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1. 发明专利

DE10041354A1 Foreign particle or defect checking system for inspection of substrate or wafer, has size information processing device which processes size of foreign particle or defect on predetermined object 未知
公开(公告)号：DE10041354A1
公开(公告)日：2001-04-12
申请号：DE10041354
申请日：2000-08-23
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： NISHIYAMA HIDETOSHI , NOGUCHI MINORI , OHSHIMA YOSHIMASA , SAIKI KEIICHI , WATANABE KENJI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , INOUE YUKO
IPC分类号： H01L21/66 , G01N21/898
摘要： A signal processing circuit (105) performs the processing of the predetermined size of the foreign particle or defect information the registered signal in an defect detector. An output device performs the output of the size information of the foreign particle or defect from the defect detector and the output signal of the signal processing circuit. An illumination device (101) radiates light to a predetermined object to be checked. A light inspection device (104) determines the reflected light from the illuminated object, or the radiated light scattered by the illumination device. An defect detector registers a foreign particle or an defect on the object by synchronous processing of the detection signal. An independent claim is also included for a foreign particle or defect registering method.

2. 发明专利

DE69635119D1 未知
公开(公告)号：DE69635119D1
公开(公告)日：2005-10-06
申请号：DE69635119
申请日：1996-03-01
申请人： HITACHI LTD
发明人： NISHIYAMA HIDETOSHI , OKAMOTO MASAKUNI , SHINADA HIROYUKI , KURODA KATSUHIRO
IPC分类号： H01J1/304 , H01J37/06 , H01J37/073 , H01J1/14 , H01J9/02

