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21. 发明申请

US20090072213A1 Programmable Via Structure for Three Dimensional Integration Technology 有权
标题翻译：可编程通道结构三维集成技术
公开(公告)号：US20090072213A1
公开(公告)日：2009-03-19
申请号：US12178921
申请日：2008-07-24
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , H01L23/5226 , H01L23/5252 , H01L23/5256 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L2924/0002 , H01L2924/00
摘要： A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof
摘要翻译：用于三维积分（3DI）半导体器件的可编程链路结构包括至少部分地填充有相变材料（PCM）和靠近PCM的加热装置的通孔。加热装置被配置为将PCM的可变形部分的电导率切换到较低电阻结晶状态和较高电阻无定形状态。因此，通路限定位于其一端的输入连接与位于其另一端的输出连接之间的可编程连接

22. 发明授权

US07460389B2 Write operations for phase-change-material memory 有权
标题翻译：相变材料存储器的写操作
公开(公告)号：US07460389B2
公开(公告)日：2008-12-02
申请号：US11193878
申请日：2005-07-29
申请人： Louis L. C. Hsu , Brian L. Ji , Chung Hon Lam
发明人： Louis L. C. Hsu , Brian L. Ji , Chung Hon Lam
IPC分类号： G11C13/00 , G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/0076 , G11C2013/0078 , G11C2213/79
摘要： Improved write operation techniques for use in phase-change-material (PCM) memory devices are disclosed. By way of one example, a method of performing a write operation in a phase-change-material memory cell, the memory cell having a set phase and a reset phase associated therewith, comprises the following steps. A word-line associated with the memory cell is monitored. Performance of a write operation to the memory cell for the set phase is initiated when the word-line is activated. The write operation to the memory cell for the set phase may then be continued when valid data for the set phase is available. A write operation to the memory cell for the reset phase may be performed when valid data for the reset phase is available. Other improved PCM write operation techniques are disclosed.
摘要翻译：公开了用于相变材料（PCM）存储器件的改进的写操作技术。作为一个示例，在相变材料存储器单元中执行写入操作的方法，具有设置相位和与其相关联的复位阶段的存储器单元包括以下步骤。监视与存储器单元相关联的字线。当字线被激活时，启动对设置阶段的存储单元的写操作的执行。然后可以在设定阶段的有效数据可用时继续对设定阶段的存储单元的写入操作。当复位阶段的有效数据可用时，可以执行对复位阶段的存储单元的写操作。公开了其它改进的PCM写操作技术。

23. 发明申请

US20080253177A1 Write Operations for Phase-Change-Material Memory 有权
标题翻译：相变材料存储器的写操作
公开(公告)号：US20080253177A1
公开(公告)日：2008-10-16
申请号：US12146128
申请日：2008-06-25
申请人： Louis L.C. Hsu , Brian L. Ji , Chung Hon Lam
发明人： Louis L.C. Hsu , Brian L. Ji , Chung Hon Lam
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/0076 , G11C2013/0078 , G11C2213/79
摘要： Improved write operation techniques for use in phase-change-material (PCM) memory devices are disclosed. By way of one example, a method of performing a write operation in a phase-change-material memory cell, the memory cell having a set phase and a reset phase associated therewith, comprises the following steps. A word-line associated with the memory cell is monitored. Performance of a write operation to the memory cell for the set phase is initiated when the word-line is activated. The write operation to the memory cell for the set phase may then be continued when valid data for the set phase is available. A write operation to the memory cell for the reset phase may be performed when valid data for the reset phase is available. Other improved PCM write operation techniques are disclosed.
摘要翻译：公开了用于相变材料（PCM）存储器件的改进的写操作技术。作为一个示例，在相变材料存储器单元中执行写入操作的方法，具有设置相位和与其相关联的复位阶段的存储器单元包括以下步骤。监视与存储器单元相关联的字线。当字线被激活时，启动对设置阶段的存储单元的写操作的执行。然后可以在设定阶段的有效数据可用时继续对设定阶段的存储单元的写入操作。当复位阶段的有效数据可用时，可以执行对复位阶段的存储单元的写操作。公开了其它改进的PCM写操作技术。

24. 发明申请

US20080224118A1 HEAT-SHIELDED LOW POWER PCM-BASED REPROGRAMMABLE EFUSE DEVICE 失效
公开(公告)号：US20080224118A1
公开(公告)日：2008-09-18
申请号：US12127994
申请日：2008-05-28
申请人： James P. Doyle , Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Xiao Hu Liu , Dennis M. Newns , Christy S. Tyberg
发明人： James P. Doyle , Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Xiao Hu Liu , Dennis M. Newns , Christy S. Tyberg
IPC分类号： H01L47/00
CPC分类号： H01L45/1233 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1666
摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

