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11. 发明专利

JPH08152314A INSPECTION EQUIPMENT FOR ELECTRONIC DEVICE 失效
公开(公告)号：JPH08152314A
公开(公告)日：1996-06-11
申请号：JP29424894
申请日：1994-11-29
申请人： HITACHI LTD , HITACHI VIDEO IND INF SYST INC
发明人： DOI HIDEAKI , KENBO YUKIO , NOGUCHI MINORU , MORIOKA HIROSHI , NISHIYAMA HIDETOSHI , MINAMITANI NORIHIRO , TAKEI SATOSHI , OSHIMA YOSHIMASA , WATANABE KENJI , MATSUOKA KAZUHIKO , SHIGYO YOSHIHARU
IPC分类号： G01B11/24 , G01B11/245 , G01B11/30 , G01N21/88 , G01N21/94 , G01N21/956 , H01L21/66 , H05K3/00
摘要： PURPOSE: To alter the inspection rate depending on the object to be inspected by providing a circuit for outputting a control signal corresponding to the speed of a stage and altering the signal processing rate depending on the control signal. CONSTITUTION: An object 22 mounted on a stage 10 is illuminated by means of an illumination optical system 12 and the optical image of the object 22 is detected by a linear sensor 14 in a detection optical system 13 which then delivers an image signal 100 to a sensor signal processing circuit 17. Based on control information 103 received from a control board 21, a control circuit 20 delivers a signal 104 to a stage control circuit 15, a timing data 105 to a sensor drive circuit 16, a signal 106 to the circuit 17, and a synchronism control data 107 to a synchronism signal generation circuit 19. The circuit 15 drives a motor 11 with the signal 104 to control the stage. The circuit 19 generates a signal 108 based on the data 107 and delivers the signal 108 to the circuit 16. The circuit 16 drives the sensor 14 and the circuit 17 with a timing pulse 109 based on the data 105. Consequently, the object can be inspected at an optimal rate without requiring any modification of hardware.

12. 发明专利

JP2007212479A System and method for defect inspection 有权
标题翻译：缺陷检查系统与方法
公开(公告)号：JP2007212479A
公开(公告)日：2007-08-23
申请号：JP2007122717
申请日：2007-05-07
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： HAMAMATSU REI , NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , WATANABE TETSUYA
IPC分类号： G01N21/956 , G01B11/30
摘要： PROBLEM TO BE SOLVED: To provide a system and method for defect inspection which can discriminate various shaped scratches from adhered foreign substances, generated on the surface of any processed subject to be inspected, when implementing of grinding or polishing, such as Chemical Mechanical Polishing (CMP) on the processed subject (for example, insulating film on semiconductor substrate) is conducted, in the manufacturing of semiconductor or magnetic head. SOLUTION: The present invention is characterized in that epi-illumination and oblique illumination are applied by using almost the same luminous flux to scratches or foreign substances generated on surface of polished or ground insulating film to discriminate shallow scratches from foreign substances, based on correlation between the times of the epi-illumination and the oblique illumination, such as the intensity ratios of the scattered lights generated from both the shallow scratches and the foreign substances. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于缺陷检查的系统和方法，其可以在实施研磨或抛光时，例如化学品（例如化学品）中区分各种形状的划痕和被检查的待处理物体的表面上产生的附着异物在半导体或磁头的制造中，对加工对象（例如，半导体基板上的绝缘膜）进行机械抛光（CMP）。解决方案：本发明的特征在于，通过对抛光或接地绝缘膜的表面上产生的划痕或异物使用几乎相同的光通量来应用表面照明和倾斜照明，以区别基于异物的浅划痕关于外照明和倾斜照明的时间之间的相关性，例如由浅刮痕和异物产生的散射光的强度比。版权所有（C）2007，JPO＆INPIT

