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    • 33. 发明申请
    • OPTICAL SYSTEM, IN PARTICULAR ILLUMINATION DEVICE OR PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 光学系统,特别是照明设备或投影微波投影曝光装置的目标
    • WO2008119794A1
    • 2008-10-09
    • PCT/EP2008/053847
    • 2008-03-31
    • CARL ZEISS SMT AGTOTZECK, MichaelGRUNER, ToralfFIOLKA, Damian
    • TOTZECK, MichaelGRUNER, ToralfFIOLKA, Damian
    • G03F7/20
    • G03F7/70566
    • The invention relates to an optical system, in particular an illumination device or a projection objective of a microlithographic projection exposure apparatus, comprising a polarization compensator (100, 200, 300, 400, 800, 900), which has at least one polarization-modifying partial element (110-140, 210-240, 310-340, 410-440, 810-840, 910-940), and a manipulator (150, 250, 722, 851-854, 951a-954a, 951b-954b), by means of which the position of the at least one partial element can be altered, wherein, in the optical system, at least one operating mode (501-504) can be set in which the intensity, over a region which belongs to a plane perpendicular to the optical axis (OA) and which can be illuminated with light from said light source, does not exceed 20% of the maximum intensity in said plane, and wherein the manipulator (150, 250, 722, 851-854, 951a-954a, 951b-954b) is arranged in said region.
    • 本发明涉及光学系统,特别是微光刻投影曝光装置的照明装置或投影物镜,该光学装置或投影物镜包括极化补偿器(100,200,300,400,800,900),其具有至少一个偏振修正 部分元件(110-140,210-240,310-340,410-440,810-840,910-940)和操纵器(150,250,722,851-854,951a-954a,951b-954b) ,借助于此可以改变至少一个部分元件的位置,其中在光学系统中,可以设置至少一个操作模式(501-504),其中强度在属于 垂直于光轴(OA)的并且可以用来自所述光源的光照射的平面不超过所述平面中最大强度的20%,并且其中所述操纵器(150,250,722,851-854,951a -954a,951b-954b)布置在所述区域中。
    • 37. 发明申请
    • ATTENUATION FILTER FOR PROJECTION LENS, PROJECTION LENS HAVING ATTENUATION FILTER FOR PROJECTION EXPOSURE APPARATUS, AND PROJECTION EXPOSURE APPARATUS HAVING PROJECTION LENS
    • 用于投影透镜的衰减滤光器,具有用于投影曝光装置的衰减滤光器的投影透镜以及具有投射透镜的投影曝光装置
    • WO2017174366A1
    • 2017-10-12
    • PCT/EP2017/056909
    • 2017-03-23
    • CARL ZEISS SMT GMBH
    • GRUNER, ToralfSCHÖMER, Ricarda
    • G03F7/20G02B27/00
    • An attenuation filter (AF, AF', AF1, AF2, AF3) is configured for the defined attenuation of the intensity of ultraviolet radiation (LR1I, LR2I) with a specified working wavelength from a wave-length range of 150 nm to 370 nm according to a specifiable local distribution in a projection lens (PO, PO') of a microlithographic projection exposure apparatus (WSC). The attenuation filter has a substrate (SU, SU') and an absorption layer (AL). The substrate is sufficiently transparent at the working wavelength. The absorption layer is arranged on the substrate and absorbs incident ultraviolet radiation of the working wavelength according to the specifiable local distribution at different locations (Z1, Z2) of a used area (UA) to varying degrees. The attenuation filter is designed for reducing or avoiding a thermally induced wavefront variation error in the ultraviolet radiation (LR1O, LR2O) which has passed through the attenuation filter owing to locally varying heating of the substrate, which is caused by the absorption of the ultraviolet radiation that varies locally over the substrate. A thickness (TS) of the substrate (SU) is less than 100 µm.
