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1. 发明授权

US5614444A Method of using additives with silica-based slurries to enhance selectivity in metal CMP 失效
标题翻译：使用添加剂与二氧化硅基浆料以提高金属CMP中的选择性的方法
公开(公告)号：US5614444A
公开(公告)日：1997-03-25
申请号：US469164
申请日：1995-06-06
申请人： Janos Farkas , Rahul Jairath , Matt Stell , Sing-Mo Tzeng
发明人： Janos Farkas , Rahul Jairath , Matt Stell , Sing-Mo Tzeng
IPC分类号： H01L21/3105 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/3105 , H01L21/3213
摘要： A method of using additives with silica-based slurries to enhance metal selectivity in polishing metallic materials utilizing a chemical-mechanical polishing (CMP) process. Additives are used with silica-based slurries to passivate a dielectric surface, such as a silicon dioxide (SiO.sub.2) surface, of a semiconductor wafer so that dielectric removal rate is reduced when CMP is applied. The additive is comprised of at least a polar component and an apolar component. The additive interacts with the surface silanol group of the SiO.sub.2 surface to inhibit particles of the silica-based slurry from interacting with hydroxyl molecules of the surface silanol group. By applying a surface passivation layer on the SiO.sub.2 surface, erosion of the SiO.sub.2 surface is reduced. However, the metallic surface is not influenced significantly by the additive, so that the selectivity of metal removal over oxide removal is enhanced.
摘要翻译：使用具有二氧化硅基浆料的添加剂的方法，以通过化学机械抛光（CMP）工艺来提高金属材料抛光的金属选择性。添加剂与二氧化硅基浆料一起使用以钝化半导体晶片的电介质表面，例如二氧化硅（SiO 2）表面，使得当施加CMP时电介质去除速率降低。添加剂由至少极性组分和非极性组分组成。该添加剂与SiO 2表面的表面硅烷醇基团相互作用，以抑制二氧化硅基浆料的颗粒与表面硅烷醇基团的羟基分子相互作用。通过在SiO 2表面上施加表面钝化层，降低了SiO 2表面的侵蚀。然而，金属表面不会被添加剂显着影响，从而提高了金属去除对氧化物去除的选择性。

2. 发明授权

US5478435A Point of use slurry dispensing system 失效
标题翻译：使用点浆料分配系统
公开(公告)号：US5478435A
公开(公告)日：1995-12-26
申请号：US356987
申请日：1994-12-16
申请人： James J. Murphy , Janos Farkas , Lucia C. Markert , Rahul Jairath
发明人： James J. Murphy , Janos Farkas , Lucia C. Markert , Rahul Jairath
IPC分类号： B01F3/12 , B01F5/04 , H01L21/00
CPC分类号： H01L21/6715 , B01F5/0403 , B01F2003/1257 , B01F2215/0045
摘要： A point of use slurry dispensing system with controls for dilution, temperature and oxidizer/etchant/additive infusion. A slurry in unmixed form and a diluting agent are independently pumped to a pad on a CMP tool. Liquid heaters are used to heat the slurry and the diluting agent to a desirable temperature. The actual mixing occurs at the point of use on the pad or in a dispensing line just prior to the point of use. In some instances a third independent distribution line is used to dispense an oxidizer, etchant and/or chemical additive at or near the point of use.
摘要翻译：一种使用的浆料分配系统，其具有用于稀释，温度和氧化剂/蚀刻剂/添加剂输注的对照。将未混合的浆料和稀释剂独立地泵送到CMP工具上的垫上。液体加热器用于将浆料和稀释剂加热至所需温度。在使用点之前，实际的混合发生在垫上或使用点处。在一些情况下，使用第三独立分配线来在使用点处或附近分配氧化剂，蚀刻剂和/或化学添加剂。