13. 发明专利

JP2003197699A PROCESS PERFORMING EQUIPMENT AND SYSTEM THEREFOR 审中-公开
公开(公告)号：JP2003197699A
公开(公告)日：2003-07-11
申请号：JP2002262450
申请日：2002-09-09
申请人： HITACHI LTD
发明人： NOGUCHI MINORU , KENBO YUKIO , MORIOKA HIROSHI , NISHIYAMA HIDETOSHI , DOI HIDEAKI , SHIBA MASATAKA , SHIGYO YOSHIHARU , MATSUOKA KAZUHIKO , WATANABE KENJI , OSHIMA YOSHIMASA , ENDO FUMIAKI , TANIGUCHI YUZO
IPC分类号： G01B11/30 , G01N21/956 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a process performing equipment, a system for the same and product storing equipment by which a semiconductor substrate can be produced by high yield, by reducing the generation of abnormal stuck foreign matter to the semiconductor substrate in various kinds of process processors. SOLUTION: In order to detect the foreign matter stuck onto a work 4 carried by a handling mechanism 5 inside of a carrying room 104 or inside of a spare room in the process performing equipment, the process performing equipment is provided with a foreign matter inspection device having a detection head 1a and a processing means. The detection head 1a comprises a plurality of sets of an illumination optical system for irradiating the surface of the work 4 with a luminous flux converged from a direction oblique to the surface of the work 4, and a detection optical system which collects scattered light from the foreign matter on the work irradiated by the illumination optical system an photodetects it by a photoelectric conversion means. The processing means processes a signal detected by the photoelectric conversion means of the detection head to extract a signal from the foreign matter. COPYRIGHT: (C)2003,JPO

14. 发明专利

JP2003031629A Method and apparatus for testing pattern 审中-公开
标题翻译：测试模式的方法和装置
公开(公告)号：JP2003031629A
公开(公告)日：2003-01-31
申请号：JP2001216254
申请日：2001-07-17
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIROI TAKASHI , WATANABE MASAHIRO , TANAKA MAKI , KUNI TOMOHIRO , SHISHIDO CHIE , NISHIYAMA HIDETOSHI , OKUDA HIROTO , MIYAI YASUSHI , GUNJI YASUHIRO , SHIMODA ATSUSHI , OSHIMA YOSHIMASA
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To eliminate the problem that in a method wherein a charged particle beam is cast on a substrate to be tested, and secondary electrons or the like emitted are detected to obtain an image, and then the obtained image is compared with a reference image to test the substrate for pattern defects or a defect is checked by moving to a location of a pattern defect, the substrate to be tested is charged up by the irradiation of the charged particle beam, causing the charged particle beam to be bent and then the positional deviation of the defect.
SOLUTION: An amount of positional deviation at the time of inspection and an amount of positional deviation from a reference image are inspected and, at the same time, calculated to correct the location of the defect at the time of inspection. Defects information is added with an image at the time of inspection, and then is corrected for an amount of positional deviation between image information and layout information. The defects information is added with the image at the time of inspection, and then is compared with an image at the time of checking defects to correct the location of the defect. When checking defects, an image is obtained and then is added to the defects information, and the defects information is compared with the image at the time of checking defects and an image detected by another apparatus or with the layout information, to correct the location of the defect.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了消除在被测试的基板上投射带电粒子束的方法，并且检测发射的二次电子等以获得图像的问题，然后将获得的图像与通过移动到图案缺陷的位置来检查用于图案缺陷的基板的参考图像或缺陷，通过照射带电粒子束对待测试的基板进行充电，使带电粒子束弯曲，那么缺陷的位置偏差。解决方案：检查检查时的位置偏差量和与参考图像的位置偏差量，同时计算出在检查时纠正缺陷的位置。缺陷信息在检查时添加图像，然后对图像信息和布局信息之间的位置偏差量进行校正。缺陷信息在检查时与图像一起添加，然后与检查缺陷时的图像进行比较，以校正缺陷的位置。当检查缺陷时，获得图像，然后将其添加到缺陷信息中，并且在检查缺陷时的缺陷信息和与其他装置检测到的图像或布局信息相比较时，将缺陷信息与图像进行比较，以校正缺陷。

