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    • 12. 发明申请
    • BODY-BIASED ENHANCED PRECISION CURRENT MIRROR
    • 身体偏心增强精度电流镜
    • US20060192611A1
    • 2006-08-31
    • US10906628
    • 2005-02-28
    • Anthony BonaccioHayden Cranford
    • Anthony BonaccioHayden Cranford
    • G05F1/10
    • G05F3/262
    • A body-biased enhanced current mirror reference circuit is disclosed wherein the body bias voltage of a current mirror device is varied to adjust its threshold voltage. Both the drain and body potentials of a replica mirror transistor are controlled to selected values. The drain is set to an expected DC voltage output of an NFET current mirror device. The body potential is set to a maximum desired value to prevent forward biasing of the body-to-diffusion junction(s) of one or more current mirror devices, which is accomplished by a feedback control circuit. A low-frequency, low-precision op amp drives the gate of a replica load device so that the body of the replica NFET current mirror device is set to a maximum bias voltage. The maximum bias voltage is also used to bias the body of a diode connected NMOS reference transistor, so that the current in the NFET current mirror device will be approximately equal to the current in the diode-connected NMOS reference. An auxiliary NFET current mirror device may be added to the body-biased enhanced current mirror circuit with the body connected to ground as in the unmodified current mirror to negate a non-monotonicity of the current output.
    • 公开了一种体偏置增强电流镜参考电路,其中电流镜装置的体偏置电压被改变以调节其阈值电压。 复制镜晶体管的漏极和体电位都被控制为选定值。 漏极设置为NFET电流镜器件的预期直流电压输出。 身体电位被设置为最大期望值,以防止由反馈控制电路实现的一个或多个电流镜装置的体对扩散结的正向偏置。 低频,低精度运算放大器驱动复制负载装置的栅极,使得复制NFET电流镜装置的主体被设置为最大偏置电压。 最大偏置电压也用于偏置二极管连接的NMOS参考晶体管的主体,使得NFET电流镜器件中的电流将近似等于连接二极管的NMOS参考电流。 辅助NFET电流镜装置可以被添加到主体偏置的增强电流镜电路中,其中主体连接到地面,如在未修改的电流镜中,以消除电流输出的非单调性。
    • 14. 发明申请
    • SELF-TEST CIRCUITRY TO DETERMINE MINIMUM OPERATING VOLTAGE
    • 自检电路确定最小工作电压
    • US20060259840A1
    • 2006-11-16
    • US10908452
    • 2005-05-12
    • Wagdi AbadeerGeorge BracerasAnthony BonaccioKevin Gorman
    • Wagdi AbadeerGeorge BracerasAnthony BonaccioKevin Gorman
    • G01R31/28
    • G01R31/3004
    • A solution for determining minimum operating voltages due to performance/power requirements would be valid for a wide range of actual uses. The solution includes a test flow methodology for dynamically reducing power consumption under applied conditions while maintaining application performance via a BIST circuit. There is additionally provided a test flow method for dynamically reducing power consumption to the lowest possible stand-by/very low power level under applied conditions that will still be sufficient to maintain data/state information. One possible application would be for controlling the voltage supply to a group of particular circuits on an ASIC (Application Specific Integrated Circuit). These circuits are grouped together in a voltage island where they would receive a voltage supply that can be different from the voltage supply other circuits on the same chip are receiving. The same solution could be applied to a portion of a microprocessor (the cache logic control, for example).
    • 用于确定由于性能/功率要求而导致的最小工作电压的解决方案对于广泛的实际应用是有效的。 该解决方案包括测试流程方法,用于在应用条件下动态降低功耗,同时通过BIST电路保持应用性能。 另外提供了一种测试流程方法,用于在仍然足以维护数据/状态信息的应用条件下将功耗动态地降低到最低可能待机/极低功率水平。 一种可能的应用是用于控制对ASIC(专用集成电路)上的一组特定电路的电压供应。 这些电路分组在一个电压岛中,在那里它们将接收可以与同一芯片正在接收的其它电路的电压供给不同的电压源。 相同的解决方案可以应用于微处理器的一部分(例如,高速缓存逻辑控制)。
    • 17. 发明申请
    • METHOD AND APPARATUS FOR STORING CIRCUIT CALIBRATION INFORMATION
    • 存储电路校准信息的方法和装置
    • US20070115019A1
    • 2007-05-24
    • US11164040
    • 2005-11-08
    • Anthony BonaccioAllen HaarJoseph IadanzaDouglas StoutIvan Wemple
    • Anthony BonaccioAllen HaarJoseph IadanzaDouglas StoutIvan Wemple
    • G01R31/26
    • G01R31/2884G01R35/005
    • A method for altering circuit characteristics to make them independent of processing parameters of devices within an integrated circuit is disclosed. A process parameter is measured by a kerf or on-chip built-in test on a selective set of chip on a wafer, and the results are stored on a storage device within each respective chip. Then, for each of the remaining chips, a two-dimensional interpolation is performed to determine the process parameter value for the respective chip based on the measured value. The interpolated values are recorded along with the coordinates of the chip in an efuse control file. Such information is subsequently stored into an efuse module within the chip. On-chip digital control structures are used to adjust certain operational characteristics of a functional component within the chip based on the information stored in the efuse module.
    • 公开了一种用于改变电路特性以使它们与集成电路内的器件的处理参数无关的方法。 通过在晶片上的选择性芯片组上的切口或片上内置测试来测量工艺参数,并将结果存储在每个相应芯片内的存储装置上。 然后,对于剩余的每个芯片,执行二维内插,以基于测量值确定各个芯片的处理参数值。 内插值与芯片在efuse控制文件中的坐标一起被记录。 这样的信息随后被存储在芯片内的efuse模块中。 片上数字控制结构用于根据存储在efuse模块中的信息来调整芯片内的功能组件的某些操作特性。