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1. 发明授权

US5256587A Methods of patterning and manufacturing semiconductor devices 失效
标题翻译：图案化和制造半导体器件的方法
公开(公告)号：US5256587A
公开(公告)日：1993-10-26
申请号：US911594
申请日：1992-07-10
申请人： Young K. Jun , Sa K. Ra , Dong W. Kim , Hyun H. Seo , Sung C. Kim , Jun K. Kim
发明人： Young K. Jun , Sa K. Ra , Dong W. Kim , Hyun H. Seo , Sung C. Kim , Jun K. Kim
IPC分类号： G03F7/09 , H01L21/02 , H01L21/033 , H01L21/3213 , H01L21/70
CPC分类号： H01L28/92 , G03F7/094 , H01L21/0332 , H01L21/0337 , H01L21/32139 , Y10S148/138 , Y10S438/947 , Y10S438/97
摘要： Methods of hyperfine patterning and manufacturing semiconductor devices. Steps in accordance with the present invention include coating a hemisphere particle layer having hills and valleys on a layer to be etched, the hemisphere particle layer having an etch selectivity higher than that of the first layer, filling the valleys of the hemisphere particle layer with a second layer having an etch selectivity higher than that of the hemisphere particle layer, and etching back the hills of the hemisphere particle layer to expose the first layer by using the second layer as a mask, and etching the first layer. By virtue of the hemisphere particle layer having alternating hills and valleys, it is possible to accomplish a hyperfine patterning of about 0.1 .mu.m. Since the mean size and the density of hills and valleys of the hemisphere layer can be controlled, the pattern size also can be controlled. Where the present invention is applied to capacitors of semiconductor memory elements, the capacitor node surface area can be increased, depending on the etched back depth of a polysilicon layer.
摘要翻译：超精细图案化和制造半导体器件的方法。根据本发明的步骤包括在待蚀刻的层上涂覆具有山丘和谷的半球粒子层，该半球粒子层的蚀刻选择性高于第一层的蚀刻选择性，将半球粒子层的谷部填充到半球粒子层的谷部第二层具有比半球颗粒层的蚀刻选择性更高的蚀刻选择性，并且通过使用第二层作为掩模蚀刻半球粒子层的山丘以暴露第一层，并蚀刻第一层。由于半球颗粒层具有交替的山丘和山谷，可以实现约0.1μm的超精细图案化。由于可以控制半球层的平均尺寸和丘陵和山谷的密度，因此也可以控制图案尺寸。在将本发明应用于半导体存储器元件的电容器的情况下，可以根据多晶硅层的蚀刻回深度来增加电容器节点表面积。

2. 发明授权

US4744412A Double-wall tube heat exchanger 失效
标题翻译：双壁管换热器
公开(公告)号：US4744412A
公开(公告)日：1988-05-17
申请号：US914105
申请日：1986-10-01
申请人： Sung C. Kim , Marvin P. Schwartz , Howard Y. Yoon
发明人： Sung C. Kim , Marvin P. Schwartz , Howard Y. Yoon
IPC分类号： F28F1/00 , F28F9/16
CPC分类号： F28F1/003
摘要： A heat exchanger utilizes a double walled heat transfer tube wherein the inner tube has a knurled external surface engaging the inner surface of an outer tube to provide multiple interconnected leak paths. The inner and outer tubes are attached to inner and outer tube sheets by roller expansion.
摘要翻译：热交换器使用双壁传热管，其中内管具有接合外管的内表面的滚花外表面以提供多个互连的泄漏路径。内管和外管通过辊膨胀连接到内管和外管片上。