15. 发明专利

JP2002188999A DETECTOR AND METHOD FOR DETECTING FOREIGN MATTER AND DEFECT 失效
公开(公告)号：JP2002188999A
公开(公告)日：2002-07-05
申请号：JP2000388628
申请日：2000-12-21
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： OSHIMA YOSHIMASA , NOGUCHI MINORU , NISHIYAMA HIDETOSHI , HAMAMATSU REI , SUZUKI SHINICHI
IPC分类号： G01N21/956
摘要： PROBLEM TO BE SOLVED: To accurately and quickly discriminate and detect a defect such as a flaw and a foreign matter, in inspection for an inspection object such as a semiconductor wafer. SOLUTION: This detector is provided with a detecting means for detecting a reflection-scattered beam, from the inspection object, of a laser beam emitted toward the inspection object in plural directions, and for comparing detected results to detect directivity of the reflection-scattered beam.

16. 发明专利

JP2002033252A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002033252A
公开(公告)日：2002-01-31
申请号：JP2000218708
申请日：2000-07-14
申请人： HITACHI LTD
发明人： OKA KENJI , NISHIYAMA HIDETOSHI , MAEDA SHUNJI
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To properly perform quality control, based on the number or density of defects in a semiconductor manufacturing process by using a plurality of sets of inspection equipment which have different inspection sensitivity. SOLUTION: The quality control is conducted properly, correcting the difference in inspection sensitivity for each equipment by finding in advance a relative correction factor at each equipment and correcting the inspected results of the product from each equipment for the number or density of defects, by using the correction factor.

17. 发明专利

JPH1031955A MANUFACTURE OF THERMAL DIFFUSION SUPPLY TYPE ELECTRON SOURCE, AND ELECTRON BEAM APPLIED DEVICE USING THE ELECTRON SOURCE 失效
公开(公告)号：JPH1031955A
公开(公告)日：1998-02-03
申请号：JP18720896
申请日：1996-07-17
申请人： HITACHI LTD
发明人： NISHIYAMA HIDETOSHI , SHINADA HIROYUKI , OSHIMA TAKU , KURODA KATSUHIRO
IPC分类号： H01J9/02 , H01J37/073 , H01J37/147
摘要： PROBLEM TO BE SOLVED: To monochromate an emitted electron energy by using a thermal diffusion supply type electron source capable of being set at an operation temperature lower than that of an electron source Zr/O/W. SOLUTION: To the tip of a W-made heating element 1 formed in V-shape is spot-welded W monocrystal, and the tip is sharply tapered to form a needle electrode 2. It is then heated in vacuum, whereby the tip radius is set at 1.2μm. The resulting electrode is taken out to the atmosphere, a supply source 3 is adhered close to the base part of the needle electrode to manufacture a thermal diffusion supply type electron source 4. This electron source 4 is loaded on an energy analyzing device. A suppresser electrode 5 is put on the thermal diffusion supply type electron source 4, and an anode 6 is set in a position opposed thereto. The electron source 4 is electrically heated by a heating power source 8. The energy distribution of the emitted electron is measured by an energy analyzer 7. The electron emitting passage of this device is evacuated, the heating element 1 is heated to provide the emitted electron, and the emitted electron is put in the energy analyzer 7 for measurement.