3. 发明专利

JP2006330007A Defect inspection device and its method 有权
标题翻译：缺陷检查装置及其方法
公开(公告)号：JP2006330007A
公开(公告)日：2006-12-07
申请号：JP2006238838
申请日：2006-09-04
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , MATSUMOTO SHUNICHI , KENBO YUKIO , MATSUNAGA RYOJI , SAKAI SHIGETOSHI , NINOMIYA TAKANORI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , MORISHIGE YOSHIO , CHIKAMATSU SHUICHI
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a defect inspection device and its method capable of improving detection sensitivity and throughput by setting a threshold value corresponding to the dispersion of signal depending on a pattern by realizing highly effective illumination on a straight line from a direction where no diffracted light enters at the time of detecting the defect such as foreign matter etc., generated in the manufacturing process of an object while forming a pattern on the substrate. SOLUTION: By a highly effective illumination system illuminating from the direction of reducing the diffraction light from the pattern, the dispersed light from the pattern being the cause of the dispersion of the signal is reduced. Further, the threshold value is reduced by a threshold setting means from the calculated dispersion of signal for every region in the chip. Consequently, the detection threshold value is reduced and the detection sensitivity is improved and the improvement of the throughput is realized. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决问题：提供一种缺陷检查装置及其方法，该缺陷检查装置及其方法能够通过根据图案设置与信号的色散相对应的阈值，从而通过在直线上实现高效照明来提高检测灵敏度和吞吐量在检测在物体的制造过程中产生的缺陷（例如异物等）的同时在衍射光线入射的方向，同时在基板上形成图案。解决方案：通过从减少来自图案的衍射光的方向照明的高效照明系统，来自图案的分散光是信号分散的原因。此外，根据芯片中每个区域的计算的信号色散，阈值设置装置减小阈值。因此，检测阈值降低，检测灵敏度提高，吞吐量提高。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2005354085A Inspection method and inspection device by means of electrically-charged particle beam 有权
标题翻译：通过电荷粒子束检测方法和检查装置
公开(公告)号：JP2005354085A
公开(公告)日：2005-12-22
申请号：JP2005176063
申请日：2005-06-16
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NISHIYAMA HIDETOSHI , NOZOE MARI , SHINADA HIROYUKI
IPC分类号： G01N23/225 , G01R31/302 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device and an inspection method, capable of starting from a potential contrast image acquired at the time of the irradiation of electrically-charged particle beam onto the front surface of a substrate, calculating the values of the electrical resistance and the electrical capacity of an irradiation area and obtaining the distribution and the tendency of the electrical resistance and the electrical capacity of the entire surface of the substrate for a short time. SOLUTION: Secondary electrons and a back scattered electrons generated by the irradiation of electrically-charged particle beam 19 onto an inspected substrate 9, such as semiconductor wafer are incorporated into a detector 20. A signal proportional to the number of the incorporated electrons is generated. An inspection image is formed based on the signal. Electrical resistance and electrical capacity are determined such that an image is according to the inspection image in consideration of the current value and the irradiation energy of electrically-charged particle beam, an electric field on the front surface of the inspected substrate, and the emission efficiency and the like of the secondary electrons and the back-scattered electrons. Inspection is carried out and a defect is detected by acquiring the potential contrast image, in a state where a difference between the electric resistance values of a normal portion and a defective portion is increased fully using electrostatic charge caused by electron beam irradiation. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种检查装置和检查方法，能够从将带电粒子束照射时获取的潜在对比度图像开始到基板的前表面上，计算值的电阻和照射区域的电容，并且在短时间内获得基板的整个表面的电阻和电容的分布和趋势。解决方案：通过将带电粒子束19照射到检查的基板9（例如半导体晶片）上产生的二次电子和背散射的电子被并入检测器20中。与所结合的电子数目成比例的信号被生成。基于该信号形成检查图像。确定电阻和电容量，使得考虑到带电粒子束的当前值和照射能量，被检查基板的前表面上的电场和发射效率，图像根据检查图像等等的二次电子和后向散射的电子。在使用由电子束照射引起的静电电荷使普通部分和缺陷部分的电阻值之间的差异完全增加的状态下，通过获取潜在对比度图像来检测并检测缺陷。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005091182A Pattern defect inspection apparatus and pattern defect inspection method 有权
标题翻译：图案缺陷检查装置和图案缺陷检查方法
公开(公告)号：JP2005091182A
公开(公告)日：2005-04-07
申请号：JP2003325526
申请日：2003-09-18
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： YOSHIDA MINORU , MAEDA SHUNJI , NISHIYAMA HIDETOSHI
IPC分类号： G01B11/30 , G01N21/47 , G01N21/95 , G01N21/956 , G06T1/00 , H01L21/027 , H01L21/66
CPC分类号： G01N21/9501 , G01N21/4788 , G01N21/956
摘要： PROBLEM TO BE SOLVED: To provide a defect inspection apparatus for detecting finer defects with high sensitivity by varying illumination conditions for irradiating a sample with light arbitrarily and easily, and further by changing the transmittance of a pupil filter at a detection side and by changing phase conditions.
SOLUTION: The defect inspection apparatus of a pattern to be inspected comprises an illumination light source 4; a rotary diffusion plate 29 for reducing the coherence of illumination light that is emitted after an illumination range is formed by adjusting the quantity of light from the illumination light source 4; rocking mirrors 14, 19, or the like for imaging by irradiating a wafer 1 with luminous flux in which the coherence is reduced by varying the shape of the luminous flux on a pupil; an image sensor 35 for detecting an image signal by imaging the image of a wafer 1 formed by the imaging of reflection light from the wafer 1; an observation camera 32 for observing the detected detection image; and an image processing unit 37 for detecting the defect of the pattern formed on the wafer 1, based on information regarding the detected detection image signal.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种用于通过改变用于用光照射样品的任意和容易的光照条件来检测更高的灵敏度的缺陷检查装置，并且还通过改变检测侧的瞳孔滤光片的透射率，以及通过改变相位条件。检查图案的缺陷检查装置包括照明光源4，旋转漫射板29，用于通过调节来自照明光源4的光量来减少在照明范围形成后发出的照明光的相干性; 摆动反射镜14,19等，用于通过对光瞳1的光束的形状进行变化来照射具有相干性降低的光束的晶片1成像; 图像传感器35，用于通过对来自晶片1的反射光的成像形成的晶片1的图像进行成像来检测图像信号; 观察摄像机32，用于观察检测出的检测图像; 以及图像处理单元37，用于基于关于检测到的检测图像信号的信息来检测形成在晶片1上的图案的缺陷。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004301847A Defects inspection apparatus and method 有权
公开(公告)号：JP2004301847A
公开(公告)日：2004-10-28
申请号：JP2004146031
申请日：2004-05-17
申请人： Hitachi High-Tech Electronics Engineering Co Ltd , Hitachi Ltd , 日立ハイテク電子エンジニアリング株式会社 , 株式会社日立製作所
发明人： NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , MATSUMOTO SHUNICHI , KENBO YUKIO , MATSUNAGA RYOJI , SAKAI SHIGETOSHI , NINOMIYA TAKANORI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , MORISHIGE YOSHIO , CHIKAMATSU SHUICHI
IPC分类号： G01B11/30 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a defects inspection apparatus and a method with an improved detection sensitivity and throughput by realizing a high-efficiency illumination on a straight line from a direction into which diffracted light is not introduced to reduce the diffracted light from a pattern and setting a threshold according to fluctuations in signal by pattern, when detecting defects such as foreign substances which appear in a fabrication process fabricating an object by forming the pattern on a substrate. SOLUTION: Scattered light from the pattern leading to fluctuations in signal is reduced by a high-efficiency illumination optical system which allows illumination from a direction which reduces diffracted light from the pattern. A detection threshold is reduced by a means which sets the threshold based on fluctuations in signal calculated for each region in a chip. An improvement in detection sensitivity and throughput is thereby realized. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2002057195A METHOD FOR PREPARING DATA FOR DEFECT ANALYSIS IN EXAMINATION OF ELECTRONIC DEVICE AND SYSTEM FOR ANALYZING EXAMINATION DATA FOR ELECTRONIC DEVICE 失效
公开(公告)号：JP2002057195A
公开(公告)日：2002-02-22
申请号：JP2000246391
申请日：2000-08-15
申请人： HITACHI LTD
发明人： ONO MAKOTO , NISHIYAMA HIDETOSHI , IWATA HISAFUMI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To narrow down a defect factor caused by the defect of an electronic device for forming the circuit patterns of multiple layers by analyzing the defect to occur in each of layers of the electronic device. SOLUTION: On the basis of the result of a defect examination to be performed each time the layer of a wafer is formed, processing 41 is performed for making correspondent defect coordinates between respective examinations to recognize the defect and further, processing 43 is performed for deciding the size of that defect for each recognized defect to unify the defect sizes different for each examination of the defect. Next, processing 45 is performed for excluding fine defects to narrow down defect data as a target of defect analysis.