25. 发明申请

US20080165569A1 Resistance Limited Phase Change Memory Material 审中-公开
标题翻译：电阻有限相变记忆材料
公开(公告)号：US20080165569A1
公开(公告)日：2008-07-10
申请号：US11619625
申请日：2007-01-04
申请人： Chieh-Fang Chen , Shih-Hung Chen , Yi-Chou Chen , Thomas Happ , Chia Hua Ho , Ming-Hsiang Hsueh , Chung Hon Lam , Hsiang-Lan Lung , Jan Boris Philipp , Simone Raoux
发明人： Chieh-Fang Chen , Shih-Hung Chen , Yi-Chou Chen , Thomas Happ , Chia Hua Ho , Ming-Hsiang Hsueh , Chung Hon Lam , Hsiang-Lan Lung , Jan Boris Philipp , Simone Raoux
IPC分类号： G11C11/00 , H01L21/06 , H01L21/00
CPC分类号： G11C11/5678 , G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A memory cell comprises a first electrode, a second electrode and a composite material. The composite material electrically couples the first electrode to the second electrode. Moreover, the composite material comprises a phase change material and a resistor material. At least a portion of the phase change material is operative to switch between a substantially crystalline phase and a substantially amorphous phase in response to an application of a switching signal to at least one of the first and second electrodes. In addition, the resistor material has a resistivity lower than that of the phase change material when the phase change material is in the substantially amorphous phase.
摘要翻译：存储单元包括第一电极，第二电极和复合材料。复合材料将第一电极电耦合到第二电极。此外，复合材料包括相变材料和电阻材料。响应于向第一和第二电极中的至少一个施加开关信号，相变材料的至少一部分可操作以在基本上结晶相和基本非晶相之间切换。此外，当相变材料处于基本非晶相时，电阻材料的电阻率低于相变材料的电阻率。

26. 发明授权

US07351648B2 Methods for forming uniform lithographic features 有权
标题翻译：形成均匀光刻特征的方法
公开(公告)号：US07351648B2
公开(公告)日：2008-04-01
申请号：US11335372
申请日：2006-01-19
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung Hon Lam
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung Hon Lam
IPC分类号： H01L21/44 , H01L21/76
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/76885
摘要： Methods for fabricating a semiconductor device include forming a first layer on an underlying layer, forming a hardmask on the first layer, and patterning holes through the hardmask and first layer. An overhang is formed extending over sides of the holes. A conformal layer is deposited over the overhang and in the holes until the conformal layer closes off the holes to form a void/seam in each hole. The void/seam in each hole is exposed by etching back a top surface. The void/seam in each hole is extended to the underlying layer.
摘要翻译：制造半导体器件的方法包括在下层上形成第一层，在第一层上形成硬掩模，以及通过硬掩模和第一层图形化孔。形成在孔的侧面上延伸的突出端。保形层沉积在悬垂孔和孔中，直到共形层封闭孔，以在每个孔中形成空隙/接缝。每个孔中的空隙/接缝通过蚀刻顶部表面而暴露出来。每个孔中的空隙/接缝延伸到下层。

27. 发明授权

US07233177B2 Precision tuning of a phase-change resistive element 有权
标题翻译：相变电阻元件的精密调谐
公开(公告)号：US07233177B2
公开(公告)日：2007-06-19
申请号：US11098078
申请日：2005-04-04
申请人： Louis C. Hsu , Brian L. Ji , Chung Hon Lam
发明人： Louis C. Hsu , Brian L. Ji , Chung Hon Lam
IPC分类号： H03K5/22 , G06G7/28
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0064 , G11C2013/0054
摘要： The present invention comprises a method and structure for programming an on-chip phase-change resistor to a target resistance. Using an off-chip precision resistor as a reference, a state-machine determines a difference between the resistance of an on-chip resistor and the target resistance. Based upon this difference, the state machine directs a pulse generator to apply set or reset pulses to the on-chip resistor in order to decrease or increase, respectively, the resistance of the resistor, as necessary. In order to program the resistance of the phase-change resistor to a tight tolerance, it is successively reset and set by applying progressively decreasing numbers of reset pulses and set pulses, respectively, until the number of set pulses is equal to one and the target resistance of the on-chip resistor is reached.
摘要翻译：本发明包括用于将片上相变电阻器编程为目标电阻的方法和结构。使用片外精密电阻器作为参考，状态机确定片上电阻器的电阻与目标电阻之间的差。基于这种差异，状态机引导脉冲发生器将片上电阻器设置或复位脉冲施加到片上电阻器，以便根据需要分别降低或增加电阻器的电阻。为了将相变电阻器的电阻编程为严格的公差，通过分别逐渐递减的复位脉冲数和设定脉冲数来连续复位和设置，直到设定脉冲数等于1，目标值达到片上电阻的电阻。