3. 发明授权

US6146248A Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher 失效
标题翻译：用于原位终点检测和使用线性抛光机优化化学机械抛光工艺的方法和装置
公开(公告)号：US6146248A
公开(公告)日：2000-11-14
申请号：US869655
申请日：1997-05-28
申请人： Rahul Jairath , Jiri Pecen , Saket Chadda , Wilbur C. Krusell , Jerauld J. Cutini , Erik H. Engdahl
发明人： Rahul Jairath , Jiri Pecen , Saket Chadda , Wilbur C. Krusell , Jerauld J. Cutini , Erik H. Engdahl
IPC分类号： B24B21/04 , B24B37/013 , B24B49/04 , B24D7/12 , H01L21/304 , H01L21/66 , B24B1/00
CPC分类号： B24B37/013 , B24B21/04 , B24B49/04 , B24D7/12 , H01L22/26
摘要： A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.
摘要翻译：用于基材的化学机械抛光（CMP）的线性抛光带包括固定到带上的开口和柔性监测窗，以关闭开口并在带中形成监测通道。也可以使用多个监视通道。包括干涉仪的膜厚监视器可以沿着带或者至少部分地设置在由其限制的区域内。监测通道和膜厚度监测器可用于CMP工艺中以确定CMP工艺的终点，确定衬底任何给定周长处的去除率，确定跨衬底表面的平均去除速率，确定跨越衬底表面的去除率变化基板表面，并优化去除速率和均匀性。

4. 发明授权

US06621584B2 Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing 失效
标题翻译：化学机械抛光过程中厚度原位监测的方法和装置
公开(公告)号：US06621584B2
公开(公告)日：2003-09-16
申请号：US09558877
申请日：2000-04-26
申请人： Jiri Pecen , Saket Chadda , Rahul Jairath , Wilbur C. Krusell
发明人： Jiri Pecen , Saket Chadda , Rahul Jairath , Wilbur C. Krusell
IPC分类号： G01B1106
CPC分类号： B24B37/205 , B24B49/04 , G01B11/0683
摘要： An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.
摘要翻译：一种用于使用抛光工具和膜厚度监测器在基板的化学机械抛光（CMP）期间原位监测厚度的装置和方法。工具上有一个开口。该开头包含一个保护在其中的监控窗口，以创建监控通道。膜厚监视器（包括椭圆偏振器，光束轮廓反射计或应力脉冲分析器）通过监测通道观察衬底，以提供由衬底承载的膜的厚度的指示。该信息可用于确定CMP过程的终点，确定衬底任何给定周长处的去除率，确定跨衬底表面的平均去除速率，确定衬底表面上的去除速率变化，以及优化除去速率和均匀性。

5. 发明授权

US06517418B2 Method of transporting a semiconductor wafer in a wafer polishing system 失效
标题翻译：在晶片抛光系统中输送半导体晶片的方法
公开(公告)号：US06517418B2
公开(公告)日：2003-02-11
申请号：US09887950
申请日：2001-06-22
申请人： Erik H. Engdahl , Edward T. Ferri, Jr. , Wilbur C. Krusell , Rahul Jairath
发明人： Erik H. Engdahl , Edward T. Ferri, Jr. , Wilbur C. Krusell , Rahul Jairath
IPC分类号： B24B100
CPC分类号： H01L21/31053 , B24B21/04 , B24B21/10 , B24B37/04 , B24B37/345 , B24B41/005
摘要： A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.
摘要翻译：提供了一种用于平坦化多个半导体晶片的系统和方法。该方法包括以下步骤：使用至少两个抛光站沿着相同的处理路径处理每个晶片，以使晶片各自部分平坦化。该系统包括改进的处理路径，在每个处理点处交换具有主轴的可拆卸晶片承载头并将处理点之间的旋转索引台中的分离的晶片承载头传送。该系统还提供了使用具有气动可调节带张紧和对准能力的线性抛光机来提高抛光精度。