8. 发明专利

JP2000311926A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000311926A
公开(公告)日：2000-11-07
申请号：JP2000070991
申请日：2000-03-09
申请人： HITACHI LTD
发明人： NOGUCHI MINORU , MORIOKA HIROSHI , NISHIYAMA HIDETOSHI , KENBO YUKIO , OSHIMA YOSHIMASA , MATSUOKA KAZUHIKO , SHIGYO YOSHIHARU
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To obtain a high-efficiency substrate manufacturing line by issuing an alarm when an abnormality due to generation of a foreign body is detected on a substrate by monitoring. SOLUTION: An oblique illumination system which is composed of an illumination array is provided. An image-formation optical system which is constituted of a lens array or a microlens group is provided. A spatial filter which is arranged on the Fourier transform face of the image-formation optical system is provided. A detector which is arranged in the image-formation position of the image-formation optical system is provided. In addition, a foreign-body monitoring device which detects the generated state of a foreign body on a semiconductor substrate is installed at the entrance or the exit of a treatment device or at a conveyance system between a plurality of treatment devices. Consequently, the generated state of a defect due to the foreign body on the substrate can be detected by the treatment device in a substrate manufacturing process. When the generated state of the defect due to the foreign body is processed so as to sort a generation mode, the cause for generation of the defect due to the foreign body can be investigated by analyzing the component of the generated defect due to the foreign body.

9. 发明专利

JPH11204592A MANUFACTURE OF SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE MANUFACTURED THEREBY 失效
公开(公告)号：JPH11204592A
公开(公告)日：1999-07-30
申请号：JP364198
申请日：1998-01-12
申请人： HITACHI LTD
发明人： FUKUDA KENICHIRO , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , NOGUCHI MINORU
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To automatically and accurately detect a process, in which a large number of foreign substances resulting in defective probe inspection and a large number of the defectives of appearance faults are generated, at an early stage by obtaining and displaying the rate of capture of foreign substances of an inspection device during current monitoring to another inspection device. SOLUTION: The converted data of an inspection device A1, an inspection apparatus B2 and an inspection apparatus C3 and the inspection data of an inspection apparatus during current monitor are compared by a comparison calculation processing section 47. Consequently, the rate of capture of the inspection apparatus during the current monitor to another inspection apparatus (the number of defectives detected by the inspection device during monitor at present/the number of defectives detected by another inspection device) can be calculated. The rate of capture and the inspection data of another inspection device are displayed simultaneously, on a data display section 5 together with the inspection data of the inspection device during the current monitor. As a result, since the overall inclination of the rate of capture can comprehended, a change with time of the inspection performance of the inspection device during monitor can be determined. Accordingly, the calibration of the performance of the inspection device during monitor becomes accurate.

10. 发明专利

JPH1130590A FOREIGN MATTER AND DEFECT INSPECTING DEVICE, AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH1130590A
公开(公告)日：1999-02-02
申请号：JP18477697
申请日：1997-07-10
申请人： HITACHI LTD
发明人： NISHIYAMA HIDETOSHI , NOGUCHI MINORU , SHISHIDO HIROAKI , KENBO YUKIO
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , G03F1/72 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To detect a foreign matter and a defect on a pattern, which is different in the quantity of scattered light with high sensitivity, by providing an adjusting means for the quantity of detection light of a photodetector corresponding to an inspection area of a body to be inspected. SOLUTION: The body to be inspected is irradiated by a lighting means 201 and the scattered light from the body to be inspected is imaged on a detection light quantity adjusting means 204 by an imaging optical system 203. At this time, the scattered light intensity distribution is modulated according to the scattered light intensity from the body to be inspected by using a nonlinear element, etc. This modulated light is re-imaged on the photodetecting means 206 by the imaging optical system 205 and a signal processing circuit 207 detects a foreign body and a defect.

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