3. 发明授权

US4348794A Double-walled finned heat transfer tube 失效
标题翻译：双层翅片传热管
公开(公告)号：US4348794A
公开(公告)日：1982-09-14
申请号：US168033
申请日：1980-07-11
申请人： Sung C. Kim , Marvin P. Schwartz
发明人： Sung C. Kim , Marvin P. Schwartz
IPC分类号： B23P15/26 , F28D7/02 , F28F1/06 , F28F1/24
CPC分类号： F28F1/24 , B23P15/26 , F28D7/024 , F28F1/06 , Y10T29/49361
摘要： A double-walled finned heat transfer tube is provided for use in heat exchangers. The heat transfer tube includes an inner tube inserted within an externally finned outer tube. The assembly is subjected to a crimping operation which produces radial convexities along the length of the outer tube which serve to lock the inner tube and outer tube together in intimate heat conducting relationship and which produces radial concavities between the inner and outer tubes which serve as leakage channels. The crimping operation also produces grooves in the external finned surface which improves heat transfer between the assembly and an external medium.
摘要翻译：提供一种用于热交换器的双壁翅片传热管。传热管包括插入在外部翅片外管内的内管。组件经受压接操作，其沿着外管的长度产生径向凸起，其用于将内管和外管锁定在一起，具有紧密的导热关系，并且在内管和外管之间产生用作泄漏的径向凹部频道压接操作还在外部带翅片表面上产生凹槽，这改善了组件和外部介质之间的热传递。

4. 发明授权

US5961373A Process for forming a semiconductor device 失效
标题翻译：用于形成半导体器件的工艺
公开(公告)号：US5961373A
公开(公告)日：1999-10-05
申请号：US876461
申请日：1997-06-16
申请人： Lei Ping Lai , Sung C. Kim
发明人： Lei Ping Lai , Sung C. Kim
IPC分类号： B24B53/007 , B24B53/017 , H01L21/304 , B24B53/00
CPC分类号： B24B53/017
摘要： A process for conditioning a polishing pad has been developed that incorporates in-situ conditioning where the conditioning is performed while the substrate (27, 40) is on the polishing pad (22) but terminates before the polishing of the substrate (27, 40) is completed. In one embodiment, ex-situ conditioning of the polishing pad (22) is used on the polishing pad between substrates (27, 40). The process has benefits of both in-situ and ex-situ conditioning.
摘要翻译：已经开发了一种用于调理抛光垫的方法，该方法包括在衬底（27,40）位于抛光垫（22）上而在衬底（27,40）的抛光之前终止的情况下进行调理的原位调节完成了。在一个实施例中，在基板（27,40）之间的抛光垫上使用抛光垫（22）的非原位调节。该方法具有原位和非原位调理的优点。

5. 发明授权

US5934980A Method of chemical mechanical polishing 失效
公开(公告)号：US5934980A
公开(公告)日：1999-08-10
申请号：US871028
申请日：1997-06-09
申请人： Daniel A. Koos , Sung C. Kim , Gurtej S. Sandhu
发明人： Daniel A. Koos , Sung C. Kim , Gurtej S. Sandhu
IPC分类号： B24B1/00 , B24B37/04 , H01L21/306 , H01L21/3105 , H01L21/321
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/105 , H01L21/31053
摘要： A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.

6. 发明授权

US6120354A Method of chemical mechanical polishing 有权
标题翻译：化学机械抛光方法
公开(公告)号：US6120354A
公开(公告)日：2000-09-19
申请号：US351424
申请日：1999-07-12
申请人： Daniel A. Koos , Sung C. Kim , Gurtej S. Sandhu
发明人： Daniel A. Koos , Sung C. Kim , Gurtej S. Sandhu
IPC分类号： B24B1/00 , B24B37/04 , H01L21/306 , H01L21/3105 , H01L21/321
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/105 , H01L21/31053
摘要： A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.
摘要翻译：平面化衬底的方法采用两个单独的化学机械抛光（CMP）步骤。在第一CMP步骤中，使用第一CMP浆液和抛光垫对衬底进行抛光。然后将稀释溶液施加到抛光垫上以除去第一CMP步骤的浆料。在第二CMP步骤中，在将稀释溶液施加到抛光垫以除去第一浆料之后，将第二CMP浆料溶液施加到抛光垫上以促进衬底的附加平面化。在本发明的一个具体实施方案中，稀释溶液包含具有对应于第一或第二CMP浆料溶液之一的pH值的pH值的缓冲溶液。根据本实施例的另一方面，在相应的第一和第二CMP步骤之前，将多种不同的稀释溶液施加到抛光垫。