6. 发明授权

US5688360A Method and apparatus for polishing a semiconductor substrate wafer 失效
标题翻译：用于研磨半导体衬底晶片的方法和装置
公开(公告)号：US5688360A
公开(公告)日：1997-11-18
申请号：US611360
申请日：1996-03-05
申请人： Rahul Jairath
发明人： Rahul Jairath
IPC分类号： B08B1/00 , B08B1/04 , B24B41/06 , B24D13/00 , B24B7/00
CPC分类号： B24B53/017 , B08B1/007 , B08B1/04 , B24B37/26 , B24B37/30 , B24B41/068 , B24D13/12
摘要： A semiconductor wafer polishing apparatus includes a housing and a turntable mounted in the housing. The turntable has an axis of rotation and a surface for affixing a semiconductor wafer. The polishing apparatus also includes a motor mounted to the housing and connected to the turntable to supply a torque for rotating the turntable about the axis of rotation. A polishing assembly is connected to the housing and extends adjacent to the turntable surface. A polishing pad is affixed to the polishing assembly and is positionable to contact the semiconductor wafer. Some polishing pads are cylindrical in form. Other polishing pads have a conical form.
摘要翻译：半导体晶片抛光装置包括壳体和安装在壳体中的转台。转台具有旋转轴线和用于固定半导体晶片的表面。抛光装置还包括安装到壳体并连接到转盘的电动机，以提供用于使旋转体围绕旋转轴线旋转的转矩。抛光组件连接到壳体并且在转台表面附近延伸。抛光垫固定在抛光组件上并且可定位成与半导体晶片接触。一些抛光垫的形状是圆柱形的。其他抛光垫具有圆锥形。

7. 发明授权

US06855239B1 Plating method and apparatus using contactless electrode 失效
标题翻译：使用非接触电极的电镀方法和装置
公开(公告)号：US06855239B1
公开(公告)日：2005-02-15
申请号：US10256587
申请日：2002-09-27
申请人： Rahul Jairath
发明人： Rahul Jairath
IPC分类号： C25D5/00 , C25D5/18 , C25D7/12 , C25D17/00 , C25D17/06 , C25D17/10
CPC分类号： C25D17/10 , C25D5/18 , C25D17/001 , C25D17/06
摘要： A plating method and apparatus using contactless electrode is described. In one embodiment an inductive element is placed proximally to a substrate and a moving electromagnetic field generates an emf in the substrate to plate the surface. In another embodiment, a conductive plate is used, so that the conductive plate and the wafer, separated by a dielectric material, operate as two plates of a capacitor when voltage is applied to the conductive plate. The resulting electrostatic field impresses a charge potential on the substrate to plate the surface of the substrate.
摘要翻译：描述了使用非接触电极的电镀方法和装置。在一个实施例中，电感元件被放置在基底的近侧，并且移动的电磁场在衬底中产生用于平坦表面的电极。在另一个实施例中，使用导电板，使得由电介质材料分开的导电板和晶片作为电容器的两个板作用于导电板上。所产生的静电场在衬底上施加电荷电位以对衬底的表面进行平板化。

8. 发明授权

US06261155B1 Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher 失效
标题翻译：用于原位终点检测和使用线性抛光机优化化学机械抛光工艺的方法和装置
公开(公告)号：US06261155B1
公开(公告)日：2001-07-17
申请号：US09527171
申请日：2000-03-16
申请人： Rahul Jairath , Jiri Pecen , Saket Chadda , Wilbur C. Krusell , Jerauld J. Cutini , Erik H. Engdahl
发明人： Rahul Jairath , Jiri Pecen , Saket Chadda , Wilbur C. Krusell , Jerauld J. Cutini , Erik H. Engdahl
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B21/04 , B24B49/04 , B24D7/12 , H01L22/26
摘要： A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.
摘要翻译：用于基材的化学机械抛光（CMP）的线性抛光带包括固定到带上的开口和柔性监测窗，以关闭开口并在带中形成监测通道。也可以使用多个监视通道。包括干涉仪的膜厚监视器可以沿着带或者至少部分地设置在由其限制的区域内。监测通道和膜厚度监测器可用于CMP工艺中以确定CMP工艺的终点，确定衬底任何给定周长处的去除率，确定跨衬底表面的平均去除速率，确定跨越衬底表面的去除率变化基板表面，并优化去除速率和均匀性。

