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1. 发明授权

US5614444A Method of using additives with silica-based slurries to enhance selectivity in metal CMP 失效
标题翻译：使用添加剂与二氧化硅基浆料以提高金属CMP中的选择性的方法
公开(公告)号：US5614444A
公开(公告)日：1997-03-25
申请号：US469164
申请日：1995-06-06
申请人： Janos Farkas , Rahul Jairath , Matt Stell , Sing-Mo Tzeng
发明人： Janos Farkas , Rahul Jairath , Matt Stell , Sing-Mo Tzeng
IPC分类号： H01L21/3105 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/3105 , H01L21/3213
摘要： A method of using additives with silica-based slurries to enhance metal selectivity in polishing metallic materials utilizing a chemical-mechanical polishing (CMP) process. Additives are used with silica-based slurries to passivate a dielectric surface, such as a silicon dioxide (SiO.sub.2) surface, of a semiconductor wafer so that dielectric removal rate is reduced when CMP is applied. The additive is comprised of at least a polar component and an apolar component. The additive interacts with the surface silanol group of the SiO.sub.2 surface to inhibit particles of the silica-based slurry from interacting with hydroxyl molecules of the surface silanol group. By applying a surface passivation layer on the SiO.sub.2 surface, erosion of the SiO.sub.2 surface is reduced. However, the metallic surface is not influenced significantly by the additive, so that the selectivity of metal removal over oxide removal is enhanced.
摘要翻译：使用具有二氧化硅基浆料的添加剂的方法，以通过化学机械抛光（CMP）工艺来提高金属材料抛光的金属选择性。添加剂与二氧化硅基浆料一起使用以钝化半导体晶片的电介质表面，例如二氧化硅（SiO 2）表面，使得当施加CMP时电介质去除速率降低。添加剂由至少极性组分和非极性组分组成。该添加剂与SiO 2表面的表面硅烷醇基团相互作用，以抑制二氧化硅基浆料的颗粒与表面硅烷醇基团的羟基分子相互作用。通过在SiO 2表面上施加表面钝化层，降低了SiO 2表面的侵蚀。然而，金属表面不会被添加剂显着影响，从而提高了金属去除对氧化物去除的选择性。

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