28. 发明授权

US06548418B2 Dual layer etch stop barrier 失效
公开(公告)号：US06548418B2
公开(公告)日：2003-04-15
申请号：US10158249
申请日：2002-05-30
申请人： Chung Hon Lam , Eric Seung Lee , Francis Roger White
发明人： Chung Hon Lam , Eric Seung Lee , Francis Roger White
IPC分类号： H01L21302
CPC分类号： H01L21/0217 , H01L21/022 , H01L21/02271 , H01L21/31116 , H01L21/3185 , Y10S438/97
摘要： A method for reactive ion etching of SiO2 and an etch stop barrier for use in such an etching is provided. A silicon nitride (SixNy) barrier having a Six to Ny ratio (x:y) of less than about 0.8 and preferably the stoichiometric amount of 0.75 provides excellent resilience to positive mobile ion contamination, but poor etch selectivity. However, a silicon nitride barrier having a ratio of Six to Nx (x:y) of 1.0 or greater has excellent etch selectivity with respect to SiO2 but a poor barrier to positive mobile ion contamination. A barrier of silicon nitride is formed on a doped silicon substrate which barrier has two sections. One section has a greater etch selectivity with respect to silicon dioxide than the second section and the second section has a greater resistance to transmission of positive mobile ions than the first section. One section adjacent the silicon substrate has a silicon to nitrogen ratio of less than about 0.8. The second section, formed on top of the first section is formed with the ratio of the silicon to nitrogen of greater than about 0.8. Preferably the two sections together are from about 50 to about 100 nanometers thick.

29. 发明授权

US06504207B1 Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the same 失效
标题翻译：创建集成了高性能逻辑和NVRAM的EEPROM存储器结构的方法，以及与之相同的操作条件
公开(公告)号：US06504207B1
公开(公告)日：2003-01-07
申请号：US09609292
申请日：2000-06-30
申请人： Bomy A. Chen , Jay G. Harrington , Kevin M. Houlihan , Dennis Hoyniak , Chung Hon Lam , Hyun Koo Lee , Rebecca D. Mih , Jed H. Rankin
发明人： Bomy A. Chen , Jay G. Harrington , Kevin M. Houlihan , Dennis Hoyniak , Chung Hon Lam , Hyun Koo Lee , Rebecca D. Mih , Jed H. Rankin
IPC分类号： H01L2976
CPC分类号： H01L21/28273 , G11C16/0408 , H01L29/42328
摘要： A method and structure for a EEPROM memory device integrated with high performance logic or NVRAM. The EEPROM device includes a floating gate and program gate self-aligned with one another. During programming, electron tunneling occurs between the floating gate and the program gate.
摘要翻译：与高性能逻辑或NVRAM集成的EEPROM存储器件的方法和结构。 EEPROM器件包括浮置栅极和彼此自对准的程序栅极。在编程期间，在浮栅和程序门之间发生电子隧穿。

30. 发明授权

US09082954B2 PCRAM with current flowing laterally relative to axis defined by electrodes 有权
标题翻译： PCRAM，其电流相对于由电极限定的轴线横向流动
公开(公告)号：US09082954B2
公开(公告)日：2015-07-14
申请号：US13210020
申请日：2011-08-15
申请人： Hsiang-Lan Lung , Chung Hon Lam
发明人： Hsiang-Lan Lung , Chung Hon Lam
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/06 , H01L45/1246 , H01L45/144 , H01L45/16
摘要： An improved phase change memory device has a phase change structure including a thin part between a contact surface of an electrode and a dielectric structure. For example, the thin part has a maximum thickness that is smaller than a maximum width of the contact surface of the electrode. In another example, the phase change structure surrounds the dielectric structure. Several variations improve the contact between the phase change structure and an electrode.
摘要翻译：改进的相变存储器件具有包括电极的接触表面和电介质结构之间的薄部分的相变结构。例如，薄部具有比电极的接触表面的最大宽度小的最大厚度。在另一示例中，相变结构围绕电介质结构。几种变化改善了相变结构和电极之间的接触。

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