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1. 发明专利

DE68910327T2 未知
公开(公告)号：DE68910327T2
公开(公告)日：1994-05-19
申请号：DE68910327
申请日：1989-07-21
申请人： NIPPON DENSO CO , NIPPON SOKEN
发明人： OHARA FUMIO , KAWAI TOSHIYUKI , SAKAKIBARA NOBUYOSHI , HUZINO SEIZI , HATTORI TADASHI , KAWAMOTO KAZUNORI
IPC分类号： H01L21/60 , H01L23/13 , H01L23/538 , H01L29/06 , H01L23/52
摘要： This invention relates to a semiconductor device of a type wherein a semiconductor chip is directly bonded to a substrate and contact is established between them. The semiconductor device comprises the substrate in which fixing holes having a tapered portion are formed, the semiconductor chip having a tapered portion corresponding to the fixing hole and having devices formed thereon, coupling members for coupling the tapered portions of the substrate and the semiconductor chip in such a manner as to oppose to each other, a flattening layer formed in such a manner as to extend over the substrate and the semiconductor chip and wires electrically connected to said devices and at least part of which is formed on the flattening layer. According to this structure, positioning accuracy of the semiconductor chip can be improved easily and the wiring pitch can be reduced drastically.

2. 发明专利

DE68910327D1 未知
公开(公告)号：DE68910327D1
公开(公告)日：1993-12-02
申请号：DE68910327
申请日：1989-07-21
申请人： NIPPON DENSO CO , NIPPON SOKEN
发明人： OHARA FUMIO , KAWAI TOSHIYUKI , SAKAKIBARA NOBUYOSHI , HUZINO SEIZI , HATTORI TADASHI , KAWAMOTO KAZUNORI
IPC分类号： H01L21/60 , H01L23/13 , H01L23/538 , H01L29/06 , H01L23/52
摘要： This invention relates to a semiconductor device of a type wherein a semiconductor chip is directly bonded to a substrate and contact is established between them. The semiconductor device comprises the substrate in which fixing holes having a tapered portion are formed, the semiconductor chip having a tapered portion corresponding to the fixing hole and having devices formed thereon, coupling members for coupling the tapered portions of the substrate and the semiconductor chip in such a manner as to oppose to each other, a flattening layer formed in such a manner as to extend over the substrate and the semiconductor chip and wires electrically connected to said devices and at least part of which is formed on the flattening layer. According to this structure, positioning accuracy of the semiconductor chip can be improved easily and the wiring pitch can be reduced drastically.

3. 发明专利

DE3670403D1 未知
公开(公告)号：DE3670403D1
公开(公告)日：1990-05-17
申请号：DE3670403
申请日：1986-07-18
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO , SAKAKIBARA TOSHIO , SAKAKIBARA NOBUYOSHI
IPC分类号： H01L29/788 , H01L29/78

4. 发明公开

EP0448713A4 SEMICONDUCTOR DEVICE. 失效
标题翻译：半导体器件。
公开(公告)号：EP0448713A4
公开(公告)日：1991-07-09
申请号：EP89908519
申请日：1989-07-21
申请人： NIPPON DENSO CO , NIPPON SOKEN
发明人： OHARA FUMIO , KAWAI TOSHIYUKI , SAKAKIBARA NOBUYOSHI , HUZINO SEIZI , HATTORI TADASHI , KAWAMOTO KAZUNORI
IPC分类号： H01L21/60 , H01L23/13 , H01L23/538 , H01L29/06
CPC分类号： H01L24/32 , H01L23/13 , H01L23/5384 , H01L24/24 , H01L24/82 , H01L29/0657 , H01L2224/24137 , H01L2224/24225 , H01L2224/24227 , H01L2224/73267 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01033 , H01L2924/01322 , H01L2924/014 , H01L2924/04953 , H01L2924/10157 , H01L2924/10158 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/00
摘要： This invention relates to a semiconductor device of a type wherein a semiconductor chip is directly bonded to a substrate and contact is established between them. The semiconductor device comprises the substrate in which fixing holes having a tapered portion are formed, the semiconductor chip having a tapered portion corresponding to the fixing hole and having devices formed thereon, coupling members for coupling the tapered portions of the substrate and the semiconductor chip in such a manner as to oppose to each other, a flattening layer formed in such a manner as to extend over the substrate and the semiconductor chip and wires electrically connected to said devices and at least part of which is formed on the flattening layer. According to this structure, positioning accuracy of the semiconductor chip can be improved easily and the wiring pitch can be reduced drastically.