7. 发明授权

US5409587A Sputtering with collinator cleaning within the sputtering chamber 失效
标题翻译：用溅射室内的校准器清洗溅射
公开(公告)号：US5409587A
公开(公告)日：1995-04-25
申请号：US123603
申请日：1993-09-16
申请人： Gurtej S. Sandhu , Sung C. Kim , David J. Kubista
发明人： Gurtej S. Sandhu , Sung C. Kim , David J. Kubista
IPC分类号： C23C14/34 , C23C14/56
CPC分类号： H01J37/32862 , C23C14/34 , C23C14/564 , H01J37/3447
摘要： A method of sputtering material onto semiconductor wafers includes: a) providing a sputtering chamber with a sputtering target, a wafer supporting chuck having a supported first wafer, and a collimator positioned between the target and first wafer for filtering material sputtered from the target onto the first wafer; b) providing ionized sputtering atoms within the chamber; c) bombarding the target with the ionized sputtering atoms to dislodge target atoms; d) passing the dislodged target atoms through collimator openings and onto the first wafer, the dislodged target atoms coating the collimator and openings passing therethrough; e) removing the sputter deposited first wafer from the sputtering chamber without breaking vacuum; f) after removing the sputtered first wafer, cleaning the collimator within the chamber without breaking vacuum between removal of the first wafer and the cleaning of the collimator within the chamber; and g) after cleaning of the collimator within the chamber, providing a second wafer on the wafer supporting chuck within the chamber without breaking vacuum between the cleaning of the collimator and the providing of the second wafer in the chamber; and thereafter sputter depositing target atoms onto the second wafer. The cleaning comprises providing the collimator with a negative potential effective to attract bombarding ionized sputtering atoms to dislodgingly clean target atoms from the collimator. The cleaning is to a degree sufficient to render collimator service lifetime at least equal to that of the sputtering target. Other cleaning techniques are disclosed.
摘要翻译：将材料溅射到半导体晶片上的方法包括：a）提供具有溅射靶的溅射室，具有受支撑的第一晶片的晶片支撑卡盘和位于靶和第一晶片之间的准直器，用于将从目标溅射的材料过滤到第一片; b）在室内提供电离溅射原子; c）用电离溅射原子轰击靶，以去除靶原子; d）将移动的靶原子通过准直器开口并移动到第一晶片上，移动的靶原子涂覆准直器和通过其的开口; e）从溅射室除去溅射沉积的第一晶片而不破坏真空; f）在去除溅射的第一晶片之后，清洁腔室内的准直器而不会在移除第一晶片和清洁腔室内的准直器之间破坏真空; 以及g）在腔室中清洁准直器之后，在腔室内的晶片支撑卡盘上提供第二晶片，而不会在准直器的清洁和在腔室中提供第二晶片之间破坏真空; 然后将目标原子溅射到第二晶片上。清洁包括为准直仪提供有效吸引轰击电离溅射原子以有效地从准直器中去除目标原子的负电位。清洁足够使准直器使用寿命至少等于溅射靶的寿命。公开了其他清洁技术。

