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21. 发明授权

US07660242B2 Call admission control system and method for interpreting signaling messages and controlling traffic load in internet protocol differentiated services networks 失效
标题翻译：呼叫接纳控制系统和方法，用于解释信令消息并控制互联网协议差分服务网络中的流量负载
公开(公告)号：US07660242B2
公开(公告)日：2010-02-09
申请号：US10595092
申请日：2004-07-27
申请人： Gergely Matefi , Csaba Antal , Janos Farkas
发明人： Gergely Matefi , Csaba Antal , Janos Farkas
IPC分类号： G08C15/00
CPC分类号： H04L47/10 , H04L47/14 , H04L47/15 , H04L47/2408 , H04L47/2416 , H04L47/283 , H04L47/70 , H04L47/801 , H04L47/805 , H04L47/822 , H04L47/824
摘要： A call admission control system and method for Internet Protocol (IP) Differentiated Services (DiffServ) network having at least one node for interpreting signaling messages and controlling traffic load in the network. The method consists of an initialization (601) and a real-time phase (602). In initialization phase (601), coefficients of the approximating hyperplanes are computed (61) and stored (62). This phase is repeated when the descriptor of a traffic class changes (63), which usually happens when nodes are configured or reconfigured. A traffic mix is admissible (67), if for each real-time traffic class both the stability (65) and the delay (66) constraints are fulfilled. Stability is tested by evaluating the number of lost packets and comparing it to the tolerated packet loss ratio for each class in that queue. Delay constraint is tested by checking if the traffic mix is below at least one of the approximating hyperplanes in the space of number of sessions for each class.
摘要翻译：一种用于互联网协议（IP）差分服务（DiffServ）网络的呼叫接纳控制系统和方法，其具有用于解释信令消息和控制网络中的业务负载的至少一个节点。该方法由初始化（601）和实时阶段（602）组成。在初始化阶段（601）中，计算（61）并存储（62）近似超平面的系数。当业务类的描述符改变（63）时，会重复此阶段，通常在配置或重新配置节点时发生。如果对于每个实时交通类来说，流量混合是可接受的（67），则稳定性（65）和延迟（66）约束都得到满足。通过评估丢失数据包的数量并将其与该队列中的每个类别的容忍丢包率进行比较来测试稳定性。通过检查流量混合是否低于每个类的会话空间中的近似超平面中的至少一个来测试延迟约束。

22. 发明申请

US20080316917A1 Method of Generating Spanning Trees 有权
标题翻译：生成生成树的方法
公开(公告)号：US20080316917A1
公开(公告)日：2008-12-25
申请号：US12089228
申请日：2005-10-11
申请人： Janos Farkas , Toth Gabor
发明人： Janos Farkas , Toth Gabor
IPC分类号： G06F11/00
CPC分类号： H04L12/4625 , H04L45/02 , H04L45/22 , H04L45/28 , H04L45/48
摘要： A method of generating spanning trees in a network in which a plurality of network nodes are interconnected by links. The spanning trees are utilized for handling link and node failures. For link failures, each link has at least one tree that does not include that link. For node failures, each node has at least one tree to which the node is connected by a single link. A first spanning tree connects all of the nodes, and from each node one link is left unconnected. A second spanning tree includes all of the nodes and all of the unconnected links. Thus, none of the links is included in both trees. If a node failure prevents other nodes from communicating, a third spanning tree is needed. The method minimizes the number of required trees in large networks of any topology and can be implemented off-line.
摘要翻译：一种在网络中生成生成树的方法，其中多个网络节点通过链路互连。生成树用于处理链路和节点故障。对于链路故障，每个链路至少有一个不包含该链路的树。对于节点故障，每个节点至少有一个树，节点通过单个链路连接到该树。第一个生成树连接所有节点，从每个节点，一个链路保持不连接。第二个生成树包括所有节点和所有未连接的链路。因此，这两个树都不包括链接。如果节点故障阻止其他节点通信，则需要第三个生成树。该方法将任何拓扑的大型网络中所需的树数量最小化，可以离线实现。

