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1. 发明授权

US06555833B2 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06555833B2
公开(公告)日：2003-04-29
申请号：US10194003
申请日：2002-07-15
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which greatly increases a pattern projection speed, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

2. 发明授权

US6121625A Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US6121625A
公开(公告)日：2000-09-19
申请号：US87296
申请日：1998-05-29
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： G03F7/20 , C08F10/02 , G03F1/20 , H01J37/147 , H01J37/317 , H01L21/027 , H01J37/304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

3. 发明授权

US06509572B2 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06509572B2
公开(公告)日：2003-01-21
申请号：US10105284
申请日：2002-03-26
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

4. 发明授权

US06441383B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
标题翻译：用于在半导体上形成图案的带电粒子束光刻设备
公开(公告)号：US06441383B1
公开(公告)日：2002-08-27
申请号：US09814062
申请日：2001-03-22
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil masks with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
摘要翻译：为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择光圈，传送孔径被连续地用于掩模传送方向，模板掩模在与光束一起传播的同时被移动，而其它模版当指定的模板掩模孔组被曝光时，执行掩模转印。重复这些操作，以便执行所有曝光处理。

5. 发明授权

US06320198B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06320198B1
公开(公告)日：2001-11-20
申请号：US09621707
申请日：2000-07-21
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

6. 发明授权

US06329665B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
标题翻译：用于在半导体上形成图案的带电粒子束光刻设备
公开(公告)号：US06329665B1
公开(公告)日：2001-12-11
申请号：US09621708
申请日：2000-07-21
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
摘要翻译：为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择孔，将传播孔连续地提供给掩模传送方向，模板掩模在与梁一起传播的同时被移动，而其它模版当指定的模板掩模孔组被曝光时，执行掩模转印。重复这些操作，以便执行所有曝光处理。

7. 发明授权

US06583431B2 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06583431B2
公开(公告)日：2003-06-24
申请号：US10105257
申请日：2002-03-26
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

8. 发明授权

US06262428B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
标题翻译：用于在半导体上形成图案的带电粒子束光刻设备
公开(公告)号：US06262428B1
公开(公告)日：2001-07-17
申请号：US09621577
申请日：2000-07-21
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
摘要翻译：为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过通过其他模板掩模的透射孔，同时用光束偏转装置选择在模板掩模上的孔，传送孔被连续地用于掩模传送方向，模板掩模在与梁一起传播的同时移动，而其它模板掩模当指定的模板掩模孔组被曝光时执行传送。重复这些操作，以便执行所有曝光处理。

9. 发明授权

US07947964B2 Charged particle beam orbit corrector and charged particle beam apparatus 有权
标题翻译：带电粒子束轨道校正器和带电粒子束装置
公开(公告)号：US07947964B2
公开(公告)日：2011-05-24
申请号：US11943241
申请日：2007-11-20
申请人： Hiroyuki Ito , Yuko Sasaki , Tohru Ishitani , Yoshinori Nakayama
发明人： Hiroyuki Ito , Yuko Sasaki , Tohru Ishitani , Yoshinori Nakayama
IPC分类号： G21K1/087
CPC分类号： H01J37/141 , H01J37/09 , H01J37/12 , H01J37/153 , H01J37/28 , H01J2237/142 , H01J2237/1534 , H01J2237/303
摘要： The present invention relates to an orbit correction method for a charged particle beam, and aims to solve problems inherent in conventional aberration correction systems and to provide a low-cost, high-precision, high-resolution optical converging system for a charged particle beam. To this end, employed is a configuration in which a beam orbit is limited in ring zone form to form a distribution of electromagnetic field converging toward the center of a beam orbit axis. Consequently, a nonlinear action outwardly augmented, typified by spherical aberration of an electron lens, can be cancelled out. Specifically, this effect can be achieved by an electron disposed on the axis and subjected to a voltage to facilitate the occurrence of electrostatic focusing. For a magnetic field, this effect can be achieved by forming a coil radially distributed-wound on a surface equiangularly divided in the direction of rotation to control convergence of a magnetic flux density.
摘要翻译：本发明涉及一种用于带电粒子束的轨道校正方法，其目的在于解决常规像差校正系统中固有的问题，并提供一种用于带电粒子束的低成本，高精度，高分辨率的聚光系统。为此，所采用的是波束轨道受环形形式限制以形成朝向光束轨道中心收敛的电磁场分布的结构。因此，可以抵消以电子透镜的球面像差为代表的向外扩大的非线性动作。具体地说，这种效果可以通过设置在轴上的电子元件实现，并且经受电压以便于静电聚焦的发生。对于磁场，这种效果可以通过在旋转方向上等角地分割的表面上形成径向分布缠绕的线圈来实现，以控制磁通密度的收敛。

10. 发明申请

US20080116391A1 Charged Particle Beam Orbit Corrector and Charged Particle Beam Apparatus 有权
标题翻译：带电粒子束轨道校正器和带电粒子束装置
公开(公告)号：US20080116391A1
公开(公告)日：2008-05-22
申请号：US11943241
申请日：2007-11-20
申请人： Hiroyuki Ito , Yuko Sasaki , Tohru Ishitani , Yoshinori Nakayama
发明人： Hiroyuki Ito , Yuko Sasaki , Tohru Ishitani , Yoshinori Nakayama
IPC分类号： G21K1/087 , G21K1/093
CPC分类号： H01J37/141 , H01J37/09 , H01J37/12 , H01J37/153 , H01J37/28 , H01J2237/142 , H01J2237/1534 , H01J2237/303
摘要： The present invention relates to an orbit correction method for a charged particle beam, and aims to solve problems inherent in conventional aberration correction systems and to provide a low-cost, high-precision, high-resolution optical converging system for a charged particle beam. To this end, employed is a configuration in which a beam orbit is limited in ring zone form to form a distribution of electromagnetic field converging toward the center of a beam orbit axis. Consequently, a nonlinear action outwardly augmented, typified by spherical aberration of an electron lens, can be cancelled out. Specifically, this effect can be achieved by an electron disposed on the axis and subjected to a voltage to facilitate the occurrence of electrostatic focusing. For a magnetic field, this effect can be achieved by forming a coil radially distributed-wound on a surface equiangularly divided in the direction of rotation to control convergence of a magnetic flux density.
摘要翻译：本发明涉及一种用于带电粒子束的轨道校正方法，其目的在于解决常规像差校正系统中固有的问题，并提供一种用于带电粒子束的低成本，高精度，高分辨率的聚光系统。为此，所采用的是波束轨道受环形形式限制以形成朝向光束轨道中心收敛的电磁场分布的结构。因此，可以抵消以电子透镜的球面像差为代表的向外扩大的非线性动作。具体地说，这种效果可以通过设置在轴上的电子元件实现，并且经受电压以便于静电聚焦的发生。对于磁场，这种效果可以通过在旋转方向上等角地分割的表面上形成径向分布缠绕的线圈来实现，以控制磁通密度的收敛。

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