5. 发明专利

JPH07130956A NANO-STEP STRUCTURE BODY AND METHOD OF MANUFACTURING MINUTE COIL USING IT 失效
公开(公告)号：JPH07130956A
公开(公告)日：1995-05-19
申请号：JP27267993
申请日：1993-10-29
申请人： NIPPON DENSO CO
发明人： NAGAKUBO MASAO , SAKAKIBARA NOBUYOSHI
IPC分类号： G01R33/02 , B82B1/00 , B82B3/00 , G01J3/18 , G02B5/18 , H01F17/00 , H01L21/822 , H01L27/04 , H01L29/06
摘要： PURPOSE:To provide a method of manufacturing a minute coil of a line width of nanometer order and particularly obtain a method of manufacturing a step structure body of the nanometer order. CONSTITUTION:A target 151 of SiO2 and a target 152 of Al2O3 are provided within a vacuum tub 11, and reaction gas is introduced from gas guide openings 18, 19 to an ion source 16 to activate this ion source 16, and an ion is accelerated and emitted towards the target 151 to perform sputtering. The SiO2 material of the target 151 that is performed the sputtering is deposited on the surface of a substrate 17 to form a layer 201 of SiO2. Thereafter, the target 152 is sputtered to form a first Al layer 211, and these are repeated to make a multilayer film structure body 22. A side surface of this structure body 22 is selectively etched, whereby a nano-step structure body is completed according to differences in etching effects.

6. 发明专利

JPH05235127A 失效
公开(公告)号：JPH05235127A
公开(公告)日：1993-09-10
申请号：JP7354492
申请日：1992-02-24
申请人： NIPPON DENSO CO
发明人： HASEBE YUJI , SAKAKIBARA NOBUYOSHI
IPC分类号： H01L21/66 , H01L27/12
摘要： PURPOSE:To enhance the reliability of a device by a method wherein the temperature of the device during its operation is controlled accurately to a designed operating temperature. CONSTITUTION:A current control circuit 31 is controlled by using a microcomputer 50. An SOI device 9, a first thin film 1, a second thin film 2, a third thin film 3, a first bonding layer 11, a second bonding layer 12, an electromotive- force detection circuit 30 and the microcomputer 50 are formed on a board 40. An operating program is stored in advance in the microcomputer 50 so as to control an electric current by judging an electromotive force between the second thin film and the third thin film and by judging whether the SOI device 9 exists within a proper temperature range or not. Thereby, the temperature of the SOI device 9 can be controlled in such a way that it always exists within a designed operating temperature region.

7. 发明专利

JPH05129200A MANUFACTURE OF SEMICONDUCTOR FILM 失效
公开(公告)号：JPH05129200A
公开(公告)日：1993-05-25
申请号：JP28988691
申请日：1991-11-06
申请人： NIPPON DENSO CO
发明人： SAKAKIBARA NOBUYOSHI , HASEBE YUJI , OSHIMA HISAZUMI
IPC分类号： H01L21/20 , H01L29/06
摘要： PURPOSE:To form a single crystal semiconductor film on an insulated substrate with no restriction in the material of the insulated substrate CONSTITUTION:Seeds based on the projection 4a of a single crystal Si wafer 4 having equal crystal axes are supplied from the surface side of an amorphous Si thin film 3' so as to perform solid phase growth from these seeds. Thereby, a single crystal Si thin film 3 having a fixed orientation to be decided by the single crystal Si wafer 4 is formed. Later, two sheets of wafers 1, 4 are oxidized while being stuck together and forming an oxide film 5 in the contact part followed by being dipped into an HF water solution so as to remove the oxide film 5 by etching. Thereby, the wafer 1, in which a single crystal Si thin film 3 is formed, and the single crystal Si wafer 4 for the seed are separated.