23. 发明申请

US20080282778A1 Method For Testing a Slurry Used to Form a Semiconductor Device 有权
标题翻译：用于测试用于形成半导体器件的浆料的方法
公开(公告)号：US20080282778A1
公开(公告)日：2008-11-20
申请号：US12091693
申请日：2005-10-25
申请人： Philippe Monnoyer , Janos Farkas , Farid Sebaai
发明人： Philippe Monnoyer , Janos Farkas , Farid Sebaai
IPC分类号： G01N11/00
CPC分类号： C09G1/02 , G01N15/04 , G01N29/032 , G01N2291/02416
摘要： A method for forming a semiconductor device, the method includes providing a semiconductor substrate, applying a slurry to the semiconductor substrate, wherein the slurry was tested using a testing method includes taking a first undiluted sample from a top of the slurry; determining a first particle size distribution characteristic of the first undiluted sample; taking a second undiluted sample from a bottom of the slurry; determining a second particle size distribution characteristic of the second undiluted sample; and comparing a difference between the first particle size distribution characteristic and the second particle size distribution characteristics with a first predetermined value.
摘要翻译：一种形成半导体器件的方法，所述方法包括提供半导体衬底，向半导体衬底施加浆料，其中使用测试方法测试所述浆料，包括从所述浆料的顶部取出第一未稀释的样品; 确定第一未稀释样品的第一粒度分布特性; 从浆料的底部取出第二个未稀释的样品; 确定第二未稀释样品的第二粒度分布特征; 以及将第一粒度分布特性和第二粒度分布特性之间的差与第一预定值进行比较。

24. 发明申请

US20080194116A1 Treatment Solution and Method of Applying a Passivating Layer 有权
标题翻译：处理方法及应用钝化层的方法
公开(公告)号：US20080194116A1
公开(公告)日：2008-08-14
申请号：US11914878
申请日：2005-05-25
申请人： Janos Farkas , Sebastien Petitdidier
发明人： Janos Farkas , Sebastien Petitdidier
IPC分类号： H01L21/47
CPC分类号： H01L21/3212 , C11D11/0047 , H01L21/02052 , H01L21/67034 , Y10S438/906
摘要： A treatment solution for a semiconductor wafer comprising water, a passivating reagent and a surfactant. The treatment solution is either mixed with a cleaning fluid, a rinsing fluid or a drying vapour, and is used in a cleaning apparatus employing a Marangoni dryer.
摘要翻译：一种用于包含水，钝化剂和表面活性剂的半导体晶片的处理溶液。处理溶液与清洁液，漂洗液或干燥蒸气混合，并用于采用Marangoni干燥器的清洁装置中。

25. 发明授权

US06204169B1 Processing for polishing dissimilar conductive layers in a semiconductor device 失效
标题翻译：用于在半导体器件中抛光不同导电层的处理
公开(公告)号：US06204169B1
公开(公告)日：2001-03-20
申请号：US08822025
申请日：1997-03-24
申请人： Rajeev Bajaj , Janos Farkas , Sung C. Kim , Jaime Saravia
发明人： Rajeev Bajaj , Janos Farkas , Sung C. Kim , Jaime Saravia
IPC分类号： H01L214763
CPC分类号： H01L21/3212
摘要： A process of polishing two dissimilar conductive materials deposited on semiconductor device substrate optimizes the polishing of each of the conductive material independently, while utilizing the same polishing equipment for manufacturing efficiency. A tungsten layer (258) and a titanium layer (256) of a semiconductor device substrate (250) are polished using one polisher (10) but two different slurry formulations. The two slurries can be dispensed sequentially onto the same polishing platen (132) from two different urce containers (111 and 112), wherein the first slurry is dispensed until e tungsten is removed and then the slurry dispense is switched to second slurry for removal of the titanium. In a preferred embodiment, the first slurry composition is a ferric nitrate slurry while the second slurry composition is an oxalic acid slurry.
摘要翻译：抛光沉积在半导体器件衬底上的两种不同导电材料的工艺可以独立地优化每个导电材料的抛光，同时利用相同的抛光设备来制造效率。使用一个抛光机（10），但是使用两种不同的浆料配方来抛光半导体器件基板（250）的钨层（258）和钛层（256）。两个浆料可以从两个不同的容器（111和112）顺序地分配到相同的抛光平台（132）上，其中分配第一浆料直到除去钨，然后将浆料分配切换到第二浆料以除去钛。在优选的实施方案中，第一浆料组合物是硝酸铁浆料，而第二浆料组合物是草酸浆料。

