以检测第一和第二标记的位置，并计算检测到的第一和第二标记的位置关系与预定位置关系之间的差异，以及高度计算单元，用于根据所计算的第一和第二标记的位置关系与偏转数据与入射角的关系的差异来计算样本的高度。

7. 发明授权

US06332962B1 Thin-film magnetic recording head manufacture using selective imaging 失效
标题翻译：使用选择性成像制造薄膜磁记录头
公开(公告)号：US06332962B1
公开(公告)日：2001-12-25
申请号：US09070559
申请日：1998-04-30
申请人： Gregory J. Athas , Russel Mello
发明人： Gregory J. Athas , Russel Mello
IPC分类号： H01J37304
CPC分类号： G11B5/3967 , G11B5/1871 , G11B5/3116 , G11B5/3163 , G11B5/3166 , H01J37/3056 , H01J2237/30438
摘要： A focused particle beam system, according to one embodiment of the invention, precisely shapes a pole-tip assembly formed by a multi-layer device having a first layer with a first structural element, a second layer with a second structural element, and a shielding layer with a shielding element, the shielding element being located between the first layer and the second layer. The focused particle beam system mills the second structural element without irradiating a first structural element. The system images a selected portion of the multi-layer device to locate the shielding element and thereby avoids irradiating the first structural element. The shielding element separates the first structural element from the second structural element. Based on the location of the shielding element, the system images and mills the second structural element without irradiating the first structural element. In this manner, the focused particle beam system mills the second structural element to produce a desired pole-tip configuration. By producing a desired pole-tip configuration, these methods and apparatus produce a recording transducer capable of high storage density.
摘要翻译：根据本发明的一个实施例的聚焦粒子束系统精确地形成由具有第一层与第一结构元件的多层器件形成的极尖组件，具有第二结构元件的第二层和屏蔽层所述屏蔽元件位于所述第一层和所述第二层之间。聚焦粒子束系统对第二结构元件进行研磨而不照射第一结构元件。系统对多层设备的选定部分进行成像以定位屏蔽元件，从而避免照射第一结构元件。屏蔽元件将第一结构元件与第二结构元件分开。基于屏蔽元件的位置，系统对第二结构元件进行成像和研磨，而不照射第一结构元件。以这种方式，聚焦的粒子束系统研磨第二结构元件以产生期望的极尖构造。通过产生期望的极尖构造，这些方法和装置产生能够高存储密度的记录换能器。

8. 发明授权

US06800864B2 Method and structure for reducing effects of noise and resonance associated with an e-beam lithography tool 失效
公开(公告)号：US06800864B2
公开(公告)日：2004-10-05
申请号：US10284511
申请日：2002-10-29
申请人： Michael Edward Scaman
发明人： Michael Edward Scaman
IPC分类号： H01J37304
CPC分类号： H01J37/304 , H01J2237/30433 , H01J2237/30455 , H01J2237/30461
摘要： An apparatus and method for reducing noise and resonance detractors connected with and E beam tool. The invention provides a plurality of embodiments. In one embodiment, the E beam tool will be calibrated and the results will be then filtered to counter the effects of the noise afterwards. In an alternate embodiment of the present invention, a filter is applied in the actual feedback of the E beam tool for the writing cycle.

9. 发明授权

US06580072B1 Method for performing failure analysis on copper metallization 失效
标题翻译：对铜金属化进行故障分析的方法
公开(公告)号：US06580072B1
公开(公告)日：2003-06-17
申请号：US09564058
申请日：2000-05-03
申请人： Jonathan Cheang-Whang Chang , Brian J. Wollard
发明人： Jonathan Cheang-Whang Chang , Brian J. Wollard
IPC分类号： H01J37304
CPC分类号： H01L21/76888 , G01R31/2898 , G01R31/303 , H01J2237/3174 , H01L21/32131 , H01L21/76892
摘要： Described are methods of adapting FIB techniques to copper metallization, and to structures that result from the application of such techniques. A method in accordance with the invention can be used to sever copper traces without damaging adjacent material or creating conductive bridges to adjacent traces. Semiconductor devices that employ copper traces typically include a protective passivation layer that protects the copper. This passivation layer is removed to render the copper traces visible to an FIB operator. The copper surface is then oxidized, as by heating the device in air, to form a copper-oxide layer on the exposed copper. With the copper-oxide layer in place, an FIB is used to mill through the copper-oxide and copper layers of a selected copper trace to sever the trace. The copper-oxide layer protects copper surfaces away from the mill site from reactive chemicals used during the milling process. In one embodiment, a copper-oxide layer of at least 40 nanometers thick affords adequate protection.
摘要翻译：描述了将FIB技术应用于铜金属化的方法以及由这种技术的应用产生的结构。根据本发明的方法可用于切割铜迹线而不损坏相邻材料或者产生与相邻迹线的导电桥。采用铜迹线的半导体器件通常包括保护铜的保护钝化层。该钝化层被去除以使铜迹线可见于FIB操作者。然后通过在空气中加热该装置来将铜表面氧化，以在暴露的铜上形成氧化铜层。在氧化铜层就位的情况下，使用FIB来研磨选定的铜迹线的铜氧化物层和铜层以切断痕迹。铜氧化物层保护铜表面远离磨机位置免受在铣削过程中使用的反应性化学物质的影响。在一个实施例中，至少40纳米厚的氧化铜层提供足够的保护。

10. 发明授权

US06407397B1 Charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置
公开(公告)号：US06407397B1
公开(公告)日：2002-06-18
申请号：US09339685
申请日：1999-06-24
申请人： Isamu Seto
发明人： Isamu Seto
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30433 , H01J2237/30461
摘要： Pattern data correction controllers 64i are provided one for each column, correction operation processing is performed on exposure data according to the characteristics of each corresponding column, the operation processing time corresponding to the exposure processing cycle required in the corresponding column is computed from data SD1, SCD1, WDM1, WDS1 indicating a per-shot exposure time, exposure time correction value, and settling waiting time generated based on the correction operation processing, a maximum value is detected from among the operation processing times computed by the respective pattern data correction controllers and, based on data PCD representing the operation processing time of the maximum value thus detected, an operation processing clock CK is generated and supplied to correction operation processing blocks 72 to 74 in the respective pattern data correction controllers.
摘要翻译：对于每列设置一个图形数据校正控制器64i，根据每个相应列的特性对曝光数据执行校正操作处理，根据数据SD1计算与相应列中所需的曝光处理周期相对应的操作处理时间， SCD1，WDM1，WDS1表示每次曝光时间，曝光时间校正值和基于校正操作处理产生的建立等待时间，从由各个图案数据校正控制器计算的操作处理时间和基于表示这样检测出的最大值的运算处理时间的数据PCD，产生运算处理时钟CK，并将其提供给各图案数据校正控制器的修正运算处理部72〜74。

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