9. 发明授权

US5913714A Method for dressing a polishing pad during polishing of a semiconductor wafer 失效
标题翻译：在抛光半导体晶片期间修整抛光垫的方法
公开(公告)号：US5913714A
公开(公告)日：1999-06-22
申请号：US153817
申请日：1998-09-15
申请人： Konstantin Volodarsky , Rahul Jairath
发明人： Konstantin Volodarsky , Rahul Jairath
IPC分类号： B24B37/04 , B24B41/047 , B24B53/007 , B24B1/00
CPC分类号： B24B37/30 , B24B37/04 , B24B41/047 , B24B53/017
摘要： A polishing pad dressing method uses a polishing head for polishing a semiconductor wafer. This polishing head includes a housing, a wafer carrier movably mounted to the housing, and a pad dressing element movably mounted to the housing. The wafer carrier forms a wafer-supporting surface, and the dressing element surrounds the wafer-supporting surface. A first fluid actuator is coupled to the dressing element to bias the pad dressing element with respect to the housing, and a second fluid actuator is coupled to the wafer carrier to bias the wafer carrier with respect to the housing. First and second fluid conduits are coupled to the first and second actuators, respectively, such that fluid pressures in the first and second actuators are separately and independently adjustable with respect to one another. Biasing forces on the dressing element can thereby be dynamically adjusted with respect to biasing forces on the carrier during a polishing operation.
摘要翻译：抛光垫修整方法使用用于抛光半导体晶片的抛光头。该抛光头包括壳体，可移动地安装到壳体的晶片载体和可移动地安装到壳体的垫修整元件。晶片载体形成晶片支撑表面，并且修整元件围绕晶片支撑表面。第一流体致动器联接到修整元件以相对于壳体偏置衬垫修整元件，并且第二流体致动器联接到晶片载体以相对于壳体偏置晶片载体。第一和第二流体管道分别联接到第一和第二致动器，使得第一和第二致动器中的流体压力彼此独立且可独立地调节。因此，可以在抛光操作期间相对于载体上的偏压力动态地调整修整元件上的偏压力。

10. 发明授权

US5762536A Sensors for a linear polisher 失效
标题翻译：线性抛光机的传感器
公开(公告)号：US5762536A
公开(公告)日：1998-06-09
申请号：US797470
申请日：1997-02-06
申请人： Anil K. Pant , Joseph R. Breivogel , Douglas W. Young , Rahul Jairath , Erik H. Engdahl
发明人： Anil K. Pant , Joseph R. Breivogel , Douglas W. Young , Rahul Jairath , Erik H. Engdahl
IPC分类号： B24B21/04 , B24B21/08 , B24B37/04 , B24B49/16 , B24B49/00 , B24B51/00
CPC分类号： B24B21/04 , B24B21/08 , B24B37/04 , B24B49/16
摘要： A technique for utilizing sensors to monitor the polishing of a semiconductor wafer when a linear polisher is utilized to polish the wafer. The sensors are distributed along the surface or are coupled to openings along the surface to monitor the on-going polishing process. The sensed information from the sensors are processed in order to provide feedback for compensating the fluid dispensing when fluid platens are used and/or the downforce exerted by the wafer carrier.
摘要翻译：当使用线性抛光机抛光晶片时，利用传感器来监测半导体晶片的抛光的技术。传感器沿着表面分布或耦合到沿着表面的开口以监测正在进行的抛光过程。对来自传感器的感测信息进行处理，以便在使用流体压板和/或由晶片载体施加的下压力时提供用于补偿流体分配的反馈。

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