    • 衰减滤波器(AF,AF',AF1,AF2,AF3)被配置用于从波长中规定的工作波长的紫外线辐射强度(LR1I,LR2I) 根据微光刻投影曝光设备(WSC)的投影透镜(PO,PO')中的可指定的局部分布,在150nm至370nm的范围内。 衰减滤波器具有衬底(SU,SU')和吸收层(AL)。 衬底在工作波长处足够透明。 吸收层设置在基板上,并根据使用区域(UA)的不同位置(Z1,Z2)处的可指定的局部分布不同程度地吸收工作波长的入射紫外线辐射。 衰减滤波器被设计用于减少或避免由于紫外辐射的吸收而引起的衬底的局部变化的加热,已经通过衰减滤波器的紫外辐射(LR1O,LR2O)中的热引起的波前变化误差 在衬底上局部变化。 衬底(SU)的厚度(TS)小于100微米
    • 39. 发明申请
    • ILLUMINATION INTENSITY CORRECTION DEVICE FOR PREDEFINING AN ILLUMINATION INTENSITY OVER AN ILLUMINATION FIELD OF A LITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 用于在照明下预测照明强度的照明强度校正装置光刻投影曝光装置
    • WO2013152951A1
    • 2013-10-17
    • PCT/EP2013/056456
    • 2013-03-27
    • CARL ZEISS SMT GMBH
    • ENDRES, MartinGRUNER, Toralf
    • G03F7/20
    • G03F7/70191G03F7/70066G03F7/70083G03F7/70091G03F7/70141G03F7/7015
    • An illumination intensity correction device (24) serves for predefining an illumination intensity over an illumination field (18) of a lithographic projection exposure apparatus. The correction device (24) has a plurality of bar-shaped individual stops (27) arranged alongside one another and having bar axes (28) arranged parallel to one another, which are arranged in a manner lined up alongside one another transversely with respect to the bar axes. The individual stops (27) are displaceable into a predefined intensity correction displacement position at least along their respective bar axis (28) with the aid of a displacement drive (29) individually for the purpose of predefining an intensity correction of an illumination of the illumination field (18). At least some of the individual stops (27 FB ) are embodied as field delimiting individual stops such that they are displaceable along their bar axis (28) between a completely extended extension position and a completely retracted retraction position by more than a field extent (18 y ) of the illumination field (18) which the latter has along the bar axis (28). This results in an illumination intensity correction device having an improved correction accuracy in comparison with the prior art.
    • 照明强度校正装置(24)用于预定光刻投影曝光装置的照明场(18)上的照明强度。 校正装置(24)具有彼此并排设置的多个条形单独的止挡件(27),并且具有彼此平行布置的杆轴线(28),它们以相对于 杆轴。 至少借助于位移驱动器(29),各个停止件(27)可以至少沿其相应的杆轴线(28)移动到预定的强度校正位移位置中,以便预先定义照明的照明的强度校正 字段(18)。 各个止动件(27FB)中的至少一些被实施为场限定各个止挡件,使得它们可以沿着它们的杆轴线(28)在完全延伸的延伸位置和完全缩回的缩回位置之间移位多于一个场范围(18y) 的照明场(18),后者沿着杆轴线(28)。 这导致与现有技术相比具有改进的校正精度的照明强度校正装置。
    • 40. 发明申请
    • PROJECTION EXPOSURE APPARATUS COMPRISING A MEASURING SYSTEM FOR MEASURING AN OPTICAL ELEMENT
    • 包含用于测量光学元件的测量系统的投影曝光装置
    • WO2013113480A1
    • 2013-08-08
    • PCT/EP2013/000200
    • 2013-01-23
    • CARL ZEISS SMT GMBH
    • BLEIDISTEL, SaschaHARTJES, JoachimGRUNER, Toralf
    • G02B27/00G01N21/41G03F7/20
    • G03F7/706G01K11/00G01M11/0242G01M11/0271G03F7/70141G03F7/70258G03F7/7085G03F7/70891
    • A projection exposure apparatus (10) for microlithography comprises a measuring system (50) for measuring an optical element of the projection exposure apparatus. The measuring system (50) comprises: an irradiation device (54), which is configured to radiate measuring radiation (62) in different directions (64) onto the optical element (20), such that the measuring radiation (62) covers a respective optical path length (68) within the optical element (20) for the different directions (64) of incidence, a detection device (56), which is configured to measure, for the respective direction (64) of incidence, the corresponding optical path length covered by the measuring radiation (62) in the optical element (20), and an evaluation device, which is configured to determine a spatially resolved distribution of the refractive index in the optical element (20) by computed-tomographic back projection of the measured path lengths taking account of the respective direction of incidence.
    • 用于微光刻的投影曝光装置(10)包括用于测量投影曝光装置的光学元件的测量系统(50)。 测量系统(50)包括:照射装置(54),其配置成将不同方向(64)上的测量辐射(62)辐射到光学元件(20)上,使得测量辐射(62)覆盖相应的 用于不同方向(64)入射的光学元件(20)内的光路长度(68);检测装置(56),被配置为针对相应的入射方向(64)测量相应的光路 由所述光学元件(20)中的所述测量辐射(62)覆盖的长度以及评估装置,其被配置为通过所述光学元件(20)的计算机断层摄影反投影来确定所述光学元件(20)中的折射率的空间分辨分布 测量的路径长度考虑到相应的入射方向。