专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JPH02178965A INSULATED ISOLATION TYPE FIELD-EFFECT SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02178965A
公开(公告)日：1990-07-11
申请号：JP33164488
申请日：1988-12-29
申请人： NIPPON DENSO CO , NIPPON SOKEN
发明人： SAKAKIBARA NOBUYOSHI , FUJINO SEIJI , MURAMOTO HIDETOSHI , HATTORI TADASHI , YAMAOKA MASAMI
IPC分类号： H01L27/00 , H01L27/10 , H01L27/12 , H01L29/786
摘要： PURPOSE:To stabilize the electrical characteristics of an SOI element, and to prevent a back channel by applying bias voltage to a conductor electrically conducted with a channel region and electrically isolated from source-drain regions. CONSTITUTION:A conductor 21, which is arranged just under a channel region 33 while being formed onto at least an insulator 20 and buried into the insulator 20, a top face of which in integral combination is formed to a plane shape and which is conducted electrically with the channel region 33 and isolated electrically from source-drain regions 32a, 32b, is shaped. Consequently, the conductor 21 is formed just under the channel region 33 while being electrically conducted with the channel region 33, thus applying bias voltage to the conductor 21 even when any potential is applied to a semiconductor substrate 10. Accordingly, the electrical characteristics of an SOI(Silicon on Insulator) element are stabilized, and the generation of a back channel can be prevented.

12. 发明专利

JPS6276563A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPS6276563A
公开(公告)日：1987-04-08
申请号：JP21575885
申请日：1985-09-28
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO , SAKAKIBARA TOSHIO , SAKAKIBARA NOBUYOSHI
IPC分类号： H01L21/8247 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To increase the density of integration of memory elements by disposing a drain, a channel, a source, a floating gate and a control gate constituting each memory element in the thickness direction of a semiconductor substrate. CONSTITUTION:The title memory storage is constituted of a P-type silicon substrate 1, N-type impurity buried layers 21, 22 formed within the predetermined range of the silicon substrate 1, a P-type epitaxial layer 3 shaped to the surfaces of the silicon substrate 1 and these impurity buried layers 21, 22, oxide walls 4 partitioning the epitaxial layer 3 into each operating region 31, etc. Floating gates 51, 52 and 53, 54 are formed separate from oxide films 41 in prescribed thickness on the sides facing respective operating region in partition walls in the oxide layers 4, and control gates 61, 62 are shaped through oxide films 42 among control gates 51, 52 and 53, 54 on both sides at the central sections of each partition wall section. Respective impurity layer 21, 22 is introduced to the surface section of the substrate by conductive columns 25, 26 consisting of polycrystalline silicon shaped in the longitudinal direction to the oxide layers 4, and connected to a wiring pattern.

13. 发明专利

JPH05101888A MANUFACTURE OF ELECTROLUMINESCENT LAYER 失效
公开(公告)号：JPH05101888A
公开(公告)日：1993-04-23
申请号：JP26382491
申请日：1991-10-11
申请人： NIPPON DENSO CO
发明人： SAKAKIBARA NOBUYOSHI , TOMINAGA TAKAYUKI , HATTORI TAMOTSU
IPC分类号： G09F9/30 , H05B33/10 , H05B33/12 , H05B33/14
摘要： PURPOSE:To suppress the roughness of the surface of a luminescence layer composed of ZnS crystal and improve the step coverage in the case an insulating film, an electrode, etc., are formed in following processes. CONSTITUTION:An under part electrode 22 is formed on a glass substrate 21 and while the substrate 21 being heated, a polycrystalline first luminescence layer 24 is deposited on the electrode 22. After that, the temperature of the substrate is lowered and then an amorphous second luminescence layer 25 is deposited on the first luminescence layer 24 and further a cap layer 27 of a nitride film is formed on it. Then, the amorphous second luminescence layer 25 is crystallized by heating and a crystallized EL luminescence layer 26 composed of the first and second luminescence layers is thus formed.

14. 发明专利

JPH04257228A POLYCRYSTALLINE SILICON TRANSISTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04257228A
公开(公告)日：1992-09-11
申请号：JP1906991
申请日：1991-02-12
申请人： NIPPON SOKEN , NIPPON DENSO CO
发明人： SAKAKIBARA NOBUYOSHI , TOMINAGA TAKAYUKI , HASEBE YUJI , HATTORI TADASHI
IPC分类号： H01L29/40 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To provide a polycrystalline silicon transistor and a manufacturing method thereof in which a polycrystalline silicon active layer can be ohmically connected to source/drain leading electrodes, and connecting area of the silicon is suppressed to a minimum limit to reduce a leakage current. CONSTITUTION:A polycrystalline silicon active layer 2 is formed together with a gate electrode 4a and a gate insulating film 3 in a self-alignment manner on an insulating substrate 1, a high-doped silicon 6a is formed only on the sidewall of the layer 2, and source.drain metal layers 7a, 7b are brought into contact with the silicon 6a.

