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1. 发明申请

WO2011073441A2 REFLECTIVE MASK FOR EUV LITHOGRAPHY 审中-公开
标题翻译：反射掩码的EUV LITHOGRAPHY
公开(公告)号：WO2011073441A2
公开(公告)日：2011-06-23
申请号：PCT/EP2010/070171
申请日：2010-12-17
申请人： CARL ZEISS SMT GMBH , KAMENOV, Vladimir , MIGURA, Sascha
发明人： KAMENOV, Vladimir , MIGURA, Sascha
IPC分类号： G03F1/14
CPC分类号： G03F7/70316 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70216
摘要： To improve the mask of an EUV lithography apparatus in view of its high reflectivity, a reflective mask is suggested for EUV lithography, comprising a reflective multilayer system on a substrate configured for a working wavelength in the EUV range and having stacks with layers of at least two materials with different real parts of the refractive index at the working wavelength, wherein the multilayer system (V) is configured in such a manner that, as it is irradiated with EUV radiation at a fixed wavelength and an angle interval between the smallest and the largest angle of incidence of up to 21°, the apodization is less than 30%.
摘要翻译：鉴于其高反射率，为了改进EUV光刻设备的掩模，建议用于EUV光刻的反射掩模，其包括在衬底上的反射多层系统，其被配置为在EUV范围内的工作波长并且具有至少层在工作波长处具有不同实际折射率部分的两种材料，其中所述多层系统（V）被配置成使得当被固定波长的EUV辐射和最小和最小的角度间隔照射时，最大发生角度高达21°，蜕变率小于30％。

2. 发明申请

WO2015007298A1 MICROLITHOGRAPHIC APPARATUS AND METHOD OF VARYING A LIGHT IRRADIANCE DISTRIBUTION 审中-公开
标题翻译：微光学设备和改变光线辐射分布的方法
公开(公告)号：WO2015007298A1
公开(公告)日：2015-01-22
申请号：PCT/EP2013/002114
申请日：2013-07-17
申请人： CARL ZEISS SMT GMBH
发明人： KAMENOV, Vladimir , GRUNER, Toralf
IPC分类号： G03F7/20 , G02B5/20
CPC分类号： G03F7/70308 , G02B5/1838 , G02B5/208 , G03F7/70091 , G03F7/70258 , G03F7/70316
摘要： A microlithographic apparatus comprises a light source producing projection light having a center wavelength λ and a projection objective having an optical axis and a transmission filter system. The latter comprises a first and a second diffractive optical element (44, 46). A drive (48) is configured to change the relative position between the first and the second diffractive optical element between an active position, in which the combination of the two diffractive optical elements diffracts more projection light on a light absorbing element than in a neutral position. The axial distance Δz between the two diffractive optical elements (44, 46) fulfils the condition 0 ≤Δz ≤ 3λ.
摘要翻译：微光刻设备包括产生具有中心波长λ的投影光的光源和具有光轴的投影物镜和透射滤光镜系统。后者包括第一和第二衍射光学元件（44,46）。驱动器（48）构造成在第一和第二衍射光学元件之间的相对位置之间改变，其中两个衍射光学元件的组合将光吸收元件上的更多的投影光衍射到在中性位置。两个衍射光学元件（44,46）之间的轴向距离＆Dgr; z满足条件0≤＆Dgr;z≤3λ。