26. 发明授权

US5935871A Process for forming a semiconductor device 失效
标题翻译：用于形成半导体器件的工艺
公开(公告)号：US5935871A
公开(公告)日：1999-08-10
申请号：US916297
申请日：1997-08-22
申请人： Janos Farkas , David Watts , Melissa Freeman
发明人： Janos Farkas , David Watts , Melissa Freeman
IPC分类号： H01L21/02 , H01L21/321 , H01L21/768 , H01L21/00
CPC分类号： H01L21/3212 , H01L21/02074 , H01L21/7684
摘要： A process has been developed for a post-chemical mechanical polishing cleaning/passivting step to remove slurry particles (52) and form a passivating film (64) from a portion of an interconnect material within a conductive layer (42) without attacking the interconnecting material. In one particular embodiment, a solution having a pH greater than the isoelectric point of alumina particles is exposed to the surface of an interconnect material of a conductive layer (42) to passivate a portion of the interconnect material while changing the charge of the slurry particles (52) such that they are repelled away from the surface of the substrate and removed by the cleaning solution, or other cleaning processes.
摘要翻译：已经开发了用于后化学机械抛光清洗/钝化步骤以从导电层（42）内的互连材料的一部分去除浆料颗粒（52）并形成钝化膜（64）的方法，而不侵害互连材料。在一个具体实施方案中，将具有大于氧化铝颗粒的等电点的pH的溶液暴露于导电层（42）的互连材料的表面，以钝化一部分互连材料，同时改变浆料颗粒的电荷（52），使得它们被排出离开基板的表面并被清洁溶液或其它清洁过程除去。

27. 发明授权

US5897375A Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture 失效
标题翻译：用于铜的化学机械抛光（CMP）浆料和集成电路制造中的使用方法
公开(公告)号：US5897375A
公开(公告)日：1999-04-27
申请号：US954190
申请日：1997-10-20
申请人： David Watts , Rajeev Bajaj , Sanjit Das , Janos Farkas , Chelsea Dang , Melissa Freeman , Jaime A. Saravia , Jason Gomez , Lance B. Cook
发明人： David Watts , Rajeev Bajaj , Sanjit Das , Janos Farkas , Chelsea Dang , Melissa Freeman , Jaime A. Saravia , Jason Gomez , Lance B. Cook
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , B24B1/00
CPC分类号： C23F3/00 , C09G1/02 , C09K3/1463 , C09K3/1472
摘要： A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.
摘要翻译：通过形成铜层（22）开始化学机械抛光（CMP）铜层（22）的方法。然后将铜层（22）暴露于浆料（24）。浆料（24）含有氧化剂如H 2 O 2，羧酸盐如柠檬酸铵，研磨浆如校准研磨剂，任选的三唑或三唑衍生物，剩余的溶剂如去离子水。浆料（24）的使用以高的去除速度抛光铜层（22），从而降低了铜层（22）的点蚀和腐蚀，并实现了良好的铜互连平面性。这种浆料（24）具有铜对氧化物的良好选择性，并且导致具有良好电性能的铜器件。此外，浆料（24）的处理不是环境困难的，因为与其它现有技术的浆料相比，浆料（24）是无害环境的。