15. 发明专利

JPH0322567A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0322567A
公开(公告)日：1991-01-30
申请号：JP15798889
申请日：1989-06-20
申请人： NIPPON SOKEN , NIPPON DENSO CO
发明人： MURAMOTO HIDETOSHI , FUJINO SEIJI , SAKAKIBARA NOBUYOSHI , HATTORI TADASHI , SAKAKIBARA TOSHIO
IPC分类号： H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To enhance an insulating film in step coverage and dielectric breakdown strength by a method wherein the upper end of the peripheral part of a silicon island is formed into a shape with a curved surface whose curvature is so prescribed to enable the silicon island to be gradually thin. CONSTITUTION:A polycrystalline Si film 10 is formed on an insulating substrate I where a field insulating film 12 has been laid, a resist R1 is formed only on a part where a silicon island is to be formed, which is patterned, and then the resist R1 is removed. The whole face of the substrate 1 on which the silicon island 2 has been formed is subjected to a dry oxidation process at a temperature of 1200 deg.C or so for 6 hours or so to form an insulating film 23 of SiO2, and then the insulating film 23 is etched to remove. By this process, the upper peripheral part of the silicon island 2 is formed into a smoothly curved surface. Then, spin-on-glass is applied thereon to form a dummy oxide film 3, which is etched and then subjected to a dry etching to form a gate insulating film 4.

16. 发明专利

JPS6191432A Ionic-wind type air cleaner 失效
标题翻译：离子风式空气清洁机
公开(公告)号：JPS6191432A
公开(公告)日：1986-05-09
申请号：JP21222584
申请日：1984-10-09
申请人： Nippon Denso Co Ltd , Nippon Soken Inc
发明人： HATTORI TADASHI , FUKAMI AKIRA , SAKAKIBARA NOBUYOSHI , NOGUCHI HIROKI , NABETA SADAICHI
IPC分类号： F24F7/00 , F24F3/16
CPC分类号： F24F3/166
摘要： PURPOSE:To efficiently collect dusts and dirts in air by forming the tile air cleaner from an ionic-wind generator provided on the side of a suction port within a case, a dust collecting electrode and a high voltage power supply which are provided at the inner side of a blow-off port in a freely attachable and detachable manner. CONSTITUTION:Air within the air cleaner enters the room via the inlet of a main body case 100 and an air suction port 103, passing through spaces between discharge, opposite and dust collecting electrodes, and is blown off into the room via an air blow-off port 104. In order to increase the quantity of air flow, two air flow-raising parts are provided in the right and left hands. Since the direction of the air flows at the blow-off parts are guided to the side of the blow-off port 104 as shown by arrows by the bottom portion 40a of an accommodating box 40, they are the same, and mutual interference thereof can be prevented. Therefore, reduction of the air flow quantity is small. Since suction ports 103 are provided in the right and left directions and the blow-off ports 104 are provided at the lower part, air of a high dust concentration existing in the vicinity of ceiling can be sucked up, and hence clean air can be blown off downwardly. The attenuation of the speed of the generated ionic air flow is small, and attachment and detachment of the dust collecting electrodes are facilitated.
摘要翻译：目的：通过从外壳吸入口侧设置的离子风发生器形成瓦片空气净化器，在内部设置集尘电极和高压电源，有效地收集空气中的灰尘和污物一个可以自由拆装的排气口。构成：空气净化器内的空气通过主体壳体100和空气吸入口103的入口进入室内，通过排放物，相对和集尘电极之间的空间，并通过吹气口关闭端口104.为了增加空气流量，在左手和左手中设置两个气流升高部件。由于吹出部分的空气流动方向由收纳箱40的底部40a被箭头所示地引导到吹出口104侧，所以它们是相同的，并且它们的相互干扰可以被阻止因此，气流量的减少很小。由于吸入口103设置在左右方向上并且吹出口104设置在下部，因此可以吸收存在于天花板附近的高浓度浓度的空气，因此能够吹出清洁空气向下。所产生的离子气流速度的衰减小，集尘电极的附着和分离容易。

17. 发明专利

JPS60132661A AIR PURIFIER 失效
公开(公告)号：JPS60132661A
公开(公告)日：1985-07-15
申请号：JP24143183
申请日：1983-12-20
申请人： NIPPON SOKEN , NIPPON DENSO CO
发明人： SAKAKIBARA NOBUYOSHI , HATSUTORI TADASHI , FUKAMI AKIRA , NOGUCHI HIROKI , MIURA KAZUHIKO , NABETA SADAICHI
IPC分类号： B60H3/06 , B03C3/12 , B03C3/40 , B03C3/41
摘要： PURPOSE:To enhance the wind velocity of an air purifier utilizing an ion wind in such a state that ozone generated by corona discharge is suppresse low, by employing three electrodes, that is, a discharge electrode, an intermediate electrode and an opposed electrode. CONSTITUTION:When a discharge electrode 10 is connected to the negative pole 41 of a high voltage power source 40 while an opposed electrode 30 to the positive pole 51 of a high voltage power source 50 and voltage with several kV- several ten kV is respectively applied to both electrodes, the concentration of an electric field is formed in the space in the vicinity of discharge electrodes 11 to generate corona discharge and both of a negative ion and a neutral gas molecule are directed to an intermediate electrode 20 to generate a wind while the negative ion passed through the intermediate electrode 20 is accelerated by energy due to the electric field formed between the intermediate electrode 20 and the opposed electrode 30. Therefore, energy applied to the neutral molecule becomes large and ion wind velocity is enhanced.