3. 发明申请

WO2014206736A1 SURFACE CORRECTION OF MIRRORS WITH DECOUPLING COATING 审中-公开
标题翻译：倒装涂层反光镜的表面校正
公开(公告)号：WO2014206736A1
公开(公告)日：2014-12-31
申请号：PCT/EP2014/062132
申请日：2014-06-11
申请人： CARL ZEISS SMT GMBH
发明人： DIER, Oliver , HACKL, Tobias , STICKEL, Franz-Josef , LÖRING, Ulrich , AßMUS, Tilmann , MÜLLER, Jürgen , KAMENOV, Vladimir , RENNON, Siegfried
IPC分类号： G02B5/08 , G21K1/06
CPC分类号： G03F7/702 , G02B5/0816 , G02B5/0891 , G02B27/0025 , G03F7/70308 , G03F7/70316 , G03F7/706 , G03F7/70975 , G21K1/062 , H05G2/005
摘要： The invention relates to a mirror (1) for EUV lithography, comprising a substrate (2) and a reflective coating (3, 4), wherein the reflective coating comprises a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group (3) and second group (4) of layers (3a, 3b; 4a, 4b) are designed in each case for reflecting radiation having a used wavelength in the range of between 5 nm and 30 nm, wherein the first group (3) of layers (3a, 3b) is arranged between the substrate (2) and the second group (4) of layers (4a, 4b), and wherein a decoupling coating (6) is arranged between the first group (3) and second group (4) of layers (3a, 3b, 4a, 4b), said decoupling coating being designed for optically decoupling the second group (4) of layers (4a, 4b) from the first group (3) of layers (3a, 3b) by preventing the radiation having the used wavelength from reaching the first group (3) of layers (3a, 3b). The reflective coating (3, 4) preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror (1). The invention also relates to a projection optical unit and an optical system for EUV lithography comprising at least one such mirror, a method for correcting the surface form of such a mirror, and methods for correcting the imaging properties of such a projection optical unit.
摘要翻译：本发明涉及一种用于EUV光刻的反射镜（1），其包括基底（2）和反射涂层（3,4），其中所述反射涂层包括第一组（3）层（3a，3b）组（4）层（4a，4b），其中在每种情况下设计层（3a，3b; 4a，4b）的第一组（3）和第二组（4），用于将具有使用波长的辐射反射在范围在5nm和30nm之间，其中层（3a，3b）的第一组（3）布置在基板（2）和层（4a，4b）的第二组（4）之间，并且其中去耦涂层（6）布置在层（3a，3b，4a，4b）的第一组（3）和第二组（4）之间，所述去耦涂层被设计用于光学地将第二组（4）的层（4a， 4b）从层（3a，3b）的第一组（3）通过防止具有使用波长的辐射到达层（3a，3b）的第一组（3）。反射涂层（3,4）优选具有用于校正反射镜（1）的表面形状的层厚度变化的校正层（5）。本发明还涉及用于EUV光刻的投影光学单元和光学系统，其包括至少一个这种反射镜，用于校正这种反射镜的表面形状的方法以及用于校正这种投影光学单元的成像特性的方法。

4. 发明公开

EP2513721A2 REFLECTIVE MASK FOR EUV LITHOGRAPHY 有权
标题翻译： REFLEXIONSMASKEFÜREUV-LITHOGRAFIE
公开(公告)号：EP2513721A2
公开(公告)日：2012-10-24
申请号：EP10790791.7
申请日：2010-12-17
申请人： Carl Zeiss SMT GmbH
发明人： KAMENOV, Vladimir , MIGURA, Sascha
IPC分类号： G03F1/14 , G03F7/20
CPC分类号： G03F7/70316 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70216
摘要： To improve the mask of an EUV lithography apparatus in view of its high reflectivity, a reflective mask is suggested for EUV lithography, comprising a reflective multilayer system on a substrate configured for a working wavelength in the EUV range and having stacks with layers of at least two materials with different real parts of the refractive index at the working wavelength, wherein the multilayer system (V) is configured in such a manner that, as it is irradiated with EUV radiation at a fixed wavelength and an angle interval between the smallest and the largest angle of incidence of up to 21°, the apodization is less than 30%.
摘要翻译：鉴于其高反射率，为了改进EUV光刻设备的掩模，建议用于EUV光刻的反射掩模，其在被配置为在EUV范围内的工作波长的衬底上具有反射多层系统，并且具有至少两层的层在工作波长处具有不同实际折射率部分的材料，其中多层系统（V）被配置为使得其被固定波长的EUV辐射和最小和最大入射角之间的角度间隔照射高达21°，变迹小于30％。