8. 发明授权

US5270263A Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering 失效
标题翻译：使用氮等离子体溅射沉积氮化铝（AlN）的方法
公开(公告)号：US5270263A
公开(公告)日：1993-12-14
申请号：US810837
申请日：1991-12-20
申请人： Sung C. Kim , Chris C. Yu , Trung T. Doan
发明人： Sung C. Kim , Chris C. Yu , Trung T. Doan
IPC分类号： C23C14/06 , H01L21/311 , H01L21/318 , H01L31/18 , H01L21/465 , C23C14/00
CPC分类号： C23C14/0617 , H01L21/31105 , H01L21/318 , H01L31/1852 , Y02E10/544
摘要： A process for depositing a thin film of aluminum nitride (AlN) includes sputtering an aluminum target with energetic nitrogen ions generated in a nitrogen plasma. A single gas (i.e. nitrogen) is used as both the reactive gas and as the sputtering gas. The process is especially adapted for forming an etchstop layer for use in forming contact vias through a dielectric layer in semiconductor manufacture. The process is also useful in semiconductor manufacture for forming an aluminum nitride (AlN) film that may be used as a passivation layer, as a ceramic packaging material, as a mask for ion implantation, as a substrate material in hybrid circuits, and as a high bandgap window for GaAs solar cells.
摘要翻译：沉积氮化铝薄膜（AlN）的方法包括用氮等离子体中产生的能量氮离子溅射铝靶。单一气体（即氮气）用作反应气体和溅射气体。该方法特别适用于形成用于在半导体制造中通过介电层形成接触孔的蚀刻阻挡层。该方法在半导体制造中也可用于形成可用作钝化层的氮化铝（AlN）膜，作为陶瓷封装材料，作为用于离子注入的掩模，作为混合电路中的基板材料，以及作为 GaAs太阳能电池的高带隙窗口。

9. 发明授权

US4232735A Double-walled finned heat transfer tube 失效
标题翻译：双层翅片传热管
公开(公告)号：US4232735A
公开(公告)日：1980-11-11
申请号：US903049
申请日：1978-05-05
申请人： Sung C. Kim , Marvin P. Schwartz
发明人： Sung C. Kim , Marvin P. Schwartz
IPC分类号： F28F1/00 , F28F1/06 , F28F1/24 , F28F1/14
CPC分类号： F28F1/06 , F28F1/003 , F28F1/24
摘要： A double-walled finned heat transfer tube is provided for use in heat exchangers. The heat transfer tube includes an inner tube inserted within an externally finned outer tube. The assembly is subjected to a crimping operation which produces radial convexities along the length of the outer tube which serve to lock the inner tube and outer tube together in intimate heat conducting relationship and which produces radial concavities between the inner and outer tubes which serve as leakage channels. The crimping operation also produces grooves in the external finned surface which improves heat transfer between the assembly and an external medium.
摘要翻译：提供一种用于热交换器的双壁翅片传热管。传热管包括插入在外部翅片外管内的内管。组件经受压接操作，其沿着外管的长度产生径向凸起，其用于将内管和外管锁定在一起，具有紧密的导热关系，并且在内管和外管之间产生用作泄漏的径向凹部频道压接操作还在外部带翅片表面上产生凹槽，这改善了组件和外部介质之间的热传递。

10. 发明授权

US06234877B1 Method of chemical mechanical polishing 有权
标题翻译：化学机械抛光方法
公开(公告)号：US06234877B1
公开(公告)日：2001-05-22
申请号：US09590035
申请日：2000-06-07
申请人： Daniel A. Koos , Sung C. Kim , Gurtej S. Sandhu
发明人： Daniel A. Koos , Sung C. Kim , Gurtej S. Sandhu
IPC分类号： B24B100
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/105 , H01L21/31053
摘要： A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.
摘要翻译：平面化衬底的方法采用两个单独的化学机械抛光（CMP）步骤。在第一CMP步骤中，使用第一CMP浆液和抛光垫对衬底进行抛光。然后将稀释溶液施加到抛光垫上以除去第一CMP步骤的浆料。在第二CMP步骤中，在将稀释溶液施加到抛光垫以除去第一浆料之后，将第二CMP浆料溶液施加到抛光垫上以促进衬底的附加平面化。在本发明的一个具体实施方案中，稀释溶液包含具有对应于第一或第二CMP浆料溶液之一的pH值的pH值的缓冲溶液。根据本实施例的另一方面，在相应的第一和第二CMP步骤之前，将多种不同的稀释溶液施加到抛光垫。

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