18. 发明专利

JPS60122062A AIR PURIFIER 失效
公开(公告)号：JPS60122062A
公开(公告)日：1985-06-29
申请号：JP23039383
申请日：1983-12-05
申请人： NIPPON SOKEN , NIPPON DENSO CO
发明人： SAKAKIBARA NOBUYOSHI , HATSUTORI TADASHI , FUKAMI AKIRA , NOGUCHI HIROKI , NABETA SADAICHI , MIURA KAZUHIKO
IPC分类号： B03C3/12 , B03C3/41 , B03C3/60 , B03C3/66 , F24F1/00
摘要： PURPOSE:To obtain a small-sized and lightweight electrical dust collector with high collection efficiency and no danger of spark discharge by covering one electrode between an electric field forming electrode and a dust collecting electrode for collecting charged particles of dust which is used as a cathode with an insulating material. CONSTITUTION:The minus terminal of the first power source 40 and a discharge electrode 11 and the plus terminal and a dust collecting electrode 31 are connected respectively with a lead wire, and from several to over then KV voltage is impressed. Accordingly, corona discharge is formed in a space in the vicinity of the discharge electrode 11, and the ions having minus polarity are negatively charged while being attracted by the collecting electrode 31. Meanwhile, the minus terminal of the second high-voltage power source 50 and an electric field forming electrode 21 and the plus terminal and the dust collecting electrode 31 are connected respectively with a lead wire, and the voltage is similarly impressed to form a DC electric field vertical to the flow of charged dust particles. The emission of electrons causing spark discharge can be prevented by covering the electric field forming electrode 21 with an insulating material.

19. 发明专利

JPS60118257A ION WIND TYPE AIR PURIFIER 失效
公开(公告)号：JPS60118257A
公开(公告)日：1985-06-25
申请号：JP22506483
申请日：1983-11-29
申请人： NIPPON SOKEN , NIPPON DENSO CO
发明人： NOGUCHI HIROKI , KOBAYASHI TOSHIKI , FUKAMI AKIRA , HATSUTORI TADASHI , SAKAKIBARA NOBUYOSHI , NABETA SADAICHI
IPC分类号： B03C3/40 , B03C3/12 , B03C3/64
摘要： PURPOSE:To enhance the accuracy of the gap between a discharge electrode and an opposed electrode, by laminating a plurality of printed boards, each of which is formed by providing the discharge electrode and the opposed electrode on an insulating sheet so as to oppose both of them to each other in a state holding the opening part of he insulating sheet therebetween, through gaps. CONSTITUTION:In an insulating sheet 1 having an opening part 11 comprising an electric insulating material, a discharge electrode 2 and an opposed electrode 3 are provided on the insulating sheet 1 so as to be opposed to each other in a state holding the opening part therebetween to form a printed board 10 while a plurality of these printed boards 10 are laminated. By this method for providin the electrodes on one printed board, fabrication and assembling become simple and the accuracy of the gap between the discharge electrode and the opposed electrode is enhanced and, even if one of plural printed boards is damages, only the damaged one may be replaced and, further, if the size of an air purifier is various, countermeasure can be taken by changing the number of printed boards to be put into the air purifier.

20. 发明专利

JPS6029532A AIR PURIFIER 失效
公开(公告)号：JPS6029532A
公开(公告)日：1985-02-14
申请号：JP13741383
申请日：1983-07-26
申请人： NIPPON SOKEN , NIPPON DENSO CO
发明人： NISHIDA MINORU , HATSUTORI TADASHI , FUKAMI AKIRA , SAKAKIBARA NOBUYOSHI , NABETA SADAICHI
IPC分类号： F24F7/00 , B03C3/02 , F24F3/16
摘要： PURPOSE:To enable to reduce the ozone concentration in the discharged air by a structure wherein heaters are fitted on the blow-off port side with respect to opposed electrodes so as to allow to decompose ozone, which has produced at an ionized air generating section, by means of high temperature. CONSTITUTION:Discharge electrodes 1 are arranged on a blow-off port side in a case, on which a suction port and a blow-off port are provided. At the same time, opposed electrodes 2, which induce ionized air and simultaneously collect dusts carried by the ionized air, are arranged opposite to the electrodes 1 with discharge gap between them. In addition, potential difference is produced between the electrodes 1 and the electrodes 2 by means of high tension source 4 and, at the same time, at least ozone erasing members 3 equipped with heaters 31 are arranged on the blow-off port side with respect to the electrodes 2. Because the ozone produced at an ionized air generating section can be decomposed by means of high temperature developed by the heaters, the ozone concentration in the discharged air can be reduced.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式