5. 发明授权

EP3014316B1 SURFACE CORRECTION OF MIRRORS WITH DECOUPLING COATING 有权
公开(公告)号：EP3014316B1
公开(公告)日：2019-11-13
申请号：EP14729020.9
申请日：2014-06-11
申请人： Carl Zeiss SMT GmbH
发明人： DIER, Oliver , HACKL, Tobias , STICKEL, Franz-Josef , LÖRING, Ulrich , AßMUS, Tilmann , MÜLLER, Jürgen , KAMENOV, Vladimir , RENNON, Siegfried
IPC分类号： G02B5/08 , G21K1/06

6. 发明公开

EP3014316A1 SURFACE CORRECTION OF MIRRORS WITH DECOUPLING COATING 有权
标题翻译：去耦涂层反射镜表面校正
公开(公告)号：EP3014316A1
公开(公告)日：2016-05-04
申请号：EP14729020.9
申请日：2014-06-11
申请人： Carl Zeiss SMT GmbH
发明人： DIER, Oliver , HACKL, Tobias , STICKEL, Franz-Josef , LÖRING, Ulrich , AßMUS, Tilmann , MÜLLER, Jürgen , KAMENOV, Vladimir , RENNON, Siegfried
IPC分类号： G02B5/08 , G21K1/06
摘要： A mirror (1) for EUV lithography includes a substrate (2) and a reflective coating (3, 4). The reflective coating has a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group and second group of layers (3a, 3b; 4a, 4b) reflect radiation having a used wavelength between 5 nm and 30 nm. The first group of layers is arranged between the substrate and the second group of layers, and a decoupling coating (6) is arranged between the first group and second group of layers, said decoupling coating optically decoupling the second group of layers from the first group of layers by preventing the radiation having the used wavelength from reaching the first group of layers. The reflective coating preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror.

7. 发明授权

EP1886190B1 MICROLITHOGRAPHY PROJECTION OBJECTIVE 失效转让
标题翻译：微光刻投影镜头
公开(公告)号：EP1886190B1
公开(公告)日：2012-10-03
申请号：EP06753801.7
申请日：2006-05-23
申请人： Carl Zeiss SMT GmbH
发明人： KALLER, Julian , DODOC, Aurelian , FELDMANN, Heiko , KAMENOV, Vladimir , EPPLE, Alexander , GRUNER, Toralf , KRAEHMER, Daniel , PERRIN, Jean-Claude , CONRADI, Olaf , OKON, Thomas
IPC分类号： G03F7/20
CPC分类号： G03F7/70225 , G02B17/08 , G03F7/702 , G03F7/70283 , G03F7/70941

8. 发明授权

EP2513721B1 REFLECTIVE MASK FOR EUV LITHOGRAPHY 有权
标题翻译： EUV光刻的反射式掩膜
公开(公告)号：EP2513721B1
公开(公告)日：2017-09-27
申请号：EP10790791.7
申请日：2010-12-17
申请人： Carl Zeiss SMT GmbH
发明人： KAMENOV, Vladimir , MIGURA, Sascha
IPC分类号： G03F7/20 , G03F1/24 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/70316 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70216

9. 发明授权

EP2165241B1 Method of adapting the stray light of a projection objective for microlithography 失效转让
标题翻译：一种用于散射光用于微光刻的投射物镜的调整过程
公开(公告)号：EP2165241B1
公开(公告)日：2013-02-27
申请号：EP08784500.4
申请日：2008-05-21
申请人： Carl Zeiss SMT GmbH
发明人： KRAEHMER, Daniel , KAMENOV, Vladimir , TOTZECK, Michael , GOEHNERMEIER, Aksel
IPC分类号： G03F7/20
CPC分类号： G03F7/70958 , G03F7/70308 , G03F7/70341 , G03F7/70591 , G03F7/70941

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