8. 发明专利

JPH0555627A INJECTION LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH0555627A
公开(公告)日：1993-03-05
申请号：JP21552891
申请日：1991-08-27
申请人： NIPPON DENSO CO
发明人： OSHIMA HISAZUMI , SAKAKIBARA NOBUYOSHI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/16 , H01L33/30 , H01L33/34 , H01L33/40
摘要： PURPOSE:To provide an injection light emitting element which can emit light without using laser beam as an excitation source. CONSTITUTION:Porous silicon 7 of a first conductive type is formed on a surface of a single crystal silicon substrate 1, while a space in the porous silicon 7 is filled and fixed by an SiO2 film 9 by means of CVD method. A window layer 10 of a second conductive type made of amorphous silicon or polysilicon is formed in contact with the porous silicon 7. A surface and a rear electrodes 11, 12 are placed on both sides of a pn junction formed by the porous silicon 7 and the window layer 10. Then with voltage applied between the electrodes, injection of minority carriers occur at the pn junction so that recombination of the carriers occurs at the pn junction to have light emitted and transmitted through the window layer 10.

9. 发明专利

JPH0513430A SEMICONDUCTOR EMENENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0513430A
公开(公告)日：1993-01-22
申请号：JP19073291
申请日：1991-07-04
申请人： NIPPON DENSO CO
发明人： TOMINAGA TAKAYUKI , SAKAKIBARA NOBUYOSHI , HASEBE YUJI
IPC分类号： H01L21/265 , H01L21/336 , H01L29/78
摘要： PURPOSE:To manufacture the semiconductor element having high reliability and capable of sufficiently relieving the electric field even if the element is miniaturized. CONSTITUTION:The title semiconductor element is provided with a source region 7 and a drain region 8 having the inverse conductivity type to that of the semiconductor substrate 1 formed on the surface of one conductivity type semiconductor substrate 1 at specific intervals as well as a gate electrode 3 formed on the semiconductor substrate 1 between the source region 7 and the drain region 8 through the intermediary of a gate insulating film 2. On the other hand, a low concentration region 91 adjacent to the source region 7 and the drain region 8 wherein the impurity concentration is continuously changed to be lowered in proportion to the distance from said regions 7, 8 is provided between said regions 7 and 8.

10. 发明专利

JPH04349619A MANUFACTURE OF SINGLE CRYSTAL SEMICONDUCTOR FILM 失效
公开(公告)号：JPH04349619A
公开(公告)日：1992-12-04
申请号：JP12336491
申请日：1991-05-28
申请人： NIPPON DENSO CO
发明人： HASEBE YUJI , SAKAKIBARA NOBUYOSHI , TOMINAGA TAKAYUKI
IPC分类号： H01L21/20 , H01L21/02 , H01L21/306 , H01L27/12
摘要： PURPOSE:To improve the uniformity of a single crystal SOI film. CONSTITUTION:A polycrystalline silicon film 2 is formed on an amorphous insulating substrate 1 and is patterned into an island substrate. Thereafter, fine crystal nuclei 4 oriented in the axis are formed by anisotropic etching. After an amorphous silicon film 5 is deposited, recrystallization is performed with the fine crystal nuclei 4 as seeds through annealing to yield single crystal silicon islands 6. Accordingly, the single crystal silicon island 6 is specified in its size by the amorphous silicon film 5 and is uniquely defined in its axis directivity by the fine crystal nucleus 4. Thus, the uniformity is improved.

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