28. 发明授权

US5614444A Method of using additives with silica-based slurries to enhance selectivity in metal CMP 失效
标题翻译：使用添加剂与二氧化硅基浆料以提高金属CMP中的选择性的方法
公开(公告)号：US5614444A
公开(公告)日：1997-03-25
申请号：US469164
申请日：1995-06-06
申请人： Janos Farkas , Rahul Jairath , Matt Stell , Sing-Mo Tzeng
发明人： Janos Farkas , Rahul Jairath , Matt Stell , Sing-Mo Tzeng
IPC分类号： H01L21/3105 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/3105 , H01L21/3213
摘要： A method of using additives with silica-based slurries to enhance metal selectivity in polishing metallic materials utilizing a chemical-mechanical polishing (CMP) process. Additives are used with silica-based slurries to passivate a dielectric surface, such as a silicon dioxide (SiO.sub.2) surface, of a semiconductor wafer so that dielectric removal rate is reduced when CMP is applied. The additive is comprised of at least a polar component and an apolar component. The additive interacts with the surface silanol group of the SiO.sub.2 surface to inhibit particles of the silica-based slurry from interacting with hydroxyl molecules of the surface silanol group. By applying a surface passivation layer on the SiO.sub.2 surface, erosion of the SiO.sub.2 surface is reduced. However, the metallic surface is not influenced significantly by the additive, so that the selectivity of metal removal over oxide removal is enhanced.
摘要翻译：使用具有二氧化硅基浆料的添加剂的方法，以通过化学机械抛光（CMP）工艺来提高金属材料抛光的金属选择性。添加剂与二氧化硅基浆料一起使用以钝化半导体晶片的电介质表面，例如二氧化硅（SiO 2）表面，使得当施加CMP时电介质去除速率降低。添加剂由至少极性组分和非极性组分组成。该添加剂与SiO 2表面的表面硅烷醇基团相互作用，以抑制二氧化硅基浆料的颗粒与表面硅烷醇基团的羟基分子相互作用。通过在SiO 2表面上施加表面钝化层，降低了SiO 2表面的侵蚀。然而，金属表面不会被添加剂显着影响，从而提高了金属去除对氧化物去除的选择性。

29. 发明授权

US5478435A Point of use slurry dispensing system 失效
标题翻译：使用点浆料分配系统
公开(公告)号：US5478435A
公开(公告)日：1995-12-26
申请号：US356987
申请日：1994-12-16
申请人： James J. Murphy , Janos Farkas , Lucia C. Markert , Rahul Jairath
发明人： James J. Murphy , Janos Farkas , Lucia C. Markert , Rahul Jairath
IPC分类号： B01F3/12 , B01F5/04 , H01L21/00
CPC分类号： H01L21/6715 , B01F5/0403 , B01F2003/1257 , B01F2215/0045
摘要： A point of use slurry dispensing system with controls for dilution, temperature and oxidizer/etchant/additive infusion. A slurry in unmixed form and a diluting agent are independently pumped to a pad on a CMP tool. Liquid heaters are used to heat the slurry and the diluting agent to a desirable temperature. The actual mixing occurs at the point of use on the pad or in a dispensing line just prior to the point of use. In some instances a third independent distribution line is used to dispense an oxidizer, etchant and/or chemical additive at or near the point of use.
摘要翻译：一种使用的浆料分配系统，其具有用于稀释，温度和氧化剂/蚀刻剂/添加剂输注的对照。将未混合的浆料和稀释剂独立地泵送到CMP工具上的垫上。液体加热器用于将浆料和稀释剂加热至所需温度。在使用点之前，实际的混合发生在垫上或使用点处。在一些情况下，使用第三独立分配线来在使用点处或附近分配氧化剂，蚀刻剂和/或化学添加剂。

30. 发明授权

US08061185B2 Method for testing a slurry used to form a semiconductor device 有权
标题翻译：用于测试用于形成半导体器件的浆料的方法
公开(公告)号：US08061185B2
公开(公告)日：2011-11-22
申请号：US12091693
申请日：2005-10-25
申请人： Philippe Monnoyer , Janos Farkas , Farid Sebaai
发明人： Philippe Monnoyer , Janos Farkas , Farid Sebaai
IPC分类号： G01N29/04 , G01N29/28
CPC分类号： C09G1/02 , G01N15/04 , G01N29/032 , G01N2291/02416
摘要： A method for forming a semiconductor device, the method includes providing a semiconductor substrate, applying a slurry to the semiconductor substrate, wherein the slurry was tested using a testing method includes taking a first undiluted sample from a top of the slurry; determining a first particle size distribution characteristic of the first undiluted sample; taking a second undiluted sample from a bottom of the slurry; determining a second particle size distribution characteristic of the second undiluted sample; and comparing a difference between the first particle size distribution characteristic and the second particle size distribution characteristics with a first predetermined value.
摘要翻译：一种形成半导体器件的方法，所述方法包括提供半导体衬底，向半导体衬底施加浆料，其中使用测试方法测试所述浆料，包括从所述浆料的顶部取出第一未稀释的样品; 确定第一未稀释样品的第一粒度分布特性; 从浆料的底部取出第二个未稀释的样品; 确定第二未稀释样品的第二粒度分布特征; 以及将第一粒度分布特性和第二粒度分布特性之间的差与第一预定值进行比较。

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