18. 发明专利

JPH09161660A ELECTRON BEAM SOURCE AND ELECTRON BEAM DEVICE 失效
公开(公告)号：JPH09161660A
公开(公告)日：1997-06-20
申请号：JP31774295
申请日：1995-12-06
申请人： HITACHI LTD
发明人： OSHIMA TAKU , SHINADA HIROYUKI , NISHIYAMA HIDETOSHI , SUZUKI MUTSUZOU , KURODA KATSUHIRO
IPC分类号： H01J37/073 , H01J1/30 , H01J1/304
摘要： PROBLEM TO BE SOLVED: To obtain an excellent monochonic electron beam so as to improve the resolution of an electron microscope by providing a (p) type semi-conductor and a (n) type semi-conductor between the base material and the surface near the electron emitting surface of a negative electrode. SOLUTION: An undope GaAs film 11 at 5nm or less is formed in the tip of a base material 10 of a (p)+ type GaAs monocrystal needle, and the undope GaAs surface layer 13 is grown on a deposited Si atom layer 12, and heated in the vacuum so as to form a (n)+ area 17, and while a depletion area 16 is formed near the undope GaAs film 11 of the base material 10 between the (p) type area 15. When the predetermined negative voltage is applied to an electrode 14, voltage difference Vr is generated between the (n) type area 17 and the (p) type area 15, and the electron of the (p) type area 15 passes through a forbidden band of the depletion area 16 by the tunnel effect, and enters a conductive band of the (n) type area 17, and transmitted through a vacuum level 18, and emits the electron beam. At this stage, since the (n)+ area is formed thin at 5nm or less, a quantum level, which is surrounded by the energy barrier of the vacuum level 18 and the depletion area 16, is formed, and a large quantity of the electron having the sharp energy dependency, which is transmitted through this quantum level without scattering, is emitted by the resonance tunnel effect.

19. 发明专利

JPH09120788A ELECTRON SOURCE OF DIFFUSED SUPPLY TYPE 失效
公开(公告)号：JPH09120788A
公开(公告)日：1997-05-06
申请号：JP28015095
申请日：1995-10-27
申请人： HITACHI LTD
发明人： NISHIYAMA HIDETOSHI , SHINADA HIROYUKI , KURODA KATSUHIRO
IPC分类号： H01J37/06 , H01J37/073
摘要： PROBLEM TO BE SOLVED: To provide an electron source of diffused supply type which has a high current density. SOLUTION: An electron source concerned is composed of an electron emitting element 2 made of metal whose tip is needle shaped, a heat emitting body 1 to heat the electron emitting element, and a supply source attached to the root of the electron emitting element. Examples of the material to the supply source 3 are cesium oxide, cesium hydroxide, cesium fluoride or its water salt, or a mixture of two or more of the mentioned substances. The supply source substance is diffused to the tip of the electron emitting element by heating the heat emitting body, and an adsorption layer in which cesium co-exists with oxygen and/or fluorine is formed at the tip of the electron emitting element, and thus electron emission with high current density is achieved.

20. 发明专利

JPH08250569A PROCESSOR, SYSTEM THEREOF AND PRODUCT STORING APPARATUS 失效
公开(公告)号：JPH08250569A
公开(公告)日：1996-09-27
申请号：JP5429195
申请日：1995-03-14
申请人： HITACHI LTD
发明人： NOGUCHI MINORU , KENBO YUKIO , MORIOKA HIROSHI , NISHIYAMA HIDETOSHI , DOI HIDEAKI , SHIBA MASATAKA , SHIGYO YOSHIHARU , MATSUOKA KAZUHIKO , WATANABE KENJI , OSHIMA YOSHIMASA , ENDO FUMIAKI , TANIGUCHI YUZO
IPC分类号： H01L21/66 , G01N21/88 , G01N21/93 , G01N21/94 , G01N21/956 , H01L21/02
摘要： PURPOSE: To provide a processor, the system thereof and a product storing apparatus, by which the occurrences of abnormal attached foreign matters on a semiconductor substrate such as a semiconductor wafer and a TFT substrate are decreased and the substrates can be produced at a high yield rate. CONSTITUTION: Foreign matters attached on a work 4, which is conveyed by a handling mechanism 5 in a conveying chamber 104 in a processing device, are detected directly or through a transparent window provided in the upper lid of the conveying chamber. Or the foreign matters attached on the work 4 conveyed by the handling mechanism 5 in a preliminary chamber are detected. A lighting optical system casts the light on the surface of the work 4 in the slant direction. A detecting optical system condenses the scattered light from the foreign matters on the illuminated work, receives the light with a photoelectric conversion means and detects the foreign matter. A detecting head 1a is constituted of a plurality of the sets of the lighting optical systems and the detecting optical systems. A processing means processes the signals detected by the photoelectric conversion means of the detecting head and extracts the signals from the foreign matters. The foreign-matter detecting device having the detecting head 1a and the processing means is provided.

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